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    TC55VBM416ATGN

    Abstract: TSOP48-P-1220-0 TC55VBM416 TSOP48-P-1220
    Text: TC55VBM416ATGN40,55 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55VBM416ATGN is a 16,777,216-bit static random access memory SRAM organized as 1,048,576 words


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    PDF TC55VBM416ATGN40 576-WORD 16-BIT/2 152-WORD TC55VBM416ATGN 216-bit TSOP48-P-1220-0 TC55VBM416 TSOP48-P-1220