MMBD2104
Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a
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BAS32,
BAS45,
BAV105
LL4148,
LL4448
BB241
BB249
LL914
LL4150,
MMBD2104
Transistor NEC 05F
hp2835 diode
ZENER DIODE t2d
what is the equivalent of ZTX 458 transistor
MMBD2103
T2D DIODE 3w
T2D 8N
2n2222 as equivalent for bfr96
mmbf4932
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MMBD2103
Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.
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BZV49
BZV55
500mW
BAS32,
BAS45,
BAV105
LL4148,
LL4448
BB241
BB249
MMBD2103
ZENER DIODE t2d
MMBD2101
MMBD2102
MMBD2104
SMD codes
bc107 TRANSISTOR SMD CODE PACKAGE SOT23
Transistor NEC 05F
BAT15-115S
NDS358N
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SMD Codes
Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.
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BZV49
BZV55
500mW
BAS32,
BAS45,
BAV105
LL4148,
LL4448
BB241
BB249
SMD Codes
TRANSISTOR SMD T1P
MMBD2104
BAW92
smd transistor A6a
schottky diode s6 81A
a4s smd transistor
Transistor SMD a7s
transistor SMD P2F
MMBD2101
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TFK diodes
Abstract: TFK 03 diodes TFK BPW 83 IR diodes TFK 4 IR diodes TFK BPW 41 N Vishay DaTE CODE tantal tfk s 220 TFK BPW 24 TFK BPW 75 2.5/TFK BPW 83
Text: VISHAY Vishay Semiconductors Tape and Reel Standards IR Emitters Vishay Semiconductors offers T-1 3 mm and T-13/4 (5 mm) LEDs, IR emitters and detectors packaged on tape. The following specification is based on IEC publication 286, taking into account the industrial requirements for automatic insertion.
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T-13/4
14-Aug-03
TFK diodes
TFK 03 diodes
TFK BPW 83
IR diodes TFK 4
IR diodes TFK BPW 41 N
Vishay DaTE CODE tantal
tfk s 220
TFK BPW 24
TFK BPW 75
2.5/TFK BPW 83
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smd code book
Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ
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OD-80
OD123/323
OT-23,
OT346
OT-323,
OT-416
OT-223,
OT-89
OT-143,
OT-363
smd code book
transistor SMD P1f
marking code W16 SMD Transistor
TRANSISTOR SMD MARKING CODE jg
smd transistor WW1
Transistor SMD a7s
DIODE SMD L4W
smd diode zener code pj 78
smd transistor wv4
Motorola transistor smd marking codes
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SGLA36AT0600
Abstract: SGHA36AT0600 GE TFK Breakers SELA36AT0100 SGHA36AT0400 TFK4 Cable GEH-5591 SKHA36AT1200 skla36at0800 sfla36at0250
Text: Molded Case Circuit Breakers Molded Case Circuit Breakers – Features .3-2 Spectra RMS Circuit Breakers with MicroVersaTrip Plus Trip Units – Features .3-3 Molded Case Circuit Breakers – Quick Reference Guide .3-4
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480/277V
SGLA36AT0600
SGHA36AT0600
GE TFK Breakers
SELA36AT0100
SGHA36AT0400
TFK4 Cable
GEH-5591
SKHA36AT1200
skla36at0800
sfla36at0250
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TFK 082
Abstract: J1 TRANSISTOR
Text: ß tfk c m 1 m a n A M P com pany Wireless Bipolar Power Transistor, 12W PH1617-12N 1.6-1.7 GHz y/b Features £4 /7 '25 • • • • • • • ( 18 . 4 2 ) NPN Silicon M icrow ave P ow er T ran sisto r D esigned fo r L inear A m plifier A pplications
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PH1617-12N
TT50M
TFK 082
J1 TRANSISTOR
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TFK 680 CNY 70
Abstract: 7447n BTP-128-400 ITT TCA 700 Y btp 128 550 74151n Katalog CEMI SFC2741DC 4BYP250-400 TFK 227
Text: NAUKOWO-PRODUKCYJNE CENTRUM PÒLPRZEWODNIKÓW CEMI ELEMENTY PÓtPRZEWODNIKOWE I UKtADY SCALONE USTA PREFERENCYJNA 1982/84 Warszawa 1982 WPROWADZENIE LISTA PREFEREMCYJNA zawiera wykaz podzespolów kowanych aktualnle, przewldzianych do produkcji w w ramach urnów specjallzacyjnych 1 kooperacyjnych.
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TFK 450 B2
Abstract: tfk bcy 59 TFK 79 tfk bcy 58 BCY79 BCY790 75558 BCY78 BCY 59
Text: BCY 78 • BCY 79 'W Silizium-PNP-Epitaxial-Planar-Transistoren Silicon PNP Epitaxial Planar Transistors Anwendungen: Allgem ein und NF-Verstärker Applications: General and AF am plifiers Besondere Merkmale: Features: • Verlustleistung 1 W • Power dissipation 1 W
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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TFK diodes BYW 76
Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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Tfk 880
Abstract: No abstract text available
Text: CUSTOM POW ER TRANSFO RM ERS TRANSFORMERS FOR SWITCHING POWER SUPPLIES W Utilizes latest core materials and shape factor to provide smallest possible volume and minimum PC board footprint for effective manufacturing cost reduction. These transform ers are available in standard size /power rating from 25 to 880
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20kHz-300kHz
Ratings-70
200VA
atings-70
300VA
000VAC
3500VAC
Tfk 880
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BF314
Abstract: tfk 248 TFK 29 16go TFK 4 314 TFK 450 ic251 TFK 175 TRANSISTOR K 314 BF 251
Text: BF 314 'W Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: VHF-Eingangsstufen in Basisschaltung Applications: VHF input stages in com m on base configuration Besondere Merkmale: Feafures: • Kleine R ückwirkungskapazität
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tfk bay 78
Abstract: No abstract text available
Text: 01310102010001000131010001020100010201 NOTES SEE SH 1. , 29.21 1 , ,± ™ > . 27,94 BAY A 24 POSTIONS BAY B 23 POSITIONS BAY C 42 POSITIONS n n n n n n n n n n n n n n n n n n n n n n¡n 0 n n n n n n n n n n n n n n n n n n n n n n i i 310100010001000131013101310102010001310131013101
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ELF120GSC-3Z50
ELF120G5C-3Z50
ELF12DG5C-3Z50
D3-13-96
5E964-73
tfk bay 78
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c 337 25
Abstract: NPN 337 bc 170 c BC 337 bc 170 BC338 bc337 bc 338 npn bc 337 AF200
Text: BC 337 * BC 338 Silizium-NPN-Epitaxial-Planar-NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: T reiber und Endstufen Applications: D river and p o w e r stages Features: Besondere Merkmale: • Verlustleistung 625 mW • In G ruppen so rtie rt
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MZMA
Abstract: DBC10G DBF10E DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE DBF20TG
Text: DBC10G DBF10B DBF10C DBF10E DBF10G DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE DBF20TG DBF40B DBF40C DBF40E DBF40G DBF40TC DBF40TE DBF40TG DBF60B : nÉra âm i 1 n* DBF60C DBF60E DBF60G DBF60TC DBF60TE mmSSimm » , J m in im u m DBF60TG DCA25B DCA25C DCA25E
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DBC10G
DBF10E
DBF20B
DBF20C
DBF20E
DD25F-20
DD25F-40
DD25F-60
DD25F-80
DD30GB-40
MZMA
DBF10E
DBF20B
DBF20G
DBF20TC
DBF20TE
DBF20TG
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MZMA
Abstract: OC 170 DBC10G DBF10E DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE
Text: DBC10G DBF10B DBF10C DBF10E DBF10G DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE DBF20TG DBF40B DBF40C DBF40E DBF40G DBF40TC DBF40TE DBF40TG DBF60B : nÉra âm i 1 n* DBF60C DBF60E DBF60G DBF60TC DBF60TE mmSSimm » , J m in im u m DBF60TG DCA25B DCA25C DCA25E
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DBC10G
DBF10E
DBF20B
DBF20C
DBF20E
DD25F-20
DD25F-40
DD25F-60
DD25F-80
DD30GB-40
MZMA
OC 170
DBF10E
DBF20B
DBF20G
DBF20TC
DBF20TE
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transistor 2N4
Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION
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DIN 50014
Abstract: CQY80
Text: Optoelektronisches Koppelelement Optically Coupled Isolator Aufbau C o n stru ctio n Emitter: D etektor: GaAs-Lumineszenzdiode Silizium-NPN-Epitaxial-Planar-Fototransistor Anwendungen: Galvanische Trennung von Stromkreisen, rückwirkungsfreier Schalter A p p lic a tio n s :
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MZMA
Abstract: DBC10G DBF10E DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE DBF20TG
Text: DBC10G DBF10B DBF10C DBF10E DBF10G DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE DBF20TG DBF40B DBF40C DBF40E DBF40G DBF40TC DBF40TE DBF40TG DBF60B : nÉra âm i 1 n* DBF60C DBF60E DBF60G DBF60TC DBF60TE mmSSimm » , J m in im u m DBF60TG DCA25B DCA25C DCA25E
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DBC10G
DBF10E
DBF20B
DBF20C
DBF20E
DD25F-20
DD25F-40
DD25F-60
DD25F-80
DD30GB-40
MZMA
DBF10E
DBF20B
DBF20G
DBF20TC
DBF20TE
DBF20TG
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E80276
Abstract: No abstract text available
Text: TM200DZ/CZ/PZ-M,-H,-24,-2H ffl ü N c fij . 3-48 m 30159 m io m it TM200DZ/CZ/PZ-M,-H,-24,-2H m ± im IE 4Î V rrm V rsm V r dc V drm V dsm V d ( dc) fE •§• It ( rms) It ( av ) Itsm l?t d i/d t Pgm Pg ( av ) V fgm V rgm Ifgm Tj Tstg Viso - m g fc J -*# # à S U ÎW Œ
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TM200DZ/CZ/PZ-M
E80276
E80271
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EFT 373
Abstract: D25F10 DBF20E dbf40b DBF40TC DBC10G DBF10E DBF20B DBF20C DBF20G
Text: DBC10G DBF10B DBF10C DBF10E DBF10G DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE DBF20TG DBF40B DBF40C DBF40E DBF40G DBF40TC DBF40TE DBF40TG DBF60B : nÉra âm i 1 n* DBF60C DBF60E DBF60G DBF60TC DBF60TE mmSSimm » , J m in im u m DBF60TG DCA25B DCA25C DCA25E
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DBC10G
DBF10E
DBF20B
DBF20C
DBF20E
DD25F-60
DD25F-80
DD30GB-40
DD30GB-80
DD30HB-120
EFT 373
D25F10
dbf40b
DBF40TC
DBF10E
DBF20B
DBF20G
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RCA H 541
Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK
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