FDD6672A
Abstract: 6680 MOSFET d-pak DEVICE MARKING CODE table CBVK741B019 F63TNR FDD6680
Text: FDD6672A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDD6672A
O-252
FDD6672A
6680 MOSFET
d-pak DEVICE MARKING CODE table
CBVK741B019
F63TNR
FDD6680
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CBVK741B019
Abstract: F63TNR FDD2570 FDD6680
Text: FDD2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 4.7 A, 150 V. RDS ON = 80 mΩ @ VGS = 10 V
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FDD2570
CBVK741B019
F63TNR
FDD2570
FDD6680
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CBVK741B019
Abstract: F63TNR FDD6680 FDD6690A
Text: FDD6690A N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior
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FDD6690A
O-252
CBVK741B019
F63TNR
FDD6680
FDD6690A
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CBVK741B019
Abstract: F63TNR FDD5612 FDD6680
Text: FDD5612 60V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features • 18 A, 60 V.
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FDD5612
O-252
CBVK741B019
F63TNR
FDD5612
FDD6680
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TO-252 N-channel power MOSFET
Abstract: No abstract text available
Text: FDD2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 3.6 A, 200 V. RDS ON = 130 mΩ @ VGS = 10 V
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FDD2670
TO-252 N-channel power MOSFET
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Untitled
Abstract: No abstract text available
Text: FDD6035AL N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior
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FDD6035AL
FDD6690A
FDD6035AL
O-252
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FDD6512A
Abstract: FDU6512A
Text: FDD6512A/FDU6512A 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDD6512A/FDU6512A
O-251AA)
O-252
O-252)
FDD6512A
FDU6512A
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Mosfet FDD
Abstract: ON 534 TO252 fdd 690
Text: FDD6644/FDU6644 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDD6644/FDU6644
O-251AA)
O-252
O-252)
O-252
30TYP
Mosfet FDD
ON 534 TO252
fdd 690
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Untitled
Abstract: No abstract text available
Text: IRFR9024* P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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IRFR9024
IRFR9024*
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6680
Abstract: FZ9935
Text: TO-252 Tape and Reel Data D-PAK TO-252 Packaging Configuration: Figure 1.0 Packaging Description: TO-252 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated
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O-252
O-252)
330cm
164mm
6680
FZ9935
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d-pak DEVICE MARKING CODE table
Abstract: CBVK741B019 F63TNR FDD3680 FDD6680 C4692
Text: FDD3680 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 25 A, 100 V.
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FDD3680
d-pak DEVICE MARKING CODE table
CBVK741B019
F63TNR
FDD3680
FDD6680
C4692
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6680 equivalent ic no
Abstract: FDS6680S CBVK741B019 F63TNR FDD6680 FDD6680A FDD6680S FDS6680
Text: FDD6680S 30V N-Channel PowerTrench SyncFET General Description Features The FDD6680S is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDD6680S
FDD6680S
FDD6680A
6680 equivalent ic no
FDS6680S
CBVK741B019
F63TNR
FDD6680
FDS6680
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6680 MOSFET
Abstract: CBVK741B019 F63TNR FDD6680 40V 14A TO-252 14A, 50V, Logic Level, N-Channel TO-252 Mosfet FDD
Text: FDD6680 N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features This N-Channel Logic level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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FDD6680
6680 MOSFET
CBVK741B019
F63TNR
FDD6680
40V 14A TO-252
14A, 50V, Logic Level, N-Channel TO-252
Mosfet FDD
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FDD6680
Abstract: CBVK741B019 F63TNR FDD5670 FDD marking
Text: FDD5670 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • • Low gate charge.
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FDD5670
FDD6680
CBVK741B019
F63TNR
FDD5670
FDD marking
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DSAS 13-0
Abstract: d92 02 a9hv
Text: IRFR9024 P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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IRFR9024
DSAS 13-0
d92 02
a9hv
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marking 6A STO 23
Abstract: CBVK741B019 F63TNR FDD6630A FDD6680 6680 MOSFET
Text: FDD6630A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDD6630A
O-252
marking 6A STO 23
CBVK741B019
F63TNR
FDD6630A
FDD6680
6680 MOSFET
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a9hv
Abstract: No abstract text available
Text: MTD2955V P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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MTD2955V
a9hv
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d marking code dpak transistor
Abstract: d-pak DEVICE MARKING CODE table CBVK741B019 F63TNR FDD3580 FDD6680 FDU3580
Text: FDD3580/FDU3580 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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FDD3580/FDU3580
O-25opment.
d marking code dpak transistor
d-pak DEVICE MARKING CODE table
CBVK741B019
F63TNR
FDD3580
FDD6680
FDU3580
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Mosfet FDD
Abstract: 6680 MOSFET TO-252 fairchild CBVK741B019 F63TNR FDD5612 FDD6680 marking 300 to252 C1 MARKING TO-252
Text: FDD5612 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. 19 A, 60 V. RDS ON = 0.055 Ω @ VGS = 10 V
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FDD5612
Mosfet FDD
6680 MOSFET
TO-252 fairchild
CBVK741B019
F63TNR
FDD5612
FDD6680
marking 300 to252
C1 MARKING TO-252
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fdd 03 15 marking
Abstract: Multilayer metallized paper CBVK741B019 F63TNR FDD6680 FZ9935
Text: TO-252 DPAK Tape and Reel Data TO-252 (DPAK) Packaging Configuration: Figure 1.0 Packaging Description: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES Embossed ESD Marking N NTIO AT TE AUTIONS OBSE TO-252 parts are shipped in tape. The carrier tape is
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O-252
O-252
164mm
fdd 03 15 marking
Multilayer metallized paper
CBVK741B019
F63TNR
FDD6680
FZ9935
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CBVK741B019
Abstract: F63TNR FDD6680 FDD6680A
Text: FDD6680A N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior
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FDD6680A
O-252
CBVK741B019
F63TNR
FDD6680
FDD6680A
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6680 MOSFET
Abstract: CBVK741B019 F63TNR FDD3570 FDD6680
Text: FDD3570 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel Logic level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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FDD3570
O-252
6680 MOSFET
CBVK741B019
F63TNR
FDD3570
FDD6680
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CBVK741B019
Abstract: F63TNR FDD6670A FDD6670S FDD6680 schottky diode application
Text: FDD6670S 30V N-Channel PowerTrench SyncFET General Description Features The FDD6670S is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDD6670S
FDD6670S
FDD6670A
CBVK741B019
F63TNR
FDD6680
schottky diode application
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Untitled
Abstract: No abstract text available
Text: FDD6690S 30V N-Channel PowerTrench SyncFET General Description Features The FDD6690S is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDD6690S
FDD6690S
FDD6690A
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