H5TS5163MFR-12C
Abstract: H5TQ5163MFR-20C hynix naming rule h5tq
Text: H5TQ S 5163MFR 512Mb DDR3 SDRAM H5TQ(S)5163MFR * Since DDR3 Specification has not been defined completely yet in JEDEC, this document may contain items under discussion. * Contents may be changed at any time without any notice. Rev. 1.0 / Oct 2008 This document is a general product description and is subject to change without notice. Hynix semiconductor does not assume any
|
Original
|
PDF
|
5163MFR
512Mb
5163MFR
800MHz
12clock)
11clock)
96Ball
H5TS5163MFR-12C
H5TQ5163MFR-20C
hynix naming rule
h5tq
|
H5TQ2G63BFR
Abstract: H5TQ2G63BFR12C H5TQ2G63BFR-11C H5TQ2G
Text: H5TQ2G63BFR 2Gb DDR3 SDRAM Lead-Free&Halogen-Free RoHS Compliant H5TQ2G63BFR * Contents are subject to change at any time without notice. Rev 1.1 / Jan. 2011 This document is a general product description and is subject to change without notice. Hynix semiconductor does not assume any
|
Original
|
PDF
|
H5TQ2G63BFR
800/9000Mhz
800Mhz
800/900Mhz,
96Ball
H5TQ2G63BFR
H5TQ2G63BFR12C
H5TQ2G63BFR-11C
H5TQ2G
|
Elpida SDRAM
Abstract: diagram CD 5265 cs part MARKING hbs EDS2516ACTA-7A SH7750 SH7750S SH7751 "content addressable memories" power match precharge "content addressable memory" power match precharge "content addressable memories" match precharge
Text: HITACHI EUROPE LTD. Version: App 92/2.0 APPLICATION NOTE SH-4 Interface to SDRAM Introduction This application note has been written to aid designers connecting Synchronous Dynamic Random Access Memory SDRAM to the Bus State Controller (BSC) of SH7750S and
|
Original
|
PDF
|
SH7750S
SH7751.
EDS2516ACTA-7A
2x256-Mbit
SE-F080
32-bit/SH-4
Elpida SDRAM
diagram CD 5265 cs
part MARKING hbs
SH7750
SH7751
"content addressable memories" power match precharge
"content addressable memory" power match precharge
"content addressable memories" match precharge
|
Untitled
Abstract: No abstract text available
Text: 256M GDDR3 SDRAM K4J55323QG 256Mbit GDDR3 SDRAM Revision 1.2 March 2006 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
|
Original
|
PDF
|
K4J55323QG
256Mbit
|
TCCR54
Abstract: 74HCu04 oscillator application note TBC10 TR-49 sck tr38
Text: TMP93CF76/CF77/CW76/CU76/CT76 CMOS 16-Bit Microcontroller TMP93CF76/CF77/CW76/CU76/CT76 1. Outline and Feature TMP93CF76/CF77/CW76/CU76/CT76 are a high-speed advanced 16-bit microcontroller developed for application with VCR system control, software servo motor control, VFT driver and
|
Original
|
PDF
|
TMP93CF76/CF77/CW76/CU76/CT76
16-Bit
TMP93CF76/CF77/CW76/CU76/CT76
900/L
TLCS-90
TCCR54
74HCu04 oscillator application note
TBC10
TR-49
sck tr38
|
TMP93CF77
Abstract: TBC10 MPX audio ENCODER sck tr38
Text: TOSHIBA Original CMOS 16-Bit Microcontroller TLCS-900/L Series TMP93CF76 TMP93CF77 TMP93CW76 TMP93CU76 TMP93CT76 Preface Thank you very much for making use of Toshiba microcomputer LSIs. Before use this LSI, refer the section, “Points of Note and Restrictions”.
|
Original
|
PDF
|
16-Bit
TLCS-900/L
TMP93CF76
TMP93CF77
TMP93CW76
TMP93CU76
TMP93CT76
93CF76-228
TBC10
MPX audio ENCODER
sck tr38
|
K4J55323QG-BC20
Abstract: K4J55323QG-BC14 K4J55323QG K4J55323QG-BC12 K4J55323QG-BC16
Text: 256M GDDR3 SDRAM K4J55323QG 256Mbit GDDR3 SDRAM Revision 1.1 November 2005 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
|
Original
|
PDF
|
K4J55323QG
256Mbit
K4J55323QG-BC20
K4J55323QG-BC14
K4J55323QG
K4J55323QG-BC12
K4J55323QG-BC16
|
Untitled
Abstract: No abstract text available
Text: 256M GDDR3 SDRAM K4J55323QG 256Mbit GDDR3 SDRAM Revision 1.3 June 2006 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
|
Original
|
PDF
|
K4J55323QG
256Mbit
|
136ball
Abstract: No abstract text available
Text: 256M GDDR3 SDRAM K4J55323QG-BC 256Mbit GDDR3 SDRAM Revision 1.0 June 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
|
Original
|
PDF
|
K4J55323QG-BC
256Mbit
136ball
|
K4J10324KE-HC1A
Abstract: K4J10324KE-HC14 T21N K4J10324KE k4j10324 K4J10324KE-HC12
Text: Target 1Gb GDDR3 SDRAM K4J10324KE 1Gbit GDDR3 SDRAM 136FBGA with Halogen-Free & Lead-Free RoHS compliant Revision 0.1 December 2008 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
|
Original
|
PDF
|
K4J10324KE
136FBGA
10tCK
10MAX
K4J10324KE-HC1A
K4J10324KE-HC14
T21N
K4J10324KE
k4j10324
K4J10324KE-HC12
|
K4j52324qh-hj1a
Abstract: K4J52324QH-HJ08 K4J52324QH K4J52324QH-HC12 K4J52324Q
Text: Preliminary 512M GDDR3 SDRAM K4J52324QH 512Mbit GDDR3 SDRAM 136FBGA with Halogen-Free & Lead-Free RoHS compliant March 2008 Revision 0.8 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
|
Original
|
PDF
|
K4J52324QH
512Mbit
136FBGA
10MAX
K4j52324qh-hj1a
K4J52324QH-HJ08
K4J52324QH
K4J52324QH-HC12
K4J52324Q
|
K4J52324QC
Abstract: K4J52324QC-bj11
Text: 512M GDDR3 SDRAM K4J52324QC 512Mbit GDDR3 SDRAM Revision 1.5 June 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
|
Original
|
PDF
|
K4J52324QC
512Mbit
r7/08/13
450KB
K4J52324QC-AC200
K4J52324QC-BC140
K4J52324QC-BC200
K4J52324QC-BJ110
K4J52324QC-BJ120
K4J52324QC-BJ1A0
K4J52324QC
K4J52324QC-bj11
|
K4J10324QD
Abstract: k4j10324qd-hj1a K4J10324QD-HC14 K4J10324QD-HC12 GDDR3 SDRAM 256Mb T21N 32MX32 k4j10324qdhj1a gddr3
Text: 1Gb GDDR3 SDRAM K4J10324QD 1Gbit GDDR3 SDRAM 136FBGA with Halogen-Free & Lead-Free RoHS compliant Revision 1.2 May 2008 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
|
Original
|
PDF
|
K4J10324QD
136FBGA
10MAX
K4J10324QD
k4j10324qd-hj1a
K4J10324QD-HC14
K4J10324QD-HC12
GDDR3 SDRAM 256Mb
T21N
32MX32
k4j10324qdhj1a
gddr3
|
K4J52324QE-BC12
Abstract: No abstract text available
Text: 512M GDDR3 SDRAM K4J52324QE 512Mbit GDDR3 SDRAM Revision 1.1 January 2007 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
|
Original
|
PDF
|
K4J52324QE
512Mbit
K4J52324QE-BC12
|
|
|
DDR2 x32
Abstract: No abstract text available
Text: 512M GDDR3 SDRAM K4J52324QC-B 512Mbit GDDR3 SDRAM Revision 1.2 September 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
|
Original
|
PDF
|
K4J52324QC-B
512Mbit
DDR2 x32
|
Untitled
Abstract: No abstract text available
Text: 512M GDDR3 SDRAM K4J52324QC-B 512Mbit GDDR3 SDRAM Revision 1.4 March 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
|
Original
|
PDF
|
K4J52324QC-B
512Mbit
|
K4J52324Qc
Abstract: No abstract text available
Text: 512M GDDR3 SDRAM K4J52324QC 512Mbit GDDR3 SDRAM Revision 1.5 June 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
|
Original
|
PDF
|
K4J52324QC
512Mbit
K4J52324Qc
|
DDR RAM 512M
Abstract: K4J52324QC-BC14 Hynix Cross Reference hynix memory h9 ddr2 K4J52324Q K4J52324QC-BJ12 mark t5n gddr3 K4J52324QC-BC20 K4J52324QC-A
Text: 512M GDDR3 SDRAM K4J52324QC-B 512Mbit GDDR3 SDRAM Revision 1.0 March 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
|
Original
|
PDF
|
K4J52324QC-B
512Mbit
DDR RAM 512M
K4J52324QC-BC14
Hynix Cross Reference
hynix memory h9 ddr2
K4J52324Q
K4J52324QC-BJ12
mark t5n
gddr3
K4J52324QC-BC20
K4J52324QC-A
|
K4j52324qh-hj1a
Abstract: K4J52324QH-HJ08 K4J52324QH K4J52324QH-HC14 K4J52324QH-HJ K4J52324QH-HC12 GDDR3 SDRAM 256Mb K4J52324Q K4J52324QH-HC K4j52324qh-hj0
Text: 512M GDDR3 SDRAM K4J52324QH 512Mbit GDDR3 SDRAM 136FBGA with Halogen-Free & Lead-Free RoHS compliant May 2008 Revision 1.0 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
|
Original
|
PDF
|
K4J52324QH
512Mbit
136FBGA
10MAX
K4j52324qh-hj1a
K4J52324QH-HJ08
K4J52324QH
K4J52324QH-HC14
K4J52324QH-HJ
K4J52324QH-HC12
GDDR3 SDRAM 256Mb
K4J52324Q
K4J52324QH-HC
K4j52324qh-hj0
|
K4J10324KE-HC14
Abstract: K4J10324KE-HC1A K4J10324KE k4j10324 K4J10324KEHC12 k4j10324ke-hc1 T21N K4J10324KE-HC7A K4J10324KE-HC12 gddr3
Text: 1Gb GDDR3 SDRAM K4J10324KE 1Gbit GDDR3 SDRAM 136FBGA with Halogen-Free & Lead-Free RoHS compliant Revision 1.0 May 2009 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
|
Original
|
PDF
|
K4J10324KE
136FBGA
10MAX
K4J10324KE-HC14
K4J10324KE-HC1A
K4J10324KE
k4j10324
K4J10324KEHC12
k4j10324ke-hc1
T21N
K4J10324KE-HC7A
K4J10324KE-HC12
gddr3
|
K4J52324QE-BC12
Abstract: K4J52324QE-BC14 K4J52324QE-BJ1A k4j52324qe K4J52324QEBC14 DDR2 x32 K4J52324Q samsung K4 ddr BJ11 WL02
Text: 512M GDDR3 SDRAM K4J52324QE 512Mbit GDDR3 SDRAM Revision 1.2 May 2007 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
|
Original
|
PDF
|
K4J52324QE
512Mbit
K4J52324QE-BC12
K4J52324QE-BC14
K4J52324QE-BJ1A
k4j52324qe
K4J52324QEBC14
DDR2 x32
K4J52324Q
samsung K4 ddr
BJ11
WL02
|
K4J52324QE-BJ1A
Abstract: K4J52324QE-BC14
Text: 512M GDDR3 SDRAM K4J52324QE 512Mbit GDDR3 SDRAM Revision 1.3 Feb 2008 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
|
Original
|
PDF
|
K4J52324QE
512Mbit
K4J52324QE-BJ1A
K4J52324QE-BC14
|
bc4 bl4 bl8 otf
Abstract: 240 pin DIMM DDR3 through hole
Text: DDR3 Device Operation DDR3 SDRAM Device Operation 1 DDR3 Device Operation Contents 1. Functional Description 1.1 Simplified State Diagram 1.2 Basic Functionality 1.3 RESET and Initialization Procedure 1.3.1 Power-up Initialization Sequence 1.3.2 Reset Initialization with Stable Power
|
Original
|
PDF
|
|
K4J55323QI
Abstract: K4J55323QI-BC14 K4J55323QI-BC12 K4J55323
Text: 256M GDDR3 SDRAM K4J55323QI 256Mbit GDDR3 SDRAM Revision 1.3 May 2007 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
|
Original
|
PDF
|
K4J55323QI
256Mbit
K4J55323QI
K4J55323QI-BC14
K4J55323QI-BC12
K4J55323
|
