Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TIP 152 TRANSISTOR Search Results

    TIP 152 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TIP 152 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MMA60

    Abstract: 8 mu 0833 MCE Metelics
    Text: MMA601 High Linearity HBT Die FEATURES • • • • + 44 dBm IP3 at 2.1 GHz + 26 dBm Output Power at P-1dB Compression 50% Power added efficiency typical 100 MHz to 5000 MHz Operation The MMA601 is an InGaP Heterojunction Bipolar Transistor (HBT) provided


    Original     		PDF MMA601 MMA601 44dBm MMA60 8 mu 0833 MCE Metelics

    Untitled

    Abstract: No abstract text available
    Text: Xcelite Table of Contents Xcelite®, founded in 1921, produces high quality tools for professional use. They are known throughout the electronics industry for a comprehensive line of screwdrivers, nutdrivers, convertible nutdriver/ screwdriver sets, interchangeable blade drivers, service tools and kits, pliers and cutters, shears, snips, wire strippers and


    Original     		PDF

    7007S

    Abstract: BARb TRANSISTOR SMD Diode HER 507
    Text: WOW! Catalogue World of Weller Inhalt 2 Page 06 – Seite 219 Soldering, Microtools, Desoldering, Hot Air, Rework, Fume Extraction, Electronic Screwdrivers, Dispensing Systems, Accessories, etc. Page 220 – Seite 323 Tweezers, Cutters, Pliers, EROP, Stripping Tools, Kits, etc.


    Original     		PDF

    4066 spice model

    Abstract: marking r4 SOT343 RF LNA" 1 to 2 GHz" spice
    Text: Freescale Semiconductor Technical Data MBC13900/D Rev. 0, 6/2002 MBC13900 Scale 2:1 MBC13900 Package Information Plastic Package Case 318M (SOT-343) NPN Silicon Low Noise Transistor Ordering Information 1 Introduction The MBC13900 is a high performance transistor


    Original     		PDF MBC13900/D MBC13900 MBC13900T1 OT-343) OT-343 MBC13900 SC-70 318M-01, 4066 spice model marking r4 SOT343 RF LNA" 1 to 2 GHz" spice

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MBC13900/D Rev. 1.1, 06/2005 MBC13900 Scale 2:1 MBC13900 Package Information Plastic Package Case 318M (SOT-343) NPN Silicon Low Noise Transistor Ordering Information 1 1 Introduction The MBC13900 is a high performance transistor


    Original     		PDF MBC13900/D MBC13900 OT-343) MBC13900 SC-70

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MBC13900/D Rev. 1, 05/2005 MBC13900 Scale 2:1 MBC13900 Package Information Plastic Package Case 318M (SOT-343) NPN Silicon Low Noise Transistor Ordering Information Device MBC13900T11 MBC13900NT1 1


    Original     		PDF MBC13900/D MBC13900 MBC13900T11 MBC13900NT1 OT-343) OT-343 OT-343

    318M

    Abstract: LL1608-FH MBC13900 MBC13900T1 marking r4 SOT343 SOT343 lna
    Text: Technical Data MBC13900/D Rev. 0, 06/2002 MBC13900 NPN Silicon Low Noise Transistor Scale 2:1 Package Information Plastic Package Case 318M (SOT-343) Ordering Information Device Marking Package MBC13900T1 900 SOT-343 The MBC13900 is a high performance transistor fabricated using Motorola’s 15 GHz fτ


    Original     		PDF MBC13900/D MBC13900 OT-343) MBC13900T1 OT-343 MBC13900 SC-70 318M LL1608-FH MBC13900T1 marking r4 SOT343 SOT343 lna

    LL1608-FH

    Abstract: MBC13900 MBC13900NT1 MBC13900T1 Functional details of ic 4066 K 2545
    Text: Freescale Semiconductor Technical Data Document Number: MBC13900/D Rev. 1.1, 06/2005 MBC13900 Scale 2:1 MBC13900 Package Information Plastic Package Case 318M (SOT-343) NPN Silicon Low Noise Transistor Ordering Information Device MBC13900T11 MBC13900NT1


    Original     		PDF MBC13900/D MBC13900 OT-343) MBC13900T11 MBC13900NT1 MBC13900 SC-70 LL1608-FH MBC13900NT1 MBC13900T1 Functional details of ic 4066 K 2545

    0338 transistor

    Abstract: marking r4 SOT343
    Text: Freescale Semiconductor Technical Data Document Number: MBC13900/D Rev. 1.1, 06/2005 MBC13900 Scale 2:1 MBC13900 Package Information Plastic Package Case 318M (SOT-343) NPN Silicon Low Noise Transistor Ordering Information Device MBC13900T11 MBC13900NT1


    Original     		PDF MBC13900/D MBC13900 MBC13900T11 MBC13900NT1 OT-343) OT-343 OT-343 0338 transistor marking r4 SOT343

    4066 spice model

    Abstract: LL1608-FH MBC13900 MBC13900T1
    Text: Freescale Semiconductor, Inc. Technical Data MBC13900/D Rev. 0, 06/2002 MBC13900 NPN Silicon Low Noise Transistor Scale 2:1 Freescale Semiconductor, Inc. Package Information Plastic Package Case 318M (SOT-343) Ordering Information Device Marking Package


    Original     		PDF MBC13900/D MBC13900 OT-343) MBC13900T1 OT-343 MBC13900 SC-70 4066 spice model LL1608-FH MBC13900T1

    low noise, hetero junction fet

    Abstract: high frequency transistor ga as fet NE27200 s11 diode shottky NE32500 nec, hetero junction transistor GA 88 KA 88
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32500, NE27200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable


    Original     		PDF NE32500, NE27200 NE32500 NE27200 NE32500 low noise, hetero junction fet high frequency transistor ga as fet s11 diode shottky nec, hetero junction transistor GA 88 KA 88

    SK 18752

    Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
    Text: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,


    Original     		PDF O03ED0 dete7837 H1-O03ED0-0805020NM SK 18752 SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751

    transistor NEC D 882 p

    Abstract: nec d 882 p datasheet nec d 882 p Nec K 872 nec d 882 p transistor KA transistor 26 to 40 GHZ transistor NEC D 587 NE32400 transistor NEC 882 p NE24200
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32400, NE24200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32400 and NE24200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable


    Original     		PDF NE32400, NE24200 NE32400 NE24200 NE32400 transistor NEC D 882 p nec d 882 p datasheet nec d 882 p Nec K 872 nec d 882 p transistor KA transistor 26 to 40 GHZ transistor NEC D 587 transistor NEC 882 p

    NE900474-13

    Abstract: NE900474-15 NE9004 NE900400G NE900 NE9002 AN-1001 NE9000 NE9001 UM1000
    Text: NE9004 SERIES Ku-BAND POWER GaAs MESFET FEATURES • DESCRIPTION NE900474-13, -15 OUTPUT POWER AND POWER ADDED EFFICIENCY vs. INPUT POWER 35 The NE9004 is a 0.5 micron recessed gate GaAs power FET for commercial and space amplifier and oscillator applications to 20 GHz. This device is part of the NE900 series of KuBand power transistors which includes the NE9000, NE9001


    Original     		PDF NE9004 NE900474-13, NE9004 NE900 NE9000, NE9001 NE9002. 24-Hour NE900474-13 NE900474-15 NE900400G NE9002 AN-1001 NE9000 NE9001 UM1000

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32500, NE27200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AIGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable


    OCR Scan     		PDF NE32500, NE27200 NE32500 NE27200 NE32500

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32400, NE24200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32400 and NE24200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AIGaAs and undoped InGaAs to create high m obility electrons. Its excellent low noise and high associated gain make it suitable


    OCR Scan     		PDF NE32400, NE24200 NE32400 NE24200 NE32400

    Untitled

    Abstract: No abstract text available
    Text: * M * DISCRETE SEMICONDUCTORS LLE16350X NPN silicon planar epitaxial microwave power transistor Preliminary specification File under Discrete Semiconductors, SC15 October 1992 Philips Semiconductors PHILIPS bbS3T31 003301b ^ P h ilip s S em iconductors P relim inary sp e cifica tio n


    OCR Scan     		PDF LLE16350X bbS3T31 003301b 33Q2M

    Untitled

    Abstract: No abstract text available
    Text: HEIjJLETT-PACKARDn CMPNTS 2DE D H 44475Ö4 OOQSSSfl 4 E9 T - Low N oise Transistors HXTR-6001 Chip * 2N6617 HXTR-6101, TX Technical Data 2N6742 ( h x t r - 6102, t x and TXV 2N6618 (HXTR-6103, TX and TXV) 2N6743 (HXTR-6104, TX and TXV) Features D escription


    OCR Scan     		PDF HXTR-6001 2N6617 HXTR-6101, 2N6742 2N6618 HXTR-6103, 2N6743 HXTR-6104, MIL-S-19500,

    NEC 82 A 0839

    Abstract: NE27200 NE32500
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32500, NE27200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AIGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable


    OCR Scan     		PDF NE32500, NE27200 NE32500 NE27200 NEC 82 A 0839

    Untitled

    Abstract: No abstract text available
    Text: HC-5502B HARRIS S E M IC O N D U C T O R s u e Subscriber Line Interface Circuit M arch 1993 Features Description • Pin For Pin Replacement For The HC-5502A The H arris SUC incorporates m any o f the BORSHT function on a single IC chip. This includes DC battery feed, a ring relay driver,


    OCR Scan     		PDF HC-5502B HC-5502A 100kn 50msec. HC-550X

    HXTR-2001

    Abstract: HXTR-5001 HXTR-5002 HXTR-6001 transistor PT 4500 chip die npn transistor equivalent transistor PT 3500 HXTR5
    Text: KOP Features HXTR-6001 I 0.013 TYP. • EMITTER PAD CIRCUITS M r COM PONENTS LOW NOISE TRANSISTOR CHIP ■- LOW NOISE FIGURE 1.7 dB Typical at 2 GHz 2.7 dB Typical at 4 GHz HIGH GAIN AT NOISE FIGURE BIAS 13.0 dB Typical at 2 GHz 9.0 dB Typical at 4 GHz 330 (0.013)


    OCR Scan     		PDF HXTR-6001 HXTR-6001 HXTR-5001 HXTR-5002 HXTR-2001 transistor PT 4500 chip die npn transistor equivalent transistor PT 3500 HXTR5

    Untitled

    Abstract: No abstract text available
    Text: F IN A L ü Am7942 Advanced Micro Devices Subscriber Line interface Circuit DISTINCTIVE CHARACTERISTICS • Programmable constant current feed ■ -1 9 V to -5 8 V battery operation ■ Receive current gain = 200 ■ ■ Programmable loop detect threshold


    OCR Scan     		PDF Am7942 EIA/TIA-464-A. Am7942

    Untitled

    Abstract: No abstract text available
    Text: CF004 Series GaAs Pseudomorphic HEMT and MESFET Chips J Super Low Noise: 1.5 dB at 18 G H z □ High Gain: Usable to 44 GHz □ Flat Gain for Distributed Amplifiers □ Active Layers Include: Pseudomorphic H E M T , Epitaxial and Ion Implanted J W afer Qualification Procedure


    OCR Scan     		PDF CF004 CF004-01. CF004-02 CF004-03 CF004-01

    transistor I 17-13 0773

    Abstract: No abstract text available
    Text: H EW L E T T I x l PA CK A R D w a rn 4.8 V NPN Common Emitter Medium Power Output Transistor Technical Data AT-31625 Features • 4.8 Volt Operation • +28.0 dBm Pout @ 900 MHz, Typ. • 70% Collector Efficiency @ 900 MHz, Typ. • 9 dB Power Gain @ 900 MHz,


    OCR Scan     		PDF AT-31625 OT-223 AT-31625 transistor I 17-13 0773