Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    K15A60D Search Results

    SF Impression Pixel

    K15A60D Price and Stock

    Toshiba America Electronic Components TK15A60D(STA4,Q,M)

    MOSFET N-CH 600V 15A TO220SIS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TK15A60D(STA4,Q,M) Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Mouser Electronics TK15A60D(STA4,Q,M) 127
    • 1 $2.57
    • 10 $2.05
    • 100 $1.51
    • 1000 $1.08
    • 10000 $1.02
    		Buy Now

    K15A60D Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TK15A60D

    Abstract: K15A60D TK15A60D N K15A60 TK15A60 k15a
    Text: K15A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K15A60D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 Ω(typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original     		TK15A60D TK15A60D K15A60D TK15A60D N K15A60 TK15A60 k15a PDF

    K15A60D

    Abstract: TK15A60D K15A60 k15a
    Text: K15A60D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K15A60D スイッチングレギュレータ用 単位: mm 10 ± 0.3 Ф3.2 ± 0.2 : IDSS = 10 A (最大) (VDS = 600 V) 15.0 ± 0.3 : |Yfs| = 8.5 S (標準) 順方向伝達アドミタンスが高い。


    Original     		TK15A60D K15A60D TK15A60D K15A60 k15a PDF

    K15A60

    Abstract: No abstract text available
    Text: K15A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K15A60D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original     		TK15A60D K15A60 PDF

    K15A60D

    Abstract: K15A60 TK15A60D S1612
    Text: K15A60D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K15A60D スイッチングレギュレータ用 単位: mm 10 ± 0.3 Ф3.2 ± 0.2 : IDSS = 10 A (最大) (VDS = 600 V) 15.0 ± 0.3 : |Yfs| = 8.5 S (標準) 順方向伝達アドミタンスが高い。


    Original     		TK15A60D K15A60D K15A60 TK15A60D S1612 PDF

    K15A60D

    Abstract: No abstract text available
    Text: K15A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K15A60D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original     		TK15A60D K15A60D PDF

    k15a60d

    Abstract: K15A60 TK15A60D N k15a
    Text: K15A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K15A60D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original     		TK15A60D k15a60d K15A60 TK15A60D N k15a PDF