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    TC5518 Price and Stock

    Toshiba America Electronic Components TC551864AJ-20

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics TC551864AJ-20 14,218
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    Toshiba America Electronic Components TC551864AJ-15

    CACHE SRAM, 64KX18, 15NS, CMOS, PDSO44
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components TC551864AJ-15 1,490
    • 1 $8.79
    • 10 $8.79
    • 100 $8.79
    • 1000 $4.395
    • 10000 $4.395
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    Toshiba America Electronic Components TC5518CFL-20

    IC,SRAM,2KX8,CMOS,SOP,24PIN,PLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components TC5518CFL-20 27
    • 1 $15
    • 10 $7.5
    • 100 $6.5
    • 1000 $6.5
    • 10000 $6.5
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    Toshiba America Electronic Components TC5518CPL-20

    IC,SRAM,2KX8,CMOS,DIP,24PIN,PLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components TC5518CPL-20 2
    • 1 $15
    • 10 $10
    • 100 $10
    • 1000 $10
    • 10000 $10
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    Toshiba America Electronic Components TC5518BPL20

    Electronic Component
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA TC5518BPL20 680
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    Find more TC5518 price and stock on Findchips.com

    TC5518 Datasheets (28)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TC551801ECBTR Microchip Technology 1 uA Low Dropout Positive Voltage Regulator Original PDF
    TC55187 Toshiba CMOS Static Cache Data RAM Scan PDF
    TC55187T-20 Toshiba Toshiba Shortform Catalog Scan PDF
    TC55187T-25 Toshiba Toshiba Shortform Catalog Scan PDF
    TC55187T-30 Toshiba Toshiba Shortform Catalog Scan PDF
    TC55188T-20 Toshiba Toshiba Shortform Catalog Scan PDF
    TC55188T-25 Toshiba Toshiba Shortform Catalog Scan PDF
    TC55188T-30 Toshiba Toshiba Shortform Catalog Scan PDF
    TC5518BD-20 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    TC5518BDL-20 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    TC5518BP-20 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    TC5518BPL-20 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    TC5518CF-15 Toshiba Vintage Memory Datasheet Scan PDF
    TC5518CF-15 Toshiba 2,048 word x 8-Bit CMOS Static RAM Scan PDF
    TC5518CF-20 Toshiba Vintage Memory Datasheet Scan PDF
    TC5518CF-20 Toshiba 2,048 word x 8-Bit CMOS Static RAM Scan PDF
    TC5518CFL-15 Toshiba Vintage Memory Datasheet Scan PDF
    TC5518CFL-15 Toshiba 2,048 word x 8-Bit CMOS Static RAM Scan PDF
    TC5518CFL-20 Toshiba Vintage Memory Datasheet Scan PDF
    TC5518CFL-20 Toshiba 2,048 word x 8-Bit CMOS Static RAM Scan PDF

    TC5518 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    PA0016

    Abstract: STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor
    Text: Utgåva 2005-03-24 Alla artiklar i katalogen finns normalt i lager men det tillkommer och utgår kontinuerligt. För aktuell information om prisvärt industriöverskott / surplus surfa in på: http://www.labb.se/surplus.htm Tel: 08-641 86 30 Fax: 08-641 87 30


    Original     		14-dagar PA0016 STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor PDF

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N PDF

    toshiba toggle mode nand

    Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP
    Text: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit


    Original     		64M128M 66MHz 100MHz 200MHz) 500/600MHz 800MHz 400MHz 800MHz) X16/X18X32 PhotoPC550 toshiba toggle mode nand TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP PDF

    TC55188

    Abstract: TC55188T-25 TC55188T-20 TC55188T
    Text: •»ilK 2 - W A Y 4,096 W ORDS x 18 BITS/8,192 WORDS x 18 BITS CMOS STATIC CACHE DATA RAM DESCRIPTION The TC55188T is a 147,456bits high-speed static RAM which can be user-configured either a s 2-way 4,096 words by 18 bits or as 8,192 words by 18 bits. It is provided with a byte control, on-chip


    OCR Scan     		TC55188T 456bits TC55188T--20, TC55188T-25, 55188T-30 TC55188 TC55188T-25 TC55188T-20 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2 - W A Y 4 ,0 9 6 W O R D S x 18 B IT S /8 ,1 9 2 W O R D S x 18 BITS CM O S STA TIC C A C H E D A T A RAM DESCRIPTION The TC55188T is a 147,45Gbits high-speed static RAM which can be user-configured either as 2-way 4,096 words by 18 bits or as 8,192 words by 18 bits. It is provided with a byte control , on-chip


    OCR Scan     		TC55188T 45Gbits TC55188Tâ TC55188T-25, 55188T-30 PDF

    82385

    Abstract: TNR*G gg70 TC55187 DP1 TOS TC55187T25 tnrg TC55187T-30 al2v BS5B5
    Text: 2 -W A Y 4,096 W ORDS x 18 BITS / 8,192 W ORDS x 18 CMOS STATIC CACHE DATA RAM BITS DESCRIPTION The TC55187T is a 147,456 bits high-speed static RAM which can be user-configured either as 2-way 4,096 words by 18 bits or as 8,192 words by 18 bits. It is provided with a byte control and on-chip


    OCR Scan     		TC55187T TC55187Tâ TC55187T-25, TC55187T-30 QFJ52â 82385 TNR*G gg70 TC55187 DP1 TOS TC55187T25 tnrg TC55187T-30 al2v BS5B5 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC551864AJ-15/20 PRELIMINARY SILICON GATE CMOS 65,536 WORD x 18 BIT CMOS STATIC RAM Description The TC551864AJ is a 1,179,648 bits high speed static random access memory organized as 65,536 words by 18 bits using CMOS technology and operated from a single 5-volt supply. Toshiba’s CMOS technology and advanced circuit form provide high


    OCR Scan     		TC551864AJ-15/20 TC551864AJ SR01040795 SOJ44-P-400) PDF

    TC551864AJ-15

    Abstract: TC551864 TC551864AJ-20 TC551864AJ tc551864aj15 TC5518 TC551864AJ20
    Text: TOSHIBA TC551864AJ-15/20 PRELIMINARY S I L I C ON GATE C M O S 65, 536 W O R D x 18 BI T C M O S STATIC RAM Description The TC551864AJ is a 1,179,648 bits high speed static random access memory organized as 65,536 words by 18 bits using CMOS technology and operated from a single 5-volt supply. Toshiba’s CMOS technology and advanced circuit form provide high


    OCR Scan     		TC551864AJ-15/20 TC551864AJ TC551864AJ-15 TC551864 TC551864AJ-20 tc551864aj15 TC5518 TC551864AJ20 PDF

    TC55187T

    Abstract: TC55187T-20 TC55187T-25
    Text: I TC 55187T—20, T C 5 5 1 8 7 T -2 5 , T C 5 5 1 8 7 T -3 0 2 - W A Y 4 ,0 9 6 W O R D S x 18 B IT S /8 ,1 9 2 W O R D S x 18 BITS C M O S STATIC CACHE D A T A R A M DESCRIPTION The TC55187T is a 147,456 bits high-speed static RAM which can be user-configured either as 2-way


    OCR Scan     		55187T--20, TC55187T TC55187T--20, TC55187T-25, 55187T-30 QFJ52-- TC55187T-20 TC55187T-25 PDF

    hm6117

    Abstract: TC5518
    Text: F U JIT S U M IC R O E L E C T R O N IC S . MB8418-20 MB8418-20L INC. CMOS 16,384-BIT STATIC RANDOM ACCESS MEMORY DESCRIPTION T h e Fu jits u M B 84 18 is a 2048 w ord by 8-bit s ta tic rand om a c ­ c e ss m em o ry fa b ricated w ith high density, high relia b ility C o m p le ­


    OCR Scan     		MB8418-20 MB8418-20L 384-BIT /MB8417-20L 24-LEAD DIP-24C-C03 DIP-24P-M02 32-PAD hm6117 TC5518 PDF

    toshiba 32k*8 sram

    Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
    Text: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258


    OCR Scan     		KM4164 KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 toshiba 32k*8 sram M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 TC51464 PDF

    2SKI34

    Abstract: TA8515 westinghouse TA8509F CTC 313 transistor pin diagram TOSHIBA DIODE CATALOG T6950 TD62803 LSI LOGIC product catalog TC8576
    Text: [CATALOG 5VSTEMCATALOG SV5TEMCATALOG 5V5TEM CATALOG 5VSTEM C K T Q S rG A m .ro H IB f lp T E M CATALOG SV5TEM CATALOG 5VSTEM CATALOG S t 5 v llfflC A T A L O G SVSTEMCATALOG SVSTEMCATALOG SVSTEM CA SVSTEM CATALOG SVSTEM CATALOG 5V 5TE M CATALOG SVSTEM CATALOG S t


    OCR Scan     		J22587 90-3D 2SKI34 TA8515 westinghouse TA8509F CTC 313 transistor pin diagram TOSHIBA DIODE CATALOG T6950 TD62803 LSI LOGIC product catalog TC8576 PDF

    SRM2017C15

    Abstract: 24PIN MB8417-20 MB8417-20L MB8417A-12 MB8417A-12L MB8417A-15 MB8418-20 MB8418A-12 sbm20
    Text: - 57 16 K £ % ft £ ioxmi OC 'f X TAAC nax ns) TCAC max (ns) CMOS TO E max (ns) / f y / S t a t i c If RAM ( 2 0 4 8 x 8 ) m ft TOH n in (ns) TOD TWP rain TD S min TDH n in TWD nin TWR max VDD o r VCC (ns) (ns) (ris) (ns) (ns) (ns) (V) 2 4 P I N 6 M 7 m


    OCR Scan     		2048x8) 24PIN MB8417-20 MB8417-20L MB8417A-12 MB8417A-12M2018AP-45 Z5516AP Z5516AP-2 ZS516APL Z5516APL-2 SRM2017C15 MB8417A-12L MB8417A-15 MB8418-20 MB8418A-12 sbm20 PDF

    organizational structure samsung

    Abstract: NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256
    Text: Static RAM Cross Reference STATIC RAM CROSS REFERENCE ORGANIZATIONAL STRUCTURE 2K 2K X X 32K 8K X e w/CE, OE 8 W/CE1, CE2 X 8 Stow 8 Slow COMPETITIVE VENDOR SH ARP MODEL LH5116 LH5118 LH51256 LH5164A AMD Am9128 Harris CDM6116 Hitachi HM6116A Hyundai HY6116


    OCR Scan     		LH5116 Am9128 CDM6116 HM6116A HY6116 HM6116 MS6516 SRM2016 MK6116 CXK5816 organizational structure samsung NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256 PDF

    TC55187T

    Abstract: No abstract text available
    Text: 2 - W A Y 4 ,0 9 6 W O R D S x 18 BITS / 8,1 92 W O R D S x 18 BITS CM OS STATIC CACHE D A T A R A M DESCRIPTION The TC551S7T is a 147,456 bits high-speed static RAM which can be user-configured either as 2-way 4,096 words by 18 bits or as 8,192 words by 18 bits. It is provided with a byte control and on-chip


    OCR Scan     		TC551S7T TC55187T TC55187Tâ TC55187T-25, TC55187T-30 QFJ52â P-S750 PDF

    TA8172AF

    Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
    Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16


    OCR Scan     		015Z10 015Z11 015Z12 015Z2 015Z3 TA8172AF TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P PDF

    MB8418-20L

    Abstract: MB8417-20L TC5518 HM6117 m8s4
    Text: FUJITSU MICROELECTRONICS 7B F U JIT S U M IC R O E L E C T R O N IC S . DEI 3 m ñ l \ o B 0003335 1 |~ T-46-23-12; MB8418-20 MB8418-20L INC. CMOS 16,384-BIT STATIC RANDOM ACCESS MEMORY DESCRIPTION The M B8418 can be optimized for high perform ance applications


    OCR Scan     		T-46-23-12; MB8418-20 MB8418-20L 384-BIT MB8418 B8418 374T7t 00D333Ö MB8418-20/MB8417-20L 24-LEAD MB8418-20L MB8417-20L TC5518 HM6117 m8s4 PDF

    Diode Equivalent 1N34A

    Abstract: TC5517APL TMM2016P catalyst research corp TC5514 equivalent of diode 1N34A TC5518BPL mk4104 tmm2016 TC5516
    Text: Professional Program Session Record 17 Battery Backup for the Life of the Product CATALYST RESEARCH CORPORATION 1421 C LAR KVIEW ROAD • BALTIM ORE, M A R Y L A N D 21209-9987 TELEPHONE 301 296-7000 • TELEX. 87-768 • U.S.A. Session 17 Battery Backup For the Life of the Product


    OCR Scan     		PDF

    TC55328AP

    Abstract: TC55417J-15H AJ35
    Text: High Speed Static RAM Capacity 64KBit Typ« No. Ofganizaion Min. Cycle Time ns TC55417J-15H 15 15 TC55417J-20H 20 20 TC55417J-25H 25 25 TC55417J-35H 35 35 TC55B417P/J-10 10 10 TC55B417P/J-12 12 12 16,384 x 4 TC5588P/J-15 15 15 TC5588P/J-20 20 20 25 25 35


    OCR Scan     		TC55417J-15H TC55417J-20H TC55417J-25H TC55417J-35H TC55B417P/J-10 64KBit TC55B417P/J-12 TC5588P/J-15 TC5588P/J-20 TC5588P/J-25 TC55328AP AJ35 PDF

    TC5518CP-20

    Abstract: No abstract text available
    Text: TOSHIBA MOS MEMORY PRODUCT ?'ui ~'> t' ' a e" CHOS HiH TCB518CF-1B/CFI-1B/CF-Z0/CFI-20 D ESCR IPTIO N The T C 5 5 1 8C P/C F is a 1 6 3 8 4 - b it high speed and lo w pow er sully static ran do m access m e m o ry o rg a ­ nized as 2 0 4 8 w o rd s by a 8 bits using C M O S te c h ­


    OCR Scan     		TCB518CF-1B/CFI-1B/CF-Z0/CFI-20 FEAT-20/CPL-20 TC5518CF-15/C FL-15/CF-20/CFL-20 TC5518CP-20 PDF