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TC55VBM416ATGN Abstract: TSOP48-P-1220-0 TC55VBM416 TSOP48-P-1220 Text: TC55VBM416ATGN40,55 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55VBM416ATGN is a 16,777,216-bit static random access memory SRAM organized as 1,048,576 words	Original	TC55VBM416ATGN40 576-WORD 16-BIT/2 152-WORD TC55VBM416ATGN 216-bit TSOP48-P-1220-0 TC55VBM416 TSOP48-P-1220	PDF

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TC55VBM416ATGN

Abstract: TSOP48-P-1220-0 TC55VBM416 TSOP48-P-1220
Text: TC55VBM416ATGN40,55 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55VBM416ATGN is a 16,777,216-bit static random access memory SRAM organized as 1,048,576 words

Original

TC55VBM416ATGN40 576-WORD 16-BIT/2 152-WORD TC55VBM416ATGN 216-bit TSOP48-P-1220-0 TC55VBM416 TSOP48-P-1220

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