mil-c-24308
Abstract: D Type 37 way 15 pin d connector to 25 pin d sub D Type 9 way 9 pin d sub SOLDER 37 pin d type connector TT25FPR 37 pins D SUB connector D type 25 Way TT09M
Text: CONNECTORS D SUB-MINIATURE, Turned Pin TAICOM type TT INDUSTRIAL RANGE A wide range of industrial grade 'D' subminiature connectors, comprising of plugs, sockets and matching hoods from 9 to 50 way. Constructed to high manufacturer’s standards. Flame retardant glass filled polyester insulators and gold over nickel plated machined contacts are housed in tin
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MIL-C-24308
TT09MPR
TT15MPR
TT25MPR
TT37MPR
TT09FPR
TT15FPR
TT25FPR
TT37FPR
D Type 37 way
15 pin d connector to 25 pin d sub
D Type 9 way
9 pin d sub SOLDER
37 pin d type connector
TT25FPR
37 pins D SUB connector
D type 25 Way
TT09M
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NPN microwave power transistor 865
Abstract: omni spectra sma ATC100A PH2323-1 Noryl 1075
Text: PH2323-1 CW Power Transistor 1W, 2.3 GHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • • • • • • • NPN silicon microwave power transistor Common base configuration Class C operation Interdigitated geometry Diffused emitter ballasting resistors
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PH2323-1
NPN microwave power transistor 865
omni spectra sma
ATC100A
PH2323-1
Noryl 1075
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transistor 1005 oj
Abstract: transistor power rating 5w ATC100A PH3135-5S PIN07
Text: M tiK O V . J r an A M P com pany Radar Pulsed Power Transistor, 5W, 2^s Pulse, 10% Duty 3.1 - 3.5 GHz PH3135-5S V2.00 . .900 Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry
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PH3135-5S
ATC100A
transistor 1005 oj
transistor power rating 5w
ATC100A
PH3135-5S
PIN07
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6010.5
Abstract: TT50M50A a2024a
Text: L3E D 5b422D5 0000031 OMT HAP MICROW AVE PULSED POWER TRANSISTOR PH1214-2.0M PRELIMINARY REV. NC 05/05/92 n/A-con p h M/A-COM PHI, INC. o DESIGN CHARACTERISTICS 100 uS Pulse Operation Broadband 1.2 - 1 . 4 GHz Operation Common Base Configuration Gold Metallization System
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5b422D5
PH1214-2
A2024A
6010Metallization
ATC100A
TT50M50A.
6010.5
TT50M50A
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2052-5636-02
Abstract: No abstract text available
Text: m an A M P com pany Radar Pulsed Power Transistor, 20W, 100^is Pulse, 10% Duty 3 .1 -3 .5 GHz PH3135-20M Features • NI’ N S ilic o n M ic r o w a v e P o w e r T r a n s is t o r • C o m m o n B a s e C o n fig u r a t io n • B r o a d b a n d C la ss C O p e r a t io n
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PH3135-20M
TT50M50A
ATC100A
2052-5636-02
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RF NPN POWER TRANSISTOR 3 GHZ 5w
Abstract: No abstract text available
Text: Æ an A M P com t pan y Radar Pulsed Power Transistor, 5W, 2|is Pulse, 10% Duty 3.1 - 3.5 GHz PH3135-5S V 2 .0 0 Features • • • • • • • • NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry
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PH3135-5S
TT50M50A
ATC100A
RF NPN POWER TRANSISTOR 3 GHZ 5w
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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TFK 082
Abstract: J1 TRANSISTOR
Text: ß tfk c m 1 m a n A M P com pany Wireless Bipolar Power Transistor, 12W PH1617-12N 1.6-1.7 GHz y/b Features £4 /7 '25 • • • • • • • ( 18 . 4 2 ) NPN Silicon M icrow ave P ow er T ran sisto r D esigned fo r L inear A m plifier A pplications
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PH1617-12N
TT50M
TFK 082
J1 TRANSISTOR
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transistor 9232
Abstract: No abstract text available
Text: A ti« O M w a n A M P com pany Radar Pulsed Power Transistor, 10W, 100ns Pulse, 10% Duty 3.1-3.4 GHZ PH3134-10M Features • • • • • • • • b/y :14 4B> NPN Silicon M icrow ave Pow er T ran sisto r C o m m o n Base C onfig u ratio n B ro a d b an d Class C O p e ra tio n
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100ns
PH3134-10M
ATC100A
transistor 9232
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Untitled
Abstract: No abstract text available
Text: w an A M P com pany Radar Pulsed Power Transistor, 5W, 2 j.s Pulse, 10% Duty 3 .1 -3 .5 GHz PH3135-5S 7JJ Features H i, • N P N S ilic o n M ic r o w a v e P o w e r T r a n s is to r • C o m m o n Base C o n fig u r a tio n • B ro a d b a n d C lass C O p e r a t io n
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PH3135-5S
TT50M50A
ATC100A
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P55i
Abstract: J14-35
Text: ^ Ä C O fl m an A M P com pany Radar Pulsed Power Transistor, 8.5W, 100|xs Pulse, 10% Duty 2.7 - 2.9 GHz PH2729-8.5M V2.00 Features • • • • • • • • NPN Silicon M icrow ave Pow er T ran sisto r C o m m o n Base C on fig u ratio n B ro a d b an d Class C O p e ratio n
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PH2729-8
P55i
J14-35
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T160
Abstract: T-160 transistor b 595
Text: an A M P com pany Linear Accelerator Pulsed Power Transistor, 160W, 12^s Pulse, 10% Duty 2.856 GHz P H 2 8 5 6 -1 6 0 Features • • • • • • • • yoo 22 Bk> NPN Silicon M icrow ave P ow er T ran sisto r C o m m o n Base C onfig u ratio n Class C O p e ratio n
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TT50M50A
ATC100A
T160
T-160
transistor b 595
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transistor c655
Abstract: 9225 npn transistor RF NPN POWER TRANSISTOR 3 GHZ 5w transistor power rating 5w TRANSISTOR A52 C655 13MM ATC100A PH2931-5M TT50
Text: AÚK.CA', M an A M P company Radar Pulsed Power Transistor, 5W, 100|is Pulse, 10% Duty 2.9-3.1 GHz PH2931-5M V2.00 Features • • • • • • • • ortn NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry
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100jis
PH2931-5M
ATC100A
transistor c655
9225 npn transistor
RF NPN POWER TRANSISTOR 3 GHZ 5w
transistor power rating 5w
TRANSISTOR A52
C655
13MM
ATC100A
PH2931-5M
TT50
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ST 9241
Abstract: No abstract text available
Text: M m antA ccompany o ti AMP Radar Pulsed Power Transistor, 30W, 1ns Pulse, 10% Duty 3.1-3.4 GHz PH3134-30S V2.00 Features • • • • • • • • CrV ÜC> NPN Silicon M icrow ave P o w er T ransistor C o m m o n Base C on figu ration B roadban d C lass C O p eratio n
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PH3134-30S
TT50M50A
ATC100A
ST 9241
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Untitled
Abstract: No abstract text available
Text: Afa Satellite Communications Power Transistor PH 1600-30 30 Watts, 1.55-1.65 GHz Features • • • • • Outline Drawing C W Operation Internal Impedance Matching Common Base Configuration Multilayer Metal / Ceramic Package Gold Metallization System Absolute Maximum Ratings at 25°C
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TT50M
ATC100A
5bM220S
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2052-5636-02
Abstract: TIC 122 Transistor J3 transistor tic 122 13MM ATC100A PH3135-25S RF NPN POWER TRANSISTOR 3 GHZ 4 ghz transistor
Text: yM Ü KO VI m an AM P company Radar Pulsed Power Transistor, 25W, 2jxs Pulse, 10% Duty 3.1 - 3.5 GHz PH3135-25S V2.00 Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry
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PH3135-25S
not81
TT50M50A
ATC100A
2052-5636-02
TIC 122 Transistor
J3 transistor
tic 122
13MM
ATC100A
PH3135-25S
RF NPN POWER TRANSISTOR 3 GHZ
4 ghz transistor
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Untitled
Abstract: No abstract text available
Text: an A M P company Radar Pulsed Power Transistor, 135W, 20jis Pulse, 1% Duty 2.9 - 3.1 GHz PH2931 -135S • • • • • • • • V2.00 suo üfe Features NPN Silicon P ow er T ran sisto r C o m m o n Base C onfiguration B ro a d b an d Class C O p e ra tio n
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20jis
PH2931
-135S
TT50M50A
ATC100A
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Untitled
Abstract: No abstract text available
Text: M a n A M P com pany Radar Pulsed Power Transistor, 4W, 100p.s Pulse, 10% Duty 1.2-1.4 GHz PH1214-4M Features • • • • • • • • NPN Silicon M icrow ave Pow er Transistor C o m m o n Base C on figuration B roadban d Class C O p eratio n Interdigitated G eo m etry
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PH1214-4M
TT50M50A
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transistor 9206
Abstract: B 773 transistor
Text: j Mm anäA MCP comDpanyÜ Radar Pulsed Power Transistor, 25W, 100ns Pulse, 10% Duty 2.7 - 2.9 GHz PH2729-25M Features • N PN S ilic o n M ic ro w a v e P o w e r T r a n s is to r • C o m m o n B a se C o n fig u r a tio n • B r o a d b a n d C la s s C O p e r a tio n
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100ns
PH2729-25M
TT50MS0AGROUND
ATC100A
transistor 9206
B 773 transistor
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TRANSISTOR zo 109 ma
Abstract: transistor zo 109 transistor TI 310 Rogers 6010.5 PH2856
Text: Linear Accelerator Pulsed Power Transistor PH2856-22 22 Watts, 2.856 GHz, 12 jlis Pulse, 10% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor • Common Base Configuration • Class C Operation • High Efficiency Interdigitated Geometry
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PH2856-22
TT50M50A
ATC100A
TRANSISTOR zo 109 ma
transistor zo 109
transistor TI 310
Rogers 6010.5
PH2856
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Untitled
Abstract: No abstract text available
Text: MùkCfm W an A M P com pany Radar Pulsed Power Transistor, 20W, 300ns Pulse, 10% Duty 3.1 - 3.4 GHZ PH3134-20L Features • N I'N S ilic o n M ic ro w a v e P o w e r T r a n s is to r • C o m m o n B a se C o n fig u r a tio n • B ro a d b a n d C la s s C O p e r a tio n
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300ns
PH3134-20L
TT50M50A
ATC100A
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transistor c s z 44 v
Abstract: 6010.5
Text: A rfK C M m an A M P com pany Radar Pulsed Power Transistor, 25W, 2|is Pulse, 10% Duty 3.1 - 3.5 GHz PH3135-25S Features • • • • • • • • NPN Silicon M icrow ave P o w er T ransistor C o m m o n Base C on figuration B roadban d C lass C O p eratio n
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PH3135-25S
TT50M50A
ATC100A
730503S8-03
transistor c s z 44 v
6010.5
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Untitled
Abstract: No abstract text available
Text: / M ik o m an A M P com pany Radar Pulsed Power Transistor, 11W, 1^s Pulse, 10% Duty 3.1-3.4 GHz PH3134-11S V2 00 9^0 c?U 8J> Features ,5/J • • • • • • • • NPN Silicon M icrow ave Pow er T ran sisto r C o m m o n Base C on fig u ratio n B ro a d b an d Class C O p e ra tio n
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PH3134-11S
ATC100A
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transistor 81 110 w 65
Abstract: 13MM ATC100A PH3135-20M transistor 81 33 145J1
Text: MÙKOV, W an A M P company Radar Pulsed Power Transistor, 20W, 100|is Puise, 10% Duty 3.1-3.5 GHz PH3135-20M V2.00 Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry
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10Ojas
PH3135-20M
TT50M50A
ATC100A
transistor 81 110 w 65
13MM
ATC100A
PH3135-20M
transistor 81 33
145J1
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