F1S30P05 Search Results

F1S30P05 Price and Stock

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Rochester Electronics LLC RF1S30P05 MOSFET P-CH 50V 30A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RF1S30P05	Bulk	1,040		342	1 - 10 - 100 - 1000 $0.88 10000 $0.88	Buy Now
Renesas Electronics Corporation RF1S30P05 - Bulk (Alt: RF1S30P05)
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Avnet Americas	RF1S30P05	Bulk		4 Weeks	411	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Renesas Electronics Corporation RF1S30P05SM POWER FIELD-EFFECT TRANSISTOR, 30A I(D), 50V, 0.065OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB - Bulk (Alt: RF1S30P05SM)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	RF1S30P05SM	Bulk		4 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Fairchild Semiconductor Corporation RF1S30P05SM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	RF1S30P05SM		154			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Harris Semiconductor RF1S30P05SM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	RF1S30P05SM		50			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics	RF1S30P05SM		92		1	1 $0.8874 10 $0.8874 100 $0.8342 1000 $0.7543 10000 $0.7543	Buy Now

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F1S30P05 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
f1s30p05 Abstract: RF1S30P05SM RF1S30P05SM9A RFG30P05 RFP30P05 TB334 Text: RFG30P05, RFP30P05, F1S30P05SM Data Sheet July 1999 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs • 30A, 50V Formerly developmental type TA09834. Ordering Information PACKAGE 2436.4 Features These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses	Original	PDF	RFG30P05, RFP30P05, RF1S30P05SM TA09834. f1s30p05 RF1S30P05SM RF1S30P05SM9A RFG30P05 RFP30P05 TB334
F1S30P05 Abstract: RFP30P05 RF1S30P05SM RF1S30P05SM9A RFG30P05 TB334 Text: RFG30P05, RFP30P05, F1S30P05SM Data Sheet January 2002 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs Features • 30A, 50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives	Original	PDF	RFG30P05, RFP30P05, RF1S30P05SM TA09834. F1S30P05 RFP30P05 RF1S30P05SM RF1S30P05SM9A RFG30P05 TB334
65e9 transistor Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 \| \| ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12	Original	PDF	1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
f1s30p05 Abstract: RS223 RFP30P05 TA09834 RF1S30P05 RF1S30P05SM RFG30P05 rfp30p05 harris Text: RFG30P05, RFP30P05, F1S30P05, F1S30P05SM S E M I C O N D U C T O R 30A, 50V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features • • • • • • Packages JEDEC STYLE TO-247 30A, 50V rDS ON = 0.065Ω Temperature Compensating PSPICE Model	Original	PDF	RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM O-247 175oC f1s30p05 RS223 RFP30P05 TA09834 RF1S30P05 RF1S30P05SM RFG30P05 rfp30p05 harris
RFP30P Abstract: No abstract text available Text: RFG30P05, RFP30P05, F1S30P05SM Data Sheet July 1999 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs [ /Title RFG3 0P05, RFP30 P05, RF1S3 0P05S M /Subject (30A, 50V, 0.065 Ohm, PChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, PChannel Power	Original	PDF	RFG30P05, RFP30P05, RF1S30P05SM RFP30 0P05S O220AB RFP30P
F1S30P05 Abstract: No abstract text available Text: RFG30P05, RFP30P05, F1S30P05, F1S30P05SM fB l H A R R IS u u semiconductor 30A, 50V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JE D EC STYLE TO -247 • 30A .50V SOURCE = 0.0651J • Temperature Compensating PSPICE Model	OCR Scan	PDF	RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM 0651J RF1S30P05SM F1S30P05
Untitled Abstract: No abstract text available Text: P *3 3 S RFG30P05, RFP30P05, F1S30P05, F1S30P05SM 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 30A, 50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses fea ture sizes approaching those of LSI circuits, gives optimum	OCR Scan	PDF	RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM 0-065i2 Operati85e-9 81e-8) 23e-1 97e-3 37e-5)
Untitled Abstract: No abstract text available Text: mtefsil RFG30P05, RFP30P05, F1S30P05SM D a ta S h e e t J u ly 1 9 9 9 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs 243 $.4 Features • 30A, 50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives	OCR Scan	PDF	RFG30P05, RFP30P05, RF1S30P05SM TA09834. RFG30P0S, RF1S30P05SM AN7260.