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    TIC 126 M Search Results

    TIC 126 M Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    EVAL-ADN4650EB1Z Analog Devices ADN4650 Evaluation Board Visit Analog Devices Buy
    ADN4651BRSZ-RL7 Analog Devices 3.75kVrms LVDS Iso 600Mbps Dua Visit Analog Devices Buy
    ADN4692EBRZ-RL7 Analog Devices MLVDS Xcvr,FD,100M Type 1 Rx,E Visit Analog Devices Buy
    ADN4695EBRZ Analog Devices MLVDS Xcvr,FD,100M Type 2 Rx,E Visit Analog Devices Buy
    EVAL-ADN4652EB1Z Analog Devices ADN4652 SOIC-W Eval Board Visit Analog Devices Buy
    ADN4651BRSZ Analog Devices 3.75kVrms LVDS Iso 600Mbps Dua Visit Analog Devices Buy
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    TIC 126 M Price and Stock

    Bourns Inc TIC126M-S

    SCR 600V 12A TO220
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    DigiKey TIC126M-S Tube
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    Avnet Abacus TIC126M-S 143 Weeks 15,000
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    Texas Instruments TIC126M

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    Bristol Electronics TIC126M 153
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    TIC126M 9
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    TIC126M 10
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    Quest Components TIC126M 7
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    Component Electronics, Inc TIC126M 41
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    Bourns Inc TIC126MS

    SILICON CONTROLLED RECTIFIER Silicon Controlled Rectifier, 7500mA I(T), 600V V(DRM)
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    ComSIT USA TIC126MS 5,700
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    TIC 126 M Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TIC126M Unknown Thyristor Original PDF
    TIC126M Unknown SILICON CONTROLLED RECTIFIERS Original PDF
    TIC126M Power Innovations SILICON CONTROLLED RECTIFIERS Original PDF
    TIC126M Power Innovations SILICON CONTROLLED RECTIFIERS Original PDF
    TIC126M Teccor Electronics Cross Reference Data to Teccor Part Numbers (See datasheet appendix) Original PDF
    TIC126M Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    TIC126M Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    TIC126M Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    TIC126M Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    TIC126M Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    TIC126M Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    TIC126M Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    TIC126M Texas Instruments 600 V, 7.5 A, PNP silicon reverse-blocking triode thyristor Scan PDF
    TIC126M-S Bourns SCR 600V 12A Original PDF

    TIC 126 M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    m922

    Abstract: m904 M921 m927 m917C M3910
    Text: .620 MAX. P art Number 1.25 MAX. .175 MAX. .374 MAX. Des ign V oltage A mps MS C P L ife Hours F ilament T ype C M914 C M926 4.0 4.0 .90 1.80 3.5 7.5 50 50 C -6 C -2R C M903 C M908 C M909 C M927 6.0 6.0 6.0 6.0 1.00 1.50 .62 1.20 6.0 12.0 3.8 8.0 200 50 30


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    PDF M1425 M3909 M3910 m922 m904 M921 m927 m917C M3910

    S12642

    Abstract: S12642-0404PA-50 L10941-01 S12642-0404PB-50 HAMAMATSU L9181
    Text: 2014 02 COVER STORY PAGE 2 Life Photonics – Innovative Solutions for Global Challenges OPTO-SEMICONDUCTOR PRODUCTS PAGE 10 Maximise MPPC performance with new MPPC modules ELECTRON TUBE PRODUCTS PAGE 14 Flat panel type PMT with high collection efficiency, H12700


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    PDF H12700 C3077-80 S12642 S12642-0404PA-50 L10941-01 S12642-0404PB-50 HAMAMATSU L9181

    Untitled

    Abstract: No abstract text available
    Text: BD375/377/379 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS T O -126 • C om plem ent to BD376, BD378 and BD380 respectively ABSOLUTE MAXIMUM RATINGS C h a ra c te ris tic C ollector Base Voltage C ollector Em itter Voltage


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    PDF BD375/377/379 BD376, BD378 BD380 BD375 BD377 BD379

    Untitled

    Abstract: No abstract text available
    Text: KSC2688 NPN EPITAXIAL SILICON TRANSISTOR COLOR TV CHROMA OUTPUT VIDEO OUTPUT T O -126 ABSOLUTE MAXIMUM RATINGS R a tin g U n it C ollector- Base Voltage C h a ra c te ris tic VcBO S ym bol 300 V C ollector- E m itter Voltage V ceo 300 V Em itter- Base Voltage


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    PDF KSC2688

    Untitled

    Abstract: No abstract text available
    Text: UNCONTROLLED DOCUMENT REV, A 03,20 [ 00 ,126 ] E.C.N. PART NUMBER REV. S S L —L X 3 0 4 4 IG C A NUMBER AND REVISION COMMENTS E.C.N. #10BRDR. & 4 .1 1 .0 1 02.90 [00.114] ELEC TRO -O P TIC AL CHARACTERISTICS Ta = 2 5 T PARAMET[R lf= 2 0 m A TYP PEAK WAVE[ENGTH


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    PDF LX3044IGC 10OjuA MAX65nm

    ksd transistor

    Abstract: No abstract text available
    Text: KSB744/744A PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • C om plem ent to KSD 794/KSD 794A T O -126 ABSOLUTE MAXIMUM RATINGS R a tin g U n it C ollector Base Voltage C h a ra c te ris tic VcBO S ym bol -70 V C ollector Em itter Voltage : KSB744


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    PDF KSB744/744A 794/KSD KSB744 KSB744A ksd transistor

    Untitled

    Abstract: No abstract text available
    Text: KSD882 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING T O -126 • C om plem ent to KSB772 ABSOLUTE MAXIMUM RATINGS C h a ra c te ris tic Sym bol R a tin g U n it C ollector- Base Voltage V cB O 40 V C ollector-E m itter Voltage


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    PDF KSD882 KSB772

    Untitled

    Abstract: No abstract text available
    Text: KSD1691 NPN EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT TO -126 • HIGH POW ER D ISSIPATIO N : Pc = 1 .3W T a =25°C • C om plem entary to K S B 1 151 ABSOLUTE MAXIMUM RATINGS R a tin g U n it C ollector- Base Voltage C h a ra c te ris tic


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    PDF KSD1691

    N82S126F

    Abstract: N82S129N N82S129F N82S126N 82S129 N82S126 itt 129 ane fuse led matrix 32X32 82S126
    Text: S ig n e tic s Memories - Bipolar Proms N82S126, N82S129 - 1024 Bit Field Programmable Bipolar Prom C O N N E C T IO N D IA G R A M G E N E R A L D E S C R IP TIO N The 82S 126 and 82S 129 are fie ld program m able, w hich means th a t custom patterns are im m e diately available by


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    PDF N82S126, N82S129 82S126 82S129 N82S126F N82S129N N82S129F N82S126N N82S126 itt 129 ane fuse led matrix 32X32

    to126

    Abstract: to-126 TDA1415 To 126 boitier to 126
    Text: & « '/ / TO-126 CB-16 Voltage regulators (continued) Régulateurs de tension (suite) A p p lic a tio n s Type S u ffix Case P rin c ip a l ch a ra c te ris tic s A p p lic a tio n s Type S u ffix e B o îtie r C a ra cté ristiq u e s p rin c ip a le s


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    PDF O-126 CB-16) TDA1415 O-126 to126 to-126 TDA1415 To 126 boitier to 126

    3DD13001

    Abstract: No abstract text available
    Text: m c c TO -126 P la s tic -E n c a p s u la te T ra n s is to rs ^ 3DD13001 T R A N S IS T O R N P N FEATU R E S I p p é r ^ e tM jà r tlo n Pcm ; . 1W (Tamb=25"C) •eanireiii^ -base voltage V(BR)côo: 600 V &tyfÿniQtig.-sfttf s to ra g e ju n c tio n te m p e ra tu re ra n g e


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    PDF 3DD13001

    TCA900

    Abstract: TCA 160 IL444 TEA 1112 A g0940 tca910 TCA 200
    Text: TCA 900 LINEAR INTEGRATED CIRCUITS T C A 910 PRELIMINARY DATA MOTOR SPEED REGULATORS T he T C A 900 and T C A 910 are lin e a r in te g ra te d c irc u its in Jedec TO -126 p la s tic p a cka g e . T he y are d e s ig n e d fo r use as sp e e d re g u la to rs fo r DC m o to rs o f re c o rd


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    PDF O-126 TCA900 TCA 160 IL444 TEA 1112 A g0940 tca910 TCA 200

    B66276-B1011-T1

    Abstract: tic 122 tic 272 B66274-B1012-T1 B66274B1002T1 B66278-B1001-T1 B66278 B66278-B1002-T1 B66278B2001 B66272J1013T1
    Text: EC Cores Example of an assem bly set Yoke a - Sheet-steel screw FEK 0 0 r-X Mounting dimensions of the assembly set mm C o r e ty p e L e n g th x w id th x h e ig h t 1'f E C 35 47 E C 41 5 2 .5 x 4 7 , 5 x 4 2 4 7 .5 x 4 2 x 44


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    PDF B66278-B1001-T1 B66278-B1002-T1 B66278-B1011-T1 B66278-B2001 B66278-B2002 B66276-B1011-T1 tic 122 tic 272 B66274-B1012-T1 B66274B1002T1 B66278 B66278B2001 B66272J1013T1

    TIC 160

    Abstract: thyristor tic 126 2N5064 AGT Thyristor tic 120 TIC64 TIC 160 D TIC45 AGK TIC106B Thyristor TO39
    Text: TYPES 2N5060 THRU 2N5064, TIC60 THRU TIC64 P-IIM-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS S IL E C T t T H Y R IS T O R S * 8 0 0 m A DC • 30 thru 20 0 V O LT S mechanical data These thyristors are encapsulated in a plastic compound specifically designed for this purpose, using a highly


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    PDF 2N5060 2N5064, TIC60 TIC64 L-STD-202C O-66P TIC 160 thyristor tic 126 2N5064 AGT Thyristor tic 120 TIC 160 D TIC45 AGK TIC106B Thyristor TO39

    Untitled

    Abstract: No abstract text available
    Text: DO-35 Zener Diodes 500 mW E le c tric a l C h a ra c te ris tic s (A t Ta=25°C, U n le ss O th e rw is e S p e cifie d ) Type No. min V ZT r ZT at lZT at lZT nom max (V) 'zt r ZK 'z k a t !z k max max (Ohm) (mA) (Ohm) (mA) Temp. Coeff. of 1 Zener Voltage


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    PDF DO-35 RD10EB RD10EB1 RD10EB2 RD10EB3 23A33T4

    ERA38

    Abstract: irsy
    Text: E R A 38 o.5A Outline Drawings FAST RECOVERY DIODE : Features • iti-a u : Marking S u p e r high speed sw itch in g • f f i ' J 5 m m l i 7 f £ » « ¡A U ltra sm all p a c k a g e . * 7 —□ — K : Ö C o lo r code : W hite Possible fo r 5 m m pitch a u to m a tic insertion


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    PDF ERA38 irsy

    bu126

    Abstract: No abstract text available
    Text: BU 126 N P N S IL IC O N T R A N S IS T O R , T R IP L E D IF F U S E D M E S A T R A N S IS T O R S I L I C I U M N P N , M E S A T R IP L E D IF F U S E P R E L IM IN A R Y D A T A N O T IC E P R E L / M I N A I R E T h e BU 1 2 6 ty p e is a fast high voltage transis­


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    PDF 15/us CB-19 bu126

    Untitled

    Abstract: No abstract text available
    Text: SANKEN ELECTRIC CO LTD 5SE J> • SLA4030 7 ^ 0 7 4 1 D001204 04b « S A K J Silicon NPN Triple Diffused Planar Darlington IMaximum Ratings Hem Ta = 25°C IÍWSÍ Symbol Collector-to-B ase Voltage V CBO 120 V Collector-to-E m itter Voltage VC E O 100 V Em itter-to-Base Voltage


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    PDF SLA4030 D001204 STA300 STA400 45max

    UFT40130

    Abstract: UFT40140 UFT40150
    Text: Ultra Fast Recovery Module FT40130 - ¥ Baseplate A=Common Anode V Baseplate Common Cathode U h *" 1 t H 1 F 1 “ I- u — .r r -U Í- * n ° N | N ° Baseplate D=Doubler UFT40150 Dim . Inches Min. A B c E F G H N Q R U V W Max. — 3.630 0.700 0.800


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    PDF UFT401 UFT40130* UFT40140* UFT40150* UFT40130 UFT40140 UFT40150

    Untitled

    Abstract: No abstract text available
    Text: 2SC1212, 2SC1212A Silicon NPN Epitaxial HITACHI Application Low frequency power amplifier Outline T O -126 MOD 1 IP 1 1. Em itter 2. Collector 3. Base 1 3 Absolute Maximum Ratings Ta 25°C = Ratings Item Symbol 2SC1212 2SC1212A Unit Collector to base voltage


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    PDF 2SC1212, 2SC1212A 2SC1212 2SC75 2SC1212 2SC1212A

    Untitled

    Abstract: No abstract text available
    Text: b 4E D • S ö 7 bbSl GGOVASÌ 301 «MXM yi/i/ixi/i/i 19-0096; Rev 0; 11/92 Low-Noise, Precision Op Amp G e n e ra / D e s c rip tio n The Maxim LT1007 operational amplifier features low-noise, ±15V performance: 2.5nV/VHz wideband noise, 1/f com er frequency of 2Hz, and 60nVp-p 0.1 Hz to 10Hz noise.


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    PDF LT1007 60nVp-p 130dB LT1007â 600S2 MAX427/MAX437 AX410/MAX412/MAX414 LT1007 DG070b0

    MGFC44V

    Abstract: MGFC44V6472
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC44V6472 6 . 4 — 7.2G H Z BAND 2 4 W INTERNA LLY M ATCHED GaAs FE T DESCRIPTION T h e M G F C 4 4 V 6 4 7 2 is an in te rn a lly OUTLINE DRAWING im p e d a n c e -m a tc h e d G aA s p o w e r F E T especially designed fo r use in 6 .4 ~


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    PDF MGFC44V6472 MGFC44V6472 42dBc MGFC44V

    UF320

    Abstract: D0201AD UF310 UF315
    Text: Ultra Fast Recovery Rectifiers UF310 - UF320 X D im . In ch es Minimum A B C D CATHODE BAND .188 1.00 .285 .046 M illim e te r M axim um Minim um .260 .375 .056 4.78 25 .4 7.24 1.17 M axim um Notes 6.50 -9.52 1.42 Dia. Dia. PLASTIC D0201AD -II-: Microsemi


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    PDF UF310 UF320 D0201AD UF315 UF320 UF310 D0201AD

    8007C

    Abstract: LA 7612 AD503 LH0042 740C 740M 8007AC 8007AM 8007M 8043C
    Text: Operational Amplifiers — FET Input also see Operational Amplifier, CMOS Slew Type Vos (m V) Description LH0042 General Purpose AD503 SU536 lb (nA) A vol (V /V ) GBW (typ) Rate •s u p p Ta (M H z) (V / Ms) (m A) (°C) 5 .0 10 50.000 6 23 High Accuracy. Low Offset


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    PDF LH0042 AD503 SU536 8007M 8007AM 8007M, 8007C 8007AC 8007C, 00ription LA 7612 740C 740M 8043C