6680
Abstract: FZ9935
Text: TO-252 Tape and Reel Data D-PAK TO-252 Packaging Configuration: Figure 1.0 Packaging Description: TO-252 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated
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O-252
O-252)
330cm
164mm
6680
FZ9935
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate MOSFETS CJU01N60 N-Channel Power MOSFET TO-252 General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading
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O-252
CJU01N60
O-252
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate MOSFETS CJU02N60 N-Channel Power MOSFET TO-252 General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading
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O-252
CJU02N60
O-252
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SA1242 TRANSISTOR PNP TO-252 FEATURES z Strobe Flash Applications Medium Power Amplifier Applications z Excellent hFE Linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A)
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O-252
2SA1242
O-252
-100uA,
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CHM25N15LPAGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 150 Volts CHM25N15LPAGP CURRENT 25 Ampere APPLICATION * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE * Small package. (TO-252)
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CHM25N15LPAGP
O-252)
250uA
CHM25N15LPAGP
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CHM05N65PAGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHM05N65PAGP N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 650 Volts CURRENT 4 Ampere APPLICATION * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE * Small flat package. D-PAK(TO-252)
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CHM05N65PAGP
O-252)
250uA
CHM05N65PAGP
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TRANSISTOR SMD CODE 15
Abstract: smd code transistor transistor smd npn ac smd transistor code 14 smd transistor 14 transistor smd w transistor smd wu SMD Transistor SA SMD TRANSISTOR 2SD669A
Text: SMD Power Transistor NPN 2SD669XD/2SD669AXD SMD Power Transistor (NPN) Features • Designed for general purpose power applications • Rugged and reliable • RoHS compliance D-PACK (TO-252) Mechanical Data Case: D-PACK(TO-252), Plastic Package Terminals:
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2SD669XD/2SD669AXD
O-252)
MIL-STD-202G,
2SD669XD
2SD669AXD
TRANSISTOR SMD CODE 15
smd code transistor
transistor smd npn ac
smd transistor code 14
smd transistor 14
transistor smd w
transistor smd wu
SMD Transistor SA
SMD TRANSISTOR
2SD669A
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100C
Abstract: No abstract text available
Text: SSD01L60 1A, 600V,RDS ON 12Ω N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente Description TO-252 The SSD01L60 (TO-252) is universally preferred for all commercial-industrial surface mount applications and suited for AC/DC converters. Features
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SSD01L60
O-252
O-252)
01-Jun-2002
100C
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3543
Abstract: No abstract text available
Text: MJD31C Low voltage NPN power transistor Datasheet − production data Features • ■ Surface-mounting TO-252 power package in tape and reel TAB Complementary to the PNP type MJD32C 3 Application ■ 1 General purpose linear and switching equipment DPAK TO-252
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MJD31C
O-252
MJD32C
O-252
MJD31C
MJD31CT4
3543
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d1 marking code dpak transistor
Abstract: MJD32CT4
Text: MJD32C Low voltage PNP power transistor Datasheet − production data Features • ■ Surface-mounting TO-252 power package in tape and reel TAB Complementary to the NPN type MJD31C 3 Application ■ 1 General purpose linear and switching equipment DPAK TO-252
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MJD32C
O-252
MJD31C
O-252
MJD32C
MJD32CT4
d1 marking code dpak transistor
MJD32CT4
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TD03B
Abstract: 80530 TO-252 TO252 MS101189
Text: Transistor Outline TO-252 3 Lead Molded TO-252 NS Package Number TD03B LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein:
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O-252)
O-252
TD03B
MS101189
TD03B
80530
TO-252
TO252
MS101189
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JESD97
Abstract: MJD31C MJD31CT4
Text: MJD31CT4 Low voltage NPN power transistor General features • Surface-mounting TO-252 power package in tape & reel ■ In compliance with the 2002/93/EC European Directive 3 Applications ■ 1 General purpose switching and amplifier transistor DPAK TO-252
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MJD31CT4
O-252
2002/93/EC
O-252
MJD31C
JESD97
MJD31C
MJD31CT4
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JESD97
Abstract: MJD31C MJD32C MJD32CT4
Text: MJD32C Low voltage PNP power transistor Features • NPN type is MJD31C ■ Surface-mounting TO-252 power package in tape & reel Applications ■ 3 1 General purpose switching and amplifier Description DPAK TO-252 The device is manufactured in Planar technology
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MJD32C
MJD31C
O-252
O-252
MJD32CT4
JESD97
MJD31C
MJD32C
MJD32CT4
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2SA1242
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/252 Plastic-Encapsulate Transistors 2SA1242 TRANSISTOR PNP TO-251 TO-252-2L FEATURES z Strobe Flash Applications Medium Power Amplifier Applications z Excellent hFE linearity 123 1 123 1. BASE : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A)
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O-251/252
2SA1242
O-251
O-252-2L
-100uA,
2SA1242
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13473
Abstract: MJD31C MJD31CT4-A MJD32C
Text: MJD31CT4-A Low voltage NPN power transistor Features • This device is qualified for automotive application TAB ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the PNP type MJD32C 3 1 Application ■ DPAK TO-252 General purpose linear and switching
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MJD31CT4-A
O-252
MJD32C
O-252
MJD31C
13473
MJD31C
MJD31CT4-A
MJD32C
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MJD32C
Abstract: Date Code Marking STMicroelectronics PACKAGE DPAK MJD31C MJD32CT4 MJD32C st
Text: MJD32C Low voltage PNP power transistor Features • ■ Surface-mounting TO-252 power package in tape and reel TAB Complementary to the NPN type MJD31C 3 Application ■ 1 General purpose linear and switching equipment DPAK TO-252 Description The device is manufactured in planar technology
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MJD32C
O-252
MJD31C
O-252
MJD32CT4
MJD32C
Date Code Marking STMicroelectronics PACKAGE DPAK
MJD31C
MJD32CT4
MJD32C st
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MJD31C
Abstract: MJD32C MJD32CT4
Text: MJD32C Low voltage PNP power transistor Features • ■ Surface-mounting TO-252 power package in tape and reel TAB Complementary to the NPN type MJD31C 3 Application ■ 1 General purpose linear and switching equipment DPAK TO-252 Description The device is manufactured in planar technology
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MJD32C
O-252
MJD31C
O-252
MJD32CT4
MJD31C
MJD32C
MJD32CT4
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MJD31C
Abstract: MJD32C MJD32CT4-A
Text: MJD32CT4-A Low voltage PNP power transistor Features • This device is qualified for automotive application TAB ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the NPN type MJD31C 3 1 Application ■ DPAK TO-252 General purpose linear and switching
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MJD32CT4-A
O-252
MJD31C
O-252
MJD32C
MJD31C
MJD32C
MJD32CT4-A
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Untitled
Abstract: No abstract text available
Text: SSD484 25A, 30V,RDS ON 15mΩ N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente RoHS Compliant Product Description TO-252 The SSD484 uses advanced trench technology to provide excellent on-resistance and low gate charge. The TO-252 package is universally preferred for all commercial-industrial
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SSD484
O-252
SSD484
O-252
01-Jun-2002
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SSD408
Abstract: mosfet 30V 18A TO 252
Text: SSD408 18A, 30V,RDS ON 18mΩ N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente RoHS Compliant Product Description TO-252 The SSD408 uses advanced trench technology to provide excellent on-resistance and low gate charge. The TO-252 package is universally preferred for all commercial-industrial
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SSD408
O-252
SSD408
O-252
01-Jun-2002
mosfet 30V 18A TO 252
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Date Code Marking STMicroelectronics PACKAGE DPAK
Abstract: MJD31C MJD31CT4 MJD32C
Text: MJD31C Low voltage NPN power transistor Features • ■ Surface-mounting TO-252 power package in tape and reel TAB Complementary to the PNP type MJD32C 3 Application ■ 1 General purpose linear and switching equipment DPAK TO-252 Description The device is manufactured in planar technology
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MJD31C
O-252
MJD32C
O-252
MJD31CT4
Date Code Marking STMicroelectronics PACKAGE DPAK
MJD31C
MJD31CT4
MJD32C
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MJD31C
Abstract: MJD31CT4-A MJD32C Date Code Marking STMicroelectronics PACKAGE DPAK
Text: MJD31CT4-A Low voltage NPN power transistor Features • This device is qualified for automotive application TAB ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the PNP type MJD32C 3 1 Application ■ DPAK TO-252 General purpose linear and switching
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MJD31CT4-A
O-252
MJD32C
O-252
MJD31C
MJD31C
MJD31CT4-A
MJD32C
Date Code Marking STMicroelectronics PACKAGE DPAK
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MJD31C
Abstract: MJD31CT4 MJD32C
Text: MJD31C Low voltage NPN power transistor Features • ■ Surface-mounting TO-252 power package in tape and reel TAB Complementary to the PNP type MJD32C 3 Application ■ 1 General purpose linear and switching equipment DPAK TO-252 Description The device is manufactured in planar technology
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MJD31C
O-252
MJD32C
O-252
MJD31CT4
MJD31C
MJD31CT4
MJD32C
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MJD31C
Abstract: MJD32C MJD32CT4-A
Text: MJD32CT4-A Low voltage PNP power transistor Features • This device is qualified for automotive application TAB ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the NPN type MJD31C 3 1 Application ■ DPAK TO-252 General purpose linear and switching
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MJD32CT4-A
O-252
MJD31C
O-252
MJD32C
MJD31C
MJD32C
MJD32CT4-A
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