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    TC55NEM216ATGN Price and Stock

    Toshiba America Electronic Components TC55NEM216ATGN70

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components TC55NEM216ATGN70 14
    • 1 $11.34
    • 10 $10.08
    • 100 $10.08
    • 1000 $10.08
    • 10000 $10.08
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    TC55NEM216ATGN Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TC55NEM216ATGN55 Toshiba 262,144-Word BY 16-BIT FULL CMOS STATIC RAM Original PDF
    TC55NEM216ATGN70 Toshiba 262,144-Word BY 16-BIT FULL CMOS STATIC RAM Original PDF

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    TC55NEM216ATGN

    Abstract: TC55NEM216ATGN55 TC55NEM216
    Text: TC55NEM216ATGN55,70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Lead-Free 262,144-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55NEM216ATGN is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V ±


    Original     		PDF TC55NEM216ATGN55 144-WORD 16-BIT TC55NEM216ATGN 304-bit TC55NEM216

    tsop-56 samsung

    Abstract: TC58DVM72A1FTI0 tc58fvm5t2atg TSOP1-48 THNCF1G02DG THNCF1G02DGI SD-M512 TC58NVG0S3AFTI5 THNCF128MMG toshiba Nand flash bga
    Text: TOSHIBA FLASH Network FCRAM NOR Flash SRAM Memory Selection Guide PSRAM NAND Flash Multi-Chip Packages Memory Cards September 2004 Toshiba America Electronic Components TOSHIBA Toshiba offers one of the widest varieties of memory products of any semiconductor manufacturer. Based on the three core memory technologies:


    Original     		PDF 576Mb 256Mb tsop-56 samsung TC58DVM72A1FTI0 tc58fvm5t2atg TSOP1-48 THNCF1G02DG THNCF1G02DGI SD-M512 TC58NVG0S3AFTI5 THNCF128MMG toshiba Nand flash bga