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    TC5117405

    Abstract: TC5118165 equivalent of BFT 51 TC51181 TC5118165B
    Text: TOSHIBA THM3680G5BS/BSG-60 THM3680G5BS/BSG-70 8,388,608 WORD X 36 BIT EDO DYNAMIC RAM MODULE Description The THM3680G5BS/BSG is a 8,388,608 words by 36 bits dynamic RAM module which assembled 16 pcs of TC5117405BSJ and 2 pcs of TC5117445BSJ on the printed circuit board. This module is optimized for application to the systems which are required high


    Original     		PDF THM3680G5BS/BSG-60 THM3680G5BS/BSG-70 THM3680G5BS/BSG TC5117405BSJ TC5117445BSJ 620mW THMxxxxxx-60) 990mW THMxxxxxx-70) THM3680G5BS/BSG-60/70 TC5117405 TC5118165 equivalent of BFT 51 TC51181 TC5118165B

    EIAJ ED-4701-1

    Abstract: tc5118165bj EIAJ ED-4701-1 C-111A TC5118165 TC514265DJ a107a tc5165165 tc5117405 TC5165165B failure rate TDDB
    Text: [3] 東芝半導体製品の品質･信頼性保証 1. 1.1 信頼性試験とは 信頼性試験の意義と目的 半導体デバイスの信頼性試験の目的としてデバイスがメーカーから出荷されお客様の機器組み立て 調整工程を経て、最終ユーザーにおいて所望の期間、機器の機能、性能が発揮されることを確認する


    Original     		PDF M65BJ TC5117405BST TC51V16165BFT TC5118165BFT 65deg C/150deg 300cycles) TC5117405BSJ TC514265DJ TC5118165BJ EIAJ ED-4701-1 tc5118165bj EIAJ ED-4701-1 C-111A TC5118165 TC514265DJ a107a tc5165165 tc5117405 TC5165165B failure rate TDDB

    edo ram 72pin

    Abstract: TC5117405 TC5118165 TC5118 bsg70 simm EDO 72pin 104ns TC5118165BJ hidden refresh TC51181
    Text: TOSHIBA THM3210B5BS/BSG-60 THM3210B5BS/BSG-70 1,048,576 WORD X 32 BIT EDO DYNAMIC RAM MODULE Description The THM3210B5BS/BSG is a 1,048,576 words by 32 bits dynamic RAM module which assembled 2 pcs of TC5118165BJ on the printed circuit board. This module is optimized for application to the systems which are required high density and large capacity such


    Original     		PDF THM3210B5BS/BSG-60 THM3210B5BS/BSG-70 THM3210B5BS/BSG TC5118165BJ 890mW THMxxxxxx-60) 575mW THMxxxxxx-70) edo ram 72pin TC5117405 TC5118165 TC5118 bsg70 simm EDO 72pin 104ns hidden refresh TC51181

    tc5118165bj

    Abstract: TC5118165 TC5117405 SOJ42-P-400 TC5117405BSJ hidden refresh TSOP70-P-400 TC51181 TC5118 TOSHIBA TSOP50-P-400
    Text: TOSHIBA TC5116405BSJ/BST-60 TC5116405BSJ/BST-70 PRELIMINARY 4,194,304 WORD X 4 BIT EDO DYNAMIC RAM Description The TC5116405BSJ/BST is the Hyper Page Mode (EDO) dynamic RAM organized as 4,194,304 words by 4 bits. The TC5116405BSJ/BST utilizes Toshiba’s CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide


    Original     		PDF TC5116405BSJ/BST-60 TC5116405BSJ/BST-70 TC5116405BSJ/BST 300mil) cycles/64ms TC51V16325BJ: SOJ70-P-400A tc5118165bj TC5118165 TC5117405 SOJ42-P-400 TC5117405BSJ hidden refresh TSOP70-P-400 TC51181 TC5118 TOSHIBA TSOP50-P-400

    TC5117405

    Abstract: No abstract text available
    Text: TOSHIBA THM328025BS/BS&60/70 PRELIMINARY 8,388,608 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM328025BS/BSG is a 8,388,608 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which assembled 16 pcs of TC5117405BSJ on the printed circuit board. This module is optimized for application to the systems which are


    OCR Scan     		PDF THM328025BS/BS THM328025BS/BSG TC5117405BSJ 704mW THMxxxxxx-60) 074mW THMxxxxxx-70) DM32020695 M328025BS/BSG THM328025BS/BSG-6Q/70 TC5117405

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA *i[H724ô 00 2ÛS17 HIT THM328025BS/BSG-60/70 PRELIMINARY 8,388,608 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM328025BS/BSG is a 8,388,608 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which assembled 16 pcs of TC5117405BSJ on the printed circuit board. This module is optimized for application to the systems which are


    OCR Scan     		PDF THM328025BS/BSG-60/70 THM328025BS/BSG TC5117405BSJ 704mW DM32020695 THM328025BS/BSG 328025BS/BSG

    TC5117405

    Abstract: BST60
    Text: TOSHIBA T C 5 1 1 7 4 0 5 B S J / B S T -6 0 / 7 0 PRELIMINARY 4,194,304 WORD X 4 BIT HYPER PAGE EDO DYNAMIC RAM Description The TC5117405BSJ/BST is the hyper page (EDO) dynamic RAM organized 4,194,304 word by 4 bits. The TC5117405BSJ/ BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operat­


    OCR Scan     		PDF TC5117405BSJ/BST TC5117405BSJ/ 300mil) TC5117405BSJ/BST-60/70 DR16070295 TC5117405 BST60

    TC5117405

    Abstract: No abstract text available
    Text: DRAM Module AC Conditions No. 31 TC5117405BSJ/BST, TC5117445BSJ/BST TC51V17405BST/BST, TC51V17445BSJ/BST Electrical Characteristics and Recommended AC Operating Conditions Notes 6,7,8 THMxxxxxx-70 MIN MAX MIN MAX UNIT NOTES 104 - 124 - ns - 60 - 70 ns 9, 13, 14


    OCR Scan     		PDF TC5117405BSJ/BST, TC5117445BSJ/BST TC51V17405BST/BST, TC51V17445BSJ/BST THMxxxxxx-60 THMxxxxxx-70 TC5117405

    BST60

    Abstract: No abstract text available
    Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5117405BSJ/BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT HYPER PAGE EDO DYNAMIC RAM Description The TC5117405BSJ/BST is the hyper page (EDO) dynamic RAM organized 4,194,304 word by 4 bits. The TC5117405BSJ/BST utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,


    OCR Scan     		PDF TC5117405BSJ/BST-60/70 TC5117405BSJ/BST TC5117405BSJ/BST 300mil) DR16070295 SOJ26-P-300C) BST60

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA •^0^7240 Q O E fiM TO 4Mb THM324005BS/BSG60/70 PRELIMINARY 4,194,304 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM324005BS/BSG is a 4,194,304 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which is assem­ bled with 8 pcs of TC5117405BSJ on the printed circuit board. This module is optimized for application to the systems which


    OCR Scan     		PDF THM324005BS/BSG60/70 THM324005BS/BSG TC5117405BSJ 620mW THMxxxxxx-60) 990mWC h9200 /09-Dsa/sas00fezei/\iHi

    Untitled

    Abstract: No abstract text available
    Text: QD2Ö531 TOSHIBA • - THM3680G5BS/BSGW70 PRELIMINARY 8,388,608 WORDS X 36 BIT EDO DYNAMIC RAM MODULE Description The THM3680G5BS/BSG is a 8,388,608 words by 36 bits Hyper Page Mode (EDO) dynamic RAM module which is assem­ bled with 16 pcs of TC5117405BSJ and 2 pcs of TC5117445BSJ on the printed circuit board. This module is optimized for


    OCR Scan     		PDF THM3680G5BS/BSGW70 THM3680G5BS/BSG TC5117405BSJ TC5117445BSJ 292mW THMxxxxxx-60) 584mW 31AIV ES9200 SSSD089EIAIH1

    TC5117405

    Abstract: No abstract text available
    Text: TOSHIBA THM3680G5BS/BSG-60/70 PRELIMINARY 8,388,608 WORDS X 36 BIT EDO DYNAMIC RAM MODULE Description The THM3680G5BS/BSG is a 8,388,608 words by 36 bits Hyper Page Mode (EDO) dynamic RAM module which is assem­ bled with 16 pcs of TC5117405BSJ and 2 pcs of TC5117445BSJ on the printed circuit board. This module is optimized for


    OCR Scan     		PDF THM3680G5BS/BSG-60/70 THM3680G5BS/BSG TC5117405BSJ TC5117445BSJ 292mW THMxxxxxx-60) 584mW THMxxxxxx-70) D-100 DM32040695 TC5117405

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA ^ 0* 17 2 40 OOHfiSDM ñbO • - THM3640F5BS/BSG-60/70 PRELIMINARY 4,194,304 WORDS X 36 BIT EDO DYNAMIC RAM MODULE Description The THM3640F5BS/BSG is a 4,194,304 words by 36 bits Hyper Page Mode (EDO) dynamic RAM module which is assem­


    OCR Scan     		PDF THM3640F5BS/BSG-60/70 THM3640F5BS/BSG TC5117405BSJ TC5117445BSJ DM16040595 THM3640F5BS/BSG

    TA8172AF

    Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
    Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16


    OCR Scan     		PDF 015Z10 015Z11 015Z12 015Z2 015Z3 TA8172AF TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P