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    TCKMIN Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TCKMIN Xilinx XC1800 Series of In-System Programmable Configuration PROMs Original PDF

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    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: M2S1G64CBH4B5P / M2S2G64CB88B5N / M2S4G64CB8HB5N 1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64 PC3-8500 / PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Based on DDR3-1066/1333/1600 128Mx16 1GB / 256Mx8 (2GB) / 256Mx8 (4GB) SDRAM B-Die Features •Performance:


    Original     		PDF M2S1G64CBH4B5P M2S2G64CB88B5N M2S4G64CB8HB5N PC3-8500 PC3-10600 PC3-12800 DDR3-1066/1333/1600 128Mx16 256Mx8

    DDR200

    Abstract: DDR266A DDR266B IBMN612404GT3B IBMN612804GT3B IBMN62540 IBMN62580 128MB PC266
    Text: IBMN612404GT3B IBMN612804GT3B 128Mb Double Data Rate Synchronous DRAM Preliminary Features CAS Latency and Frequency CAS Latency 2 2.5 Maximum Operating Frequency MHz * DDR266A (7N) DDR266B (75N) DDR200 (8N) 133 143 100 133 100 125 * Values are nominal (exact tCK should be used).


    Original     		PDF IBMN612404GT3B IBMN612804GT3B 128Mb DDR266A DDR266B DDR200 06K0566 F39350B DDR200 DDR266A DDR266B IBMN612404GT3B IBMN612804GT3B IBMN62540 IBMN62580 128MB PC266

    AN6019

    Abstract: PAC10 1GM1
    Text: ispPAC 10 Features Functional Block Diagram • IN-SYSTEM PROGRAMMABLE ISP ANALOG CIRCUIT — Four Instrument Amplifier Gain/Attenuation Stages — Signal Summation (Up to 4 Inputs) — Precision Active Filtering (10kHz to 100kHz) — No External Components Needed for Configuration


    Original     		PDF 10kHz 100kHz) 550kHz 330kHz -74dB 10kHz) 28-Pin AN6019 PAC10 1GM1

    NT5TU128M8DE

    Abstract: NT5TU64M16DG nt5tu64m16dg-Bd NT5TU128M8DE-BD NT5TU256M4DE nt5tu64m NT5TU64M16 NT5TU64M16DG-3C NT5TU64M16DG-3CI NT5TU64M16DG-BE
    Text: NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG NT5TB256M4DE / NT5TB128M8DE / NT5TB64M16DG 1Gb DDR2 SDRAM Feature CAS Latency Frequency -37B/-37BI -3C/-3CI -AD/-ADI -AC/-ACI/-ACL -BE -BD DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 DDR2-1066 4-4-4 5-5-5 6-6-6


    Original     		PDF NT5TU256M4DE NT5TU128M8DE NT5TU64M16DG NT5TB256M4DE NT5TB128M8DE NT5TB64M16DG -37B/-37BI DDR2-533 DDR2-667 DDR2-800 NT5TU64M16DG nt5tu64m16dg-Bd NT5TU128M8DE-BD nt5tu64m NT5TU64M16 NT5TU64M16DG-3C NT5TU64M16DG-3CI NT5TU64M16DG-BE

    nt5tu128m8de-ac

    Abstract: NT5TU64M16DG-AD NT5TU128M8DE-AD NT5TU256M4DE NT5TU128M8DE NT5TU64M16DG NT5TU64M16DG-3C Nanya NT5TU64M16DG
    Text: NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG 1Gb DDR2 SDRAM Preliminary Edition Features CAS Latency and Frequency Speed Sorts -37B DDR2 -533 -3C DDR2 -667 -AD DDR2 -800 -AC DDR2 -800 Units Bin CL-tRCD-TRP 4-4-4 5-5-5 6-6-6 5-5-5 tck max. Clock Frequency 266


    Original     		PDF NT5TU256M4DE NT5TU128M8DE NT5TU64M16DG nt5tu128m8de-ac NT5TU64M16DG-AD NT5TU128M8DE-AD NT5TU64M16DG NT5TU64M16DG-3C Nanya NT5TU64M16DG

    NT1GC72B89A0NF

    Abstract: 128MX8 nanya 2gb DDR3 DIMM NT2GC72B8PA0NF-CG ddr3 PCB footprint NT2GC72B8PA0NF Nanya DDR3 DDR3 DIMM footprint DDR3 udimm jedec PC3-10600
    Text: NT1GC72B89A0NF / NT2GC72B8PA0NF NT1GC72B89A1NF / NT2GC72B8PA1NF 1GB: 128M x 72 / 2GB: 256M x 72 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM with ECC Based on DDR3-1066/1333 128Mx8 SDRAM A-Die Features •Performance: Speed Sort DIMM CAS Latency fck – Clock Freqency


    Original     		PDF NT1GC72B89A0NF NT2GC72B8PA0NF NT1GC72B89A1NF NT2GC72B8PA1NF PC3-8500 PC3-10600 DDR3-1066/1333 128Mx8 PC3-8500 nanya 2gb DDR3 DIMM NT2GC72B8PA0NF-CG ddr3 PCB footprint NT2GC72B8PA0NF Nanya DDR3 DDR3 DIMM footprint DDR3 udimm jedec PC3-10600

    NT5TU32M16AG-37B

    Abstract: NT5TU128M4AE nt5tu64m8 nt5tu64m NT5TU32M16 NT5T nt5tu32m16ag nt5tu64m8af
    Text: NT5TU128M4AB/NT5TU128M4AE Green NT5TU64M8AF/NT5TU64M8AB/NT5TU64M8AE(Green) ) 512Mb DDR2 SDRAM Features • Write Latency = Read Latency -1 CAS Latency and Frequency • Programmable Burst Length: 4 and 8


    Original     		PDF NT5TU128M4AB/NT5TU128M4AE NT5TU64M8AF/NT5TU64M8AB/NT5TU64M8AE NT5TU32M16AF/NT5TU32M16AG /NT5TU32M16AS 512Mb NT5TU32M16AG-37B NT5TU128M4AE nt5tu64m8 nt5tu64m NT5TU32M16 NT5T nt5tu32m16ag nt5tu64m8af

    AN6027

    Abstract: AN6026 151m75
    Text: In-System Programmable Analog Circuit October 2002 Data Sheet Features Functional Block Diagram • Flexible Interface and Programming Control • • • • Full configuration capability, SPI or JTAG modes Unlimited device updates using SRAM register E2CMOS for non-volatile configuration storage


    Original     		PDF 15MHz 50kHz 600kHz) ispPAC30 28-Pin 24-Pin AN6027 AN6026 151m75

    NT5TU32M16CG-BD

    Abstract: NT5TU32M16CG-be NT5TU64M8CE
    Text: NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG 512Mb DDR2 SDRAM C-Die Features • 1.8V ± 0.1V Power Supply Voltage • Data-Strobes: Bidirectional, Differential • Programmable CAS Latency: 3,4,5,6 and 7 • 4 internal memory banks • Programmable Additive Latency: 0, 1, 2, 3, and 4


    Original     		PDF NT5TU128M4CE NT5TU64M8CE /NT5TU32M16CG 512Mb NT5TU32M16CG-BD NT5TU32M16CG-be

    16Mx8

    Abstract: pc133 SDRAM DIMM W9D332647LA-333 079R 32X64 32X64 144 pin
    Text: REVISIONS DATE REV I. DESCRIPTION: DESCRIPTION ZONE 6/29/01 LUISA T Ÿ W9D332647LA-333 is a 32Mx64 industry standard 168-pin PC-133 SDRAM DIMM Ÿ Manufactured with 16 16Mx8 400-mil TSOPII-54 PC-133 Synchronous DRAM devices of 12-row, 10-column, 4-bank addressing.


    Original     		PDF W9D332647LA-333 32Mx64 168-pin PC-133 16Mx8 400-mil TSOPII-54 12-row, 10-column, pc133 SDRAM DIMM 079R 32X64 32X64 144 pin

    222k

    Abstract: 079R PC-100 PC100-222 KO9018
    Text: REVISION DATE REV DESCRPTION ZONE APPVD 6/26/01 III. TIMING I. DESCRIPTION: Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ W9Q316727KD-222K is a 16Mx72 industry standard 168-pin PC100-222 SDRAM ECC DIMM Manufactured with 18 NEC ELPIDA 8Mx8 400-mil TSOPII-54 100 MHz Synchronous DRAM devices of 12-row, 9-column, 4 -bank addresing.


    Original     		PDF W9Q316727KD-222K 16Mx72 168-pin PC100-222 400-mil TSOPII-54 12-row, 8Mx72. W9Q316727KD-222K D9Q316727KD-222K 222k 079R PC-100 PC100-222 KO9018

    DDR200

    Abstract: DDR266A DDR266B IBMN62540 IBMN625404GT3B IBMN62580 IBMN625804GT3B
    Text: IBMN625404GT3B IBMN625804GT3B 256Mb Double Data Rate Synchronous DRAM Preliminary Features CAS Latency and Frequency CAS Latency Maximum Operating Frequency MHz * DDR266A (7N) DDR266B (75N) DDR200 (8N) 133 143 100 133 100 125 2 2.5 * Values are nominal (exact tCK should be used).


    Original     		PDF IBMN625404GT3B IBMN625804GT3B 256Mb DDR266A DDR266B DDR200 29L0011 E36997B DDR200 DDR266A DDR266B IBMN62540 IBMN625404GT3B IBMN62580 IBMN625804GT3B

    Untitled

    Abstract: No abstract text available
    Text: 240PIN DDR2 667 Fully Buffered DIMM 1GB With 64Mx8 CL5 TS128MFB72V6J-T Description MBIST and IBIST Test functions The TS128MFB72V6J-T is a 128M x 72bits DDR2-667 Hot add-on and Hot Remove Capability Fully Buffered DIMM. The TS128MFB72V6J-T consists of Transparent mode for DRAM test support


    Original     		PDF 240PIN 64Mx8 TS128MFB72V6J-T TS128MFB72V6J-T 72bits DDR2-667 18pcs 64Mx8its 240-pin

    Untitled

    Abstract: No abstract text available
    Text: TS128MFB72V6J-T 240PIN DDR2 667 Fully Buffered DIMM 1GB With 64Mx8 CL5 Description Hot add-on and Hot Remove Capability The TS128MFB72V6J-T is a 128M x 72bits DDR2-667 Transparent mode for DRAM test support Fully Buffered DIMM. The TS128MFB72V6J-T consists of


    Original     		PDF TS128MFB72V6J-T 240PIN 64Mx8 TS128MFB72V6J-T 72bits DDR2-667 18pcs 64Mx8its 240-pin

    Untitled

    Abstract: No abstract text available
    Text: W94AD6KB / W94AD2KB 1Gb Mobile LPDDR Table of Contents1. 2. 3. 4. 5. 6. 7. 8. GENERAL DESCRIPTION . 4 FEATURES . 4


    Original     		PDF W94AD6KB W94AD2KB A01-004

    Untitled

    Abstract: No abstract text available
    Text: Defense Grade Platform Flash In-System Programmable Configuration PROM DS541 v2.1 June 25, 2014 Product Specification Features • In-System Programmable PROM for Configuration of Xilinx FPGAs • I/O Pins Compatible with Voltage Levels Ranging From 1.8V to 3.3V


    Original     		PDF DS541 XQF32P

    dax6

    Abstract: Mobile SDRAM
    Text: V55C1256164MG 256Mbit MOBILE SDRAM 1.8 VOLT, TSOP II / FBGA PACKAGE 16M X 16 75 9 10 System Frequency fCK 133 MHz 111 MHz 100MHz Clock Cycle Time (tCK3) 7.5ns 9.0 ns 10 ns Clock Access Time (tAC3) CAS Latency = 3 6.0 ns 7.0 ns 8.0ns • Available in 54-ball FBGA (with 9x6 ball array


    Original     		PDF V55C1256164MG 256Mbit 100MHz dax6 Mobile SDRAM

    NT5CB64M16AP-CF

    Abstract: nt5cb64m16 NT5CB64M16AP-CG NT5CB64M16AP nanya NT5CB64M16AP NT5CB64m NT5CB64M16AP-BE nt5cb64m16ap-dh MPR 20 20 CF RESISTOR NT5CB64M16AP-AC
    Text: 1Gb DDR3 SDRAM A-Die NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP Feature  Write Leveling  1.5V ± 0.075V JEDEC Standard Power Supply  OCD Calibration  8 Internal memory banks (BA0- BA2)  Dynamic ODT (Rtt_Nom & Rtt_WR)  Differential clock input (CK, )


    Original     		PDF NT5CB256M4AN NT5CB128M8AN NT5CB64M16AP 60-Ball 84-Ball NT5CB64M16AP-CF nt5cb64m16 NT5CB64M16AP-CG NT5CB64M16AP nanya NT5CB64M16AP NT5CB64m NT5CB64M16AP-BE nt5cb64m16ap-dh MPR 20 20 CF RESISTOR NT5CB64M16AP-AC

    NT5TU256T8DY

    Abstract: 128 MB DDR2 SDRAM DDR2-667 DDR2-800 NT5TU256T8DY-3C
    Text: NT5TU512T4DY / NT5TU256T8DY 2Gb DDR2 SDRAM DDP Features • Programmable Additive Latency: 0, 1, 2, 3 and 4 CAS Latency and Frequency Speed Sorts DDR2-667 DDR2-800 DDR2-800 (-3C) (-AC) (-AD) Bin • Write Latency = Read Latency -1 Units • Programmable Burst Length: 4 and 8


    Original     		PDF NT5TU512T4DY NT5TU256T8DY DDR2-667 DDR2-800 DDR2-800 NT5TU256T8DY 128 MB DDR2 SDRAM NT5TU256T8DY-3C

    NT5TU64M16

    Abstract: NT5TU128M8BJ-3C NT5TU64M16BM nt5tu64m NT5TU128M8 128 MB DDR2 SDRAM 1GB DDR2 4 banks NT5TU256M4BJ
    Text: NT5TU256M4BJ / NT5TU128M8BJ / NT5TU64M16BM Green 1Gb DDR2 SDRAM Features CAS Latency and Frequency Speed Sorts -5A DDR2 -400 -37B DDR2 -533 -3C DDR2 -667 -25D DDR2 -800 Units Bin (CL-tRCD-TRP) 3-3-3 4-4-4 5-5-5 6-6-6 tck max. Clock Frequency 200 266 333 400


    Original     		PDF NT5TU256M4BJ NT5TU128M8BJ NT5TU64M16BM NT5TU64M16 NT5TU128M8BJ-3C nt5tu64m NT5TU128M8 128 MB DDR2 SDRAM 1GB DDR2 4 banks

    DS1032

    Abstract: POWR604
    Text: ispPAC -POWR604 Device Datasheet June 2010 All Devices Discontinued! Product Change Notification PCN #09-10 has been issued to discontinue all devices in this data sheet. The original datasheet pages have not been modified and do not reflect those changes.


    Original     		PDF -POWR604 ispPACPOWR604 ispPAC-POWR604-01T44I ispPAC-POWR604-01TN44I ispPAC-POWR604-01T44E ispPAC-POWR604-01TN44E ispPAC-POWR604 DS1032 POWR604

    VQFP44 package

    Abstract: isp Cable Version 3.0 VQ44 XQR18V04 XQVR1000 XQVR300 XQVR600 fpga radiation XQR2V1000 XQR18V04VQ44N
    Text: QPro XQR18V04 Radiation Hardened 4Mbit QML ISP Configuration Flash PROM R DS082 v1.4 December 15, 2003 5 Features • Description Operating Temperature Range: –55° C to +100° C MeV/cm2/mg • Latch-Up Immune to LET >120 • Guaranteed TID of 30 kRad(Si) per spec 1019.5


    Original     		PDF XQR18V04 DS082 CascadV04CC44M XQR18V04CC44V XQR18V04VQ44N XQ18V04. VQFP44 package isp Cable Version 3.0 VQ44 XQVR1000 XQVR300 XQVR600 fpga radiation XQR2V1000 XQR18V04VQ44N

    E3235

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE TC59WM815/07/03BFT-70,-75,-80 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDSX4BANKSX8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDSX4BANKSX4-BITS SYNCHRONOUS DYNAMIC RAM


    OCR Scan     		PDF TC59WM815/07/03BFT-70 304-WORDSX4BANKSX16-BITS 608-WORDSX4BANKSX8-BITS 216-WORDSX4BANKSX4-BITS TC59WM815BFT TC59WM807BFT TC59WM803BFT E3235

    P83C524

    Abstract: 80C51 P83C524FBA P83C524FBP P83C524FFA P83C524FFP P83C524FHP
    Text: P H IL IP S I N T E R N A T I O N A L bSE J> □ 7 1 1 D Ö 2 b D D b l 3 4 3 544 H P H I N Philips Preliminary specification 8-bit microcontroller P83C524 CONTENTS 15 INSTRUCTION SET 1 FEATURES


    OCR Scan     		PDF L1343 P83C524 P83C524 80C51 P83C524FBA P83C524FBP P83C524FFA P83C524FFP P83C524FHP