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Toshiba America Electronic Components


Toshiba America Electronic Components TC551632J-20
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TC55163 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TC551632J-25 Abstract: TC551632 Text: 51632J —20. TC 551632J—25. TC 32,768 W O R D x 16 BIT CMOS STATIC RAM PRELIMINARY DESCRIPTION The TC551632J is a 524,288 bits high speed static random access memory organized as 32,768 words by 16 bits using CMOS technology, and operated from a single 5-volt supply.	OCR Scan	51632J 551632J--25. TC551632J C-103 TC551632J--20, TC551632J-25, TC551632J-35 TC551632J-25 TC551632	PDF
T8E6 Abstract: TC551632 TC551632J acc20 Text: TOSHIBA T C 5 5 1 6 3 2 .1 -2 0 / 2 5 / 3 5 SILICON GATE CMOS 32,768 WORD x 16 BIT CMOS STATIC RAM Description The TC551632J is a 524,288 bit high speed CMOS static random access memory organized as 32,768 words by 16 bits and operated from a single 5V supply. Toshiba's advanced CMOS technology and circuit design enable high speed operation.	OCR Scan	TC551632J B-101 T8E6 TC551632 acc20	PDF
TC55B4257 Abstract: TC551664J-20 Text: X6 Capacity 288KBit Type No. Organization 15 15 TC55329AP/AJ-20 20 20 TC55329AP/AJ-25 25 25 TC56329AP/AJ-35 32,768 x 9 35 35 TC55B329P/J-10 10 10 TC55B329P/J-12 12 12 TC55B329P/J-15 15 15 20 20 25 25 TC551632J-36 35 35 TC5SB4256J-12 12 12 TC55B4256J-15 15	OCR Scan	TC55329AP/AJ-15 TC55329AP/AJ-20 TC55329AP/AJ-25 288KBit TC56329AP/AJ-35 TC55B329P/J-10 TC55B329P/J-12 TC55B329P/J-15 TC551632J-20 512KBit TC55B4257 TC551664J-20	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA TC551632J-20/25/35 SILICON GATE CMOS 32,768 WORD x 16 BIT CMOS STATIC RAM Description The TC551632J is a 524,288 bit high speed CMOS static random access memory organized as 32,768 words by 16 bits and operated from a single 5V supply. Toshiba's advanced CMOS technology and circuit design enable high speed operation.	OCR Scan	TC551632J-20/25/35 TC551632J 400mil c0c721 B-101	PDF
Untitled Abstract: No abstract text available Text: 32,768 WORD x 16 BIT CMOS STATIC RAM DESCRIPTION PRELIMINARY The TC551632J is a 524,288 bits high speed static random access m emory organized as 32,768 words by 16 b its u sing CMOS technology, and operated from a single 5-volt supply. T oshiba's CMOS technology and advanced circuit form provide high speed feature.	OCR Scan	TC551632J TC55163 C-103 TC551632Jâ TC551632J-25, TC551632J-35 SOJ40 P-40Q 46MAX	PDF
41C464 Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100 Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page	OCR Scan	41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100	PDF
K93C46 Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256 Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257	OCR Scan	416C256 14800A 14900A 514170B 514280B KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP HN624017FB K93C46 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256	PDF
TC55B8128 Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256 Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6	OCR Scan	TC511001 TC514101 514170B 514280B TC5316200P KM2X16100 KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP TC55B8128 KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256	PDF