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Catalog Datasheet	MFG & Type	PDF	Document Tags
m23c3 Abstract: No abstract text available Text: SAMSUNG ELECTRONICS INC b?E 3 • DD171S1 T3Ô ■ S H 6 K 7^4142 KM23C32005G CMOS MASK ROM 32M-BH 4M x8!2M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304 x 8 (byte mode) 2,097,152 x 16 (word mode) • Fast access time	OCR Scan	PDF	DD171S1 KM23C32005G 32M-BH 150ns 100mA KM23C32005G 7Tbm45 DG1712S KM23C32005G) m23c3
Untitled Abstract: No abstract text available Text: KM23C32005G CMOS MASK ROM 32M-Bit 4M x 8 /2 M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304 x 8 (byte mode) The KM23C32005G is a fu lly s ta tic m ask program mable ROM fabricated using s ilicon gate CMOS process	OCR Scan	PDF	KM23C32005G 32M-Bit KM23C32005G A3-A20 KM23C32005G)
44SOP Abstract: 2MX16 1MX16 Text: M E M O R Y IC s FUNCTION G UIDE 2.6 MASK ROM Continued Capacity Part Number Orgnization Speedfns) Tech. 2MX 8/ 150/200/250 CMOS 2Mx8/ 1M X 16 120/150/200 CMOS * KM23C16005A(G) 2Mx8/ 120/150/200 CMOS (tltt?50) t KM23V16000A(G) 1Mx16 2Mx8/ 1Mx16 KM23C16000(G)	OCR Scan	PDF	KM23C16000 KM23C16000A KM23C16005A KM23V16000A 1Mx16 2Mx16 2Mx16 44SOP
KMCJ532512 Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7	OCR Scan	PDF	KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KMCJ532512 KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL