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    TC58DVM82A1FTI0 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TC58DVM82A1FTI0 Toshiba EEPROM, 256-MBIT (32M 8 BITS) CMOS NAND E2PROM Original PDF

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    TC58DVM82A1FTI0

    Abstract: No abstract text available
    Text: TC58DVM82A1FTI0 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT 32M u 8 BITS CMOS NAND E2PROM DESCRIPTION The device is a 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes u 32 pages u 2048 blocks. The device uses single power supply (2.7 V to 3.6


    Original     		PDF TC58DVM82A1FTI0 256-MBIT 528-byte TC58DVM82A1FTI0

    tsop-56 samsung

    Abstract: TC58DVM72A1FTI0 tc58fvm5t2atg TSOP1-48 THNCF1G02DG THNCF1G02DGI SD-M512 TC58NVG0S3AFTI5 THNCF128MMG toshiba Nand flash bga
    Text: TOSHIBA FLASH Network FCRAM NOR Flash SRAM Memory Selection Guide PSRAM NAND Flash Multi-Chip Packages Memory Cards September 2004 Toshiba America Electronic Components TOSHIBA Toshiba offers one of the widest varieties of memory products of any semiconductor manufacturer. Based on the three core memory technologies:


    Original     		PDF 576Mb 256Mb tsop-56 samsung TC58DVM72A1FTI0 tc58fvm5t2atg TSOP1-48 THNCF1G02DG THNCF1G02DGI SD-M512 TC58NVG0S3AFTI5 THNCF128MMG toshiba Nand flash bga