TMD0507-2A
Abstract: No abstract text available
Text: MICROWAVE POWER MMIC AMPLIFIER TMD0507-2A MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=33.0dBm at 5.1GHz to 7.2GHz HIGH GAIN G1dB=22.0dB at 5.1GHz to 7.2GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS
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TMD0507-2A
11E1A)
000pF
TMD0507-2A
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TOSHIBA MICROWAVE AMPLIFIER
Abstract: TMD0507-2A Microwave PIN diode MMIC mmic A power amplifier
Text: MICROWAVE POWER MMIC AMPLIFIER TMD0507-2A MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES BROAD BAND INTERNALLY MATCHED HIGH POWER P1dB=33.0dBm at 5.1GHz to 7.2GHz HIGH GAIN G1dB=22.0dB at 5.1GHz to 7.2GHz HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS
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TMD0507-2A
TOSHIBA MICROWAVE AMPLIFIER
TMD0507-2A
Microwave PIN diode
MMIC
mmic A
power amplifier
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TGI8596-50
Abstract: TMD7185-2 TIM5359-60SL TIM8996-30 X-band Gan Hemt TGI1414-50L TMD0305-2 tim5964-60sl TIM5964-6UL TIM5359-4UL
Text: ▼ Microwave Semiconductors Product Guide 2009 Power GaAs FETs and GaAs MMICs Pout vs. Frequency Map .3 C-band Internally Matched Power GaAs FETs Pout vs. Frequency Map .4
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MSE-2008
MSE-2009
TGI8596-50
TMD7185-2
TIM5359-60SL
TIM8996-30
X-band Gan Hemt
TGI1414-50L
TMD0305-2
tim5964-60sl
TIM5964-6UL
TIM5359-4UL
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TMD1414-2
Abstract: TGM9398-25 8596-50
Text: Product Guide 2014 Microwave Semiconductors GaAs MMICs L and S-band Partially Matched Power GaAs FETs Pout vs. Frequency Map 80 49 48 60 TPM2828-60❋ TPM1919-60 40 46 44 ● Output Power vs. Frequency Map GaAs MMICs L and S-band Partially Matched Power GaAs FETs . 3
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TPM2828-60â
TPM1919-60
TPM2828-9â
TMD0708-2
TMD0608-4
TMD7185-2
TMD5872-2
TMD1925-3
TMD1013-1-431
TMD0507-2A
TMD1414-2
TGM9398-25
8596-50
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TMD0507-2
Abstract: No abstract text available
Text: TOSHIBA • TD^EM? Q0214Ö7 b33 H POWER GaAs MMIC MICROWAVE SEMICONDUCTOR TECHNICAL DATA TMD0507-2 Features: ■ HIGH POWER ■ BROAD BAND INTERNALLY MATCHED PldB= 33 dBm at 5. 1 to 7. 2 GHz ■ HIGH GAIN ■ HERMETICALLY SEALED PACKAGE GldB= 22 dB at 5. 1 to 7. 2 GHz
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QDS14Ã
TMD0507-2
TMD0507
2-11E1A)
TMD0507-2
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TMD0507-2A
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs MMIC TMD0507-2A MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • High Power ■ Broadband Internally Matched PldB=33dBm a t 5.1 to 7.2GHz ■ ■ Hermetically Sealed Package High Gain GldB=22dB a t 5.1 to 7.2GHz ABSOLUTE MAXIMUM RATINGS Ta=25°C
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TMD0507-2A
33dBm
260Flanges
TMD0507-2A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA • 0 0 2 1 4 0 7 b33 H ^ J j POWER GaAs MMIC MICROWAVE SEMICONDUCTOR TMD0507-2 TECHNICAL DATA Features^ ■ BROAD BAND INTERNALLY MATCHED ■ HIGH POWER PldB= 33 dBm at 5. 1 to 7. 2 GHz ■ HERMETICALLY SEALED PACKAGE ■ HIGH GAIN GldB= 22 dB at 5. 1 to 7. 2 GHz
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TMD0507-2
TMD0507
2-11E1A)
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs MMIC TMD0507-2A MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • High Power Broadband Internally Matched PldB=33dBm at 5.1 to 7.2GHz ■ Hermetically Sealed Package High Gain GldB=22dB at 5.1 to 7.2GHz ABSOLUTE MAXIMUM RATINGS Ta=25°C
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33dBm
TMD0507-2A
607-2A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA POWER GaAs MMIC MICROWAVE SEMICONDUCTOR TECHNICAL DATA TMD0507-2 • Features• ■ HIGH POWER ■ BROAD BAND INTERNALLY MATCHED PldB= 33 dBm at 5. 1 to 7. 2 GHz ■ HIGH GAIN ■ HERMETICALLY SEALED PACKAGE GldB= 22 dB at 5. 1 to 7. 2 GHz ABSOLUTE MAXIMUM RATINGS Ta=25°C
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TMD0507-2
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