Untitled
Abstract: No abstract text available
Text: Product Brochure MS4640B Series Family of RF to Microwave and Millimeter-wave Vector Network Analyzers with industry leading frequency span from 70 kHz to 1.1 THz MS4640B Series Vector Network Analyzers Industry leading Frequency Span from 70 kHz to 1.1 THz
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MS4640B
MS4640B
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half watt led OSRAM
Abstract: 1 watt led OSRAM photomultiplier sensor
Text: LEDs and Photometry Appnote 1 The observed spectrum of electromagnetic radiations, extends from a few Hz to beyond 1024 Hz, covering some 80 octaves. The narrow channel from 430 THz to 750 THz would be entirely negligible, except that more information is communicated to
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1-888-Infineon
half watt led OSRAM
1 watt led OSRAM
photomultiplier sensor
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luminance sensor
Abstract: No abstract text available
Text: LEDs and Photometry Appnote 1 by George Smith The observed spectrum of electromagnetic radiations, extends from a few Hz to beyond 1024 Hz, covering some 80 octaves. The narrow channel from 430 THz to 750 THz would be entirely negligible, except that more information is communicated to
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Untitled
Abstract: No abstract text available
Text: Agilent Millimeter-Wave Network Analyzers 10 MHz to 110 GHz, with Extensions to 1.1 THz Technical Overview Single Sweep 10 MHz to 110 GHz Measurement Solution Agilent currently offers the N5251A single sweep 10 MHz to 110 GHz vector network analyzer solution.
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N5251A
N5227A
N5261A
N5262A
BP-01-15-14)
5989-7620EN
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83732A
Abstract: No abstract text available
Text: Keysight Technologies Signal Generator Selection Guide Introduction Keysight Technologies, Inc. offers the widest selection of signal generators from baseband to 67 GHz, with frequency extensions to 1.1 THz. From basic to advanced functionality, each signal generator delivers benchmark performance
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cdma2000Â
BP-07-10-14)
5990-9956EN
83732A
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Untitled
Abstract: No abstract text available
Text: V23845-A/Bwxyz * 40 Channel MUX/DEMUX with Internal Temperature Controller Preliminary 6 11.5 Dimensions in mm ±0.2 mm 0.64 2.54 (Typ) 120 37.5 6.50 40 50 1 2 3 4 5 6 7 8 9 10 5 M2.5 / 5 Depth (4x) 5 110 Types of Components MUX DEMUX-LL DEMUX-FT C-Band (first channel 192.0 THz)
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V23845-A/Bwxyz(
V23845-
UL-94
D-13623,
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GR-1209
Abstract: No abstract text available
Text: V23845-D/Mwxyz * 40 Channel MUX/DEMUX Preliminary 6 18 Dimensions in mm ±0.2 mm 0.64 x 0.64 2.54 (Typ) 11 to pin #1 11 to pin #1 . #10 Ø 2.90 (4x) 87 79 1 2 3 4 5 6 7 8 9 10 122 130 Types of Components MUX DEMUX-LL DEMUX-FT C-Band (first channel 192.0 THz)
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V23845-D/Mwxyz(
V23845-
D-13623,
GR-1209
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GR-1209
Abstract: INFINEON PIN
Text: V23845-D/Mwxyz * 40 Channel MUX/DEMUX Preliminary 6 18 Dimensions in mm ±0.2 mm 0.64 x 0.64 2.54 (Typ) 11 to pin #1 11 to pin #1 . #10 Ø 2.90 (4x) 87 79 1 2 3 4 5 6 7 8 9 10 122 130 Types of Components MUX DEMUX-LL DEMUX-FT C-Band (first channel 192.0 THz)
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V23845-D/Mwxyz(
V23845-
D-13623,
GR-1209
INFINEON PIN
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RTD PT-100
Abstract: GR-1209 MUX C-Band RTD CIRCUITS
Text: V23845-D/Mwxyz * 40 Channel MUX/DEMUX Preliminary 6 18 Dimensions in mm ±0.2 mm 0.64 x 0.64 2.54 (Typ) 11 to pin #1 11 to pin #1 . #10 Ø 2.90 (4x) 87 79 1 2 3 4 5 6 7 8 9 10 122 130 Types of Components MUX DEMUX-LL DEMUX-FT C-Band (first channel 192.0 THz)
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V23845-D/Mwxyz(
V23845-
D-13623,
RTD PT-100
GR-1209
MUX C-Band
RTD CIRCUITS
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interleaver corning
Abstract: THz sensor colorless AWG 4-channel oadm jdsu jdsu interleaver 877-550-JDSU IMC-CD5D02411 interleaver DWDM AWG
Text: Product Bulletin New 50/200 GHz Active Double-Stage Interleaver IMC Series The JDS Uniphase optical frequency interleaver can be used as a colorless demultiplexer when employed within a banded system architecture. With its input stream of eighty 50 GHz spaced
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IS66WVC2M16ALL
Abstract: CellularRAM 66WVC2M16ALL
Text: IS66WVC2M16ALL 32Mb Async/Page/Burst CellularRAM 1.5 Overview The IS66WVC2M16ALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device includes several
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IS66WVC2M16ALL
IS66WVC2M16ALL
32Mbit
-40oC
2Mx16
IS66WVC2M16ALL-7010BLI
IS66WVC2M16ALL-7008BLI
54-ball
CellularRAM
66WVC2M16ALL
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IS66WVC4M16ALL
Abstract: CellularRAM 66WVC4M16ALL
Text: IS66WVC4M16ALL IS67WVC4M16ALL 64Mb Async/Page/Burst CellularRAM 1.5 Overview The IS66WVC4M16ALL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device includes several
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IS66WVC4M16ALL
IS67WVC4M16ALL
64Mbit
-40oC
4Mx16
IS66WVC4M16ALL-7010BLI
IS66WVC4M16ALL-7008BLI
CellularRAM
66WVC4M16ALL
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IS66WVC1M16ALL
Abstract: CellularRAM 66WVC1M16ALL
Text: IS66WVC1M16ALL Advanced Information 16Mb Async/Page/Burst CellularRAM 1.5 Overview The IS66WVC1M16ALL is an integrated memory device containing 16Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 1M words by 16 bits. The device includes several
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IS66WVC1M16ALL
16Mbit
-40oC
1Mx16
IS66WVC1M16ALL-7013BLI
IS66WVC1M16ALL-7010BLI
IS66WVC1M16ALL-7008BLI
54-ball
CellularRAM
66WVC1M16ALL
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Untitled
Abstract: No abstract text available
Text: IS66WVC2M16ALL Preliminary Information 32Mb Async/Page/Burst CellularRAM 1.5 Overview The IS66WVC2M16ALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device includes several
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IS66WVC2M16ALL
32Mbit
-40oC
2Mx16
IS66WVC2M16ALL-7013BLI
IS66WVC2M16ALL-7010BLI
IS66WVC2M16ALL-7008BLI
54-ball
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IS66WVC409616ALL
Abstract: IS66WVC409616ALL-7013BLI
Text: IS66WVC409616ALL Advanced Information 64Mb Async/Page/Burst CellularRAM 1.5 Overview The IS66WVC409616ALL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device includes several
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IS66WVC409616ALL
64Mbit
-40oC
4Mx16
IS66WVC409616ALL-7013BLI
IS66WVC409616ALL-7010BLI
IS66WVC409616ALL-7008BLI
54-ball
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IS66WVC4M16ALL-7010BLI
Abstract: No abstract text available
Text: IS66WVC4M16ALL 64Mb Async/Page/Burst CellularRAM 1.5 Overview The IS66WVC4M16ALL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device includes several
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IS66WVC4M16ALL
IS66WVC4M16ALL
64Mbit
-40oC
4Mx16
IS66WVC4M16ALL-7010BLI
IS66WVC4M16ALL-7008BLI
54-ball
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IS66WVC2M16DALL
Abstract: CellularRAM 66WVC2M16DALL
Text: IS66WVC2M16DALL 32Mb Async/Page/Burst CellularRAM 1.5 Overview The IS66WVC2M16DALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device includes several
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IS66WVC2M16DALL
IS66WVC2M16DALL
32Mbit
-40oC
2Mx16
IS66WVC2M16DALL-7013BLI
IS66WVC2M16DALL-7010BLI
IS66WVC2M16DALL-7008BLI
54-ball
CellularRAM
66WVC2M16DALL
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Untitled
Abstract: No abstract text available
Text: IS66WVC1M16ALL IS67WVC1M16ALL 16Mb Async/Page/Burst CellularRAM 1.5 Overview The IS66WVC1M16ALL and IS67WVC1M16ALL is an integrated memory device containing 16Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 1M words by 16 bits. The device
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IS66WVC1M16ALL
IS67WVC1M16ALL
IS66WVC1M16ALL
IS67WVC1M16ALL
16Mbit
-40oC
1Mx16
IS66WVC1M16ALL-7013BLI
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Untitled
Abstract: No abstract text available
Text: IS66WVC4M16ALL Preliminary Information 64Mb Async/Page/Burst CellularRAM 1.5 Overview The IS66WVC4M16ALL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device includes several
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IS66WVC4M16ALL
64Mbit
-40oC
4Mx16
IS66WVC4M16ALL-7013BLI
IS66WVC4M16ALL-7010BLI
IS66WVC4M16ALL-7008BLI
54-ball
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is66wvc4m16all
Abstract: No abstract text available
Text: IS66WVC4M16ALL Advanced Information 64Mb Async/Page/Burst CellularRAM 1.5 Overview The IS66WVC4M16ALL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device includes several
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IS66WVC4M16ALL
64Mbit
-40oC
4Mx16
IS66WVC4M16ALL-7013BLI
IS66WVC4M16ALL-7010BLI
IS66WVC4M16ALL-7008BLI
54-ball
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Untitled
Abstract: No abstract text available
Text: IS66WVC204816ALL Advanced Information 32Mb Async/Page/Burst CellularRAM 1.5 Overview The IS66WVC204816ALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device includes several
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IS66WVC204816ALL
32Mbit
-40oC
2Mx16
IS66WVC204816ALL-7013BLI
IS66WVC204816ALL-7010BLI
IS66WVC204816ALL-7008BLI
54-ball
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jdsu interleaver
Abstract: 877-550-JDSU IMC-C05D02411 DWDM AWG AWG, 100 GHz, Wideband jds demux
Text: Product Bulletin New 50/100 GHz Active Interleavers IMC Series The JDS Uniphase optical frequency interleaver offers wide bandwidth and flat top response, making the product useful for wide passband multiplexing and demultiplexing applications. As a multiplexer, the interleaver combines two streams
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transistor d514
Abstract: No abstract text available
Text: Preliminary UtRAM2 K1C6416B2E 64Mb 4M x 16 bit UtRAM2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K1C6416B2E
transistor d514
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UtRAM Density
Abstract: No abstract text available
Text: K1C3216B2E UtRAM2 32Mb 2M x 16 bit UtRAM2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN
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K1C3216B2E
UtRAM Density
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