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    KOA Speer Electronics Inc RK73H1HTTC5101F

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    KOA Speer Electronics Inc RK73B1HTTC510J

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    KOA Speer Electronics Inc RK73H1HTTC5111F

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    DigiKey RK73H1HTTC5111F Digi-Reel 14,429 1
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    SEI Stackpole Electronics Inc RNMF14FTC51R0

    RES 51 OHM 1% 1/4W AXIAL
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    RNMF14FTC51R0 Reel 5,000 5,000
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    Master Electronics RNMF14FTC51R0
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    KOA Speer Electronics Inc RK73B1HRTTC512J

    RES 5.1K OHM 5% 1/20W 0201
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    DigiKey RK73B1HRTTC512J Cut Tape 9,155 1
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    RK73B1HRTTC512J Digi-Reel 9,155 1
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    TC51 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TC51 Cornell Dubilier Aluminum Capacitors, Capacitors, CAP ALUM 8.0UF 250V AXIAL Original PDF
    TC51 Microchip Technology Very Low Power, Open Drain Output, CMOS Voltage Detector with Built-in Delay Original PDF
    TC51 Microchip Technology 1uA Voltage Detector with Output Delay Original PDF
    TC510 Microchip Technology Precision Analog Front Ends Original PDF
    TC510 Microchip Technology Precision Analog Front Ends Original PDF
    TC510 TelCom Semiconductor PRECISION ANALOG FRONT ENDS Original PDF
    TC510CJE Microchip Technology Precision Analog Front End Original PDF
    TC510CO Microchip Technology TC510 - AFE General Purpose 1ADC 17-Bit 5V 24-Pin SOIC W Tube Original PDF
    TC510COE Microchip Technology Precision Analog Front End Original PDF
    TC510COE713 Microchip Technology Precision Analog Front End Original PDF
    TC510COG Microchip Technology Data Acquisition - Analog Front End (AFE), Integrated Circuits (ICs), IC ANLG FRONT END 17BIT 24-SOIC Original PDF
    TC510COG Microchip Technology Precision Analog Front End, 0C to +70C, 24-SOIC 300mil, TUBE Original PDF
    TC510COG Unknown Precision Analog Front Ends Original PDF
    TC510COG TelCom Semiconductor PRECISION ANALOG FRONT ENDS Original PDF
    TC510COG TelCom Semiconductor PRECISION ANALOG FRONT ENDS Original PDF
    TC510COG713 Microchip Technology Data Acquisition - Analog Front End (AFE), Integrated Circuits (ICs), IC ANALOG FRONT END 17BIT 24SOIC Original PDF
    TC510COG713 Microchip Technology Precision Analog Front End Original PDF
    TC510COGTR Microchip Technology Precision Analog Front Ends Original PDF
    TC510COI Microchip Technology Precision Analog Front End Original PDF
    TC510COI713 Microchip Technology Precision Analog Front End Original PDF
    ...

    TC51 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    A9RV

    Abstract: 5s a315 A327
    Text: TOSHIBA TC514900AJLL-70/80 524,288 WORD X 9 BIT DYNAMIC RAM DESCRIPTION The TC514900AJLL is the new generation dynamic RAM organized 524,288 word by 9 bit. The TC514900AJLL utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit


    OCR Scan     		TC514900AJLL-70/80 TC514900AJLL TC514900AJLI/70/80 TC514900AJLL70/80 A9RV 5s a315 A327 PDF

    4A04I

    Abstract: tc514100a
    Text: TC51441OAP/AJ/ASJ/AZ—70, TC51441OAP/AJ/ASJ/AZ-80 TC51441OAP/AJ/ASJ/AZ-10 PRELIMINARY 1,048,576 W ORD x 4 BIT DYNAMIC RAM DESCRIPTION The TC51441 OAP/AJ/ASJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514410AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as


    OCR Scan     		TC51441OAP/AJ/ASJ/AZ-- TC51441OAP/AJ/ASJ/AZ-80 TC51441OAP/AJ/ASJ/AZ-10 TC51441 TC514410AP/AJ/ASJ/AZ 350mil) TC514100AP/AJ/ASJ/AZ. TC5141OOAP/AJ/ASJ/AZ-60 4A04I tc514100a PDF

    BE423

    Abstract: No abstract text available
    Text: TOSHIBA TC5118325BJ/BFT-70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description The TC5118325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC5118325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to pro­


    OCR Scan     		TC5118325BJ/BFT-70 TC5118325BJ/BFT TC5118325BJ/ 400mil) I/024 I/025 I/032 BE423 PDF

    TC514170BJ-80

    Abstract: tc514170 TC514170BJ80
    Text: TOSHIBA TC514170BJ-70/80 262,144 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC514170BJ is the new generation dynam ic RAM organized 262,144 word by 16 bit. The TC514170BJ utilizes T oshiba’s CM OS silicon gate process technology as well as advanced circuit techniques


    OCR Scan     		TC514170BJ-70/80 TC514170BJ TC514170BJ-80 tc514170 TC514170BJ80 PDF

    TC5117445CSJ

    Abstract: No abstract text available
    Text: TO SHIBA_ TC5117445CSJ-40,-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORD BY 4-BIT EDO HYPER PAGE DYNAMIC RAM DESCRIPTION The TC5117445CSJ is an EDO (Hyper Page) dynamic RAM organized as 4,194,304 words by 4 bits. The


    OCR Scan     		TC5117445CSJ-40 304-WORD TC5117445CSJ 28-pin 17445CSJ-40 TC5117445CSJ SOJ28 PDF

    TC51V18160

    Abstract: No abstract text available
    Text: INTEGRATED TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TC51V18160 C S / CFTS - 60 TOSHIBA TECHNICAL DATA SILICON GATE CMOS TENTATIVE DATA 1,048,576 WORD x16 BIT FAST PAGE DYNAMIC RAM DESCRIPTION The TC51V1S160CJS-CFTS is the fast page dynamic R A M organized 1,048,576 words by 16 bits.


    OCR Scan     		TC51V18160 TC51V1S160CJS-CFTS TC51V18160CJS TC51V18160CJS/CFTS 73MAX TSOP50-P-400) 875TYP 35MAX TC51V18160CJS/CFT> PDF

    TC5117800bnt-60

    Abstract: TC5117800B
    Text: TOSHIBA TC5117800BNJ/BNT-60/70 PRELIMINARY 2,097,152 WORD X 8 BIT FAST PAGE DYNAMIC RAM Description The TC5117800BNT is the fast page dynamic RAM organized 2,097,152 words by 8 bits. The TC5117800BNT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,


    OCR Scan     		TC5117800BNJ/BNT-60/70 TC5117800BNT TC5117800bnt-60 TC5117800B PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY 4,194,304 WORD x 1 BIT DYNAMIC RAM DESCRIPTION The TC514101AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514101AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating m argins, both internally and to the system user.


    OCR Scan     		TC514101AP/AJ/ASJ/AZ 300/350mil) TC514101AP/ASJ/AZ. TC514101AP/AJ/ASJ/A2-70, TC514101AP/AJ/ASJ/AZ-80 TC514101AP/AJ/ASJ/AZ-10 PDF

    TC514265DJ

    Abstract: TC514265D TC514265 SOJ40-P-400
    Text: TOSHIBA TC514265DJ/DFT-50/60/70 PRELIMINARY 262,144 WORD X 16 BIT EDO HYPER PAGE DYNAMIC RAM Description TC514265DJ/DFT is an EDO (hyper page) dynamic RAM organized as 262,144 words by 16 bits. TC514265DJ/ DFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide oper­


    OCR Scan     		TC514265DJ/DFT-50/60/70 TheTC514265DJ/DFT TheTC514265DJ/ TC514265DJ/DFT TC514265D J/DFT-50/60/70 DR04041293 TC514265DJ TC514265 SOJ40-P-400 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC514800AJ/AZ/AFT-70/80 524,288 WORD X 8 BIT DYNAMIC RAM DESCRIPTION The TC514800AJ/AZ/AFT is the new generation dynam ic RAM organized 524,288 word by 8 bit. The TC514800A J/AZ/AFT utilizes T oshiba’s CM OS silicon gate process technology as w ell as advanced circuit


    OCR Scan     		TC514800AJ/AZ/AFT-70/80 TC514800AJ/AZ/AFT TC514800A PDF

    TC5117405

    Abstract: No abstract text available
    Text: TOSHIBA THM328025BS/BS&60/70 PRELIMINARY 8,388,608 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM328025BS/BSG is a 8,388,608 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which assembled 16 pcs of TC5117405BSJ on the printed circuit board. This module is optimized for application to the systems which are


    OCR Scan     		THM328025BS/BS THM328025BS/BSG TC5117405BSJ 704mW THMxxxxxx-60) 074mW THMxxxxxx-70) DM32020695 M328025BS/BSG THM328025BS/BSG-6Q/70 TC5117405 PDF

    TC51832FL10

    Abstract: TC51832 TC51832FL-10 TC51832PL-10 256IC 832P
    Text: 832P/S 832 P/S 832P/S 32,768 WORD x 3 BIT CMOS PSEUDO STATIC RAM IDESCRIPTION] The TC51832 Family is a 256IC bit high-speed CMOS Pseudo-Static RAM organized as 32,768 words by 8 bits. The TC51832 Family utilizes one transistor dynamic memory cell array with


    OCR Scan     		832P/S 832P/S TC51832 256IC TC51832P plastic/SP/F/PL/SPL/FL-12 DIP28-P-300) TC51832FL10 TC51832FL-10 TC51832PL-10 832P PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA THM3610B0AS/ASG-60/70 PRELIMINARY 1,048,576 WORDS X 36 BIT DYNAMIC RAM MODULE Description The THM3610B0AS/ASG is a 1,048,576 words by 36 bits dynamic RAM module which assembled 2 pcs of TC5118180AJ on the printed circuit board. This module can be used as well as 2,097,152 words by 18 bits dynamic RAM module, by means


    OCR Scan     		THM3610B0AS/ASG-60/70 THM3610B0AS/ASG TC5118180AJ THM361OBOAS/ASG-60/70 THM3610B0AS/ASG DM04030494 PDF

    tc5118180

    Abstract: TC5118180AJ TC5118180A A495 A509 TC511818 TC5118 TOSHIBA TSOP50-P-400 toshiba A500 A498
    Text: TOSHIBA TC511818 QAJ/AFT-70/80 1,048,576 WORD X 18 BIT DYNAMIC RAM DESCRIPTION The TC5118180AJ/FT is the new generation dynamic RAM organized 1,048,576 word by 18 bit. The TC5118180AJ/AFT utilizes Toshiba’s CMOS silicon gate process technology as w ell as advanced circuit


    OCR Scan     		TC511818 QAJ/AFT-70/80 TC5118180AJ/FT TC5118180AJ/AFT TC5118180AJ/AFT-70/80 tc5118180 TC5118180AJ TC5118180A A495 A509 TC5118 TOSHIBA TSOP50-P-400 toshiba A500 A498 PDF

    TC51V16405

    Abstract: TC51V16405c
    Text: INTEGRATED TOSHIBA " O S H I B A MOS DIGITAL I NT EGR AT ED CIRCUIT ” 51 V 16405 C5JS CST5 - SO TCS1V1c405 CSJ S/CSTS- 60 CIRCUIT TECHNICAL DATA SILICON GATE CMOS TENTATIVE DATA 4,194,304 W O RD x 4 BIT FAST PAGE DYNAM IC RAM DESCRIPTION The TC51V16405CSJS/CSTS is fast page dynamic RAM organized 4,194,304 words by 4 bits. The


    OCR Scan     		TCS1V1c405 TC51V16405CSJS/CSTS 300mil) TCS1V16405 TC51V16405 SOJ26 TSOP26 TC51V16405c PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MOS MEMORY PRODUCTS THM 81002S/L-85, 10 , 12 description! The T K M 8 1 0 0 2 S / L is a 1,048,576 w o r d s b y 8 b i t s pcs of TC511 0 0 2 J on the p r i nted c i rcuit board. The T H M 8 1 0 0 2 S / L is o p t i m i z e d for a p p l i c a t i o n to


    OCR Scan     		81002S/L-85, TC511 TIIM81002S/L-12 100ns 120ns THM81 PDF

    BC6MA

    Abstract: thm3640f0 thm3640 Toshiba D58 THM3640F0BS/BSG-60A70
    Text: TOSHIBA THM3640F0BS/BSGW70 PRELIMINARY 4,194,304 WORDS X 36 BIT DYNAMIC RAM MODULE Description The THM3640F0BS/BSG is a 4,194,304 words by 36 bits dynamic RAM module which assembled 8 pcs of TC5117400BSJ and 1 pc of TC5117440BSJ on the printed circuit board. This module is optimized for application to the systems which are


    OCR Scan     		THM3640F0BS/BSGW70 THM3640F0BS/BSG TC5117400BSJ TC5117440BSJ 198mW THMxxxxxx-60) 489mW THMxxxxxx-70) DM16030894 M3640F0BS/BSG BC6MA thm3640f0 thm3640 Toshiba D58 THM3640F0BS/BSG-60A70 PDF

    TC514258

    Abstract: 4256AP 58ab AZ-70
    Text: TOSHIBA MOS MEMORY PRODUCTS TC514258AP/AJ/AZ-70, TC514258AP/AJ/AZ-80 TC514258AP/AJ/AZ-10 DESCRIPTION The TC514258AP/AJ/AZ is the new generation dynamic RAM organized 262,144 words by 4 bits. The TC514258AP/AJ/AZ utilizes TOSHIBA'S CMOS Silicon gate process technology as


    OCR Scan     		TC514258AP/AJ/AZ-70, TC514258AP/AJ/AZ-80 TC514258AP/AJ/AZ-10 TC514258AP/AJ/AZ TC514258AP/AJ/AZ-70. TC514258AP/A4/AZ-80 TC514258 4256AP 58ab AZ-70 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC5164 5 805AJ/AFT/AJS/AFTS-40,-50 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8,388,6O8-WORD X8-BIT EDO (HYPER PAGE) DYNAMIC RAM DESCRIPTION The TC5164(5)805AJ/AFT/AJS/AFTS is an EDO (hyper page) dynamic RAM organized as 8,388,608


    OCR Scan     		TC5164 805AJ/AFT/AJS/AFTS-40 805AJ/AFT/AJS/AFTS 32-pin PDF

    TC518129

    Abstract: de interlace
    Text: TOSHIBA TC518129AP/ASP/AF/AFW-80/10/12 TC518129APL/ASPL/AFL/AFWL30/10/12 TC518129AFTLS0/10/12 SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The T C 5 1 8 1 2 9 A is a 1M bit high speed C M O S p se udo static R AM organized as 131,07 2 w o rd s by 8 bits. The TC 5 18 1 29A utilizes


    OCR Scan     		TC518129AP/ASP/AF/AFW-80/10/12 TC518129APL/ASPL/AFL/AFWL30/10/12 TC518129AFTLS0/10/12 TC518129APL/ASPL/AFL/AFWL/AFTL-80/10/12 AO-A16 TC518129 de interlace PDF

    A100COLUMN

    Abstract: No abstract text available
    Text: 4 ,1 9 4 ,3 0 4 W ORD x 1 BIT D Y N A M IC R A M * This is advanced information and specifica­ tions are subject to change without notice. DESCRIPTION The TC514101AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514101AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as


    OCR Scan     		TC514101AP/AJ/ASJ/AZ 300/350mil) TC514101AP/ASJ/AZ. TC514101AP/AJ/ASJ/AZ-60 A100COLUMN PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC51V16400BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description TheTC 51V16400B ST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. T heTC 51V16400B ST uti­ lizes Toshiba's CM O S silicon gate process technology as well as advanced circuit techniques to provide wide operating mar­


    OCR Scan     		TC51V16400BST-60/70 51V16400B TC51V16400BST 300mil) PDF

    v801

    Abstract: tc5165165
    Text: T O SH IB A THM72V8015ATG-4,-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM72V8015ATG is a 8,388,608-word by 72-bit dynamic RAM module consisting of nine TC5165805AFT DRAMs on a printed circuit board. This module is optimized for applications which


    OCR Scan     		THM72V8015ATG-4 72-BIT THM72V8015ATG 608-word TC5165805AFT v801 tc5165165 PDF

    tc5117400f

    Abstract: TC5117400J
    Text: TOSHIBA TC5117400J/Z/FT-60/70 4,194,304 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC5117400J/Z/FT-60/70 is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5117400J/Z/FT-60/70 utilizes Toshiba’s CMOS silicon gate process technology as well as advanced


    OCR Scan     		TC5117400J/Z/FT-60/70 TC5117400J/Z/FT-60/70 TC5117400J/Z/FT. 1MX16 tc5117400f TC5117400J PDF