TC58F4000
Abstract: 58F4000
Text: TOSHIBA TC58F4000P/F/FT/TR-12, -15 PRELIMINARY SILICON STACKED GATE CMOS 524,288 WORD x 8 BIT CMOS FLASH ELECTRICALLY ERASABLE AND PROGRAMMABLE READ ONLY MEMORY Description The TC 58F4000P /F /FT 7TR is a 4 ,1 9 4 ,3 0 4 bit flash electrically erasable and p ro g ra m m a b le read only m e m o ry organized as
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TC58F4000P/F/FT/TR-12,
58F4000P
TC58F4000
58F4000
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TC5816FT
Abstract: TC5332410F TC5316200CP TC531621 TC5310
Text: CMOS Flash E2PROM Capacity 1MBit flash X6 Max. Power Dissipation mW Power Supply Max. Accès» Organization Time(ns) V p p (V) Voc(V) Typ» No. Wiita/Erase Standby Read Operating Write/Erase Temperature Method 600mil DIP •TC58F010F-10, 12 525mil SOP •TC58F010FT10, 12
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TC58F010P-10,
600mil
525mil
TC58F010F-10,
TC58F010FT10,
TC58F010TR-10,
TC58F010T-10,
TC58F4000P-12,
TC58F4000F-12,
450mi!
TC5816FT
TC5332410F
TC5316200CP
TC531621
TC5310
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