mPC2712
Abstract: mPC2712T PC2713T IC-2950 MPC271 mPC2713 C10535E VP15-00-3 mPC2713T C6650
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC2713T 1.2 GHz LOW NOISE WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • High power gain : 29 dB TYP. @ f = 0.5 GHz • Excellent frequency response : 1.2 GHz TYP. @ 3 dB down below the gain at 0.1 GHz
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PC2713T
PC2713T-E3
mPC2712
mPC2712T
PC2713T
IC-2950
MPC271
mPC2713
C10535E
VP15-00-3
mPC2713T
C6650
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IC-2951
Abstract: mpc2714t C10535E VP15-00-3 C6650 P1243
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µ PC2714T 1.8 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • Low power consumption : 15 mW VCC = 3.4 V, ICC = 4.5 mA TYP. • High power gain : 11.5 dB TYP. @ f = 0.5 GHz
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PC2714T
PC2714T-E3
IC-2951
mpc2714t
C10535E
VP15-00-3
C6650
P1243
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mPC339c
Abstract: UPC272C MPC277G UPC319G MPC393G upc272g UPC271ED 14 pin ic dip UPC311C UPC319C
Text: SELECTION GUIDE Operating D EV IC E O R IG IN A L Temperature Range Î/PC271C - 2 0 ~ +70 /UPC271ED - 2 0 ~ +80 MPC271G 311 PACKAGE - 2 0 ~ +70 8 Pin Molded DIP 8 Pin Cavity DIP Single High Speed Precision 8 Pin Molded Flat 0 ~ +70 8 Pin Molded DIP MPC311G
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uPC271C
uPC271ED
uPC271G
uPC311C
uPC311G
uPC272C
uPC272D
uPC272G
uPC319C
uPC319G
mPC339c
MPC277G
MPC393G
14 pin ic dip
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MPC271
Abstract: PC271 UPC271 IIPC271EO LM311 Vo-35 UPC311
Text: MPC271 / 311 P re c isio n V o lt a g e C o m p a r a t o r s FEATURES G E N E R A L D E S C R IP T IO N The pPC271/3t1 are voltage comparators that nav* • Operate from single 5 V supply tnpct currents more than a hundred times lower than • Maximum input current 250 nA
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uPC271
uPC311
pPC271/3t1
fiPC271
jiPC311
MPC271
PC271
IIPC271EO
LM311
Vo-35
UPC311
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uPC271
Abstract: MPC271 MPC311G PC271C
Text: MPCZ71 / 311 Precision Voltage Comparators GENERAL DESCRIPTION FEATURES The /iPC 271/311 are voltage com parators th a t has • Operates fro m single 5 V supply in p u t currents more than a hundred tim es low er than • M axim um in p u t current: 250 nA
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MPCZ71
uPC271
uPC311
juPC271
MPCZ71/311
MPC271
MPC311G
PC271C
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MPC2710
Abstract: poly silicon resistor TA-295 trasistor mpc2710b trasistor power H1L-STD-883 UPC2710B uPC2710 X1011
Text: CORP. N.A . E , D.D. WED 09.21’94 11:15/ST. 1 1 : 1 2 / NO. 3301512-173 P, GET- Q ualification Test Results o n S i MMI C ( u s e N E S A T 3 P r o c e s s ) ^ ¿ 2 7 /o r Prepared on : September 8,1994 Prepared by : Taizo Kato Engineer Assistant Manager
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15/ST.
19/ST,
20/ST,
21/ST.
MPC2710
poly silicon resistor
TA-295
trasistor
mpc2710b
trasistor power
H1L-STD-883
UPC2710B
uPC2710
X1011
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PC2710TB
Abstract: MPC2710 C1f TRANSISTOR P12152E
Text: PRELIMINARY DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT JU P C 2 7 1 0 T B 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The //PC2710TB is a silicon monolithic integrated circuits designed as PA driver for 900 MHz band cellular
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uPC2710TB
PC2710TB
PC2710T
/PC2710TB
PC2710T.
MPC2710
C1f TRANSISTOR
P12152E
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DM 0565
Abstract: sony 1S1656 MPC271 DM211 DM-211 2sa844
Text: SONY CORP/COMPONENT PRODS HTE 0302303 D 0003151 DM-211 SO N Y. Magnetoresistance Element Description 3 «S O N Y Package Outline Unit: mm The DM -211 is a highly sensitive magneto resistance element, composed of an evaporated ferromagnetic alloy on a sillicon substrate.
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DM-211
75mVp-p
40D31S3
MPC271
1S1656
2SA844
150J1
00031SM
DM 0565
sony
1S1656
DM211
DM-211
2sa844
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