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    TIP 115 TRANSISTOR Search Results

    TIP 115 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TIP 115 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CV112

    Abstract: TIP110 TIP111 TIP112 TIP115 TIP116 TIP117
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package TIP 110, 111, 112 TIP 115, 116, 117 TIP110, TIP111, TIP112 TIP115, TIP116, TIP117 NPN PLASTIC POWER TRANSISTORS


    Original     		PDF O-220 TIP110, TIP111, TIP112 TIP115, TIP116, TIP117 C-120 CV112 TIP110 TIP111 TIP112 TIP115 TIP116 TIP117

    Untitled

    Abstract: No abstract text available
    Text: Unique Surface/Insertion Probes 88000 Series MADE IN USA Model 88008 * $ 115 Micro-sensor probe, designed for precise measurements of small surface areas, such as transistors and integrated circuits. Small contact surface area of 0.040 x 0.118" for fast response.


    Original     		PDF

    FSW-112R-A

    Abstract: No abstract text available
    Text: INDUSTRIAL FLOW SWITCHES With No Moving Parts B FSW-118 1⁄2" NPT ߜ High/Low Alarm Indication for Air or Liquids ߜ Wide Range of Field Adjustable Settings ߜ High Reliability–No Moving Parts ߜ Compact, Integral Design ߜ Transistor or Relay Output


    Original     		PDF FSW-118 FSW-112R-A FSW112T FSW-100 316SS FSW-112R-A

    OLM80U

    Abstract: BSP 1 thread OLM01T
    Text: OLM Series High performance optical liquid level switches FEATURES • Solid state technology, no moving parts · TTL compatible or transistor output · 10 mA or 800 mA output current · Stainless steel housing · High media compatibility · Fast response, electrically robust


    Original     		PDF OLM01T. OLM80U. OLM80U BSP 1 thread OLM01T

    2n3055

    Abstract: bd 3055
    Text: POWER CASES TRANSISTORS ; _ P - 2 2 _ TQ- ?_ TQ- 220 T Y P E NPN PNP SDT 9302 SDT 9303 SDT 9304 SDT 9305 SDT 9306 SDT 9307 SDT 9308 SDT 9309 $ TIP 29 $ TIP 30 $ TIP 29A $ TIP 30A $ TIP 29B $ TIP 30B


    OCR Scan     		PDF O-220 T0-220 2n3055 bd 3055

    tip 25c

    Abstract: TIP 120c TIP NPN npn tip TIP117 tip 117 tip darlington pnp 470M darlington tip 110 TIP112
    Text: S A N Y O NPN TIP110 TIP111 TIP112 SEM ICONDUCTOR PNP TIP115 TIP116 TIP117 DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-80-100 VOLFS, 2 AMPERE HIGH CURRENT GAIN h F E = 4000 typ. @3V, 1.5A LOW SATURATION VOLTAGE V C E S A T = 1-0V typ. @1.5A MONOLITHIC CONSTRUCTION WITH BUILT-IN


    OCR Scan     		PDF TIP110 TIP115 TIP111 TIP116 TIP112 TIP117 TIP110, TIP115 TIP111, TIP116 tip 25c TIP 120c TIP NPN npn tip TIP117 tip 117 tip darlington pnp 470M darlington tip 110

    Bow94c

    Abstract: MJE 131 BD 147 tip 220 sgs mosfet SGSD93G b0333 B0680 bow93b bdw 34 a
    Text: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80


    OCR Scan     		PDF BDX53 Bow94c MJE 131 BD 147 tip 220 sgs mosfet SGSD93G b0333 B0680 bow93b bdw 34 a

    3055t

    Abstract: bdw 51 52 SGS TIP 32 mj 3055 npn 2955t B0536 bd 911 mj 2955 npn bd 3055 TIP 3771
    Text: Æ J SGS-THOMSON ^ 7# RiiOtglKiiiILKgTORODÊi GENERAL PURPOSE & INDUSTRIAL POWER BIPOLAR EPITAXIAL BASE TRANSISTORS Continued •c v CBO v CEO Package ptot Tyipe NPN PNP hFE Î <C 1 VCE v CEsat ic 1 •b min (A) (V) (V) (W| 3 3 3 3 3 80 80 90 100 115


    OCR Scan     		PDF 2N5190 3055t bdw 51 52 SGS TIP 32 mj 3055 npn 2955t B0536 bd 911 mj 2955 npn bd 3055 TIP 3771

    tip 220

    Abstract: SGS TIP 32 BD NPN transistors 177 tip 31 mje370 transistor bd 126 To 126 TIP31 NPN Transistor diagram mje520 2n 4918 9 218
    Text: ¿t 7 SGS'THOMSON GMO SIMSi[LI(S?[MM(SS GENERAL PURPOSE & INDUSTRIAL POWER BIPOLAR TO 39 SOT 194 SOT 93 TOP 31 ISOWATT 218 TO 220 TO 3 ISOWATT 220 EPITAXIAL BASE TRANSISTORS Epitaxial base - Ic m : 1 -*• 3 A, Vc e o : 22 — 100 V Internal schem atic diagram s


    OCR Scan     		PDF

    T1P112

    Abstract: T1P111
    Text: TIP110, TIP111, TIP112 TIP115, TIP116, TIP117 TIP 110, 111, 112 TIP 115,116,117 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Darlington Amplifier and Low Speed Switching Applications DIM A B C D E F G H J K L M N MIN MAX 16.51


    OCR Scan     		PDF TIP110, TIP111, TIP112 TIP115, TIP116, TIP117 23633T4 T1P112 T1P111

    tip 115

    Abstract: No abstract text available
    Text: TIP110, TIP111, TIP112 TIP115, TIP116, TIP117 TIP 110, 111, 112 TIP 115,116,117 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Darlington Amplifier and Low Speed Switching Applications Ö ° Jo I Ü ¡H DIM A B C E F G H J K L


    OCR Scan     		PDF TIP110, TIP111, TIP112 TIP115, TIP116, TIP117 tip 115

    TIP NPN

    Abstract: TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 tip 115
    Text: TIP110, TIP111, TIP112 TIP115, TIP116, TIP117 TIP 110, 111, 112 TIP 115,116,117 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Darlington Amplifier and Low Speed Switching Applications DIM A B C D E F G H J K L U N MIN MAX 16.51


    OCR Scan     		PDF TIP110, TIP111, TIP112 TIP115, TIP116, TIP117 TIP NPN TIP110 TIP111 TIP115 TIP116 TIP117 tip 115

    BD633

    Abstract: BD637 darlington complementary power amplifier tip 142 BD635 tip 42 tip 3055 B0633 TIP 5530 TIP NPN tip 120
    Text: PRELIM IN ARY BD633, BD635, BD637 NPN EPIBASE POWER TRANSISTORS Amplifier Switch Complementary O utput Stages Complementary with BD 633, BD 635, BD 637 mechanical data TO-66P All dimensions are in mm absolute maximum ratings Collector-Emitter Voltage.


    OCR Scan     		PDF BD633, BD635, BD637 BD633 BD635 BD637 darlington complementary power amplifier tip 142 tip 42 tip 3055 B0633 TIP 5530 TIP NPN tip 120

    Bow94c

    Abstract: Bow93c box 53c IC SGS transistors b0334 SGS6388 BO 336 b0333 BOW93B SGSP222
    Text: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80


    OCR Scan     		PDF BUZ11 SGSP492 MTP3055A IRFP153 IRFP151 BUZ11S2 Bow94c Bow93c box 53c IC SGS transistors b0334 SGS6388 BO 336 b0333 BOW93B SGSP222

    B0738

    Abstract: b0734 TIP5530 B0736 TIP 5530 BD 147 TIP 3055 tip 125 tip 42 b073
    Text: PRELIMINARY BD734, BD736, BD738 PNP EPIBASE POWER TRANSISTORS H IG H G A IN G E R M A N IU M R E PLA C E M E N T • Car and Portable Radio • Complementary O utput Stages • Complementary w ith B D 733, B D 735, B D737 mechanical data TO-66P All d im e n s io n s a r e in m m


    OCR Scan     		PDF BD734, BD736, BD738 BD733, BD735, BD737 B0738 b0734 TIP5530 B0736 TIP 5530 BD 147 TIP 3055 tip 125 tip 42 b073

    GE10016

    Abstract: RCA8766D RCA9202C BUX37 RCA9203 GE10015 GE10020 GE10021 GE10022 RCA8766
    Text: Bipolar Power Transistors Darlington Power Transistors Continued hpE •C A T ype No. v CEO V JEDEC Package PT VCE V *C A w D evices have Integ ral Base S p e e d -u p D iode G E10 0 1 5 FAMILY (n -p -n ) • 4 GE10015 GE10016 GE10020 GE10021 GE10022 GE100&3


    OCR Scan     		PDF GE10015 GE10016 GE10020 T0-204AE/ GE10021 GE10022 GE100 RCA8766 RCA8766D RCA9202C BUX37 RCA9203

    ISKRA

    Abstract: TIP 2n3055 iskra by 325 BU208A BDX20 TIP NPN BU134 bdx18 me BDY56 2N3055
    Text: ISKRA ELECTRONICS INC SSE D • M8Í3M77 DODDUM 1 ■ - T - 93 -/5 " T - i 3 -¡3 Silicijevi mocnostni transistorji Power silicon transistors Tip/Type Polariteta Polarity Mcbo • Uceo l9op , ^tot hpE prl/at fT UcEsat A (MHz) (V) 15-120 2 10 0,6 *c . <V)


    OCR Scan     		PDF BDY24 BDY25 BDY74 2N3442 2N4348 2N3055 BDY56 2N3773 2N3772 BUX12 ISKRA TIP 2n3055 iskra by 325 BU208A BDX20 TIP NPN BU134 bdx18 me

    Bow94c

    Abstract: MTP3055A IRFZ22 mosfet b0334 BUZ11 SGSP222 BUZ10 STVHD90 SGS137 SGSD93G
    Text: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80


    OCR Scan     		PDF IRFZ20FI BUZ10 STLT29* BUZ11A SGSP382 SGSP482 BUZ11 BUZ11FI IRFZ42 SGSP492 Bow94c MTP3055A IRFZ22 mosfet b0334 SGSP222 STVHD90 SGS137 SGSD93G

    TIP308

    Abstract: woy transistor transistor tip 30c tip 30 tip 30c tip 147 TRANSISTOR motorola tip29 LSE 0405
    Text: MOT OR OL A SC 12E D 1 b3b7254 o a a s s i b s I XSTR S/ R F • 3 3 - Ö ? PNP ' NPN TIP29 T1P29A TIP29B TIP29C MOTOROLA SEMICONDUCTOR TECHNICAL DATA TIP30 TIP30A TIP30B TIP30C 1 A M PERE POWER TRANSISTORS COMPLEMENTARY SILICON COMPLEMENTARY SILICON PLASTIC


    OCR Scan     		PDF b3b7254 TIP29 T1P29A TIP29B TIP29C TIP30 TIP30A TIP30B TIP30C TIP308 woy transistor transistor tip 30c tip 30 tip 30c tip 147 TRANSISTOR motorola tip29 LSE 0405

    bdx340

    Abstract: Bow94c b0334 Bow93c b0333 BUZ10 d 6283 ic 2N6286 BUZ11 BUZ11S2
    Text: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO p»ot (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60


    OCR Scan     		PDF 2N6284 bdx340 Bow94c b0334 Bow93c b0333 BUZ10 d 6283 ic 2N6286 BUZ11 BUZ11S2

    bow94c

    Abstract: BOW93C SGSP591 MTP3055A SGSD93G SGSP381 SGSP461 SMD SJ 87 b0334 BUZ10
    Text: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80


    OCR Scan     		PDF IRF530FI SGSP361 SGSP461 BUZ21 BUZ25 IRF142 IRF542 IRF542FI IRF152 IRFP152 bow94c BOW93C SGSP591 MTP3055A SGSD93G SGSP381 SMD SJ 87 b0334 BUZ10

    TIP42C EQUIVALENT

    Abstract: TIP 122 transistor APPLICATION NOTES TIP 122 transistor tip 127 TRANSISTOR equivalent transistor tip 5530 TIP 122 transistor APPLICATION circuit tip 147 TRANSISTOR equivalent TIP41A equivalent TIP42A equivalent TRANSISTOR tip 122
    Text: TYPES TIP42, TIP42A, TIP42B, TIP42C P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS F O R P O W E R -A M P L IF IE R A N D H IG H -SP EED -SW ITCH IN G A P P L IC A T IO N S D E S IG N E D F O R C O M P L E M E N T A R Y U S E W ITH T IP 4 1 , T IP 4 1 A , TIP 4 1 B , T IP 41C


    OCR Scan     		PDF TIP42, TIP42A. TIP42B. TIP42C TIP41, TIP41A, TIP41B, TIP41C TIP42 TIP42A TIP42C EQUIVALENT TIP 122 transistor APPLICATION NOTES TIP 122 transistor tip 127 TRANSISTOR equivalent transistor tip 5530 TIP 122 transistor APPLICATION circuit tip 147 TRANSISTOR equivalent TIP41A equivalent TIP42A equivalent TRANSISTOR tip 122

    TIP 41 transistor

    Abstract: B0738 transistor tip 5530 e 3055 t tip 147 TRANSISTOR equivalent TRANSISTOR tip 127 texas instruments tip35 transistor tip 35c tip 127 TRANSISTOR equivalent TIP35C EQUIVALENT
    Text: TYPES TIP35, TIP35A, TIP35B, TIP35C N-P-N SINGLE-DIFFUSED M E S A SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH TIP36, TIP36A, TIP36B, TIP36C • 125 W at 25°C Case Temperature •


    OCR Scan     		PDF TIP35, TIP35A, TIP35B, TIP35C TIP36, TIP36A, TIP36B, TIP36C TIP35 TIP35A TIP 41 transistor B0738 transistor tip 5530 e 3055 t tip 147 TRANSISTOR equivalent TRANSISTOR tip 127 texas instruments tip35 transistor tip 35c tip 127 TRANSISTOR equivalent TIP35C EQUIVALENT

    TIP 41 transistor

    Abstract: tip 147 TRANSISTOR equivalent TIP 122 transistor tip 127 TRANSISTOR equivalent transistor tip 35c transistor BD 141 transistor tip 5530 transistor tip35c TIP 122 transistor APPLICATION NOTES TRANSISTOR bd 147
    Text: T Y P E S TIP 36, TIP36A, TIP36B, TIP36C P-N-P SINGLE-DIFFUSED M ESA SILICO N POWER TRANSISTORS F O R P O W E R -A M P L IF IE R A N D H IG H -SP EED -SW ITCH IN G A P P L IC A T IO N S D E S IG N E D F O R C O M P L E M E N T A R Y U S E W ITH T IP 3 5 , T IP 3 5 A , T IP 3 5 B , T IP 3 5 C


    OCR Scan     		PDF TIP36, TIP36A, TIP36B, TIP36C TIP35, TIP35A, TIP35B, TIP35C TIP36 TIP36A TIP 41 transistor tip 147 TRANSISTOR equivalent TIP 122 transistor tip 127 TRANSISTOR equivalent transistor tip 35c transistor BD 141 transistor tip 5530 transistor tip35c TIP 122 transistor APPLICATION NOTES TRANSISTOR bd 147