Untitled
Abstract: No abstract text available
Text: I =¥= = = = ’= IBM11N16845BB IBM11N16845CB Preliminary 16M x 72 Super EOS Module Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 16Mx72 Extended Data Out Page Mode DIMMs • Performance: tcAc ! tftA t:;c i tnpc Provides Chip-Kill ECC protection transparently to
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IBM11N16845BB
IBM11N16845CB
16Mx72
104ns
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MPC271
Abstract: PC271 UPC271 IIPC271EO LM311 Vo-35 UPC311
Text: MPC271 / 311 P re c isio n V o lt a g e C o m p a r a t o r s FEATURES G E N E R A L D E S C R IP T IO N The pPC271/3t1 are voltage comparators that nav* • Operate from single 5 V supply tnpct currents more than a hundred times lower than • Maximum input current 250 nA
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uPC271
uPC311
pPC271/3t1
fiPC271
jiPC311
MPC271
PC271
IIPC271EO
LM311
Vo-35
UPC311
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TC5117445CSJ
Abstract: No abstract text available
Text: TO SHIBA_ TC5117445CSJ-40,-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORD BY 4-BIT EDO HYPER PAGE DYNAMIC RAM DESCRIPTION The TC5117445CSJ is an EDO (Hyper Page) dynamic RAM organized as 4,194,304 words by 4 bits. The
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TC5117445CSJ-40
304-WORD
TC5117445CSJ
28-pin
17445CSJ-40
TC5117445CSJ
SOJ28
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TC514265DJ
Abstract: TC514265D TC514265 SOJ40-P-400
Text: TOSHIBA TC514265DJ/DFT-50/60/70 PRELIMINARY 262,144 WORD X 16 BIT EDO HYPER PAGE DYNAMIC RAM Description TheTC514265DJ/DFT is an EDO (hyper page) dynamic RAM organized as 262,144 words by 16 bits. TheTC514265DJ/ DFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide oper
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TC514265DJ/DFT-50/60/70
TheTC514265DJ/DFT
TheTC514265DJ/
TC514265DJ/DFT
TC514265D
J/DFT-50/60/70
DR04041293
TC514265DJ
TC514265
SOJ40-P-400
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TC51V16405
Abstract: TC51V16405c
Text: INTEGRATED TOSHIBA " O S H I B A MOS DIGITAL I NT EGR AT ED CIRCUIT ” 51 V 16405 C5JS CST5 - SO TCS1V1c405 CSJ S/CSTS- 60 CIRCUIT TECHNICAL DATA SILICON GATE CMOS TENTATIVE DATA 4,194,304 W O RD x 4 BIT FAST PAGE DYNAM IC RAM DESCRIPTION The TC51V16405CSJS/CSTS is fast page dynamic RAM organized 4,194,304 words by 4 bits. The
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TCS1V1c405
TC51V16405CSJS/CSTS
300mil)
TCS1V16405
TC51V16405
SOJ26
TSOP26
TC51V16405c
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC5164 5 805AJ/AFT/AJS/AFTS-40,-50 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8,388,6O8-WORD X8-BIT EDO (HYPER PAGE) DYNAMIC RAM DESCRIPTION The TC5164(5)805AJ/AFT/AJS/AFTS is an EDO (hyper page) dynamic RAM organized as 8,388,608
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TC5164
805AJ/AFT/AJS/AFTS-40
805AJ/AFT/AJS/AFTS
32-pin
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v801
Abstract: tc5165165
Text: T O SH IB A THM72V8015ATG-4,-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM72V8015ATG is a 8,388,608-word by 72-bit dynamic RAM module consisting of nine TC5165805AFT DRAMs on a printed circuit board. This module is optimized for applications which
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THM72V8015ATG-4
72-BIT
THM72V8015ATG
608-word
TC5165805AFT
v801
tc5165165
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Untitled
Abstract: No abstract text available
Text: THM73V8015ATG-4,-5 T O SH IB A TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM73V8015ATG is a 8,388,608-word by 72-bit dynamic RAM module consisting of nine TC5165805AFT DRAMs on a printed circuit board. This module is optimized for applications which
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72-BIT
THM73V8015ATG-4
THM73V8015ATG
608-word
TC5165805AFT
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tc516
Abstract: No abstract text available
Text: THM73V1615ATG-4,-5 T O SH IB A TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM73V1615ATG is a 16,777,216-word by 72-bit dynamic RAM module consisting of 18 TC5165405AFT DRAMs on a printed circuit board. This module is optimized for applications which
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THM73V1615ATG-4
216-WORD
72-BIT
THM73V1615ATG
TC5165405AFT
tc516
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MSM51V17805
Abstract: MSM51V17805DSL
Text: E2G0129-17-61 O K I Semiconductor MSM51V17805D/DSL 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION TheMSM51V17805D/DSL is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V17805D/DSL achieves high integration, high-speed operation,
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E2G0129-17-61
MSM51V17805D/DSL
152-Word
MSM51VI7805D
MSM51V17805D/DSL
28-pin
MSM51V17805DSL
MSM51V17805
MSM51V17805DSL
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MSM5118165B
Abstract: TSOP 86 Package
Text: O K I Semiconductor MSM5118165B_ E2G 0055-17-41 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION TheMSM5118165B is a 1,048,576-word x 16-bit dynamic RAM fabricated inOki's silicon-gate CMOS technology. The MSM5118165B achieves high integration, high-speed operation, and low-power
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E2G0055-17-41
MSM5118165B_
576-Word
16-Bit
TheMSM5118165B
MSM5118165B
42-pin
TSOP 86 Package
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V1640
Abstract: MSM51V16405D MSM51V16405DSL
Text: E2G0124-17-61 O K I Semiconductor MSM5 1V1 6 4 0 5 P/PSL 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION TheMSM51 V16405D/DSL is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V16405D/DSL achieves high integration, high-speed operation,
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E2G0124-17-61
MSM51V16405P
MSM51V16405PSL
304-Word
TheMSM51
V16405D/DSL
MSM51V16405D/DSL
MSM51V16405D
/24-pin
V1640
MSM51V16405DSL
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THL64V4075ATG-4,-5,-4S,-5S TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 64-BIT DYNAMIC RAM MODULE DESCRIPTION The THL64V4075ATG is a 4,194,304-word by 64-bit dynamic RAM module consisting of four TC5165165AFT/AFTS DRAMs on a printed circuit board. This module is optimized for applications
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THL64V4075ATG-4
THL64V4075ATG
304-word
64-bit
TC5165165AFT/AFTS
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Untitled
Abstract: No abstract text available
Text: IBM11N32645B IBM11N32735B IBM11N32645C IBM11N32735C 32M x 64/72 DRAM MODULE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • System Performance Benefits: - Non buffered for increased performance - Reduced noise 35 VSs/V cc P^s
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IBM11N32645B
IBM11N32735B
IBM11N32645C
IBM11N32735C
32Mx64,
32Mx72
104ns
11N32645B
11N32735B
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Untitled
Abstract: No abstract text available
Text: IBM11M2645H 2M x 64 DRAM MODULE Features System Performance Benefits: • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 2Mx64 Extended Data Out Page Mode DIMM • Performance: -60 -70 -Buffered inputs except RAS, Data -Reduced noise (32 Vss/Vcc pins)
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IBM11M2645H
2Mx64
104ns
124ns
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Untitled
Abstract: No abstract text available
Text: IBM11N8845HB Preliminary 8M x 72 Super EOS Module Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 8Mx72 Extended Data Out Page Mode DIMMs • • Provides Chip-Kill ECC protection transparently to an existing Single Error Correction (SEC) system
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IBM11N8845HB
8Mx72
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Untitled
Abstract: No abstract text available
Text: IBM11M32735B IBM11M32735C 32M x 72 DRAM Module Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • System Performance Benefits: - Buffered inputs except RAS, Data - Reduced noise (32 VSs/V cc P^s) - 4 Byte Interleave enabled - Buffered PDs
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IBM11M32735B
IBM11M32735C
32Mx72
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Untitled
Abstract: No abstract text available
Text: IBM0164165B IBM0164165P 4M x 16 13/9 EDO DRAM Features • 4,194,304 word by 16 bit organization Dual CAS Byte Read/Write • Single 3.3 ± 0.3V power supply Performance: -50 • Extended Data Out Hyper Page Mode CAS before RAS Refresh - 4096 cycles/Retention Time
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IBM0164165B
IBM0164165P
104ns
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Untitled
Abstract: No abstract text available
Text: I = = = = ¥ = = = ’ = IB M 1 1 N 2 6 4 5 H IB M 1 1 N 2 7 3 5 H 2M x 64/72 DRAM MODULE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 2Mx64, 2Mx72 Extended Data Out Page Mode DIMMs applications • System Performance Benefits:
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2Mx64,
2Mx72
104ns
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MSM5117405
Abstract: MSM5117405B
Text: O K I Semiconductor MSM5 1 17405B_ E2G0039-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117405B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117405B achieves high integration, high-speed operation, and low-power
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E2G0039-17-41
MSM5117405B_
304-Word
MSM5117405B
26/24-pin
MSM5117405
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MD51V65165
Abstract: MD51V65165-50 MD51V65165-60
Text: E2G0146-18-11 O K I S em iconductor 3ver3ion: M ar 1998 MP51V65165_ 4,194,304-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MD51V65165 is a 4,194,304-word x 16-bit dynamic RAM fabricated in Oki's silicon-gate CMOS
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E2G0146-18-11
MD51V65165
304-Word
16-Bit
MD51V65165
50-pin
MD51V65165-50
MD51V65165-60
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374C
Abstract: No abstract text available
Text: - PRELIMINARY - November 1995 Edition 2.1 FUJITSU PRODUCT PROFILE SHEET M B814405C-60/-70 CMOS 1 M X 4 BIT HYPER PAGE MODE DRAM CMOS 1,048,576 x 4 bit Hyper Page Mode Dynamic RAM The Fujitsu MB814405C is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304
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B814405C-60/-70
MB814405C
024-bits
MB814405C-60
MB814405C-70
26-LEAD
FPT-26P-M01)
F26001S-3C-3
374C
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TH M 72V1615ATG-4,-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM72V1615ATG is a 16,777,216-word by 72-bit dynamic RAM module consisting of 18 TC5165405AFT DRAMs on a printed circuit board. This module is optimized for applications which
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72V1615ATG-4
216-WORD
72-BIT
THM72V1615ATG
TC5165405AFT
40-ns
50-ns
TC5165xx5AJ/AFT/AJS/AFTS
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Untitled
Abstract: No abstract text available
Text: PRE LIM IN AR Y- - May 1996 Edition 1.0 FUJITSU PRODUCT PROFILE SHEET MB8 1 V16405A-60/-70 CMOS 4M x 4 BIT HYPER PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 4 BIT Hyper Page Mode Dynamic RAM The Fujitsu MB81V16405A is a fully decoded CMOS Dynamic RAM DRAM that contains
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V16405A-60/-70
MB81V16405A
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