Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11406-1E MEMORY CMOS 2 x 512 K × 16 Bit Single Data Rate I/F FCRAMTM Extended Temp.Version Consumer/Embedded Application Specific Memory MB81E161622-10-X/-12-X CMOS 2-Bank × 524,288-Word × 16 Bit Fast Cycle Random Access Memory (FCRAM) with Single Data Rate
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DS05-11406-1E
MB81E161622-10-X/-12-X
288-Word
MB81E161622
16-bit
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TSOP 54 Package
Abstract: TSOP 54 PIN 54-PIN TSOP II 54 Package
Text: THIN SMALL OUTLINE L-LEADED PACKAGE 54 PIN PLASTIC FPT-54P-M01 54-pin plastic TSOP II Lead pitch 0.80mm Package width 500mil Lead shape Gullwing Sealing method Plastic mold (FPT-54P-M01) * : Resin protrusion. (Each side : 0.15 (.006) Max) 54-pin plastic TSOP (II)
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FPT-54P-M01
500mil
54-pin
FPT-54P-M01)
F54001S-2C-1
TSOP 54 Package
TSOP 54 PIN
TSOP II 54 Package
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE4.1E MEMORY CMOS 4 x 1 M × 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F641642D-75/-102/-102L CMOS 4-Bank × 1,048,576-Word × 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F641642D is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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MB81F641642D-75/-102/-102L
576-Word
MB81F641642D
16-bit
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Untitled
Abstract: No abstract text available
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11025-3E MEMORY CMOS 4 x 4 M × 4 BIT SYNCHRONOUS DYNAMIC RAM MB81164442A-100/-84/-67/-100L/-84L/-67L CMOS 4-Bank × 4,194,304-Word × 4 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION
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DS05-11025-3E
MB81164442A-100/-84/-67/-100L/-84L/-67L
304-Word
MB81164442A
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11025-2E MEMORY CMOS 4 x 4 M × 4 BIT SYNCHRONOUS DYNAMIC RAM CMOS 4-BANK × 4,194,304-WORD × 4 BIT Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81164442A is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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DS05-11025-2E
2A-125/-100/-84/-67/-125L/-100L/-84L/-67L
304-WORD
MB81164442A
F9704
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11059-1E MEMORY CMOS 4 x 2 M × 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F121642-75/-102/-102L/-10/-10L CMOS 4-Bank × 2,097,152-Word × 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F121642 is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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DS05-11059-1E
MB81F121642-75/-102/-102L/-10/-10L
152-Word
MB81F121642
16-bit
D-63303
F9911
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11046-1E MEMORY CMOS 4 x 4 M × 4 BIT SYNCHRONOUS DYNAMIC RAM MB81F64442C-102/-103/-102L/-103L CMOS 4-Bank × 4,194,304-Word × 4 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F64442C is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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DS05-11046-1E
MB81F64442C-102/-103/-102L/-103L
304-Word
MB81F64442C
F9802
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AE2E
Abstract: MB81F12842-75
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE2E MEMORY CMOS 4 x 4 M × 8 BIT SYNCHRONOUS DYNAMIC RAM MB81F12842-75/-102/-102L/-10/-10L CMOS 4-Bank × 4,194,304-Word × 8 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F12842 is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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MB81F12842-75/-102/-102L/-10/-10L
304-Word
MB81F12842
AE2E
MB81F12842-75
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AE2E
Abstract: MB81F12442-75
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE2E MEMORY CMOS 4 x 8 M × 4 BIT SYNCHRONOUS DYNAMIC RAM MB81F12442-75/-102/-102L/-10/-10L CMOS 4-Bank × 8,388,608-Word × 4 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F12442 is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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MB81F12442-75/-102/-102L/-10/-10L
608-Word
MB81F12442
AE2E
MB81F12442-75
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11053-1E MEMORY CMOS 4 x 2 M × 8 BIT SYNCHRONOUS DYNAMIC RAM MB81F64842D-75/-102/-102L CMOS 4-Bank × 2,097,152-Word × 8 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F64842D is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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DS05-11053-1E
MB81F64842D-75/-102/-102L
152-Word
MB81F64842D
D-63303
F9910
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11057-1E MEMORY CMOS 4 x 8 M × 4 BIT SYNCHRONOUS DYNAMIC RAM MB81F12442-75/-102/-102L/-10/-10L CMOS 4-Bank × 8,388,608-Word × 4 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F12442 is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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DS05-11057-1E
MB81F12442-75/-102/-102L/-10/-10L
608-Word
MB81F12442
D-63303
F9911
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DS05-11047-1E
Abstract: No abstract text available
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11047-1E MEMORY CMOS 4 x 2 M × 8 BIT SYNCHRONOUS DYNAMIC RAM MB81F64842C-102/-103/-102L/-103L CMOS 4-Bank × 2,097,152-Word × 8 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F64842C is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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DS05-11047-1E
MB81F64842C-102/-103/-102L/-103L
152-Word
MB81F64842C
F9802
DS05-11047-1E
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UF5408 BL
Abstract: UF5400 UF5408
Text: BL GALAXY ELECTRICAL ULTRA FAST RECTIFIER F5400 - - - UF5408 VOLTAGE RANGE: 50 - 1000 V CURRENT: 3.0 A FEATURES DO - 27 Low cos t Low leakage Low forward voltage drop High current capability Easily cleaned with alcohol,Isopropanol and similar solvents The plas tic material carries U/L recognition 94V-0
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UF5400
UF5408
DO--27
STD-202
F5400
F5404
UF5408 BL
UF5408
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MB811641642A
Abstract: No abstract text available
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11029-2E MEMORY CMOS 4 x 1 M × 16 BIT SYNCHRONOUS DYNAMIC RAM MB811641642A-100/-84/-67/-100L/-84L/-67L CMOS 4-Bank × 1,048,576-Word × 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION
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DS05-11029-2E
MB811641642A-100/-84/-67/-100L/-84L/-67L
576-Word
MB811641642A
16-bit
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MB81F64842B-103E
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11041-1E MEMORY CMOS 4 x 2 M × 8 BIT SYNCHRONOUS DYNAMIC RAM MB81F64842B-103E/-103/-10/-103L/-10L CMOS 4-Bank × 2,097,152-Word × 8 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F64842B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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DS05-11041-1E
MB81F64842B-103E/-103/-10/-103L/-10L
152-Word
MB81F64842B
F9801
MB81F64842B-103E
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MB81F64442D-102
Abstract: MB81F64442D-102L MB81F64442D-75
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE4.1E MEMORY CMOS 4 x 4 M × 4 BIT SYNCHRONOUS DYNAMIC RAM MB81F64442D-75/-102/-102L CMOS 4-Bank × 4,194,304-Word × 4 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F64442D is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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MB81F64442D-75/-102/-102L
304-Word
MB81F64442D
MB81F64442D-102
MB81F64442D-102L
MB81F64442D-75
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Untitled
Abstract: No abstract text available
Text: MEMORY CMOS 4 x 4 M x 4 BIT SYNCHRONOUS DYNAMIC RAM MB81F64442C-102/-103/-102L/-103L CMOS 4-Bank x 4,194,304-Word x 4 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F64442C is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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MB81F64442C-102/-103/-102L/-103L
304-Word
MB81F64442C
F9802
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Untitled
Abstract: No abstract text available
Text: MEMORY CMOS 4 x 4 M x 4 BIT SYNCHRONOUS DYNAMIC RAM MB81164442A-100/-84/-67/-100L/-84L/-67L CMOS 4-Bank x 4,194,304-Word x 4 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81164442A is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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MB81164442A-100/-84/-67/-100L/-84L/-67L
304-Word
MB81164442A
B81164442A
F9802
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A81DC
Abstract: a21dc a51dc SG 2368 FE8800 ED8000 E78000 FA6400 0110FFFF e7040
Text: MOTOROLA Order at ANE408/0 SEMICONDUCTOR APPLICATION NOTE ANE408 Previously ANE008 Logarithmic/Linear Conversion Routines for DSP56000/1 Prepared by: Eric Cheval Motorola G eneva, Switzerland I. INTRODUCTION DSP chips are often connected to mono-circuits (cofidecs) in telecommunication applications. When programmed *Cs multichannel DTMF
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ANE408/D
DSP56000/1
ANE408
ANE008)
DSP56000/1
300-3400hz
A81DC
a21dc
a51dc
SG 2368
FE8800
ED8000
E78000
FA6400
0110FFFF
e7040
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Untitled
Abstract: No abstract text available
Text: MEMORY CMOS 4 x 2 M x 8 BIT SYNCHRONOUS DYNAMIC RAM MB81164842E-100/-84/-67/-100L/-84L/-67L CMOS 4-Bank x 2,097,152-Word x 8 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81164842E is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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MB81164842E-100/-84/-67/-100L/-84L/-67L
152-Word
MB81164842E
B81164842E
F9803
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1N15
Abstract: No abstract text available
Text: MEMORY CMOS 4 x 1 M x 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F641642C-102/-103/-102L/-103L CMOS 4-Bank x 1,048,576-Word x 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F641642C is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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MB81F641642C-102/-103/-102L/-103L
576-Word
MB81F641642C
16-bit
F9802
1N15
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Untitled
Abstract: No abstract text available
Text: MEMORY CMOS 4 x 2 M x 8 BIT SYNCHRONOUS DYNAMIC RAM MB81F64842C-102/-103/-102L/-103L CMOS 4-Bank x 2,097,152-Word x 8 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F64842C is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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MB81F64842C-102/-103/-102L/-103L
152-Word
MB81F64842C
F9802
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Untitled
Abstract: No abstract text available
Text: IF a s f Logic Digital Delay Units SERIES: DDU-4F I ' 1 » J 1»* t ’ 4 "ìnS “'I T T L Interfaced F e a tu re s : • Auto-insertable. ■ Com pletely interfaced with TTL and DTL application. ■ No external com ponents required. ■ P.C. board space econom y achieved.
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DDU-4F-5025
DDU-4F-5050
F-5075
DDU-4F-5100
DDU-4F-5150
F-5200
F-5250
F-5300
F-5400
F-5500
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Untitled
Abstract: No abstract text available
Text: MEMORY CMOS 4 x 1 M x 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F641642C-102/-103/-102L/-103L CMOS 4-Bank x 1,048,576-Word x 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F641642C is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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MB81F641642C-102/-103/-102L/-103L
576-Word
MB81F641642C
16-bit
54-pin
FPT-54P-M02)
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