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    TK15A60 Price and Stock

    Toshiba America Electronic Components TK15A60U(STA4,Q,M)

    MOSFET N-CH 600V 15A TO220SIS
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    Toshiba America Electronic Components TK15A60D(STA4,Q,M)

    MOSFET N-CH 600V 15A TO220SIS
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    Mouser Electronics TK15A60D(STA4,Q,M) 63
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    Toshiba America Electronic Components TK15A60U(STA4,X,S)

    TK15A60U - MOSFET N-Channel 600V 15A
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    Rochester Electronics TK15A60U(STA4,X,S) 37,450 1
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    Toshiba America Electronic Components TK15A60UQ

    SILICON N CHANNEL MOS TYPE (DTMOS II) FIELD EFFECT TRANSISTOR Power Field-Effect Transistor, 15A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA TK15A60UQ 106
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    TK15A60 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TK15A60D Toshiba Transistors - Mosfets Original PDF
    TK15A60D Toshiba Japanese - Transistors - Mosfets Original PDF
    TK15A60D(Q) Toshiba TK15A60D - Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220SIS Original PDF
    TK15A60D(STA4,Q,M) Toshiba TK15A60D - Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220SIS Original PDF
    TK15A60U Toshiba Japanese - Transistors - Mosfets Original PDF
    TK15A60U Toshiba Transistors - Mosfets Original PDF
    TK15A60U(STA4,Q,M) Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 15A TO-220SIS Original PDF

    TK15A60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TK15A60D

    Abstract: K15A60D TK15A60D N K15A60 TK15A60 k15a
    Text: TK15A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK15A60D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 Ω(typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original     		PDF TK15A60D TK15A60D K15A60D TK15A60D N K15A60 TK15A60 k15a

    K15A60D

    Abstract: TK15A60D K15A60 k15a
    Text: TK15A60D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ TK15A60D スイッチングレギュレータ用 単位: mm 10 ± 0.3 Ф3.2 ± 0.2 : IDSS = 10 A (最大) (VDS = 600 V) 15.0 ± 0.3 : |Yfs| = 8.5 S (標準) 順方向伝達アドミタンスが高い。


    Original     		PDF TK15A60D K15A60D TK15A60D K15A60 k15a

    TK15A60S

    Abstract: TK15A60 TK15A
    Text: TK15A60S TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS Preliminary TK15A60S (S3F21) Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.26Ω (typ.) High forward transfer admittance: Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		PDF TK15A60S S3F21) TK15A60S TK15A60 TK15A

    Untitled

    Abstract: No abstract text available
    Text: TK15A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II TK15A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.)


    Original     		PDF TK15A60U

    K15A60

    Abstract: No abstract text available
    Text: TK15A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK15A60D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original     		PDF TK15A60D K15A60

    K15A60D

    Abstract: K15A60 TK15A60D S1612
    Text: TK15A60D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ TK15A60D スイッチングレギュレータ用 単位: mm 10 ± 0.3 Ф3.2 ± 0.2 : IDSS = 10 A (最大) (VDS = 600 V) 15.0 ± 0.3 : |Yfs| = 8.5 S (標準) 順方向伝達アドミタンスが高い。


    Original     		PDF TK15A60D K15A60D K15A60 TK15A60D S1612

    k15a60u

    Abstract: K15A60 TK15A60U k15a
    Text: TK15A60U 東芝電界効果トランジスタ シリコンNチャネルMOS形 DTMOSⅡ TK15A60U ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.24Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 8.5 S (標準)


    Original     		PDF TK15A60U SC-67 2-10U1B 20070701-JA k15a60u K15A60 TK15A60U k15a

    K15A60

    Abstract: k15a60u TK15A60U k15a TK15A60 2415a TK15A
    Text: TK15A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II TK15A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.)


    Original     		PDF TK15A60U K15A60 k15a60u TK15A60U k15a TK15A60 2415a TK15A

    K15A60D

    Abstract: No abstract text available
    Text: TK15A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK15A60D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original     		PDF TK15A60D K15A60D

    K15A60

    Abstract: K15A60U TK15A60 k15a TK15A60U TK15A A2440
    Text: TK15A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK15A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.24Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.)


    Original     		PDF TK15A60U K15A60 K15A60U TK15A60 k15a TK15A60U TK15A A2440

    K15A60U

    Abstract: No abstract text available
    Text: TK15A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II TK15A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.24 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.)


    Original     		PDF TK15A60U K15A60U

    k15a60u

    Abstract: TK15A60U k15a K15A60 TK15A60
    Text: TK15A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK15A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.)


    Original     		PDF TK15A60U k15a60u TK15A60U k15a K15A60 TK15A60

    k15a60u

    Abstract: K15A60 TK15A60
    Text: TK15A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK15A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.24Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.)


    Original     		PDF TK15A60U k15a60u K15A60 TK15A60

    k15a60d

    Abstract: K15A60 TK15A60D N k15a
    Text: TK15A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK15A60D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original     		PDF TK15A60D k15a60d K15A60 TK15A60D N k15a

    circuit diagram of luminous inverter

    Abstract: TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG
    Text: 2009-9 SYSTEM CATALOG Home Appliances SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Induction Rice Cookers Refrigerators Air Conditioners Automatic Washing Machines Dishwashers •CONTENTS Characteristics of Motor Control Devices Overview of Toshiba’s Semiconductor Devices for Home Appliances


    Original     		PDF BCE0013C circuit diagram of luminous inverter TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    fast tlp785

    Abstract: TK10A60D 5252 F solar tcv7116 TPH1400ANH
    Text: System Catalog 2012-12 Semiconductors for Power Supplies SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng –2 Power Supply Circuit Types and Their Applications Switching Power Supplies AC-DC Resonant Half-Bridge Power Supplies Up to around 800 W


    Original     		PDF SCE0024F fast tlp785 TK10A60D 5252 F solar tcv7116 TPH1400ANH

    TB6819

    Abstract: to220sis TK12A60D TK13A60D TB6819FG TK12A60U TO220-sIS TK12J60U TK12 SSOP16
    Text: 09tf-B-4 AC-DCコンバータ用CCM方式PFC制御IC TB6818FG G Continuous-Conduction Mode type Power Factor Correction PFCトランス音鳴り防止を実現 特 長 ブロック図 ● 動作電圧範囲： 8.4 V（Min）~ 26 V（Max） ● 起動電圧：10.0 V（Typ.）


    Original     		PDF 09tf-B-4 TB6818FG TB6819FG TB6820FG SSOP16/DIP16 SSOP16 TK12A60D TK13A60D TK12A60U TB6819 to220sis TK12A60D TK13A60D TB6819FG TK12A60U TO220-sIS TK12J60U TK12 SSOP16

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603

    Untitled

    Abstract: No abstract text available
    Text: TB6819AFG TOSHIBA BiCD Integrated Circuit Silicon Monolithic TB6819AFG Critical Conduction Mode CRM PFC Controller IC Features • Operating voltage range: 10.0 to 25 V • Startup voltage: 12.0 V (typ.) • Maximum drive current: 1.0 A • Variety of protection circuits


    Original     		PDF TB6819AFG OP8-P-225-1

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    2SK4207

    Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		PDF BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03