EMP214
Abstract: No abstract text available
Text: EMP214 12.50 – 15.50 GHz Power Amplifier MMIC UPDATED 05/08/2008 FEATURES • • • • 12.5 – 15.5 GHz Operating Frequency Range 29.5dBm Output Power at 1dB Compression 16.0 dB Typical Small Signal Gain -42dBc OIMD3 @Each Tone Pout 18.5dBm APPLICATIONS
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EMP214
-42dBc
2650um
2140um
750mA)
EMP214H
EMP214L
EMP214
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RFMA0913-1W
Abstract: No abstract text available
Text: RFMA0913-1W 9.50 – 13.30 GHz Power Amplifier MMIC UPDATED 12/12/2005 FEATURES • • • • 9.50 – 13.30GHz Operating Frequency Range 30.0dBm Output Power at 1dB Compression 31.0 dB Typical Power Gain @ 1dB Gain Compression -42dBc Typical OIM3 @ each tone Pout 19.0dBm
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RFMA0913-1W
30GHz
-42dBc
RFMA0913
RFMA0913-1W-01
RFMA0913-1W-01A
RFMA0913-1W-01B
RFMA0913-1W-01C
RFMA0913-1W-02
RFMA0913-1W-03
RFMA0913-1W
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RFMA7185
Abstract: No abstract text available
Text: RFMA7185 -2W 7.10 – 8.50 GHz Power Amplifier MMIC UPDATED 05/08/08 FEATURES • • • • 7.10– 8.50GHz Operating Frequency Range 33dBm Output Power at 1dB Compression 30.0 dB Typical Power Gain @1dB gain compression -42dBc Typical OIM3 @ each tone Pout 22dBm
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RFMA7185
50GHz
33dBm
-42dBc
22dBm
RFMA7185
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antenna 434MHz
Abstract: APP4929 MAX7044 MAX7044EVKIT 434MHZ
Text: Maxim > Design Support > App Notes > Wireless and RF > APP 4929 Keywords: ISM, RF, transmitter, short-range, RFIC, switching power amplifier, ETSI APPLICATION NOTE 4929 Aug 23, 2011 Adapting Low-Band ISM Transmitters for High-Band Operation Abstract: ISM 300MHz to 450MHz band RF transmitters already serve the European 434MHz market, as well as the most important
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300MHz
450MHz
434MHz
260MHz
470MHz
868MHz
antenna 434MHz
APP4929
MAX7044
MAX7044EVKIT
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GRM1555C1H1R0BZ01
Abstract: GRM1555C1H1R0BZ01E P12* RF qfn 3X3 land pattern LQG15HN12NJ02D RF5188 RF5188PCBA-41X GRM1555C1H1R
Text: RF5188 RoHS Compliant & Pb-Free Product 3V 1950MHZ W-CDMA LINEAR POWER AMPLIFIER MODULE Typical Applications • 3V W-CDMA Band 1 Handsets • 3V TD-SCDMA Handsets • Multi-Mode W-CDMA 3G Handsets • Spread-Spectrum Systems Product Description The RF5188 is a high-power, high-efficiency linear amplifier module specifically designed for 3V handheld systems. The device is manufactured on an advanced third
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RF5188
1950MHZ
RF5188
1920MHz
1980MHz
203mm
330mm
025mm
GRM1555C1H1R0BZ01
GRM1555C1H1R0BZ01E
P12* RF
qfn 3X3 land pattern
LQG15HN12NJ02D
RF5188PCBA-41X
GRM1555C1H1R
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2.4GHz rc radio circuit diagram
Abstract: QPSK ofdm transceiver 2.4ghz CX-3225SB MAX2830 MAX2831 antenna diversity switch f antenna balun 2.4ghz lna 30MHz to 2.4GHZ synthesizer antenna diversity
Text: 19-0774; Rev 2; 3/11 KIT ATION EVALU E L B A IL AVA 2.4GHz to 2.5GHz 802.11g/b RF Transceiver, PA, and Rx/Tx/Antenna Diversity Switch The MAX2830 direct conversion, zero-IF, RF transceiver is designed specifically for 2.4GHz to 2.5GHz 802.11g/b WLAN applications. The MAX2830 completely integrates
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11g/b
MAX2830
11g/b
MAX2830
2.4GHz rc radio circuit diagram
QPSK ofdm transceiver 2.4ghz
CX-3225SB
MAX2831
antenna diversity switch
f antenna balun 2.4ghz
lna 30MHz to
2.4GHZ synthesizer
antenna diversity
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Untitled
Abstract: No abstract text available
Text: 19-0774; Rev 0; 3/07 KIT ATION EVALU E L B A IL AVA 2.4GHz to 2.5GHz 802.11g/b RF Transceiver, PA, and Rx/Tx/Antenna Diversity Switch The MAX2830 direct conversion, zero-IF, RF transceiver is designed specifically for 2.4GHz to 2.5GHz 802.11g/b WLAN applications. The MAX2830 completely integrates
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11g/b
MAX2830
11g/b
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CDSCB10M7GA136
Abstract: rt data saw 433 rx tx switch 433 BFP450 10dBm saw transistor transmitter CB9 smd transistor Ceramic filter 107ma TH7122.1 murata 10.7MA ceramic filter SFECF10M7HA00
Text: Application Note Transceiver TH7122x External PA, LNA and TX/RX switch TH7122 and TH71221 with External PA and LNA The output power and the sensitivity of TH7122x transceivers for SRD are enough for many applications. They can deliver up to 10dBm output power and have a sensitivity of up to -105dBm in FSK mode.
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TH7122x
TH7122
TH71221
TH7122x
10dBm
-105dBm
AN7122x
Feb/07
CDSCB10M7GA136
rt data saw 433
rx tx switch 433
BFP450
10dBm saw transistor transmitter
CB9 smd transistor
Ceramic filter 107ma
TH7122.1
murata 10.7MA ceramic filter
SFECF10M7HA00
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Untitled
Abstract: No abstract text available
Text: ATA5823/ATA5824 UHF ASK/FSK Transceiver DATASHEET Features ● High FSK sensitivity: –105.5dBm at 20Kbit/s/–109dBm at 2.4Kbit/s 433.92MHz ● High ASK sensitivity: –111.5dBm at 10Kbit/s/–116dBm at 2.4Kbit/s (100% ASK, carrier level 433.92MHz) ● Low supply current: 10.5mA in RX and TX mode (3V/TX with 5dBm/433.92MHz)
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ATA5823/ATA5824
20Kbit/s/â
109dBm
92MHz)
10Kbit/s/â
116dBm
5dBm/433
20Kbit/s
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Untitled
Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC44V3642 3.6 – 4.2 GHz BAND / 24W DESCRIPTION unit : m m OUTLINE The MGFC44V3642 is an internally impedance-matched GaAs power FET especially designed for use in 3.6 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC44V3642
MGFC44V3642
-42dBc
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BB555
Abstract: BB640 BCW31 DS5775 SL2610 34063 application note Molex-3
Text: SL2610 Wide Dynamic Range Image Reject MOPLL Data Sheet DS5775 Issue 2.3 Features • • • VccLO LOHIIPB LOHIOPB LOHIOP LOHIIP VccLO • • LOMIDOPB • -40o C to 85o C LOMIDOP • Ordering Information SL2610/IG/LH1S tubes SL2610/IG/LH1T (tape & reel)
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SL2610
DS5775
SL2610/IG/LH1S
SL2610/IG/LH1T
BB555
BB640
BCW31
DS5775
SL2610
34063 application note
Molex-3
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7805 sot23
Abstract: 7805 to92 Datasheet superheterodyne receiver WCDMA LT5517 7805 5v TO92 7805 to92 FM Modulator 2GHz GSM project circuit LT1715 LT5502
Text: 10.2006 Wireless & RF Solutions High Performance Analog ICs Cellular and 3G wireless basestations are continually driven to increase their call capacity and provide higher data rates, while maintaining high quality service. Linear Technology’s analog and RF ICs provide superior linearity, signal-to-noise performance, compact form
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WSB10K1205
7805 sot23
7805 to92 Datasheet
superheterodyne receiver WCDMA
LT5517
7805 5v TO92
7805 to92
FM Modulator 2GHz
GSM project circuit
LT1715
LT5502
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QPSK ofdm transceiver 2.4ghz
Abstract: MAX2830ETM 2.4GHz rc radio circuit diagram antenna diversity switch 2.4GHz rc circuit diagram synthesizer 2400Mhz
Text: EVALUATION KIT AVAILABLE MAX2830 LE AVAILAB 2.4GHz to 2.5GHz 802.11g/b RF Transceiver, PA, and Rx/Tx/Antenna Diversity Switch General Description The MAX2830 direct conversion, zero-IF, RF transceiver is designed specifically for 2.4GHz to 2.5GHz 802.11g/b
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MAX2830
11g/b
MAX2830
QPSK ofdm transceiver 2.4ghz
MAX2830ETM
2.4GHz rc radio circuit diagram
antenna diversity switch
2.4GHz rc circuit diagram
synthesizer 2400Mhz
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LT5526
Abstract: LT1993-2 LT5514 LT5522 LT5524 LT5527 TS16949 LT6600-20 47DBM LTC2624
Text: 12.2005 Wireless & RF Solutions High Performance Analog ICs Cellular and 3G wireless basestations are continually driven to increase their call capacity and provide higher data rates, while maintaining high quality service. Linear Technology’s analog and RF ICs provide superior linearity, signal-to-noise performance, compact form
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cornerston93)
D-73230
I-20156
SE-164
WSB10K1205
LT5526
LT1993-2
LT5514
LT5522
LT5524
LT5527
TS16949
LT6600-20
47DBM
LTC2624
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LQG15HN12NJ02D
Abstract: No abstract text available
Text: RF5188 RF51883V 1950 MHz WCDMA Linear Power Amplifier Module 3V 1950MHZ W-CDMA LINEAR POWER AMPLIFIER MODULE RoHS Compliant & Pb-Free Product Package Style: QFN, 16-Pin, 3 x 3 27.5dBm Linear Output Power 42% Peak Linear Efficiency 28dB Linear Gain
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RF51883V
RF5188
1950MHZ
16-Pin,
-42dBc
RF5188
203mm
330mm
025mm
DS060310
LQG15HN12NJ02D
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RF7321
Abstract: band21 RFMD LTE Band 40 rf732 RF7321PCBA-410 LTE RFMD mems matching network RFMD PA LTE
Text: RF7321 3V LTE Band 11, 21 Linear PA Module Package Style: Module, 10-Pin, 3mm x 3mm x 0.8mm Features Fully Compliant to LTE Modulation LTE Bands 11, 21 Best-in-Class Efficiency 47%, +28.5dBm Rel 99 output power High Power Gain : 28dB
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RF7321
10-Pin,
-38dBc
-39dBc
RF7321
203mm
330mm
025mm
DS120906
band21
RFMD LTE Band 40
rf732
RF7321PCBA-410
LTE RFMD mems matching network
RFMD PA LTE
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im1615
Abstract: LQG15HN12NJ02D
Text: RF5188 3V W-CDMA LINEAR POWER AMPLIFIER MODULE Typical Applications • 3V W-CDMA Handsets • Spread-Spectrum Systems • Multi-Mode W-CDMA 3G Handsets Product Description The RF5188 is a high-power, high-efficiency linear amplifier module specifically designed for 3V handheld systems. The device is manufactured on an advanced third
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RF5188
RF5188
1920MHz
1980MHz
16-pin,
203mm
330mm
025mm
im1615
LQG15HN12NJ02D
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Automatic Hardware Reconfiguration for Current Reduction at Low Power in RFIC PAs
Abstract: No abstract text available
Text: 1560 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 59, NO. 6, JUNE 2011 Automatic Hardware Reconfiguration for Current Reduction at Low Power in RFIC PAs Nicolas G. Constantin, Member, IEEE, Peter J. Zampardi, Senior Member, IEEE, and Mourad N. El-Gamal, Member, IEEE
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Delay linear sweep generator using 555 timer
Abstract: No abstract text available
Text: Agilent X-Series Signal Analyzer This help file provides documentation for the following X-Series Analyzers: PXA Signal Analyzer N9030A MXA Signal Analyzer N9020A EXA Signal Analyzer N9010A CXA Signal Analyzer N9000A MXE EMI Receiver N9038A Spectrum Analyzer Mode
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N9030A
N9020A
N9010A
N9000A
N9038A
Delay linear sweep generator using 555 timer
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data sheet str 6753
Abstract: STR 6753 SR 7231 LT6200-10 LT6200-5 47DBM LT5526 t54 sot-23 TS16949 LT1993-2
Text: 04.2006 ワイヤレス&RFソリューション 高性能アナログIC 携帯基地局や第3世代ワイヤレス基地局はサービスの品質を維持しつつ、絶えずコール容量の増大とデ ータレートの高速化を求められています。リニアテクノロジーのアナログおよびRFデバイスは、直線性、
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1993ISO9001
1998QS9000
2003TS16949
01ppm
I-20156
SE-164
data sheet str 6753
STR 6753
SR 7231
LT6200-10
LT6200-5
47DBM
LT5526
t54 sot-23
TS16949
LT1993-2
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F C 44V 5964 5 . 9 —6 .4 G H z BAND 2 4 W INTERNA LLY M ATCHED GaAs FET DESCRIPTION OUTLINE D R A W IN G The M G F C 4 4 V 5 9 6 4 is an internally impedance-matched Unit: millimeters inches GaAs power F E T especailly designed for use in 5.9 ~ 6.4
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SIEMENS CAPACITOR
Abstract: No abstract text available
Text: SIEMENS CG Y 0819 GaAs MMIC • • • • • • Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones Dual band operation 31.5 dBm saturated output power @ PAE=55% typ. 29 dBm linear output power@ PAE=40% typ. Two independent amplifier chains
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Q62702G0076
SIEMENS CAPACITOR
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGF7170AC Technical Note UHF BAND GaAs POWER AMPLIFIER S pecifications are su b je ct to ch a n g e w ith o u t notice. PIN CONFIGURATION TOP VIEW DESCRIPTION T he M G F7170A C is a m onolithic m icrow ave integrated
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MGF7170AC
F7170A
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3642G
Abstract: MGFC44V3642
Text: MITSUBISHI S E M IC O N D U C T O R <GaAs FET> MGFC44V3642 3.6-4.2GHZ BAND 24W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC44V3642 is an internally impedance-matched CUTUP'EDRßiWNG Lht:nillimeters inches GaAs power FET especially designed for use in 3.6-4.2
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MGFC44V3642
MGFC44V3642
-42dBc
digita27
90GHz
25deg
Dec-98
3642G
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