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    TN20 Search Results

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    TN20 Price and Stock

    Diodes Incorporated ZXTN2007ZTA

    TRANS NPN 30V 6A SOT89-3
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    DigiKey ZXTN2007ZTA Reel 16,000 1,000
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    ZXTN2007ZTA Cut Tape 403 1
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    New Advantage Corporation ZXTN2007ZTA 96,000 1
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    Diotec Semiconductor AG MMFTN20

    MOSFET SOT23 N 50V 15OHM 150C
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    DigiKey MMFTN20 Reel 3,000 3,000
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    TME MMFTN20 80 10
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    Littelfuse Inc IXTN200N10L2

    MOSFET N-CH 100V 178A SOT227B
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    DigiKey IXTN200N10L2 Tube 1,215 1
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    Kyocera AVX Components 100B271JTN200XT1K

    CAP CER 270PF 200V P90 1111
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    DigiKey 100B271JTN200XT1K Reel 1,000 500
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    100B271JTN200XT1K Cut Tape 641 1
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    Kyocera AVX Components 100B221JTN200XT1K

    CAP CER 220PF 200V P90 1111
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    DigiKey 100B221JTN200XT1K Cut Tape 864 1
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    100B221JTN200XT1K Reel 500 500
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    TN20 Datasheets (58)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TN2010H-6FP STMicroelectronics Discrete Semiconductor Products - Thyristors - SCRs - HIGH TEMPERATURE 20A SCRS Original PDF
    TN2010H-6G STMicroelectronics SCR 600MV 20A D2PAK Original PDF
    TN2010H-6G-TR STMicroelectronics Discrete Semiconductor Products - Thyristors - SCRs - HIGH TEMPERATURE 20A SCRS Original PDF
    TN2010H-6T STMicroelectronics Discrete Semiconductor Products - Thyristors - SCRs - HIGH TEMPERATURE 20A SCRS Original PDF
    TN2010L Unknown Shortform Datasheet & Cross References Data Short Form PDF
    TN2010L Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    TN2010T Unknown Original PDF
    TN2010T-T1 Vishay Intertechnology N-Channel Enhancement-Mode MOSFET Transistor Original PDF
    TN2015H-6FP STMicroelectronics Discrete Semiconductor Products - Thyristors - SCRs - SCR 600V 20A TO-220FPAB Original PDF
    TN2015H-6T STMicroelectronics Discrete Semiconductor Products - Thyristors - SCRs - SCR 600V 20A TO-220 Original PDF
    TN2017 Continental Device India TO-237 Plastic Package Transistors Scan PDF
    TN2017 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    TN2017 Continental Device India NPN Transistor, TO-237 Scan PDF
    TN2017 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    TN2017 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    TN2017 National Semiconductor NPN Medium Power Transistors Scan PDF
    TN2017 National Semiconductor Transistors Scan PDF
    TN2017 National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF
    TN20-2G400JB Mitsubishi Thermistor NTC 40OHM 5% Original PDF
    TN20-2G400JB MMC Electronics America Thermistor: NTC: SMD Chip: 2300K Sensitivity Index Original PDF

    TN20 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TN2010T

    Abstract: No abstract text available
    Text: TN2010T N-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 200 11 0.8 to 3.0 0.12 Features Benefits Applications D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc.


    Original
    PDF TN2010T O-236 OT-23) S-52426--Rev. 14-Apr-97 TN2010T

    TN2010T

    Abstract: Marking Code For TN2010 R1 MARKING CODE
    Text: TN2010T N-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 200 11 0.8 to 3.0 0.12 Features Benefits Applications D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc.


    Original
    PDF TN2010T O-236 OT-23) 18-Jul-08 TN2010T Marking Code For TN2010 R1 MARKING CODE

    Untitled

    Abstract: No abstract text available
    Text: TN203 Porting a Program to Dynamic C Introduction Dynamic C has a number of improvements and differences compared to many other C compiler systems. This application note gives instructions and suggestions for porting a C program from other compilers to Dynamic C.


    Original
    PDF TN203

    Untitled

    Abstract: No abstract text available
    Text: TN2010T N-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 200 11 0.8 to 3.0 0.12 Features Benefits Applications D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc.


    Original
    PDF TN2010T O-236 OT-23) 08-Apr-05

    512-Point

    Abstract: No abstract text available
    Text: TN201 Fast Fourier Transforms on the Rabbit 2000 INTRODUCTION The Fourier transform is frequently used to analyze and modify real-world signals and waveforms. The Fourier transform is usually defined as ∞ X f = ∫ x ( t )e – j2πft dt . –∞ When the independent variable corresponds to time, the transform variable corresponds to frequency, in which case X(f) is called the spectrum of x(t). The original x(t) may be recovered from


    Original
    PDF TN201 512-Point

    3C85

    Abstract: 3E25 4C65 CBW308 PA11 tn2010 philips 3C85 ferrite ring cores
    Text: Philips Components Product specification Ferrite ring cores toroids TN20/10/7 RING CORES (TOROIDS) Effective core parameters SYMBOL PARAMETER VALUE UNIT Σ(I/A) core factor (C1) 1.30 mm−1 Ve effective volume 1465 mm3 Ie effective length 43.6 mm Ae effective area


    Original
    PDF TN20/10/7 TN20/10/7-3C11 TN20/10/7-3E25 TL20/10/7-3E5 TL20/10/7-3E6 3C85 3E25 4C65 CBW308 PA11 tn2010 philips 3C85 ferrite ring cores

    TN2010T

    Abstract: No abstract text available
    Text: TN2010T N-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 200 11 0.8 to 3.0 0.12 Features Benefits Applications D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc.


    Original
    PDF TN2010T O-236 OT-23) S-52426--Rev. 14-Apr-97 TN2010T

    TN2010T

    Abstract: No abstract text available
    Text: TN2010T N-Channel Enhancement-Mode MOS Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 200 11 0.8 to 3.0 0.085 Features Benefits Applications D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc.


    Original
    PDF TN2010T O-236 OT-23) P-38212--Rev. 15-Aug-94 TN2010T

    HASH

    Abstract: No abstract text available
    Text: TN209 Using the MD5 Hash Library This technical note describes the Message Digest version 5 MD5 hashing algorithm. MD5 is a one-way hash algorithm that addresses two main concerns that are created when communicating over a network: authenticity and data integrity. MD5 is fast and simple, yet offers a higher level of security than MD4 and


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    PDF TN209 16-byte HASH

    TN201

    Abstract: No abstract text available
    Text: TN201 Fast Fourier Transforms on the Rabbit The Fourier transform is frequently used to analyze and modify real world signals and waveforms. The Fourier transform is usually defined as: ∞ ∫ X f = x ( t )e – j2πft dt –∞ When the independent variable corresponds to time, the transform variable corresponds to frequency, in


    Original
    PDF TN201 TN201

    Untitled

    Abstract: No abstract text available
    Text: TN205 How to Get a µC/OS-II Application Running µC/OS-II is a highly configurable, real-time operating system. It can be customized using as many or as few of the operating system’s features as needed. This application note outlines: • the configuration constants used in µC/OS-II,


    Original
    PDF TN205

    2U 37 diode

    Abstract: M810S KT934B diode 2N4000 2N2196 KT934G KT646A 2N6390 2N2197 semelab 2N2197
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 35 40 >= 50 BSX46•6 MH8106 MS106 MS106 BCX55-6 TN2017 2N2017 BC141B ~g~~t~g 55 60 65 70 2N2197 BD415 2N6551 BC141C BSX46·16 BCX55·16 2SD1615 2SD1615 2S01615A 2SD1615A BD320 SD1527·8 BFR22


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    PDF 220AB 205AD 2N4923 2N4000 MM3020 2SD221F BCX56 DTL1653 2U 37 diode M810S KT934B diode 2N4000 2N2196 KT934G KT646A 2N6390 2N2197 semelab 2N2197

    BIOS example source code

    Abstract: 0x00000 PC BIOS Source code TN206
    Text: TN206 How Dynamic C Cold-Boots a Rabbit Target This document describes how Dynamic C versions prior to DC 7.10 bootstrap a Rabbit CPU-based target. Dynamic C assumes that target controller boards using the Rabbit CPU have no pre-installed firmware. It takes advantage of the Rabbit’s bootstrap mode, which allows memory and I/O writes to take place over


    Original
    PDF TN206 BIOS example source code 0x00000 PC BIOS Source code TN206

    TN-200

    Abstract: Rabbit 3000 M68HC11 TN200
    Text: TN200 SPI Using the Rabbit Clocked Serial Ports The Serial Peripheral Interface SPI is a four-wire full-duplex synchronous serial data link that is implemented in many microcontrollers and peripheral devices. The SPI was originally developed by Motorola to


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    PDF TN200 M68HC11 TN-200 Rabbit 3000 TN200

    Z-World little g

    Abstract: 8 pin eprom bios chips TN207 Rabbit 2000 software
    Text: TN207 Rabbit Cloning Board Introduction The Rabbit Cloning Board copies designated portions of flash memory from one Rabbit-based controller the master to another (the clone). Dynamic C version 6.50 or later is needed to use the cloning board. Fast cloning, where the data transfer rate is the maximum allowed by the crystal frequency, was introduced


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    PDF TN207 Z-World little g 8 pin eprom bios chips TN207 Rabbit 2000 software

    TN2010T

    Abstract: No abstract text available
    Text: TN2010T Siliconix NĆChannel EnhancementĆMode MOS Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 200 11 0.8 to 3.0 0.085 Features Benefits Applications D D D D D D D D D D D HighĆVoltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc.


    Original
    PDF TN2010T P-38212--Rev. TN2010T

    62P65

    Abstract: 2P40 2P80 TN20 2P50 PA11 62P50 TN20/13/6
    Text: Philips Components Product specification Iron powder ring cores toroids TN20/13/6 RING CORES (TOROIDS) Effective core parameters SYMBOL PARAMETER VALUE UNIT Σ(I/A) core factor (C1) 2.44 mm−1 Ve effective volume 1020 mm3 Ie effective length 49.9 mm Ae


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    PDF TN20/13/6 MGC329 TN20/13/6 TN20/13/6-2P50 TN20/13/6-2P65 TN20/13/6-2P80 TN20/13/6-2P90 TN20/13/6-2P40 62P65 2P40 2P80 TN20 2P50 PA11 62P50

    tn2010l

    Abstract: TN2010 TN201
    Text: BW 5P& TN201 OL, TN241 OL N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY TO-92 TO-226AA V(BRJDSS PART NUMBER 'X ' •d (A) TN2010L 200 10 0.18 TN2410L 240 10 0.18 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VNDB24 3 1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)


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    PDF TN201 TN241 O-226AA) TN2010L TN2410L VNDB24 TN2010

    TN2010

    Abstract: No abstract text available
    Text: Temic TN2010T S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS M i n (V ) rDS(on) 200 Max (Q) 11 Features V G S< th)(V ) ID (A) 0.8 to 3.0 0,12 Benefits Low On-Resistance: 9.5 Q Secondary Breakdown Free: 220 V


    OCR Scan
    PDF TN2010T 2010T S-52426-- 14-Apr-97 TN2010

    2A 5A10

    Abstract: NSD106 NSD104 NSD6178 TO-202 transistor NPN 2N4239 2N5321 D40D10 D40D11 D40D13
    Text: NATL SEMICÔND DISCRETE 2SE D- • bSG113Q GQ377âS 1 ■ 7"^/ NPN Medium Power Transistors by Ascending Vceo (Continued) H fe @ lc /V Ce Vce (sat) (V) ’ Vceo (V) Min Max (mA/V) NSE181 PN3568 TN2017 60 60 60 50 40 50 250 120 200 10/1 150/1 200/10 0.9 0.25


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    PDF bSG113Q GQ377aS NSE181 PN3568 TN2017 O-202 O-237 TN2102 2N5321 2A 5A10 NSD106 NSD104 NSD6178 TO-202 transistor NPN 2N4239 D40D10 D40D11 D40D13

    TN20

    Abstract: No abstract text available
    Text: NI C THERMISTORS SMD TYPE • TN20, TN23, TC20 Series • • • • Fesistance tolerance. ±5%, ±10% R=25°C E value tolerance.±3%, ±5% (B25 / 50) Termination. Solder plated nickel barrier


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    PDF 2S400 4C302 TN20

    VNDB24

    Abstract: TN201 VN2406L
    Text: VNDB24 N-Channel Enhancement-Mode MOSFET TYPE PACKAGE Single TO-220 VN2406D Single TO-92 TO-226AA VN2406L, TN201 OL, TN2410L Single TO-237 VN2406M Single Chip • Available as VNDB1CHP DEVICE TYPICAL CHARACTERISTICS 1 2 3 4 5 V DS (V) 1 2 V GS (V)


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    PDF VNDB24 O-220 O-226AA) O-237 VN2406D VN2406L, TN201 TN2410L VN2406M VNDB24 VN2406L

    2N6591

    Abstract: No abstract text available
    Text: NATL SEMICÔND DISCRETE 2SE ». • bSG1130 G0377Ô5 1 ■ NPN Medium Power Transistors by Ascending Vceo (V) Min NSE181 PN3568 TN2017 60 60 60 50 40 50 250 120 200 TN2102 65 40 2N5321 D40D10 D40D11 D40D13 D40D14 NSD6178 75 75 75 75 75 75 40 50 120 50 120


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    PDF bSG1130 G0377 NSE181 PN3568 TN2017 TN2102 2N5321 D40D10 D40D11 D40D13 2N6591

    TN2010L

    Abstract: No abstract text available
    Text: .Zf in c o rp o ra te d VNDB1 DIE N-Channel Enhancement-Mode MOS Transistor V N D B 1C H P * TN2010L TN2410L VN2406D/L/M VN2410L/M ‘ Meets or exceeds specification for all part numbers listed below For additional design information please consult the typical performance curves VNDB24.


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    PDF TN2010L TN2410L VN2406D/L/M VN2410L/M VNDB24.