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    DD266 Price and Stock

    Diodes Incorporated 2DD2661-13

    TRANS NPN 12V 2A SOT89-3
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    DigiKey 2DD2661-13 Reel 2,500
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    Newark 2DD2661-13 Cut Tape 5
    • 1 $0.423
    • 10 $0.327
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    Eaton Cutler-Hammer QDD266A12-01B1

    Sensor Harness,12" Bus, no Sol, discharge |Eaton Cutler Hammer QDD266A12-01B1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark QDD266A12-01B1 Bulk 1
    • 1 $60.18
    • 10 $55.98
    • 100 $43.13
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    DD266 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    DD266 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF

    DD266 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    400B

    Abstract: DDR2-400 DDR2-533 DDR667 HYB18T512 HYB18T512160AF HYB18T512400AF HYB18T512800AF HYB18T512400AF5
    Text: D a t a S he et , Rev. 1.3, J a n. 2 00 5 HYB18T512400AF HYB18T512800AF HYB18T512160AF 512-Mbit DDR2 SDRAM DDR2 SDRAM RoHS Compliant Products M e m or y P r o du c t s N e v e r s t o p t h i n k i n g . Edition 2005-01 Published by Infineon Technologies AG,


    Original     		PDF HYB18T512400AF HYB18T512800AF HYB18T512160AF 512-Mbit 09112003-SDM9-IQ3P 400B DDR2-400 DDR2-533 DDR667 HYB18T512 HYB18T512160AF HYB18T512400AF HYB18T512800AF HYB18T512400AF5

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Rev. 1.4, Aug. 2005 HYB18T256400AF L HYB18T256800AF(L) HYB18T256160AF(L) 256-Mbit DDR2 SDRAM DDR2 SDRAM RoHS Compliant Products Memory Products N e v e r s t o p t h i n k i n g . Edition 2005-08 Published by Infineon Technologies AG, St.-Martin-Strasse 53,


    Original     		PDF HYB18T256400AF HYB18T256800AF HYB18T256160AF 256-Mbit 09112003-LZPT-I17F

    Untitled

    Abstract: No abstract text available
    Text: HYB25D128800T L 128-Mbit Double Data Rate SDRAM Preliminary Datasheet 2002-04-26 Features CAS Latency and Frequency CAS Latency 2 2.5 Maximum Operating Frequency (MHz) DDR200 DDR266B DDR266A DDR333 -8 -7.5 -7 -6 100 100 133 133 125 133 143 166 • Double data rate architecture: two data transfers


    Original     		PDF HYB25D128800T 128-Mbit DDR200 DDR266B DDR266A DDR333

    DDR2 SDRAM component data sheet

    Abstract: HYB18TC1G160AF HYB18TC1G800AF
    Text: September 2006 HYB18T C1G 80 0 AF HYB18T C1G 16 0 AF 1-Gbit DDR2 SDRAM DDR2 SDRAM RoHS Compliant Internet Data Sheet Rev. 1.11 Internet Data Sheet HYB18TC1G[80/16]0AF 1-Gbit DDR2 SDRAM HYB18TC1G800AF, HYB18TC1G160AF Revision History: 2006-09, Rev. 1.11 Page


    Original     		PDF HYB18T HYB18TC1G HYB18TC1G800AF, HYB18TC1G160AF HYB18TC1G800AF-5, HYB18TC1G800AF-3 HYB18TC1G800AF-3S, HYB18TC1G160AF-5, HYB18TC1G160AF-3 DDR2 SDRAM component data sheet HYB18TC1G160AF HYB18TC1G800AF

    DDR2-667C

    Abstract: No abstract text available
    Text: January 2007 HYB18T256400AF L HYB18T256800AF(L) HYB18T256160AF(L) 256-Mbit DDR2 SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.41 Internet Data Sheet HYB18T256[40/80/16]0AF(L)–[2.5/25F/3/3S/3.7/5] 256-Mbit DDR2 SDRAM HYB18T256400AF(L), HYB18T256800AF(L), HYB18T256160AF(L)


    Original     		PDF HYB18T256400AF HYB18T256800AF HYB18T256160AF 256-Mbit HYB18T256 5/25F/3/3S/3 DDR2-667C

    Untitled

    Abstract: No abstract text available
    Text: January 2007 HYB18T1G400AF L HYB18T1G800AF(L) HYB18T1G160AF DRAMs for Mobile Applications DDR2 SDRAM 256-MBit Mobile-RAM R oH S c o mp l i a nt Internet Data Sheet R ev . 1 . 31 Internet Data Sheet, HYB18T1G[40/80/16]0AF(L)–[3S/3.7/5] 1-Gbit DDR2 SDRAM


    Original     		PDF HYB18T1G400AF HYB18T1G800AF HYB18T1G160AF 256-MBit HYB18T1G

    128 MB DDR2 SDRAM

    Abstract: DDR SDRAM Controller paging policy DDR2 pin out 001B 010B 400B DDR2-533 HYB18T1G160AF HYB18T1G400AF HYB18T1G800AF
    Text: Data Sheet, Rev. 1.2, Nov. 2005 HYB18T1G400AF L HYB18T1G800AF(L) HYB18T1G160AF 1-Gbit DDR2 SDRAM DDR2 SDRAM RoHS Compliant Memory Products Edition 2005-11 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany Infineon Technologies AG 2005.


    Original     		PDF HYB18T1G400AF HYB18T1G800AF HYB18T1G160AF 09112003-7YZF-NH5G 128 MB DDR2 SDRAM DDR SDRAM Controller paging policy DDR2 pin out 001B 010B 400B DDR2-533 HYB18T1G160AF

    HYB18TC256160AF-3.7

    Abstract: 001B 010B 400B DDR2-533 DDR2-667 HYB18TC256160AF
    Text: Data Sheet, Rev. 1.0, Jul. 2005 HYB18TC256160AF HYB18TC256160AF 256-Mbit DDR2 SDRAM DDR2 SDRAM RoHS Compliant Products Memory Products N e v e r s t o p t h i n k i n g . Edition 2005-07 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany


    Original     		PDF HYB18TC256160AF 256-Mbit 07212005-A7MT-J7NM HYB18TC256160AF-3.7 001B 010B 400B DDR2-533 DDR2-667 HYB18TC256160AF

    4 inputs OR gate truth table

    Abstract: cdi dc/dc resistor 100 Ohm DATA SHEET ci 741 DDR2 pin out free download transistor data sheet 5 inputs OR gate truth table 6 pin cdi data sheet 741 tRAS.MAX is calculated from the maximum amount
    Text: Internet Data Sheet, Rev. 1.3, May 2006 HYB18T1G400AF L HYB18T1G800AF(L) HYB18T1G160AF 1-Gbit DDR2 SDRAM DDR2 SDRAM RoHS Compliant Memory Products Edition 2006-05 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany Infineon Technologies AG 2006.


    Original     		PDF HYB18T1G400AF HYB18T1G800AF HYB18T1G160AF 03292006-1X3H-6X8S 4 inputs OR gate truth table cdi dc/dc resistor 100 Ohm DATA SHEET ci 741 DDR2 pin out free download transistor data sheet 5 inputs OR gate truth table 6 pin cdi data sheet 741 tRAS.MAX is calculated from the maximum amount

    Untitled

    Abstract: No abstract text available
    Text: HYB25D128400/800/160AT L 128-Mbit Double Data Rate SDRAM Features CAS Latency and Frequency CAS Latency 2 2.5 Maximum Operating Frequency (MHz) DDR200 DDR266A DDR333 -8 -7 -6 100 133 133 125 143 166 • Double data rate architecture: two data transfers per clock cycle


    Original     		PDF HYB25D128400/800/160AT 128-Mbit DDR200 DDR266A DDR333

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO: REV: VL383L2923E-B3S/A2S/B0S 1.3 General Information 1GB 128MX72 DDR SDRAM ECC REGISTERED DIMM 184-PIN Description: The VL383L2923E is a 128M X 72 Double Data Rate SDRAM high density registered DIMM. This memory module consists of 18 CMOS 64Mx8 bit with 4 banks DDR Synchronous DRAMs in TSOP-II 400 mil


    Original     		PDF VL383L2923E-B3S/A2S/B0S 128MX72 184-PIN VL383L2923E 64Mx8 184-pin

    HYB18T512400AF5

    Abstract: No abstract text available
    Text: D a t a S h e e t , Rev. 1.4, J u n . 2 0 0 5 HYB18T512400AF HYB18T512800AF HYB18T512160AF 512-Mbit DDR2 SDRAM DDR2 SDRAM RoHS Compliant Products Memory Products N e v e r s t o p t h i n k i n g . Edition 2005-06 Published by Infineon Technologies AG, St.-Martin-Strasse 53,


    Original     		PDF HYB18T512400AF HYB18T512800AF HYB18T512160AF 512-Mbit 09112003-SDM9-IQ3P HYB18T512400AF5

    Untitled

    Abstract: No abstract text available
    Text: HYB25D128400/800/160AT L 128-Mbit Double Data Rate SDRAM Features CAS Latency and Frequency CAS Latency 2 2.5 Maximum Operating Frequency (MHz) DDR200 DDR266A DDR333 -8 -7 -6 100 133 133 125 143 166 • Double data rate architecture: two data transfers per clock cycle


    Original     		PDF HYB25D128400/800/160AT 128-Mbit DDR200 DDR266A DDR333

    HYB18T512

    Abstract: HYB18T512160AF HYB18T512400AF HYB18T512800AF DDR2-667C HYB18T512 density HYB18T512800AF3S
    Text: January 2007 HYB18T512400AF L HYB18T512800AF(L) HYB18T512160AF(L) 512-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.71 Internet Data Sheet HYB18T512[40/80/16]0AF(L)–[3/3S/3.7/5] 512-Mbit DDR2 SDRAM HYB18T512400AF(L), HYB18T512800AF(L), HYB18T512160AF(L)


    Original     		PDF HYB18T512400AF HYB18T512800AF HYB18T512160AF 512-Mbit HYB18T512 DDR2-667C HYB18T512 density HYB18T512800AF3S

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Rev. 1.3, Jun. 2005 HYB18T256400AF HYB18T256800AF HYB18T256160AF 256-Mbit DDR2 SDRAM DDR2 SDRAM RoHS Compliant Products Memory Products N e v e r s t o p t h i n k i n g . Edition 2005-06 Published by Infineon Technologies AG, St.-Martin-Strasse 53,


    Original     		PDF HYB18T256400AF HYB18T256800AF HYB18T256160AF 256-Mbit 09112003-LZPT-I17F

    HYB18TC512160AF

    Abstract: HYB18TC512 001B 010B 400B HYB18TC512160AF-3S HYB18TC512160
    Text: D a t a S h e e t , Rev. 1.0, J u l . 2 0 0 5 HYB18TC512160AF HYB18TC512800AF 512-Mbit DDR2 SDRAM DDR2 SDRAM RoHS Compliant Products Memory Products N e v e r s t o p t h i n k i n g . Edition 2005-07 Published by Infineon Technologies AG, St.-Martin-Strasse 53,


    Original     		PDF HYB18TC512160AF HYB18TC512800AF 512-Mbit 07222005-NJB0-GBOT HYB18TC512160AF HYB18TC512 001B 010B 400B HYB18TC512160AF-3S HYB18TC512160

    128 MB DDR2 SDRAM

    Abstract: 6331-1 DDR2 pin out HYB18T512800AF 001B 400B HYB18T512 HYB18T512160AF HYB18T512400AF
    Text: Data Sheet, Rev. 1.6, Aug. 2005 HYB18T512400AF L HYB18T512800AF(L) HYB18T512160AF(L) 512-Mbit DDR2 SDRAM DDR2 SDRAM RoHS Compliant Products Memory Products N e v e r s t o p t h i n k i n g . Edition 2005-08 Published by Infineon Technologies AG, St.-Martin-Strasse 53,


    Original     		PDF HYB18T512400AF HYB18T512800AF HYB18T512160AF 512-Mbit 09112003-SDM9-IQ3P 128 MB DDR2 SDRAM 6331-1 DDR2 pin out 001B 400B HYB18T512

    Untitled

    Abstract: No abstract text available
    Text: PD 9.1663 International IOR Rectifier IR F R /U 9310 PRELIMINARY HEXFET Power MOSFET • • • • • • P-Channel Surface Mount IRFR9310 Straight Lead (IRFU9310) Advanced Process Technology Fast Switching Fully Avalanche Rated Voss = -400V R D S (on) = 7 .0 Q


    OCR Scan     		PDF IRFR9310) IRFU9310) -400V O-251AA 0D26B20

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


    OCR Scan     		PDF MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp

    st178

    Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
    Text: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment


    OCR Scan     		PDF Sylvan58MC 09A001-00 66X0003-001 50746A 68X0003 68X0003-001 T-E0137 93B3-3 93B3-4 st178 diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor