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    THP 163 W Search Results

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    SNJ54163W Texas Instruments Synchronous 4-Bit Counters 16-CFP -55 to 125 Visit Texas Instruments Buy

    THP 163 W Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3EG264M64EFSU-D4 ADVANCED* 1GB – 2x64Mx64 DDR SDRAM, UNBUFFERED, FBGA FEATURES DESCRIPTION Fast data transfer rate: PC-2100, PC-2700 and PC3200 The W3EG264M64EFSU is a 2x64Mx64 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM


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    PDF W3EG264M64EFSU-D4 2x64Mx64 PC-2100, PC-2700 PC3200 W3EG264M64EFSU 512Mb 64Mx8 128Mx64

    DM 024

    Abstract: DDR2 SODIMM SPD JEDEC PC3200 DDR2 SDRAM Unbuffered SO-DIMM Reference DDR266 DDR333 DDR400 PC3200 W3EG264M64EFSU-D4
    Text: White Electronic Designs W3EG264M64EFSU-D4 ADVANCED* 1GB – 2x64Mx64 DDR SDRAM, UNBUFFERED, FBGA FEATURES DESCRIPTION Fast data transfer rate: PC-2100, PC-2700 and PC3200 The W3EG264M64EFSU is a 2x64Mx64 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM


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    PDF W3EG264M64EFSU-D4 2x64Mx64 PC-2100, PC-2700 PC3200 W3EG264M64EFSU 512Mb 64Mx8 200MHz DM 024 DDR2 SODIMM SPD JEDEC PC3200 DDR2 SDRAM Unbuffered SO-DIMM Reference DDR266 DDR333 DDR400 PC3200 W3EG264M64EFSU-D4

    DM 024

    Abstract: DDR266 DDR333 DDR400 PC3200 W3EG264M64EFSU-D4
    Text: White Electronic Designs W3EG264M64EFSU-D4 PRELIMINARY* 1GB – 2x64Mx64 DDR SDRAM, UNBUFFERED, FBGA FEATURES DESCRIPTION „ Fast data transfer rate: PC-2100, PC-2700 and PC3200 „ Clock speeds of 133 MHz, 166 MHz and 200MHz „ Supports ECC error detection and correction


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    PDF W3EG264M64EFSU-D4 2x64Mx64 PC-2100, PC-2700 PC3200 W3EG264M64EFSU 512Mb 64Mx8 200MHz DM 024 DDR266 DDR333 DDR400 PC3200 W3EG264M64EFSU-D4

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL470L6523-B3SG REV: 1.0 General Information 512MB 64Mx64 DDR SDRAM NON-ECC UNBUFFERED SODIMM 200-PIN Description The VL470L6523 is a 64Mx64 Double Data Rate SDRAM high density SODIMM. This single rank memory module consists of eight CMOS 64Mx8 bits with 4 banks Synchronous DRAMs in TSOP-II 400 mil packages and a 2K


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    PDF VL470L6523-B3SG 512MB 64Mx64 200-PIN VL470L6523 64Mx8 200-pin 200-pin,

    DM 024

    Abstract: DDR400 PC3200 DDR266 DDR333 512mb sodimm pc2700 200 pin samsung
    Text: White Electronic Designs W3EG264M72EFSUxxxD4 ADVANCED* 1GB – 2x64Mx72 DDR SDRAM, UNBUFFERED, FBGA FEATURES DESCRIPTION Fast data transfer rate: PC-2100, PC-2700 and PC3200 The W3EG264M72EFSU is a 2x64Mx72 Double Data Rate SDRAM memory module based on 512Mb DDR


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    PDF W3EG264M72EFSUxxxD4 2x64Mx72 PC-2100, PC-2700 PC3200 W3EG264M72EFSU 512Mb 64Mx8 200MHz DM 024 DDR400 PC3200 DDR266 DDR333 512mb sodimm pc2700 200 pin samsung

    VL470L2925-B3SG

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL470L2925-B3SG REV: 1.0 General Information 1GB 128Mx64 DDR SDRAM NON-ECC UNBUFFERED SODIMM 200-PIN Description The VL470L2925 is a 128Mx64 Double Data Rate SDRAM high density SODIMM. This dual rank memory module consists of sixteen CMOS 64Mx8 bits with 4 banks Synchronous DRAMs in BGA packages and a 2K EEPROM in an


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    PDF VL470L2925-B3SG 128Mx64 200-PIN VL470L2925 64Mx8 200-pin 200-pin, VL470L2925-B3SG

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL470L2925-R3SG REV: 1.0 General Information 1GB 128Mx64 DDR SDRAM NON-ECC UNBUFFERED SODIMM 200-PIN Description The VL470L2925 is a 128Mx64 Double Data Rate SDRAM high density SODIMM. This dual rank memory module consists of sixteen CMOS 64Mx8 bits with 4 banks Synchronous DRAMs in BGA packages and a 2K EEPROM in an


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    PDF VL470L2925-R3SG 128Mx64 200-PIN VL470L2925 64Mx8 200-pin 200-pin,

    DDR266

    Abstract: DDR333 DDR400 PC3200
    Text: White Electronic Designs W3EG264M72EFSUxxxD4 ADVANCED* 1GB - 2x64Mx72 DDR SDRAM, UNBUFFERED, FBGA FEATURES DESCRIPTION Fast data transfer rate: PC-2100, PC-2700 and PC3200 The W3EG264M72EFSU is a 2x64Mx72 Double Data Rate SDRAM memory module based on 512Mb DDR


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    PDF W3EG264M72EFSUxxxD4 2x64Mx72 PC-2100, PC-2700 PC3200 W3EG264M72EFSU 512Mb 64Mx8 200MHz DDR266 DDR333 DDR400 PC3200

    DDR266

    Abstract: DDR333 DDR400 PC3200
    Text: White Electronic Designs W3EG264M72EFSUxxxD4 ADVANCED* 1GB – 2x64Mx72 DDR SDRAM, UNBUFFERED, FBGA FEATURES DESCRIPTION „ Fast data transfer rate: PC-2100, PC-2700 and PC3200 „ Clock speeds of 133 MHz, 166 MHz and 200MHz „ Supports ECC error detection and correction


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    PDF W3EG264M72EFSUxxxD4 2x64Mx72 PC-2100, PC-2700 PC3200 W3EG264M72EFSU 512Mb 64Mx8 200MHz DDR266 DDR333 DDR400 PC3200

    thp 163 w

    Abstract: No abstract text available
    Text: White Electronic Designs W3EG6462S-D3 ADVANCED* 512MB 2x32Mx64 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION Double-data-rate architecture The W3EG6462S is a 2x32Mx64 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM components. The module consists of sixteen 32Mx8 DDR


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    PDF W3EG6462S-D3 512MB 2x32Mx64 DDR200, DDR266, DDR333 DDR400 512MB- 64Mx64, thp 163 w

    me 4953

    Abstract: 64MX64 PC2100 PC2700 DTH power supply circuit diagram
    Text: Product Specifications PART NO: VL368L6523E-B3S/A2S/B0S REV: 1.1 General Information 512MB 64MX64 DDR SDRAM NON-ECC UNBUFFERED DIMM 184-PIN Description: The VL368L6523E is a 64M X 64 Double Data Rate SDRAM high density unbuffered DIMM. This memory module consists of 8 CMOS 64Mx8 bit with 4 banks Synchronous DRAMs in TSOP-II 400 mil packages and a 2K EEPROM in 8-pin TSSOP package. This module is a 184-pin Dual In-line Memory Module and


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    PDF VL368L6523E-B3S/A2S/B0S 512MB 64MX64 184-PIN VL368L6523E 64Mx8 184-pin me 4953 PC2100 PC2700 DTH power supply circuit diagram

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO: VL368L6523E-B3S/A2S/B0S REV: 1.1 General Information 512MB 64MX64 DDR SDRAM NON-ECC UNBUFFERED DIMM 184-PIN Description: The VL368L6523E is a 64M X 64 Double Data Rate SDRAM high density unbuffered DIMM. This memory module consists of 8 CMOS 64Mx8 bit with 4 banks Synchronous DRAMs in TSOP-II 400 mil packages and a 2K EEPROM in 8-pin TSSOP package. This module is a 184-pin Dual In-line Memory Module and


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    PDF VL368L6523E-B3S/A2S/B0S 512MB 64MX64 184-PIN VL368L6523E 64Mx8 184-pin

    DD266

    Abstract: DDR333 PC2700
    Text: Product Specifications PART NO: REV: VL383L2923E-B3S/A2S/B0S 1.3 General Information 1GB 128MX72 DDR SDRAM ECC REGISTERED DIMM 184-PIN Description: The VL383L2923E is a 128M X 72 Double Data Rate SDRAM high density registered DIMM. This memory module consists of 18 CMOS 64Mx8 bit with 4 banks DDR Synchronous DRAMs in TSOP-II 400 mil


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    PDF VL383L2923E-B3S/A2S/B0S 128MX72 184-PIN VL383L2923E 64Mx8 184-pin DQ0-DQ63 DD266 DDR333 PC2700

    DDR200

    Abstract: DDR266 DDR333 DDR400 W3EG6462S-D3
    Text: W3EG6462S-D3 -JD3 White Electronic Designs ADVANCED* 512MB 2x32Mx64 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION Double-data-rate architecture The W3EG6462S is a 2x32Mx64 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM components. The module consists of sixteen 32Mx8 DDR


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    PDF W3EG6462S-D3 512MB 2x32Mx64 W3EG6462S 256Mb 32Mx8 DDR200, DDR266, DDR333 DDR200 DDR266 DDR400 W3EG6462S-D3

    DDR200

    Abstract: DDR266 DDR333 DDR400 W3EG6462S-D3
    Text: W3EG6462S-D3 -JD3 White Electronic Designs ADVANCED* 512MB 2x32Mx64 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION Double-data-rate architecture The W3EG6462S is a 2x32Mx64 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM components. The module consists of sixteen 32Mx8 DDR


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    PDF W3EG6462S-D3 512MB 2x32Mx64 W3EG6462S 256Mb 32Mx8 DDR200, DDR266, DDR333 DDR200 DDR266 DDR400 W3EG6462S-D3

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3HG264M64EEU-D4 ADVANCED* 1GB – 2x64Mx64 DDR2 SDRAM SO-DIMM UNBUFFERED FEATURES DESCRIPTION „ 200-pin, dual in-line memory module SO-DIMM . Raw card "E" „ Fast data transfer rates: PC2-6400, PC2-5300, PC2-4200 and PC2-3200 „


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    PDF W3HG264M64EEU-D4 2x64Mx64 200-pin, PC2-6400, PC2-5300, PC2-4200 PC2-3200 18-compatible) 800Mbs

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO: REV: VL383L6523E-B3S/A2S/B0S 1.1 General Information 512MB 64MX72 LOW PROFILE DDR SDRAM ECC REGISTERED DIMM 184-PIN Description: The VL383L6523E is a 64M X 72 Double Data Rate SDRAM high density registered DIMM. This memory module consists of 9 CMOS 64Mx8 bit with 4 banks DDR Synchronous DRAMs in TSOP-II 400 mil


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    PDF VL383L6523E-B3S/A2S/B0S 512MB 64MX72 184-PIN VL383L6523E 64Mx8 184-pin

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO: REV: VL383L2923E-B3S/A2S/B0S 1.3 General Information 1GB 128MX72 DDR SDRAM ECC REGISTERED DIMM 184-PIN Description: The VL383L2923E is a 128M X 72 Double Data Rate SDRAM high density registered DIMM. This memory module consists of 18 CMOS 64Mx8 bit with 4 banks DDR Synchronous DRAMs in TSOP-II 400 mil


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    PDF VL383L2923E-B3S/A2S/B0S 128MX72 184-PIN VL383L2923E 64Mx8 184-pin

    Untitled

    Abstract: No abstract text available
    Text: SODIMM DDR2 SDRAM DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 1Gb C-die 64-bit Non-ECC 60FBGA with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


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    PDF 200pin 64-bit 60FBGA 128Mbx8 256Mx64 M470T5663CZ3 K4T1G084QC

    me 4953

    Abstract: DDR266 DDR333 PC2700
    Text: Product Specifications PART NO: REV: VL383L6523E-B3S/A2S/B0S 1.1 General Information 512MB 64MX72 LOW PROFILE DDR SDRAM ECC REGISTERED DIMM 184-PIN Description: The VL383L6523E is a 64M X 72 Double Data Rate SDRAM high density registered DIMM. This memory module consists of 9 CMOS 64Mx8 bit with 4 banks DDR Synchronous DRAMs in TSOP-II 400 mil


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    PDF VL383L6523E-B3S/A2S/B0S 512MB 64MX72 184-PIN VL383L6523E 64Mx8 184-pin me 4953 DDR266 DDR333 PC2700

    Untitled

    Abstract: No abstract text available
    Text: WED3EG7232S-AD4 -BD4 White Electronic Designs PRELIMINARY* 256MB 32Mx72 DDR SDRAM UNBUFFERED w/PLL FEATURES DESCRIPTION Double-data-rate architecture The WED3EG7232S is a 32Mx72 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM components. The module consists of nine 32Mx8 DDR


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    PDF WED3EG7232S-AD4 256MB 32Mx72 DDR200, DDR266 DDR300 32Mx72, 333MHz

    Untitled

    Abstract: No abstract text available
    Text: W3EG6462S-D3 -JD3 White Electronic Designs ADVANCED* 512MB 2x32Mx64 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION Double-data-rate architecture The W3EG6462S is a 2x32Mx64 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM components. The module consists of sixteen 32Mx8 DDR


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    PDF W3EG6462S-D3 512MB 2x32Mx64 W3EG6462S 256Mb 32Mx8 DDR200, DDR266, DDR333

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3HG2128M64EEU-D4 2GB – 2x128Mx64 DDR2 SDRAM SO-DIMM UNBUFFERED FEATURES DESCRIPTION „ Unbuffered 200-pin, dual in-line memory module SO-DIMM . Raw card "E". „ Fast data transfer rates: PC2-6400, PC2-5300, PC2-4200 and PC2-3200


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    PDF W3HG2128M64EEU-D4 2x128Mx64 200-pin, PC2-6400, PC2-5300, PC2-4200 PC2-3200 18-compatible) 800Mb/s

    MMIC A06

    Abstract: No abstract text available
    Text: mL'EM P A C K A R D Thp\ HEW LETT- Cascadable Silicon Bipolar MMIC Amplifiers Technical Data MSA-0700 Features • Cascadable 50 Q Gain Block • Low Operating Voltage: 4.0 V Typical Vd • 3 dB Bandwidth: DC to 2.5 GHz • 13.0 dB Typical Gain at 1.0 GHz


    OCR Scan
    PDF MSA-0700 MSA-0700 5965-9589E MMIC A06