tic 263a
Abstract: seven wonders TRW speech
Text: SSI 263A Phoneme Speech Synthesizer cmmâiskms INNOVATORS DRS IN lirINTEGRATION Data Sheet D ESCRIPTION The SSI 2 6 3 A is a v e rs a tile , h ig h -q u a lity , phonem eba sed s pe ech s y n th e s iz e r c irc u it c o n ta in e d in a s in g le m o n o lith ic CM O S in te g ra te d c irc u it. It is d e s ig n e d to
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Untitled
Abstract: No abstract text available
Text: HUF76445P3, HUF76445S3S in te g r a i D ata S hee t O ctob er 1999 75A, 60V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging F i le N u m b e r u m 4 6 7 6 .3 a ffc " Features JE D EC TO -220AB JE D EC TO -263AB • Ultra Low On-Resistance
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HUF76445P3,
HUF76445S3S
-220AB
-263AB
0065Q,
0075ft,
HUF76445P3
F76445P3
F76445S3S
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338A
Abstract: No abstract text available
Text: in t e r r ii HUF76633P3, HUF76633S3S D a ta S h e e t O c to b e r 1 9 9 9 4 6 9 3 .3 U rlta O ^j 38A, 100V, 0.036 Ohm, N-Channel, Logic LeveI UltraFET Power MOSFET Packaging F ile N u m b e r Features JE DEC TO -263AB JEDEC TO -220AB • Ultra Low On-Resistance
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HUF76633P3,
HUF76633S3S
-220AB
-263AB
HUF76633P3
F76633P3
F76633S3S
-263AB
338A
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Untitled
Abstract: No abstract text available
Text: N E W PRODUCT N E W PRODUCT N E W PRODUCT MBRB2535CT THRU MBRB2560CT SCHOTTKY RECTIFIER Reverse Voltage - 35 to 60 Volts Forward Current - 30.0 Amperes FEATURES TO-263AB ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Dual rectifier construction, positive center-tap
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MBRB2535CT
MBRB2560CT
O-263AB
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70n06 to 247
Abstract: RFP70N06 70n06
Text: in tefsil RFG70N06, RFP70N06, RF1S70N06SM D a ta S h e e t J u ly 1999 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs Features Formerly developmental type TA49007. Ordering Information PACK AG E RFG70N06 TO -247 RFG70N06 TO -220AB R FP70N 06 RF1S70N06SM TO -263AB
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RFG70N06,
RFP70N06,
RF1S70N06SM
TA49007.
RF1S70N06SM
AN7260.
70n06 to 247
RFP70N06
70n06
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Untitled
Abstract: No abstract text available
Text: ¡Tî HARRIS HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS S E M I C O N D U C T O R 14A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs June 1995 Packages Features JEDEC TO-220AB • Lo gic Level G ate D rive EMITTER COLLECTOR • In ternal V oltag e C lam p
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HGTP14N36G3VL,
HGT1S14N36G3VL,
HGT1S14N36G3VLS
O-220AB
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K200707
Abstract: d4454 L218671
Text: \4M < ► General Purpose Fuses @ DIN Fuse Accessories D-type DIAZED D Fuse System 2 - 200 A, 500 V, 690 V Line protection fuses gL-gG IEC 269-3-1 DIN VDE 0636 Part 31 DIN VDE 0636 Part 301 Dim ensions are stip u la te d in the fo llo w in g regulations:
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Untitled
Abstract: No abstract text available
Text: HUF75321P3, HUF75321S3S interrii D a ta S h e e t 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF75321P3,
HUF75321S3S
AN7260.
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60p03
Abstract: PLIC
Text: f jì RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM HARRIS S E M I C O N D U C T O R 60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages • 60A, 30V JE DEC S TYLE TO -247 SOURCE ’ rDS ON = 0.027S2 DRAIN • Temperature Compensating PSPICE Model
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RFG60P03,
RFP60P03,
RF1S60P03,
RF1S60P03SM
027S2
RF1S60P03
RF1S60P03SM
1e-30
60p03
PLIC
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F1S30P05
Abstract: No abstract text available
Text: RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM fB l H A R R IS u u semiconductor 30A, 50V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JE D EC STYLE TO -247 • 30A .50V SOURCE = 0.0651J • Temperature Compensating PSPICE Model
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RFG30P05,
RFP30P05,
RF1S30P05,
RF1S30P05SM
0651J
RF1S30P05SM
F1S30P05
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F40N10LE
Abstract: 40n10le F40N1OLE F1S40N FP40N10L F40N10 F*N10L F40N rfp40n
Text: ÜB H A R R I S RFG40N10LE, RFP40N10LE, vmj se», co. »uc, o• RF1S40N10LE, RF1S40N10LESM 40A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel, Enhancement-Mode Power MOSFETs D ece m b e r 1995 Features Packages JE D EC S TYLE TO -247 • 4 0 A ,1 0 0 V
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RFG40N10LE,
RFP40N10LE,
RF1S40N10LE,
RF1S40N10LESM
33e-3
00e-5)
38e-6)
F40N10LE
40n10le
F40N1OLE
F1S40N
FP40N10L
F40N10
F*N10L
F40N
rfp40n
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TIC 106 PSPICE
Abstract: FP23N06L tic 263a FP23N06
Text: RFP23N06LE, RF1S23N06LE, RF1S23N06LESM HARRIS S E M I C O N D U C T O R 23A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs D ece m b e r 1995 Features Packaging JE D E C T O -220A B • 23 A ,60V • rDS ON = 0.065i2
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RFP23N06LE,
RF1S23N06LE,
RF1S23N06LESM
-220A
065i2
-262A
99e-4
71e-12)
27e-2
73e-5)
TIC 106 PSPICE
FP23N06L
tic 263a
FP23N06
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30N06LE
Abstract: 30n06l s1am 30n06 F30N06LE
Text: fT| HARRIS RFP30N06LE, RF1S30N06LE, S E ",O N O U C T O R RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs J u ly 1 9 9 5 Features Packages JE D EC T 0 -2 2 0 A B • 3 0 A ,6 0 V • r D S O N | =
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RFP30N06LE,
RF1S30N06LE,
RF1S30N06LESM
-262A
RF1S30N06LE
RF1S30N06LESM
576e-4
591e-9
1e-30
30N06LE
30n06l
s1am
30n06
F30N06LE
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b527
Abstract: tic 263a NDP506A
Text: National Semiconductor” M a y 19 95 NDP506A / NDP506B NDB506A / NDB506B N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field • 26 and 24A, 60V. RDS 0N| = 0.05 and 0.06J2. effect transistors are produced using National's
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NDP506A
NDP506B
NDB506A
NDB506B
bSD113D
b527
tic 263a
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ATM machine using microcontroller
Abstract: AT89SC168A
Text: Features * Compatible with MCS-51 products • On-chip Flash Program Memory - Endurance: 125,000 Write/Erase Cycles * On-chip EEPROM Data Memory - Endurance: 125,000 Write/Erase Cycles • 512 x 8-bit RAM • ISO 7816 I/O Port * Random Word Generator • Two 16-bit Timers
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MCS-51TM
16-bit
AT89SCXXXXA
AT89SC
1263AS--
ATM machine using microcontroller
AT89SC168A
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40N10
Abstract: RFP40N1Q F1S40N
Text: RFG40N10, RFP40N10, RF1S40N10SM î n t e f s il D ata S h e e t J u ly 1999 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives
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RFG40N10,
RFP40N10,
RF1S40N10SM
TA9846
AN7260.
40N10
RFP40N1Q
F1S40N
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f3205
Abstract: No abstract text available
Text: interrii HRF3205, HRF3205S D a ta S h e e t 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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HRF3205,
HRF3205S
f3205
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hcpl261
Abstract: tic 263a hcpl466
Text: W hnW H E W L E T T m LEM P a c k a r d HCMOS Compatible, High CMR, 10 MBd Optocouplers Technical Data HCPL-261A HCPL-263A HCPL-261N HCPL-263N Features • HCMOS/LSTTL/TTL Performance Compatible • 1000 V/|is Minimum Common Mode Rejection CMR at VCM = 50 V (HCPL261A Family) and 15 kV/|is
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HCPL-261A
HCPL-263A
HCPL-261N
HCPL-263N
HCPL-061A
HCPL-063A
HCPL-061N
HCPL-063N
HCPL261A
hcpl261
tic 263a
hcpl466
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12n60u
Abstract: sta 750 tic 263a
Text: , IGBT with Diode Combi Pack G series with high gain type VCES .Tjm= 1:S0oO ► New : >• >>>> ► ► ► ► ► IXGP IXGH IXGH IXGH IXGH IXGH IXGH IXGA IXGP IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGA IXGP IXGH IXGH
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Untitled
Abstract: No abstract text available
Text: mtefsil RFG30P05, RFP30P05, RF1S30P05SM D a ta S h e e t J u ly 1 9 9 9 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs 243 $.4 Features • 30A, 50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives
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RFG30P05,
RFP30P05,
RF1S30P05SM
TA09834.
RFG30P0S,
RF1S30P05SM
AN7260.
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rr180
Abstract: 75337 75337S 75337P
Text: in te rrii HUF75337G3, HUF75337P3, HUF75337S3S J u n e 1999 D a ta S h e e t 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF75337G3,
HUF75337P3,
HUF75337S3S
HUF75337S3S
AN7260.
rr180
75337
75337S
75337P
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75339p
Abstract: 75339g TA75339 263A tic 263a 75339S F75339P3
Text: in te fsil HUF75339G3, HUF75339P3, HUF75339S3S D a ta S h e e t J u n e 1999 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF75339G3,
HUF75339P3,
HUF75339S3S
HUF7S339G3,
HUF75339S3S
AN7260.
75339p
75339g
TA75339
263A
tic 263a
75339S
F75339P3
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Untitled
Abstract: No abstract text available
Text: F A IR C H IL D S E M IC O N D U C T O R Ju|y " 7 tm N D P 6030 / N D B 6030 N -C h a n n e l E n h a n c e m e n t M o d e F ield E ffe c t T ra n s is to r General Description These N -C h a n n e l Features enhancem ent m ode power fie ld e ffe c t • 46
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NDP6030.
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76143S
Abstract: 76143P
Text: interdi HUF76143P3, HUF76143S3S D ata S h e e t 75A, 30V, 0.0055 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF76143P3,
HUF76143S3S
HUF76143S3S
76143S
76143P
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