Untitled
Abstract: No abstract text available
Text: 2N3700+JANTX Transistors Si NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)140 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)175õ I(CBO) Max. (A).01uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2N3700
Freq100M
req100M
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Untitled
Abstract: No abstract text available
Text: 2N3700+JANS Transistors Si NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)140 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)175õ I(CBO) Max. (A).01uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2N3700
Freq100M
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N3700+JAN Transistors Si NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)140 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)175õ I(CBO) Max. (A).01uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2N3700
Freq100M
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N3700+JANTXV Transistors Si NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)140 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)175õ I(CBO) Max. (A).01uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2N3700
Freq100M
eq100M
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Transistor
Abstract: NPN transistor 310 2N2907A transistor d 571
Text: SENSITRON SEMICONDUCTOR 1998 • SHORT FORM CATALOG - Revision SMALL SIGNAL TRANSISTORS SING LE. G E N E R A L PU R PO SE T R A N S ISTO R S. SU R FA C E M OUNT TRANSISTOR TYPE TYPE NUMBER COLLECTOR TO EMITTER BREAKDOWN VOLTAGE TEST FREQUENCY @ COLLECTOR CURRENT
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OCR Scan
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SHD4311
SHD4312
SHD4313
SHD4314
2N2907A
2N2222A
2N3700
2N3501
SHD4461
SHD4462
Transistor
NPN transistor 310
transistor d 571
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PDF
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Untitled
Abstract: No abstract text available
Text: MSR2N3700 Qualified Levels: MSR Rad Hard Low Power NPN Silicon Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N3700 100 Krad 100 Krad DESCRIPTION This RHA level low power NPN switching transistor, 2N3700 device in a TO-206AA package,
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MSR2N3700
MIL-PRF-19500
2N3700
O-206AA
EEE-INST-002
T4-LDS-0340,
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Untitled
Abstract: No abstract text available
Text: MSR2N3700UB Screened Levels: MSR Rad Hard Low Power NPN Silicon Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N3700UB 100 Krad 100 Krad DESCRIPTION This RHA level low power NPN switching transistor, 2N3700 device in a UB and UBC package,
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MSR2N3700UB
MIL-PRF-19500
2N3700
EEE-INST-002
com28
T4-LDS-0340-1,
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N3700HR Hi-Rel 80 V, 1 A NPN transistor Datasheet - production data Features BVCEO 80 V IC max 1A HFE at 10 V - 150 mA >100 1 2 3 3 3 TO-18 4 1 1 2 2 LCC-3 UB Pin 4 in UB is connected to the metallic lid Figure 1. Internal schematic diagram • Hermetic packages
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2N3700HR
2N3700HR
MILPRF19500)
DocID15354
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N3700HR Hi-Rel 80 V, 1 A NPN transistor Datasheet - production data Features BVCEO 80 V IC max 1A HFE at 10 V - 150 mA >100 1 2 3 3 3 TO-18 4 1 1 2 2 LCC-3 UB Pin 4 in UB is connected to the metallic lid Figure 1. Internal schematic diagram • Hermetic packages
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Original
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2N3700HR
2N3700HR
MILPRF19500)
DocID15354
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PDF
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5201/002/05R
Abstract: No abstract text available
Text: 2N3700HR Hi-Rel 80 V, 1 A NPN transistor Datasheet - production data Features 1 BVCEO 80 V IC max 1A HFE at 10 V - 150 mA >100 2 3 3 3 TO-18 4 1 1 2 2 LCC-3 UB • Hermetic packages Pin 4 in UB is connected to the metallic lid Figure 1. Internal schematic diagram
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2N3700HR
2N3700HR
MILPRF19500)
DocID15354
5201/002/05R
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PDF
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JANSR2N3700UB
Abstract: ESCC
Text: 2N3700HR Hi-Rel 80 V, 1 A NPN transistor Datasheet - production data Features 1 BVCEO 80 V IC max 1A HFE at 10 V - 150 mA >100 2 3 3 3 TO-18 4 1 1 2 2 LCC-3 UB • Hermetic packages Pin 4 in UB is connected to the metallic lid Figure 1. Internal schematic diagram
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Original
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2N3700HR
2N3700HR
MILPRF19500)
DocID15354
JANSR2N3700UB
ESCC
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PDF
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2N3700UB
Abstract: 2N3700
Text: 2N3700UB Available on commercial versions Low Power NPN Silicon Transistor Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3700UB NPN ceramic surface mount device is military qualified for high-reliability
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Original
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2N3700UB
MIL-PRF-19500/391
2N3700UB
2N3700
MIL-PRF-19500/391.
O-206AA)
T4-LDS-0185-3,
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N3700UB Available on commercial versions Low Power NPN Silicon Transistor Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3700UB NPN ceramic surface mount device is military qualified for high-reliability
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Original
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2N3700UB
MIL-PRF-19500/391
2N3700UB
2N3700
MIL-PRF-19500/391.
2N3700UB.
T4-LDS-0185-3,
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PDF
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test 2N3700
Abstract: 2n3019 equivalent
Text: 2N3700 Available on commercial versions Low Power NPN Silicon Transistor Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3700 NPN transistor comes in a hermetically sealed metal TO-18 package and is military qualified for high-reliability applications.
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Original
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2N3700
MIL-PRF-19500/391
2N3700
MIL-PRF-19500/391.
O-206AA)
T4-LDS-0185-2,
test 2N3700
2n3019 equivalent
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PDF
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2N3700CSM
Abstract: 2N3700 test 2N3700
Text: 2N3700CSM HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad. (0.012) • HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE)
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2N3700CSM
2N3700
2N3700CSM
test 2N3700
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PDF
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2n3700dcsm
Abstract: No abstract text available
Text: 2N3700DCSM HIGH VOLTAGE, MEDIUM POWER, NPN DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 1.40 ± 0.15 (0.055 ± 0.006) 2 3 1 4 A 6 5 6.22 ± 0.13
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2N3700DCSM
2n3700dcsm
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PDF
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2N3700
Abstract: No abstract text available
Text: 2N3700 HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches 5 .8 4 (0 .2 3 0 ) 5 .3 1 (0 .2 0 9 ) 5 .3 3 (0 .2 1 0 ) 4 .3 2 (0 .1 7 0 ) 4 .9 5 (0 .1 9 5 ) 4 .5 2 (0 .1 7 8 ) ) 1 7 2 1 . . (
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2N3700
2N3700
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N3700HR Hi-Rel 80 V, 1 A NPN transistor Datasheet - production data Features BVCEO 80 V IC max 1A HFE at 10 V - 150 mA >100 1 2 3 3 3 TO-18 4 1 1 2 2 LCC-3 LCC-3UB Pin 4 in LCC-3UB is connected to the metallic lid Figure 1. Internal schematic diagram • Hermetic packages
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2N3700HR
2N3700HR
DocID15354
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PDF
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2n3700
Abstract: JTX 2N3019S 2N3700UB 2N3019 2N3700 JAN 2n3057a
Text: TECHNICAL DATA 2N3019 JAN, JTX, JTXV 2N3019S JAN, JTX, JTXV 2N3057A JAN, JTX, JTXV 2N3700 JAN, JTX, JTXV 2N3700UB JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/391 2N3019, 2N3019S TO-39 TO-205AD LOW-POWER NPN SILICON TRANSISTORS MAXIMUM RATINGS
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2N3019
2N3019S
2N3057A
2N3700
2N3700UB
MIL-PRF-19500/391
2N3019;
JTX 2N3019S
2N3700 JAN
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PDF
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2n3700 geometry
Abstract: 2N3700 DIE
Text: 2N3700 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3700J • JANTX level (2N3700JX)
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2N3700
MIL-PRF-19500
2N3700J)
2N3700JX)
2N3700JV)
2N3700JS)
MIL-STD-750
MIL-PRF-19500/391
2n3700 geometry
2N3700 DIE
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PDF
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2N3700 DIE
Abstract: No abstract text available
Text: 2N3700 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 • JAN level 2N3700J • JANTX level (2N3700JX) • JANTXV level (2N3700JV)
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Original
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2N3700
MIL-PRF-19500
2N3700J)
2N3700JX)
2N3700JV)
2N3700JS)
2N3700JSR)
MIL-STD-750
MIL-PRF-19500/391
2N3700 DIE
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PDF
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2N3700UBJS
Abstract: No abstract text available
Text: 2N3700UB Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3700UBJ • JANTX level (2N3700UBJX)
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2N3700UB
MIL-PRF-19500
2N3700UBJ)
2N3700UBJX)
2N3700UBJV)
2N3700UBJS)
2N3700UBJSR)
MIL-STD-750
MIL-PRF-19500/391
2N3700UBJS
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PDF
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2n3700ub
Abstract: 2N3700UBJS 2N3700UBJ 2N3700UBJX
Text: 2N3700UB Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3700UBJ • JANTX level (2N3700UBJX)
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2N3700UB
MIL-PRF-19500
2N3700UBJ)
2N3700UBJX)
2N3700UBJV)
2N3700UBJS)
MIL-STD-750
MIL-PRF-19500/391
2n3700ub
2N3700UBJS
2N3700UBJ
2N3700UBJX
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PDF
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2n3019
Abstract: 2N3700 2N3700UB 2n3019 equivalent 2N3019S JTX 2N3019S 2N3057A 600C 2N3019S JAN
Text: TECHNICAL DATA 2N3019 JAN, JTX, JTXV, JANS 2N3019S JAN, JTX, JTXV, JANS 2N3057A JAN, JTX, JTXV, JANS 2N3700 JAN, JTX, JTXV, JANS 2N3700UB JAN, JTX, JTXV, JANS Processed per MIL-PRF-19500/391 Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
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2N3019
2N3019S
2N3057A
2N3700
2N3700UB
MIL-PRF-19500/391
2N3019;
2N3019S
2N3057A
2N3700
2n3019 equivalent
JTX 2N3019S
600C
2N3019S JAN
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