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    TC59SM816 Search Results

    TC59SM816 Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TC59SM816BFT-70 Toshiba 4,194,304 Words x 4 Banks x 16 Bits Synchronous Dynamic RAM Original PDF
    TC59SM816BFT-75 Toshiba 4,194,304 Words x 4 Banks x 16 Bits Synchronous Dynamic RAM Original PDF
    TC59SM816BFT-80 Toshiba 4,194,304 Words x 4 Banks x 16 Bits Synchronous Dynamic RAM Original PDF
    TC59SM816BFT/BFTL-70 Toshiba 4,194,304-WORDS x 4 BANKS x 16-BITS SYNCHRONOUS DYNAMIC RAM Original PDF
    TC59SM816BFT/BFTL-75 Toshiba 4,194,304-WORDS x 4 BANKS x 16-BITS SYNCHRONOUS DYNAMIC RAM Original PDF
    TC59SM816BFT/BFTL-80 Toshiba 4,194,304-WORDS x 4 BANKS x 16-BITS SYNCHRONOUS DYNAMIC RAM Original PDF
    TC59SM816BFTL-70 Toshiba 4,194,304 Words x 4 Banks x 16 Bits Synchronous Dynamic RAM Original PDF
    TC59SM816BFTL-75 Toshiba 4,194,304 Words x 4 Banks x 16 Bits Synchronous Dynamic RAM Original PDF
    TC59SM816CFT-70 Toshiba 4,194,304 Words x 4 Banks x 16 Bits Synchronous Dynamic RAM Original PDF
    TC59SM816CFT-75 Toshiba 4,194,304 Words x 4 Banks x 16 Bits Synchronous Dynamic RAM Original PDF
    TC59SM816CFT-80 Toshiba 4,194,304 Words x 4 Banks x 16 Bits Synchronous Dynamic RAM Original PDF
    TC59SM816CFTI-75 Toshiba 4,194,304 Words x 4 Banks x 16 Bits Synchronous Dynamic RAM Original PDF
    TC59SM816CFTI-80 Toshiba 4,194,304 Words x 4 Banks x 16 Bits Synchronous Dynamic RAM Original PDF
    TC59SM816CFTL-70 Toshiba 4,194,304 Words x 4 Banks x 16 Bits Synchronous Dynamic RAM Original PDF
    TC59SM816CFTL-75 Toshiba 4,194,304 Words x 4 Banks x 16 Bits Synchronous Dynamic RAM Original PDF
    TC59SM816CFTL-80 Toshiba 4,194,304 Words x 4 Banks x 16 Bits Synchronous Dynamic RAM Original PDF
    TC59SM816CMB-70 Toshiba 4,194,304 Word x 4 Banks x 16 Bit Synchronous Dynamic RAM Original PDF
    TC59SM816CMB-75 Toshiba 4,194,304 Word x 4 Banks x 16 Bit Synchronous Dynamic RAM Original PDF
    TC59SM816CMB-80 Toshiba 4,194,304 Word x 4 Banks x 16 Bit Synchronous Dynamic RAM Original PDF
    TC59SM816CMBL-70 Toshiba 4,194,304 Word x 4 Banks x 16 Bit Synchronous Dynamic RAM Original PDF

    TC59SM816 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TC59SM816

    Abstract: No abstract text available
    Text: TC59SM816/08/04BFT/BFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS x 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDS × 4 BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDS × 4 BANKS × 4-BITS SYNCHRONOUS DYNAMIC RAM


    Original     		PDF TC59SM816/08/04BFT/BFTL-70 304-WORDS 16-BITS 608-WORDS 216-WORDS TC59SM816BFT/BFTL TC59SM808BFT/BFTL TC59SM804BFT/BFTL TC59SM816

    133M

    Abstract: TC59SM816 TC59SM816CFTI-75
    Text: TC59SM816CFTI-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS x 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM DESCRIPTION TC59SM816CFTI is a CMOS synchronous dynamic random access memory organized as 4,194,304-words × 4


    Original     		PDF TC59SM816CFTI-75 304-WORDS 16-BITS TC59SM816CFTI 133M TC59SM816

    TFBGA60

    Abstract: TC59SM816
    Text: TC59SM816/08/04CMB/CMBL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS x 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDS × 4 BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDS × 4 BANKS × 4-BITS SYNCHRONOUS DYNAMIC RAM


    Original     		PDF TC59SM816/08/04CMB/CMBL-70 304-WORDS 16-BITS 608-WORDS 216-WORDS TC59SM816CMB/CMBL TC59SM808CMB/CMBL TC59SM804CMB/CMBL TFBGA60 TC59SM816

    TC59SM816

    Abstract: No abstract text available
    Text: TC59SM816/08/04BFT/BFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS x 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDS × 4 BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDS × 4 BANKS × 4-BITS SYNCHRONOUS DYNAMIC RAM


    Original     		PDF TC59SM816/08/04BFT/BFTL-70 304-WORDS 16-BITS 608-WORDS 216-WORDS TC59SM816BFT/BFTL TC59SM808BFT/BFTL TC59SM804BFT/BFTL TC59SM816

    Untitled

    Abstract: No abstract text available
    Text: TC59SM816/08/04CMB/CMBL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS x 4BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDS × 4BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDS × 4BANKS × 4-BITS SYNCHRONOUS DYNAMIC RAM


    Original     		PDF TC59SM816/08/04CMB/CMBL-70 304-WORDS 16-BITS 608-WORDS 216-WORDS

    TC59SM816

    Abstract: TSOPII54 04CFT
    Text: TC59SM816/08/04CFT/CFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS x 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDS × 4 BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDS × 4 BANKS × 4-BITS SYNCHRONOUS DYNAMIC RAM


    Original     		PDF TC59SM816/08/04CFT/CFTL-70 304-WORDS 16-BITS 608-WORDS 216-WORDS TC59SM816CFT/CFTL TC59SM808CFT/CFTL TC59SM804CFT/CFTL TC59SM816 TSOPII54 04CFT

    TC59SM816

    Abstract: No abstract text available
    Text: TC59SM816/08/04CFT/CFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS x 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDS × 4 BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDS × 4 BANKS × 4-BITS SYNCHRONOUS DYNAMIC RAM


    Original     		PDF TC59SM816/08/04CFT/CFTL-70 304-WORDS 16-BITS 608-WORDS 216-WORDS TC59SM816CFT/CFTL TC59SM808CFT/CFTL TC59SM804CFT/CFTL TC59SM816

    Untitled

    Abstract: No abstract text available
    Text: TC59SM816/08/04BFT/BFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS x 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDS × 4 BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDS × 4 BANKS × 4-BITS SYNCHRONOUS DYNAMIC RAM


    Original     		PDF TC59SM816/08/04BFT/BFTL-70 304-WORDS 16-BITS 608-WORDS 216-WORDS TC59SM816BFT/BFTL TC59SM808BFT/BFTL TC59SM804BFT/BFTL

    TC59SM816

    Abstract: No abstract text available
    Text: TC59SM816/08/04BFT/BFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS x 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDS × 4 BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDS × 4 BANKS × 4-BITS SYNCHRONOUS DYNAMIC RAM


    Original     		PDF TC59SM816/08/04BFT/BFTL-70 304-WORDS 16-BITS 608-WORDS 216-WORDS TC59SM816BFT/BFTL TC59SM808BFT/BFTL TC59SM804BFT/BFTL TC59SM816

    THLY12N11C70

    Abstract: No abstract text available
    Text: TOSHIBA THLY12N11C70,70L,75,75L,80,80L TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY12N11C is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM816CFT/CFTL DRAMs on a printed circuit board.


    OCR Scan     		PDF THLY12N11C70 216-WORD 64-BIT THLY12N11C TC59SM816CFT/CFTL 75/75L

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA THLY25N01 B70f70Lf75f75Lf80f80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY25N01B is a 33,554,432-word by 64-bit synchronous dynamic RAM module consisting of eight TC59SM816BFT/BFTL DRAMs on a printed circuit board.


    OCR Scan     		PDF THLY25N01 B70f70Lf75f75Lf80f80L THLY25N01B 432-word 64-bit TC59SM816BFT/BFTL

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA THMY12N11B70f75f80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY12N11B is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM816BFT DRAMs and an unbuffer on a printed circuit board.


    OCR Scan     		PDF THMY12N11B70f75f80 THMY12N11B 216-word 64-bit TC59SM816BFT 64-bit THMY12N11B)

    TC59SM816BFT

    Abstract: THMY12N11B70 EE4H
    Text: TO SH IBA THMY12N11B70f75f80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY12N11B is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM816BFT DRAMs and an unbuffer on a printed circuit board.


    OCR Scan     		PDF THMY12N11B70 216-WORD 64-BIT THMY12N11B TC59SM816BFT 64-bit EE4H

    DQ380-VW

    Abstract: DQ250-VW DQ380 dq380vw DQ380-V
    Text: THLY25N01 B70f70Lf75f75Lf80f80L TOSHIBA TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY25N01B is a 33,554,432-word by 64-bit synchronous dynamic RAM module consisting of eight TC59SM816BFT/BFTL DRAMs on a printed circuit board.


    OCR Scan     		PDF THLY25N01 432-WORD 64-BIT THLY25N01B TC59SM816BFT/BFTL DQ380-VW DQ250-VW DQ380 dq380vw DQ380-V

    THMY12N11C70

    Abstract: No abstract text available
    Text: TO SH IBA TH M Y12N 11C70f75f80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY12N11C is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM816CFT DRAMs and an unbuffer on a printed circuit board.


    OCR Scan     		PDF THMY12N11C70 216-WORD 64-BIT THMY12N11C TC59SM816CFT 64-bit

    DQ550-V

    Abstract: THLY25N01B70 m5m8
    Text: TOSHIBA THLY25N01 B70,70L,75,75L,80,80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY25N01B is a 33,554,432-word by 64-bit synchronous dynamic RAM module consisting of eight TC59SM816BFT/BFTL DRAMs on a printed circuit board.


    OCR Scan     		PDF THLY25N01 432-WORD 64-BIT THLY25N01B TC59SM816BFT/BFTL 75/75L DQ550-V THLY25N01B70 m5m8

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA THLY12N11B70,70L,75,75L,80,80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY12N11B is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM816BFT/BFTL DRAMs on a printed circuit board.


    OCR Scan     		PDF THLY12N11 216-WORD 64-BIT THLY12N11B TC59SM816BFT/BFTL 75/75L

    THMY12E11C70

    Abstract: No abstract text available
    Text: TO SH IBA THMY12E11C70f75f80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY12E11C is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 5 TC59SM816CFT DRAMs and an unbuffer on a printed circuit board.


    OCR Scan     		PDF THMY12E11C70 216-WORD 72-BIT THMY12E11C TC59SM816CFT 72-bit

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA THLY12N11C70,70L,75,75L,80,80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY12N11C is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM816CFT/CFTL DRAMs on a printed circuit board.


    OCR Scan     		PDF THLY12N11C70 216-WORD 64-BIT THLY12N11C TC59SM816CFT/CFTL 75/75L

    TC59SM816BFT

    Abstract: THMY12E11B70
    Text: TO SH IBA THMY12E11B70f75f80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY12E11B is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 5 TC59SM816BFT DRAMs and an unbuffer on a printed circuit board.


    OCR Scan     		PDF THMY12E11B70 216-WORD 72-BIT THMY12E11B TC59SM816BFT 72-bit

    THMY12N31C70

    Abstract: No abstract text available
    Text: TO SH IBA THMY12N31C70,75,80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY12N31C is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM816CFT DRAMs and an unbuffer on a printed circuit board.


    OCR Scan     		PDF THMY12N31C70 216-WORD 64-BIT THMY12N31C TC59SM816CFT 64-bit

    THLY25N01C70

    Abstract: No abstract text available
    Text: TOSHIBA THLY25N01C70,70L,75,75L,80,80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY25N01C is a 33,554,432-word by 64-bit synchronous dynamic RAM module consisting of eight TC59SM816CFT/CFTL DRAMs on a printed circuit board.


    OCR Scan     		PDF THLY25N01C70 432-WORD 64-BIT THLY25N01C TC59SM816CFT/CFTL 75/75L

    TC59SM816BFT

    Abstract: THMY12N11B70
    Text: TO SH IBA THMY12N11B70f75f80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY12N11B is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM816BFT DRAMs and an unbuffer on a printed circuit board.


    OCR Scan     		PDF THMY12N11B70 216-WORD 64-BIT THMY12N11B TC59SM816BFT 64-bit

    MB426

    Abstract: No abstract text available
    Text: TOSHIBA THLY12N11B70,70L,75,75L,80,80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY12N11B is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM816BFT/BFTL DRAMs on a printed circuit board.


    OCR Scan     		PDF THLY12N11B70 216-WORD 64-BIT THLY12N11B TC59SM816BFT/BFTL MB426