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    TME 126 Search Results

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    PSS-04-103

    Abstract: saab space packet wire TME 87 PSS-04-151 P-ASIC-NOT-00122-SE PSS-04-106 K1784 TME 57 PSS-04-107 SAAB
    Text: Saab Space AB Dokument ID Document ID Frisläppt datum Date Released Utgåva Issue Informationsklass Classification P-ASIC-NOT-00122-SE 2007-04-23 12 Company Restricted Sida Page 2 SUMMARY The SCTMTC ASIC User's Manual defines how the SCTMTC ASIC is to be used.


    Original     		PDF P-ASIC-NOT-00122-SE ESA/C/290, PSS-04-103 saab space packet wire TME 87 PSS-04-151 P-ASIC-NOT-00122-SE PSS-04-106 K1784 TME 57 PSS-04-107 SAAB

    diode y4p

    Abstract: MTD20N03HDL MJ200
    Text: MOTOROLA SEMICONDUCTOR TECHN!GAL DATA Product Preview HDTMOSTM E-FETTM High Density Power FET MTD20N03HDL This advanced high-cell density HDTMOS E-FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also


    Original     		PDF MTD20N03HDL 20Adc, diode y4p MTD20N03HDL MJ200

    IDQ25186

    Abstract: MA721 VSS1641NC IMX72 Li-49 39NC60 motorola bq50
    Text: Order ttis document by 5VFPMB72D/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1Mx72 DRAM Dual-In-Line Memory Module DIMM 5 V, FPM, Buffered For Error Correction Code Applications 8 Megabyte . JEDEC–Standard ● Single 5 V Power Supply, ~L_Compatible ● Fast Page Mode (FPM)


    Original     		PDF 5VFPMB72D/D 1Mx72 MA721 BJ48TADG60 140N1-2 5VFPMB72D~ IDQ25186 VSS1641NC IMX72 Li-49 39NC60 motorola bq50

    saab space packet wire

    Abstract: 7693A tme 126 AT7909E LA 7693 AT7909EKA-E CPDU MH1RT SMART ASIC 197 telemetry command protocol
    Text: Features • • • • • • • • • • System-on-chip technology to handle all ground link communication Can be operated independently from a processor Re-definable by the use of different mission PROM Supports multiple sources of CPDU segments Packet wire or Space Wire control interface for all chip accesses


    Original     		PDF 16-bit 256-pin saab space packet wire 7693A tme 126 AT7909E LA 7693 AT7909EKA-E CPDU MH1RT SMART ASIC 197 telemetry command protocol

    TME 87

    Abstract: tme 126
    Text: Features • • • • • • • • • • System-on-chip technology to handle all ground link communication Can be operated independently from a processor Re-definable by the use of different mission PROM Supports multiple sources of CPDU segments Packet wire or Space Wire control interface for all chip accesses


    Original     		PDF 16-bit 256-pinerves TME 87 tme 126

    tme 126

    Abstract: T092 ZRA125 B25C tme+126
    Text: PRECISION 1.25 VOLT MICROPOWER VOLTAGE REFERENCE ZRA125 \ L ISSUE 1- OCTOBER 1995 FEATURES DEVICE DESCRIPTION The ZRA125 uses a bandgap circuit design to achieve a precision micropower voltage reference of 1.25 volts. The device is available in small outline surface mount packages, ideal


    Original     		PDF ZRA125 30pprTv ZRA125 5011Aand 2002040w tme 126 T092 B25C tme+126

    tme 126

    Abstract: transistor TT 2442 MGW12N120D 3EML
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MGW12N120D/D DATA e Product Preview Data Sheet Insulated Gate BipoMar Transistor with Anti-Parallel Diode N-Channel Enhancement Mode Silicon Gate Ttis Insulated Gate Bipolar Transistor lGB~ is cqackaged


    Original     		PDF MGW12N120D/D MGW12N120DID tme 126 transistor TT 2442 MGW12N120D 3EML

    AVR 32BIT

    Abstract: AT90SC19264RC AT90SC6404RT CRC-16 ISO7816 SA10 SF10 TPG0053A trojan uv sim card cloning device
    Text: General Business Use AT90SC6404RT Security Target Lite General Business Use TPG0053A 24 Nov 04 Atmel makes no warranty for the use of its products, other than those expressly contained in the Company’s standard warranty which is detailed in Atmel’s Terms and Conditions located on the Company’s web site. The Company assumes no responsibility for any errors


    Original     		PDF AT90SC6404RT TPG0053A TPG0053A 24Nov04 AVR 32BIT AT90SC19264RC CRC-16 ISO7816 SA10 SF10 trojan uv sim card cloning device

    MA644CT10TADG60

    Abstract: TK 69 TSOP QN90
    Text: Order thie document by3VFPMU64D~ MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4Mx64 I DRAM Dual-In-Line Memory Module DIMM 3.3 V, FPM, Unbuffered I I 32 Megabyte ● JEDEC–Standard ● Single 3.3 V Power Supply, LWL<ompatible 168–Lead Dual–In-Line ● Memory Module (DIMM)


    Original     		PDF by3VFPMU64D~ 4Mx64 MA644CT10TADG60 MA644CT1OT# MA644CT1 OTADG60 OTADG70 S0217. 3VFPMU64DM MA644CT10TADG60 TK 69 TSOP QN90

    tme 126

    Abstract: MGW12N120 IC9012 Bipolar WPC
    Text: MOTOROLA SEMICONDUCTOR = TECHNICAL DATA Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate MGW12N120 This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high voltage-blocking capability.


    Original     		PDF MGW12N120 O-247 10USminimum tme 126 MGW12N120 IC9012 Bipolar WPC

    MC68HCO5

    Abstract: MC68HC058 MC68HCD Elap 72 pin MAA 723
    Text: I: I : . L rrA3 *0+’ MC68HC05i8 P & ADVANCE INFORMATION @ MOTOROLA TMs document contiins inforfi~tiorihn a new product Specifications and information herein are subjeti to change without notice. .! .\\, .>. ,.:$ .,1.:.$ . .>,+. ‘~f~ -:t, -, ,>.i\.!


    Original     		PDF MC68HC05i8 88Tanners 4-32-l. MC68HCO5 MC68HC058 MC68HCD Elap 72 pin MAA 723

    tme 126

    Abstract: No abstract text available
    Text: HB56UW272E-7B/8B 2,097,152-Word x 72-Bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Buffered 8BYTE DIMM HITACHI Preliminary - Rev. 0.0 Feb. 02, 1996 Description The HB56UW272E belongs to 8 Byte DIMM Dual In-line Memory Module family, and has been


    OCR Scan     		PDF HB56UW272E-7B/8B 152-Word 72-Bit 168-pin HB56UW272E 16-Mbit HM51W17805BTT) 16-bit 74LVT16244) tme 126

    tme 126

    Abstract: TME 87 I 24C026 s/ksmh12/2.27/30/24C0G
    Text: HB56HW164DB-6B/7B 1,048,576-Word x 64-Bit High Density Dynamic RAM Module HITACHI Preliminary Rev 0.0 Apr. 18, 1996 Description The HB56HW164DB is a 1M x 64 dynamic RAM Small Outline Dual In-line Memory Module S.O.DIMM , mounted 4 pieces of 16-Mbit DRAM (HM51W16165BTT) sealed in TSOP package and 1


    OCR Scan     		PDF HB56HW164DB-6B/7B 576-Word 64-Bit HB56HW164DB 16-Mbit HM51W16165BTT) 24C0G) TheHB56HW164-DB H356HW164DB is144-pin tme 126 TME 87 I 24C026 s/ksmh12/2.27/30/24C0G

    Untitled

    Abstract: No abstract text available
    Text: EDI8F64128C ^ E D I 128KX64 SRAM Module ELECTRONIC D£StGN& NC.I 128KX64 Static RAM High Speed CMOS Cache Module Features 1 M Byte Secondary C ach e Module The EDI8F64128C is a high speed 1MByte secondary cache • For use with Intel Pentium Based System s


    OCR Scan     		PDF EDI8F64128C 128KX64 EDI8F64128C 128Kx8 EDI8F64128C15MDC EDI8F64128C20MDC EDI8F64128C25MDC 01581USA EDBF864128C

    Untitled

    Abstract: No abstract text available
    Text: EDI8F32258C 1256Kx32 SRAM Module fe a tu re s 256Kx32 Static RAM CMOS, High Speed Module 256Kx32 bit CMOS Static The EDI8F32258C is a high speed 8 megabit Static RAM Random Access Memory module organized as 256K words by 32 bits. This module is • Access Times


    OCR Scan     		PDF EDI8F32258C 1256Kx32 256Kx32 EDI8F32258C 128Kx8 323G114 EDBF32258C

    939 Processor Functional

    Abstract: RT611 R924
    Text: TABLE OF CONTENTS Paragraph Number Tit|e Page Number Section 1 Introduction 1.1 1.2 1.3 1.4 1.5 1.6 1.6.1 1.6.2 1.7 1.8 1.9 Features. MC68030 Extensions to the M68000 F a m ily.


    OCR Scan     		PDF MC68030 M68000 939 Processor Functional RT611 R924

    MC68030

    Abstract: tme 126 M68000 MC68020 MC68851 939 Processor Functional
    Text: TABLE OF CONTENTS Paragraph Number Tit|e Page Number Section 1 Introduction 1.1 1.2 1.3 1.4 1.5 1.6 1.6.1 1.6.2 1.7 1.8 1.9 Features. MC68030 Extensions to the M68000 F a m ily.


    OCR Scan     		PDF MC68030 M68000 tme 126 MC68020 MC68851 939 Processor Functional

    TME 87

    Abstract: tme 126 BSMD BSMD-5a
    Text: MHTEPTEKC www.i-t.su info@i-t.su Ten: 495 739-09-95, 644-41-29 npeAOxpaHMTenu SMD pa3Mepa 1206 npeflOxpaHMTenM SMD, Tnnopa3Mep 1206, o n e H b 6 b iC T p b ie , c hh3khm conpoTHane- HHewi, repMeTMHHNe. flnana30H pa6oHnxTeMnepaTyp To k pacqenneHHE TewmepaTypa bo^ hobom na^KM


    OCR Scan     		PDF flnana30H AC/300 TME 87 tme 126 BSMD BSMD-5a

    5998CCSF

    Abstract: No abstract text available
    Text: SMA Phase Adjustable In-Series Adapters Female to Male Phase Adjustable Adapter GDI Part No. Max. VSWR 5018CCSF See Graph Below; D C -26.0 GHz 1 Center conductor is captivated rr,e * s- -J~! • “ 'YigCCSF is a coaxial phase -> “ a J i!'-er: inserted in an SMA


    OCR Scan     		PDF 5018CCSF 5998CCSF 5998CCSF

    TME 87

    Abstract: 1ZD12 tme 126 30 oc9 002
    Text: ^EDI EDI8F6432C ß fC T R O M C D ESGNS. M C 32Kx64 SRAM Module 32Kx64 Static RAM High SpeedCMOS Cache Memory/Module Features 256KB Secondary Cache Module The EDI8F6432C is a high speed 256KB secondary cache • For use with Intel Pentium Based Systems module which is ideal for use with many Intel Pentium CPU-based


    OCR Scan     		PDF 256KB 66MHz CELP2X80CS3Z48 EDI8F6432C 32Kx64 EDI8F6432C EDI8F6432C15MDC EDI8F6432C20MDC TME 87 1ZD12 tme 126 30 oc9 002

    OP145C

    Abstract: K6550
    Text: @ OPTEK Product Bulletin OP145A June 1996 GaAs Plastic Infrared Emitting Diodes Types OP145A, OP145B, OP145C, OP145D Features • Wide irradiance pattern • Mechanically and spectrally matched to the OP555 and OP565 series devices • Variety of power ranges


    OCR Scan     		PDF OP145A OP145A, OP145B, OP145C, OP145D OP555 OP565 OP145C K6550

    opo7c

    Abstract: 0P07C 0P-07C 0p07 OP07CN8 op 070 0P07D 0P-07 opo7c0cto u1 741 opamp
    Text: X X u n e A B TECHNOLOGY _ QP-07 Precision Operational Amplifier F€OTUR€S DCSCRIPTIOfl • Guaranteed 2 5 m V max. Offset Voltage ■ Guaranteed 0.6/zV/°C max. Offset Voltage Drift with Temperature ■ Excellent 1.0/xV/Month max. Long Term Stability


    OCR Scan     		PDF QP-07 0P-07 5VMI55 0C40UM 100CC/W opo7c 0P07C 0P-07C 0p07 OP07CN8 op 070 0P07D opo7c0cto u1 741 opamp

    opo7c

    Abstract: 0P07C
    Text: ÆL—f r r u i m i TECHNOLOGY _QP-07 Precision Operational Amplifier F€flTUR€S DCSCRIPTIOn • Guaranteed 25^ V max. Offset Voltage ■ Guaranteed 0.6/zV/°C max. Offset Voltage Drift with Temperature ■ Excellent I.O^V/Month max. Long Term Stability


    OCR Scan     		PDF QP-07 0P-07 opo7c 0P07C

    TME 87 0D

    Abstract: No abstract text available
    Text: SIEMENS 3.3V 8M x 64-Bit EDO-DRAM Module 3.3V 8M x 72-Bit EDO-DRAM Module HYM64V8005GU-50/-60 HYM64V8045GU-50/-60 HYM72V8005GU-50/-60 HYM72V8045GU-50/-60 168pin unbuffered DIMM Module with serial presence detect * 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-Line Memory Module


    OCR Scan     		PDF 64-Bit 72-Bit 168pin HYM64V8005GU-50/-60 HYM64V8045GU-50/-60 HYM72V8005GU-50/-60 HYM72V8045GU-50/-60 DM168-13 TME 87 0D