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    Untitled

    Abstract: No abstract text available
    Text: AU105 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)130 I(C) Max. (A)10 Absolute Max. Power Diss. (W)27 Maximum Operating Temp (øC)100õ I(CBO) Max. (A)500uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF AU105 time900n

    Untitled

    Abstract: No abstract text available
    Text: MG50D2DM1 Transistors Independent MOSFET Power Module Circuits Per Package2 V BR DSS (V)250 V(BR)GSS (V)20 I(D) Max. (A)50 Absolute Max. Power Diss. (W)300 Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case I(DSS) Min. (A) I(GSS) Max. (A)150n @V(GS) (V) (Test Condition)20


    Original     		PDF MG50D2DM1 time900n HL080HD5 Code4-310 NumberTR00400310

    Untitled

    Abstract: No abstract text available
    Text: NTC1868 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400öè V(BR)CBO (V) I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF NTC1868 time900n

    Untitled

    Abstract: No abstract text available
    Text: GSI550 Transistors N-Channel IGBT with Current Sensing V BR CES (V)500 V(BR)GES (V)25 I(C) Max. (A)80 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case700m td(on) Max (s) On time delay100n t(r) Max. (s) Rise time200nÂ


    Original     		PDF GSI550 Junc-Case700m delay100nà time200nà time900nà StyleTO-218 Code5-71 NumberTR00500071

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Capacitors - Aluminum SMD for High Temperature I INNOVAT AND TEC O L OGY 140 CRH N HN VISHAY BCcomponents O 19 62-2012 140 CRH SMD Aluminum Capacitor, RoHS Compliant Key Benefits • • • • • • High-temperature operation 125 ºC


    Original     		PDF AEC-Q200 MAL214099xxxE3 23-Apr-13 DESCRIBED23-Apr-13

    Untitled

    Abstract: No abstract text available
    Text: 78Q8392L/A03 Low Power Ethernet Coaxial Transceiver November 2008 DESCRIPTION FEATURES The 78Q8392L/A03 Ethernet Transceiver is a replacement for the SSI/TDK/Teridian 78Q8392L/A02 coax line transmitter/receiver. Only a single resistor value change is required for


    Original     		PDF 78Q8392L/A03 78Q8392L/A03 78Q8392L/A02 78Q8392L/A03. 10Base5 10Base2

    78Q8392L-CP

    Abstract: 27 MHZ rc transmitter teridian 78Q8392L aui isolation transformer circuit diagram of rc transmitter and receiver pulse transformer driver ic 78Q8392L-28CH heart monitor circuit trf 510 transistor 78Q8392L
    Text: 78Q8392L Low Power Ethernet Coaxial Transceiver DATA SHEET JULY 2005 DESCRIPTION FEATURES The 78Q8392L Ethernet Transceiver is a low power BiCMOS coax line transmitter/receiver. The device includes analog transmit and receive buffers, a 10 MHz on-board oscillator, timing logic for jabber and


    Original     		PDF 78Q8392L 78Q8392L 10Base5 10Base2 78Q8392L-CP 27 MHZ rc transmitter teridian 78Q8392L aui isolation transformer circuit diagram of rc transmitter and receiver pulse transformer driver ic 78Q8392L-28CH heart monitor circuit trf 510 transistor

    ICL 2025 audio amp

    Abstract: 73K224SL-IP STS Bv 1500 current transformers XX111X varistor 594 ph 250v ph 4148 zener diode pdf electra 171-3 MIDCOM 671-8001 75T2091-IH zener PH 4148
    Text: TDK Semiconductor Corporation HOW TO REACH US The Worldwide Web: www.tdksemiconductor.com TDK Semiconductor has had an active web site since 1995. We invite you to visit it often for new and updated product information. As new products are introduced and updates made to existing products, this information will


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: HGTG24N60D1 Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V)25 I(C) Max. (A)40 Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case1.0 Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.


    Original     		PDF HGTG24N60D1 delay100nà time150nà time900n

    78Q8392LA03

    Abstract: 78Q8392LA0328CH 78Q8392L 78Q8392L-28CH 78Q8392L-CP RR23 marking A03 MARK A03 A03 amplifier
    Text: 78Q8392L/A03 Low Power Ethernet Coaxial Transceiver November 2008 DESCRIPTION FEATURES The 78Q8392L/A03 Ethernet Transceiver is a replacement for the SSI/TDK/Teridian 78Q8392L/A02 coax line transmitter/receiver. Only a single resistor value change is required for


    Original     		PDF 78Q8392L/A03 78Q8392L/A03 78Q8392L/A02 78Q8392L/A03. 10Base5 10Base2 78Q8392LA03 78Q8392LA0328CH 78Q8392L 78Q8392L-28CH 78Q8392L-CP RR23 marking A03 MARK A03 A03 amplifier

    Untitled

    Abstract: No abstract text available
    Text: SJS Series Sector Antenna SJS515090-16 Innovative Technology for a Connected World 5.5 GHz DUAL-SLANT POLARIZED HIGH-PERFORMANCE 90° SECTOR The Laird Technologies SJS515090-16 5.5 GHz wide-band, dual-slant polarized 90° sector antenna covers frequencies from 5.15-5.85 GHz. Extremely low-side lobes, null fill below the


    Original     		PDF SJS515090-16 SJS515090-16 45deg) -45deg)

    FAG 32 diode

    Abstract: SHARP "lot code" FAG 28 diode diode FAG 50 300C LT1W92A FAG 32 FAG 50 diode
    Text: PREPARED BY: @ @ S P E C N o . DG–95Y036 DATE : DATE : APPROVED BY FILE No. %24.~97J sHA~p ISSUE PAGE ELECTRONIC COMPONENTS GROUP 22,1995 6 Pages REPRESENTATIVE DIVISION SHARP CORPORATION XM. Nov. OPTO–ELECTRONIC DEVICES DIV. b#3t/fls - SPECIFICATION I


    Original     		PDF 95Y036 LT1W92A FAG 32 diode SHARP "lot code" FAG 28 diode diode FAG 50 300C LT1W92A FAG 32 FAG 50 diode

    APP20

    Abstract: No abstract text available
    Text: I I APP20VED 3Y: I ELECTRONIC COMPONENTS GIOU? DATE : I I PAGE 8 Pages L REPRESENTATIVE DIVISION r ‘pEc’F’cAT’ON DE’/ICI [ S?ECIFIC.\TION FOR OPTO–ELECTRONIC ‘EVICES ‘lv\ “- Ga? Yello7-grseen Chip LZD Device YODEL ~0. LTLE9?.A ! 1. This specification sheets include the cance~ts under the ccpyright of Sharz Corporation (“Sharp” .


    Original     		PDF APP20VED Time90 120sec at30C, APP20

    Untitled

    Abstract: No abstract text available
    Text: NTC1867 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)250öè V(BR)CBO (V) I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF NTC1867 time900n

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS LH 3344-QO DOUBLE HETERO JUNCTION LH 3364-MO DOUBLE HETERO JUNCTION Hyper-Red GaAIAs T1 3mm LED Lamp Package Dimensions in Inches (mm) LED Lamps Surface not Flat 232 (5.9) FEATURES * T1 (3mm) Package * Double Hetero Junction Technology * Choice of Diffused Lens-LH 3364 or Red


    OCR Scan     		PDF 3344-QO 3364-MO LH3344, LH3344 LH3364 time-10% time-90% 053b32b

    Untitled

    Abstract: No abstract text available
    Text: OTDK. 78Q8392L Low Power Ethernet Coaxial Transceiver TDK SEMICONDUCTOR CORP. February 1998 DESCRIPTION FEATURES The 78Q8392L Ethernet Transceiver is a low power BiCMOS coax line transmitter/receiver. The device includes analog transmit and receive buffers, a 10


    OCR Scan     		PDF 78Q8392L 78Q8392L 10Base5 10Base2 28-Pin 78Q8392L-28CH

    33642P

    Abstract: No abstract text available
    Text: 44E D SIEMENS CMPNTSi OPTO SIEMENS • fla3b32b 0005441 5 BISIEX' LH 3343-PO SINGLE HETRO JUNCTION LH 3363-KO DOUBLE HETRO JUNCTION LH 3344-QO DOUBLE HETRO JUNCTION LH 3364-LO SINGLE HETRO JUNCTION HYPER RED GaAIAs T1 3mm LED LAMP T-MH3 P ack ag e Dim ensions in Inches (mm)


    OCR Scan     		PDF fla3b32b 3343-PO 3363-KO 3344-QO 3364-LO LH3363, LH3363 LH3364, LH3364 LH3343/3363/3344/3364 33642P

    XCKM

    Abstract: xck-m
    Text: SIEMENS " • * LH -MO DOUBLE HETERO JU N C T IO N *^ DOUBLE HETEBO JUNCTION 834 1-00 3364 Hyper-Red GaAIAs T1 3mm LED Lamp Package Dimensions in Inches (mm) ~ J 024 (0 6 ) 016 (0 4 ) - tF M —^ 028 (07 ) mksi 016 (0 .4 ) *«(5 2) I- .- « - ’« » »


    OCR Scan     		PDF Lens-LH3364 LH3343/3344 LH3363/3364 3344-QO 3364-MO IH3344, time-10% time-90% LH3344/3364 XCKM xck-m

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS LH 5424-QO DOUBLE HETERO JUNCTION LH 5464-LO DOUBLE HETERO JUNCTION HYPER RED GaAIAs T1% 5mm LED LAMP Maximum Ratings Operating Temperature Range (T0P) . -55°C to + 100°C Storage Temperature Range (Tstg) . -55°C to +100°C


    OCR Scan     		PDF 5424-QO 5464-LO time-10% time-90% LH5424/5464 5424-QO 5464-LO LH5424) LH5464) 23b32b

    Led 5mm 35 mA 3V

    Abstract: No abstract text available
    Text: SIEMENS LH 5424-QO DOUBLE HETERO JUNCTION LH 5464-LO DOUBLE HETERO JUNCTION HYPER RED GaAIAs T1% 5mm LED LAMP Maximum Ratings Operating Temperature Range (T0P) . -55°C to + 100°C Storage Temperature Range (Tstg) . -55°C to +100°C


    OCR Scan     		PDF 5424-QO 5464-LO T13/4 T13/4 time-10% time-90% LH5424/5464 LH5424) LH5464) 00D6454 Led 5mm 35 mA 3V

    hetero

    Abstract: No abstract text available
    Text: SIEMENS LH 3344 DOUBLE HETERO JUNCTION LH 3364 DOUBLE HETERO JUNCTION Hyper-Red GaAIAs T1 3 mm LED Lamp Dimensions in inches (mm) GEX6717 FEATURES • Lens -LH3344: rad, dear - LH3364: rad diffused • Double heterojunction in GaAIAs technology • Especially high luminous Intensity


    OCR Scan     		PDF GEX6717 -LH3344: LH3364: 100mA, time-10% time-90% 3344-QT 3344-R LH3344-S LH3344-T hetero

    3364-MQ

    Abstract: LH 3364-MQ
    Text: SIEMENS LH 3344-QO DOUBLE HETERO JUNCTION LH 3364-MO DOUBLE HETERO JUNCTION Hyper-Red GaAIAs T1 3mm LED Lamp Package Dimensions in Inches (mm) LED Lamps Surface not Flat 232 (5.9) FEATURES • T1 (3mm) Package * Double Hetero Junction Technology * Choice of Diffused Lens-LH 3364 or Red


    OCR Scan     		PDF 3344-QO 3364-MO Lens-LH3364 LH3344 LH3364 10rnA) time-10% time-90% 3364-MQ LH 3364-MQ

    LH 3A 05

    Abstract: No abstract text available
    Text: bOE D • SIEMENS 3 8535bOS 004b253 Ibi « S I E Û LH 3344-QO DOUBLE HETERO JUNCTION LH 3364-MO DOUBLE HETERO JUNCTION Hyper-Red GaAIAs T1 3mm LED Lamp SIEMENS AKTIENGESELLSCHAF Package Dimensions in Inches (mm) <2M ) T 204 ( 5 2 ) _ 1 7 7 (4 5 ) 0 3 1 (0 8 )


    OCR Scan     		PDF 8535bOS 004b253 3344-QO 3364-MO LH3343/3344 LH3363/3364 3364-MO LH3344, time-10% LH 3A 05

    AT27C256R25JI

    Abstract: AT27C258R-20KI 27C256R AT27C256 AT27C256R AT27C256R15LC AT27C256R-12DC AT27C256R20JI AT27C256R-25DM AT27C256R12LI
    Text: ATMEL CORP 43E D B 1G74177 ÖD017U 3 BATM AT27C256R Features • Low Power CMOS Operation 100 nA max. Standby 20 mA max. Active at 5 MHz • Fast Read Access. Time-90ns • Wide Selection of JEDEC Standard Packages Including OTP 28-Lead 600 mil Cerdlp and OTP Plastic DIP or SOIC


    OCR Scan     		PDF 0D01711 AT27C256R -90ns 28-Lead 32-Pad 32-Lead 200mA AT27C256 Military/883C 28DW6 AT27C256R25JI AT27C258R-20KI 27C256R AT27C256R15LC AT27C256R-12DC AT27C256R20JI AT27C256R-25DM AT27C256R12LI