RU2B
Abstract: No abstract text available
Text: RU2YX-RU2C High Efficiency Rectifiers VOLTAGE RANGE: 100- 1000 V CURRENT: 1.5 - 0.8 A DO - 15L Features Low cos t Diffus ed junction Low leakage Low forward voltage drop Eas ily cleaned with freon, alcohol, ls opropand The plas tic m aterial carries U/L recognition 94V-0
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DO-15L,
RU2B
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Untitled
Abstract: No abstract text available
Text: ERA34-10 Fast Recovery Rectifier VOLTAGE RANGE: 1000 V CURRENT: 0.1 A DO - 41 Features Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol and similar s olvents The plas tic m aterial carries U/L recognition 94V-0
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ERA34-10
DO-41
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UF5408 BL
Abstract: UF5400 UF5408
Text: BL GALAXY ELECTRICAL ULTRA FAST RECTIFIER UF5400 - - - UF5408 VOLTAGE RANGE: 50 - 1000 V CURRENT: 3.0 A FEATURES DO - 27 Low cos t Low leakage Low forward voltage drop High current capability Easily cleaned with alcohol,Isopropanol and similar solvents The plas tic material carries U/L recognition 94V-0
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UF5400
UF5408
DO--27
STD-202
F5400
F5404
UF5408 BL
UF5408
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Untitled
Abstract: No abstract text available
Text: KBJ8A-KBJ8M Silicon Bridge Rectifiers VOLTAGE RANGE: 50 - 1000 V CURRENT: 8.0 A KBJ Features 4.7± 0.25 Rating to 1000V PRV 30± 0.3 3.7± 0.2 φ3 . Reliable low cos t cons truction utilizing m olded plas tic technique res ults in inexpens ive product 5.5± 0.2
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MIL-STD-202
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2613-15F
Abstract: 2613-15N 2613-20F 2613-20N 2613-25F 2613-25N 2613-45F 2613-45N
Text: DESCRIPTION FEATURES T he S ig n e tic s 2 6 1 3 is a h ig h s p e e d , 4 0 9 6 b it s ta tic ra n d o m a c c e s s m em ory. U tiliz in g th e S ig n e tic s n -ch a n n e l, s i-g a te M in i-M O S te c h n o lo g y to a c h ie v e h ig h p e rfo rm a n c e a nd
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4096x
2613-15F
2613-15N
2613-20F
2613-20N
2613-25F
2613-25N
2613-45F
2613-45N
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Untitled
Abstract: No abstract text available
Text: STK10C68 T h e S im te k S T K 10C 68 is a fast sta tic RAM 2 5 ,3 0 , 35, and 45ns , w ith anonvo la tile e le ctrica lly-e ra sa b le PROM (EEPROM) e lem ent incorporate d in each sta tic m e m ory cell. T h e SRAM can be read and w ritten an unlim ited
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STK10C68
10C68
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Untitled
Abstract: No abstract text available
Text: gjJÎ'N 256K X 32 BiCMOS/CMOS STATIC RAM MODULE | | dt IDT7MP4045 Integrated Dev ce Technology, Inc. FEATURES: DESCRIPTION: • H igh d e n s ity 1 m e g a b y te s ta tic R A M m o dule T h e ID T 7 M P 4 0 4 5 is a 2 5 6 K x 3 2 s ta tic R A M m o dule
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IDT7MP4045
IDT7MP4045
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Opto-isolator
Abstract: No abstract text available
Text: Optoisolator Specifications H74A1 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor TTL Interface T h e H 74A 1 p ro v id e s log ic-to -lo g ic o p tic a l in te rf a c in g o f T T L ga te s w ith g uaranteed lev el c o m p a tib ility in p ra c tic al specified circuits. T h e
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H74A1
74S00
Opto-isolator
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K321
Abstract: MS621008-20EC MS621008-20KC MS621008-25EC MS621008-35EC
Text: MOSEL MS621008 P R E L IM IN A R Y 128K x 8 CMOS Static RAM FEATURES DESCRIPTION F a st A c c e s s T im e s : *2 0 /2 5 /3 5 ns T h e M S 6 2 1 0 0 8 is a high s p e e d 1 M -b it s ta tic R AM o rg a n iz e d a s 12 8 K x 8. F u lly s ta tic in o p e ra tio n , th e C hip
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MS621008
400-Mil
MS621008
PID078
MS621008-20EC
E32-1*
MS621008-25EC
K321
MS621008-20KC
MS621008-35EC
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TD5A
Abstract: YH 504
Text: S c h e m a tic : .J Isolation Voltage: 1500 Vrms INPUT to OUTPUT UTP SIDE OCL: 350uH Min @100KHz 100mV 8mADC Rise Time (1 0 — 90%): 2.5ns Typical Insertion Loss (300KHz— 1.0MHz): — 1.0dB Maximum (1 .0MHz— 15.0MHz): -0 .3 d B Maximum (1 5.0MHz— 60.0MHz): -0 .6 d B Maximum
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350uH
100KHz
100mV
300KHz-1
100MHz)
300KHz-60
-18dB
80MHz)
-15dB
TD5A
YH 504
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mar 601
Abstract: MAR 801 TD 5 A
Text: S c h e m a tic : .J Isolation Voltage: 1500 Vrms INPUT to OUTPUT UTP SIDE OCL: 350uH Min @1OOKHz 100mV 8mADC Rise Time (10— 90%): 2.5ns Typical Insertion Loss (1 OOKHz— 999KHz): — 1.0dB Maximum (1.0M H z-15.0MHz): -0 .3 d B Maximum (15.1MHz— 60.0MHz): -0 .6 d B Maximum
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350uH
100KHz
100mV
100KHz-999KHz)
100MHz)
100KHz-60
-18dB
80MHz)
-15dB
mar 601
MAR 801
TD 5 A
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Untitled
Abstract: No abstract text available
Text: S ig n e tic s 54F148 Encoder 8-input Priority Encoder Product Specification Military Logic Products ORDERING INFORMATION FEATURES DESCRIPTION • Code conversions Th e • Multi-channel D/A converter accepts data from eight active-Low inputs and provides a binary representation on
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54F148
54F148
500ns
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Untitled
Abstract: No abstract text available
Text: MOSEL VITELIC ADVANCED INFORMATION V62C51161024 64K x 16 STA TIC RAM Features Description • High-speed: 25, 35, 45, 70 ns ■ Ultra low DC operating current of 4mA max. - TTL Standby: 3 mA (Max.) - CMOS Standby: 20 |iA (Max.) ■ Fully static operation
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V62C51161024
44-pin
576-bit
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4264 ram
Abstract: No abstract text available
Text: PRELIMINARY IDT7MPV4135 IDT7MPV4120 512K x 3 2 ,1M x 32 3.3V CMOS STATIC RAM MODULE Integrated D evice Technology, Tic. FEATURES DESCRIPTION • High-density 2MB and 4MB Static RAM modules • Low profile 72-lead, gold plated SIMM Single In-line Memory Module
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IDT7MPV4135
IDT7MPV4120
72-lead,
IDT7MPV4060
IDT7MPV4145
IDT7MPV4120
4264 ram
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MMBC1623L5
Abstract: 519 SOT23 TRANSISTOR pc 135 MMBC1623L3 519 SOT23 MARKING
Text: SAMSUNG SEMICONDUCTOR INC MMBC1623L5 IME D 17^4142 000754*1 7 | NPN EPITAXIAL SILICON TRANSISTOR T-A 9- <? AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta=25°C C h a ra c te ris tic Collector-Base Voltage Collector-Emitter Voltage .Emitter-Base Voltage
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MMBC1623L5
OT-23
MMBC1623L3
100mA,
100MHz
519 SOT23
TRANSISTOR pc 135
519 SOT23 MARKING
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16RL470ME11
Abstract: 16RL330MD11 60x3 2RL1000 10RL150MC8
Text: Represented and Distributed by ICD Sales Corp. - www.icd-sales.com | RL series • Larger capacitance or Lower ESR than RS series ■ Super low ESR at a high frequency ■ High ripple current Specifications C h a ra c te ris tic s Temperature range Rated voltage range
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100/f
120Hz)
105-C/Z
Z-55-c/Z
100kHz
Enduran80
10x11
6RL680ME11
6RL820MD9
16RL470ME11
16RL330MD11
60x3
2RL1000
10RL150MC8
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Untitled
Abstract: No abstract text available
Text: ^ c te l -m Package Characteristics and Mechanical Drawings P a c k a g e T h e rm a l C h a ra c te ris tic s Package Type Plastic Leaded Chip Carrier PLCC Plastic Quad Flatpack (PQFP) Plastic Quad Flatpack (PQFP)
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PBGA272
PBGA313
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC MMBT3906 m 7 T h m M 2 ODQ^OMl 4 E3SM6K MEE D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta= 25 °C C h a ra cte ris tic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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MMBT3906
300nS;
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KST2222
Abstract: No abstract text available
Text: KST2222 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C h a ra c te ris tic Sym bol C ollector-Base Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollector Current C ollector D issipation
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KST2222
300ns,
KST2222
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80c451
Abstract: Edd 44 809X AD11 53AD7 CM712 16-bit pata controller P4161 S31A9
Text: S ig n e tic s SC96AH Series Single-Chip 16-Bit Microcontrollers Prelim inary Specification Microprocessor Products DESCRIPTION The SC96AH Series microcontrollers consist of a powerful 16-bit CPU tightly coupled with 8K bytes of program mem ory, 232 bytes of data memory and I/O
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SC96AH
16-Bit
32-bit
12MHz
2012H
207FH
80c451
Edd 44
809X
AD11
53AD7
CM712
16-bit pata controller
P4161
S31A9
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Untitled
Abstract: No abstract text available
Text: KM23C32005G CMOS MASK ROM 32M-Bit 4M x 8 /2 M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304 x 8 (byte mode) The KM23C32005G is a fu lly s ta tic m ask program mable ROM fabricated using s ilicon gate CMOS process
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KM23C32005G
32M-Bit
KM23C32005G
A3-A20
KM23C32005G)
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APT40GF100BN
Abstract: TO 48 THYRISTOR FAST SWITCHING TRANSISTOR 400 VOLTS
Text: A D VA NC ED POUER TECHNOLOGY b lE D • D E S TIC I □ OOOfl'iG b3T *A V P A dvanced po w er TECHNOLOGY APT40GF100BN 1000V 40A N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR All Ratings: Tc = 25°C unless otherwise specified.
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DES71Ã
APT40GF100BN
TO 48 THYRISTOR FAST SWITCHING
TRANSISTOR 400 VOLTS
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d449c
Abstract: PD449 pd4493 449C
Text: mPD449 2 ,0 48 X 8-BIT STATIC CMOS RAM NEC NEC Electronics Inc. Revision 4 Description Pin Configuration The ^PD449 is a high-speed, tow-power, 2048-word by 8b it s ta tic CMOS RAM fabricated w ith advanced silicongate CMOS technology. A unique c ircu itry technique
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uPD449
2048-word
nPD449
fiPD449
24-pin
PD449
d449c
pd4493
449C
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SMD M0
Abstract: No abstract text available
Text: 2432 S e r i e s □upnn FFC/FPC Connector 1.0mm 0.039” Non ZIF M aterial: Housing: High te m p e ra tu re housing U L 9 4 V -0 w ith sta n ds IR and VPR soldering m ethods. Contacts: P hosphor Bronze. Leg: Brass. Plating: Tin plated. E lectrical C h a ra c te r is tic s:
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UL94V-0
20mQmax.
100mA.
SMD M0
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