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    MGFC44V Price and Stock

    Mitsubishi Electric MGFC44V5964-52

    C BAND, GAAS, N-CHANNEL, RF POWER, JFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MGFC44V5964-52 26
    • 1 $58.5
    • 10 $56.25
    • 100 $54
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    MGFC44V Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MGFC44V3436 Mitsubishi 3.4-3.6GHz BAND 25W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC44V3642 Mitsubishi 3.6-4.2GHz BAND 24W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC44V3642 Mitsubishi 3.6-4.2GHz BAND 24W INTERNALLY MATCHED GaAs FET Scan PDF
    MGFC44V4450 Mitsubishi 4.4-5.0GHz BAND 24W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC44V4450 Mitsubishi 4.4 - 5.0 GHz BAND 24W INTERNALLY MATCHED GaAs FET Scan PDF
    MGFC44V5964 Mitsubishi 5.9-6.4GHz BAND 24W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC44V5964 Mitsubishi 5.9-6.4GHz BAND 24W INTERNALLY MATCHED GaAs FET Scan PDF
    MGFC44V6472 Mitsubishi 6.4-7.2GHz BAND 24W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC44V6472 Mitsubishi 6.4-7.2GHz BAND 24W INTERNALLY MATCHED GaAs FET Scan PDF

    MGFC44V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MGFC44V4450

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC44V4450 4.4 ~ 5.0GHz BAND 24W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC


    Original     		PDF MGFC44V4450 MGFC44V4450

    MGFC44V5964

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC44V5964 5.9 ~ 6.4GHz BAND 24W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC


    Original     		PDF MGFC44V5964 MGFC44V5964

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC44V4450 4.4 – 5.0 GHz BAND / 25W DESCRIPTION unit : m m OUTLINE The MGFC44V4450 is an internally impedance-matched GaAs power FET especially designed for use in 4.4 – 5.0 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC44V4450 MGFC44V4450 -45dBc

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC44V3642 3.6 – 4.2 GHz BAND / 24W DESCRIPTION unit : m m OUTLINE The MGFC44V3642 is an internally impedance-matched GaAs power FET especially designed for use in 3.6 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC44V3642 MGFC44V3642 -42dBc

    MGFC44V6472

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC44V6472 6.4 ~ 7.2GHz BAND 24W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC


    Original     		PDF MGFC44V6472 MGFC44V6472

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC44V6472 6.4 – 7.2 GHz BAND / 24W DESCRIPTION unit : m m OUTLINE The MGFC44V6472 is an internally impedance-matched GaAs power FET especially designed for use in 6.4 – 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC44V6472 MGFC44V6472 -42dBc

    MGFC44V3436

    Abstract: power amplifier 5 ghz
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC44V3436 3.4 - 3.6GHz BAND 25W INTERNALLY MATCHED GaAs FET O U TLIN E FEATURES 2M IN DESCRIPTION The MGFC44V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC44V3436 MGFC44V3436 -45dBc 25deg power amplifier 5 ghz

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC44V3436 3.4 – 3.6 GHz BAND / 25W DESCRIPTION unit : m m OUTLINE The MGFC44V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC44V3436 MGFC44V3436 -45dBc

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC44V4450 4.4 – 5.0 GHz BAND / 25W DESCRIPTION unit : m m OUTLINE The MGFC44V4450 is an internally impedance-matched GaAs power FET especially designed for use in 4.4 – 5.0 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC44V4450 MGFC44V4450 -45dBc

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC44V3436 3.4 – 3.6 GHz BAND / 25W DESCRIPTION unit : m m OUTLINE The MGFC44V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC44V3436 MGFC44V3436 -45dBc

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC44V5964 5.9 – 6.4 GHz BAND / 24W DESCRIPTION unit : m m OUTLINE The MGFC44V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC44V5964 MGFC44V5964 -42dBc

    C 34 F

    Abstract: MGFC44V3436 GAAS FET AMPLIFIER f 10Mhz to 2 GHz
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC44V3436 3.4~3.6GHz BAND 25W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC44V3436 is an internally impedance matched GaAs power FET especially designed for use in 3.4~3.6 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC44V3436 MGFC44V3436 -45dBc 120mA item-51, 10MHz C 34 F GAAS FET AMPLIFIER f 10Mhz to 2 GHz

    F236

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC44V3436 3.4 - 3.6GHz BAND 25W INTERNALLY MATCHED GaAs FET DESCRIPTION unit : mm OUTLINE The MGFC44V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC44V3436 MGFC44V3436 -45dBc 25deg June/2004 F236

    60Ghz

    Abstract: MGFC44V3436
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC44V3436 3.4 - 3.6GHz BAND 25W INTERNALLY MATCHED GaAs FET OUTLINE FEATURES 2MIN DESCRIPTION The MGFC44V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC44V3436 MGFC44V3436 -45dBc 25deg 60Ghz

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC44V5964 5.9 – 6.4 GHz BAND / 24W DESCRIPTION unit : m m OUTLINE The MGFC44V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC44V5964 MGFC44V5964 -42dBc

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC44V6472 6.4 – 7.2 GHz BAND / 24W DESCRIPTION unit : m m OUTLINE The MGFC44V6472 is an internally impedance-matched GaAs power FET especially designed for use in 6.4 – 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC44V6472 MGFC44V6472 -42dBc

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC44V3642 3.6 – 4.2 GHz BAND / 24W DESCRIPTION unit : m m OUTLINE The MGFC44V3642 is an internally impedance-matched GaAs power FET especially designed for use in 3.6 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC44V3642 MGFC44V3642 -42dBc

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original     		PDF M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC44V3436 3.4~3.6GHz BAND 25W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FC44V3436 is an internally im pedance matched GaAs power FET especially designed for use in 3.4~3.6 GHz band amplifiers. The herm etically sealed m etal-ceramic


    OCR Scan     		PDF MGFC44V3436 FC44V3436 -45dBc 120mA

    3642G

    Abstract: MGFC44V3642
    Text: MITSUBISHI S E M IC O N D U C T O R <GaAs FET> MGFC44V3642 3.6-4.2GHZ BAND 24W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC44V3642 is an internally impedance-matched CUTUP'EDRßiWNG Lht:nillimeters inches GaAs power FET especially designed for use in 3.6-4.2


    OCR Scan     		PDF MGFC44V3642 MGFC44V3642 -42dBc digita27 90GHz 25deg Dec-98 3642G

    MGFC44V5964

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC44V5964 5 .9 —6 .4G H z BAND 2 4 W IN TERN A LLY MATCHED GaAs F E T DESCRIPTION OUTLINE DRAW ING The M G F C 4 4 V 5 9 6 4 is an in te rn a lly impedance-matched Unit: millimeters inches GaAs power F E T especailly designed fo r use in 5.9 ~ 6.4


    OCR Scan     		PDF MGFC44V5964 MGFC44V5964 -42dBc

    47GHz

    Abstract: MGFC44V4450 ADQ44 FET 355
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC44V4450 4.4 ~ 5.0GHz BAND 24W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC44V4440 is an internally impedence matched GaAs power FET especially designed for use in 4.4 ~ 5.0 OUTLINE DRAWING Unit:millimeters GHz band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		PDF MGFC44V4440 ltem-51] MGFC44V4450 GF-38 00GHz 47GHz MGFC44V4450 ADQ44 FET 355

    MGF2430A

    Abstract: MGF4714AP MGF4914D MGF4919 MGF1402B MGF2430 MGF1923 7.1 power amplifier circuit diagram block diagram of power factor meter mgf2445
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> APPLICATION NOTE RECOMMENDED LINE-UP FOR LOW NOISE DEVICES APPLICATION NOTE 1. Recommended Line-Up 1.1 Line-up for 12G Hz Band Converter W G - M IC CO NVERTER RF AM P 1ST STAGE M IX E R 2N D S T A G E IF A M P 3R D S T A G E


    OCR Scan     		PDF 12GHz MGF4919E MGF4914E MGF49T4D MGF4714AP MGF4914D MGF1923 MGF1902B MGF2430A MGF4919 MGF1402B MGF2430 7.1 power amplifier circuit diagram block diagram of power factor meter mgf2445

    MGF4919G

    Abstract: MGF4919 mgf1903b MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A
    Text: lid GaAs FETs •GaAs FET SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS <Ta = 25-c> PT If f -6 mA ¡¡m i 100 360 < (GHe) ' (mA) f t 3 10 NFmin max (dB) Qs min (dB! 11 4 1.4 4 1.0 12 2.0 i I MGF1302 Vf l P -6 -6 -6 80 240 3 10 MGF1323 -6 -6 80 240 3 10


    OCR Scan     		PDF MGF1302 MGF1303B MGF1323 MGF14 MGF1412B MGF1403B MGF1423B MGF1425B MGF1902B MGF1903B MGF4919G MGF4919 MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A