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    TC 9310 IC DATA SHEET Search Results

    TC 9310 IC DATA SHEET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NFMJMPC226R0G3D Murata Manufacturing Co Ltd Data Line Filter, Visit Murata Manufacturing Co Ltd
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation

    TC 9310 IC DATA SHEET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RHRG75100

    Abstract: RHRG7570 RHRG7580 RHRG7590
    Text: RHRG7570, RHRG7580, RHRG7590, RHRG75100 Data Sheet 75A, 700V - 1000V Hyperfast Diodes RHRG7570, RHRG7580, RHRG7590 and RHRG75100 TA49068 are hyperfast diodes with soft recovery characteristics (tRR < 85ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ionimplanted epitaxial planar construction.


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    PDF RHRG7570, RHRG7580, RHRG7590, RHRG75100 RHRG7590 TA49068) RHRG75100 RHRG7570 RHRG7580

    40TB10

    Abstract: RHRU50100 RHRU5070 RHRU5080 RHRU5090
    Text: RHRU5070, RHRU5080, RHRU5090, RHRU50100 Data Sheet April 1995 File Number 3665.1 50A, 700V - 1000V Hyperfast Diodes Features RHRU5070, RHRU5080, RHRU5090 and RHRU50100 TA49066 are hyperfast diodes with soft recovery characteristics (tRR < 75ns). They have half the recovery time of


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    PDF RHRU5070, RHRU5080, RHRU5090, RHRU50100 RHRU5090 TA49066) 40TB10 RHRU50100 RHRU5070 RHRU5080

    RHRU75100

    Abstract: RHRU7570 RHRU7580 RHRU7590
    Text: RHRU7570, RHRU7580, RHRU7590, RHRU75100 Data Sheet April 1995 File Number 3925.1 75A, 700V - 1000V Hyperfast Diodes Features RHRU7570, RHRU7580, RHRU7590 and RHRU75100 TA49068 are hyperfast diodes with soft recovery characteristics (tRR < 85ns). They have half the recovery time of


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    PDF RHRU7570, RHRU7580, RHRU7590, RHRU75100 RHRU7590 TA49068) RHRU75100 RHRU7570 RHRU7580

    RHRU5080

    Abstract: RHRU5090 RHRU50100 RHRU5070
    Text: RHRU5070, RHRU5080, RHRU5090, RHRU50100 Data Sheet April 1995 File Number 3665.1 50A, 700V - 1000V Hyperfast Diodes Features RHRU5070, RHRU5080, RHRU5090 and RHRU50100 TA49066 are hyperfast diodes with soft recovery characteristics (tRR < 75ns). They have half the recovery time of


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    PDF RHRU5070, RHRU5080, RHRU5090, RHRU50100 RHRU5090 TA49066) RHRU5080 RHRU50100 RHRU5070

    RHRU75100

    Abstract: RHRU7570 RHRU7580 RHRU7590
    Text: RHRU7570, RHRU7580, RHRU7590, RHRU75100 Data Sheet April 1995 File Number 3925.1 75A, 700V - 1000V Hyperfast Diodes Features RHRU7570, RHRU7580, RHRU7590 and RHRU75100 TA49068 are hyperfast diodes with soft recovery characteristics (tRR < 85ns). They have half the recovery time of


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    PDF RHRU7570, RHRU7580, RHRU7590, RHRU75100 RHRU7590 TA49068) RHRU75100 RHRU7570 RHRU7580

    RHRU5040

    Abstract: RHRU5050 RHRU5060
    Text: RHRU5040, RHRU5050, RHRU5060 Data Sheet April 1995 File Number 3919.1 50A, 400V - 600V Hyperfast Diodes Features RHRU5040, RHRU5050 and RHRU5060 TA49065 are hyperfast diodes with soft recovery characteristics (tRR < 45ns). They have half the recovery time of ultrafast


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    PDF RHRU5040, RHRU5050, RHRU5060 RHRU5050 TA49065) RHRU5040 RHRU5060

    RHRU7540

    Abstract: RHRU7550 RHRU7560
    Text: RHRU7540, RHRU7550, RHRU7560 Data Sheet April 1995 File Number 3945.1 75A, 400V - 600V Hyperfast Diodes Features RHRU7540, RHRU7550 and RHRU7560 TA49067 are hyperfast diodes with soft recovery characteristics (tRR < 55ns). They have half the recovery time of ultrafast


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    PDF RHRU7540, RHRU7550, RHRU7560 RHRU7550 TA49067) RHRU7540 RHRU7560

    RHRU5040

    Abstract: RHRU5050 RHRU5060
    Text: RHRU5040, RHRU5050, RHRU5060 Data Sheet April 1995 File Number 3919.1 50A, 400V - 600V Hyperfast Diodes Features RHRU5040, RHRU5050 and RHRU5060 TA49065 are hyperfast diodes with soft recovery characteristics (tRR < 45ns). They have half the recovery time of ultrafast


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    PDF RHRU5040, RHRU5050, RHRU5060 RHRU5050 TA49065) RHRU5040 RHRU5060

    RHRU7540

    Abstract: RHRU7550 RHRU7560
    Text: RHRU7540, RHRU7550, RHRU7560 Data Sheet April 1995 File Number 3945.1 75A, 400V - 600V Hyperfast Diodes Features RHRU7540, RHRU7550 and RHRU7560 TA49067 are hyperfast diodes with soft recovery characteristics (tRR < 55ns). They have half the recovery time of ultrafast


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    PDF RHRU7540, RHRU7550, RHRU7560 RHRU7550 TA49067) RHRU7540 RHRU7560

    RHRG75100

    Abstract: RHRG7570 RHRG7580 RHRG7590
    Text: RHRG7570, RHRG7580, RHRG7590, RHRG75100 Data Sheet 75A, 700V - 1000V Hyperfast Diodes RHRG7570, RHRG7580, RHRG7590 and RHRG75100 TA49068 are hyperfast diodes with soft recovery characteristics (tRR < 85ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ionimplanted epitaxial planar construction.


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    PDF RHRG7570, RHRG7580, RHRG7590, RHRG75100 RHRG7590 TA49068) RHRG75100 RHRG7570 RHRG7580

    tc 9310

    Abstract: AN7254 AN7260 RFP15N15 TB334
    Text: RFP15N15 Data Sheet October 1998 15A, 150V, 0.150 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,


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    PDF RFP15N15 TB334 TA09195. O-220AB tc 9310 AN7254 AN7260 RFP15N15 TB334

    2N6784

    Abstract: TB334
    Text: 2N6784 Data Sheet April 1998 2.25A, 200V, 1.500 Ohm, N-Channel Power MOSFET • 2.25A, 200V • rDS ON = 1.500Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device


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    PDF 2N6784 O-205AF 2N6784 TB334

    1E14

    Abstract: 2E12 3E12 FRL430R4 JANSR2N7281
    Text: JANSR2N7281 Formerly FRL430R4 Data Sheet Radiation Hardened, N-Channel Power MOSFET November 1998 File Number 4294 Features • 2A, 500V, rDS ON = 2.50Ω The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings


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    PDF JANSR2N7281 FRL430R4 1000K 1E14 2E12 3E12 FRL430R4 JANSR2N7281

    g6n50e

    Abstract: G6N50 HGTD6N40E1 HGTD6N40E1S HGTD6N50E1 HGTD6N50E1S
    Text: HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S 6A, 400V and 500V N-Channel IGBTs March 1997 Features Packages HGTD6N40E1, HGTD6N50E1 JEDEC TO-251AA • 6A, 400V and 500V • VCE ON : 2.5V Max. EMITTER • TFALL: 1.0µs • Low On-State Voltage COLLECTOR


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    PDF HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S HGTD6N50E1 O-251AA O-252AA g6n50e G6N50 HGTD6N40E1 HGTD6N40E1S HGTD6N50E1 HGTD6N50E1S

    G10N50

    Abstract: HGTD10N40F1 HGTD10N40F1S HGTD10N50F1 HGTD10N50F1S HGTD10N40
    Text: HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, HGTD10N50F1S 10A, 400V and 500V N-Channel IGBTs March 1997 Features Packages • 10A, 400V and 500V HGTD10N40F1, HGTD10N50F1 JEDEC TO-251AA • VCE ON 2.5V Max. • TFALL ≤1.4µs EMITTER COLLECTOR GATE • Low On-State Voltage


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    PDF HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, HGTD10N50F1S HGTD10N50F1 O-251AA O-252AA G10N50 HGTD10N40F1 HGTD10N40F1S HGTD10N50F1 HGTD10N50F1S HGTD10N40

    G20N50c

    Abstract: g20n50c1d g20n50 g20N50c1 HGTG20N50 HGTG20N50C1D 20A igbt IGBT Drivers Transistors ACT10 AN7254
    Text: HGTG20N50C1D 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A, 500V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time < 500ns GATE COLLECTOR BOTTOM SIDE METAL • High Input Impedance


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    PDF HGTG20N50C1D O-247 500ns 150oC. G20N50c g20n50c1d g20n50 g20N50c1 HGTG20N50 HGTG20N50C1D 20A igbt IGBT Drivers Transistors ACT10 AN7254

    diode 10a 400v

    Abstract: 200v dc motor igbt ultrafast diode 10a 400v 10N40F1D ge 047 TRANSISTOR HGTP10N40F1D HGTP10N50F1D 10N50F1
    Text: HGTP10N40F1D, HGTP10N50F1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 10A, 400V and 500V JEDEC TO-220AB • Latch Free Operation EMITTER • Typical Fall Time < 1.4µs COLLECTOR GATE • High Input Impedance


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    PDF HGTP10N40F1D, HGTP10N50F1D O-220AB 150oC. diode 10a 400v 200v dc motor igbt ultrafast diode 10a 400v 10N40F1D ge 047 TRANSISTOR HGTP10N40F1D HGTP10N50F1D 10N50F1

    Untitled

    Abstract: No abstract text available
    Text: FSTYC9055D, FSTYC9055R Data Sheet Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


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    PDF FSTYC9055D, FSTYC9055R

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7438 Semiconductor Data Sheet Formerly Available As FSL913A0R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


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    PDF JANSR2N7438 FSL913A0R4, 1-800-4-HARRIS

    1E14

    Abstract: 2E12 FSL923A0R4 JANSR2N7439
    Text: JANSR2N7439 Data Sheet Formerly Available As FSL923A0R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


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    PDF JANSR2N7439 FSL923A0R4, 1E14 2E12 FSL923A0R4 JANSR2N7439

    1E14

    Abstract: 2E12 FSF254R4 JANSR2N7407
    Text: JANSR2N7407 Data Sheet Formerly Available As FSF254R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


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    PDF JANSR2N7407 FSF254R4, 1E14 2E12 FSF254R4 JANSR2N7407

    FSS913A0R4

    Abstract: 2E12 JANSR2N7440
    Text: JANSR2N7440 Data Sheet Formerly Available as FSS913A0R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


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    PDF JANSR2N7440 FSS913A0R4, FSS913A0R4 2E12 JANSR2N7440

    74LS160D

    Abstract: 74LS160PC IC 74LS160 74160PC 74LS160 parallel counter 74LS160P Ls 74160 74LS162D 74162FC logic diagram of 74ls160
    Text: 160 • 162 CONNECTION DIAGRAM \ftoic oïb PINOUT A 54/74160 • 54LS/74LS160 ¿ ,6 ^ /7 4 1 6 2 • 94LS/74LS162 0/co4- / ^SYNCHRONOUS PRESETTABLE BCD DECADE COUNTERS H E îfilv c c C P |7 î ï DESCRIPTION — The ’160 and '162 are high speed synchronous decade


    OCR Scan
    PDF 54LS/74LS160 94LS/74LS162 54/74LS 74LS160D 74LS160PC IC 74LS160 74160PC 74LS160 parallel counter 74LS160P Ls 74160 74LS162D 74162FC logic diagram of 74ls160

    74160PC

    Abstract: 74LS160 parallel counter 74LS160PC BCD Decade logic diagram 74160 74LS160D 74LS162 74LS160DC 74160 74LS162 parallel counter logic diagram of 74ls160
    Text: 160 162 • CO NN ECTIO N DIAGRAM / n i * 54/74160 54LS/74LS160 S4LS/74LS162 ^ ^ 4 /7 4 1 6 2 P IN O U T A \ / ô / o ô ï o / ^S Y N C H R O N O U S PRESETTABLE BCD DECADE COUNTERS DESC R IP TIO N — The ’160 and '162 are high speed synchronous decade


    OCR Scan
    PDF 54LS/74LS160 S4LS/74LS162 S4/74LS 02T30S2 74160PC 74LS160 parallel counter 74LS160PC BCD Decade logic diagram 74160 74LS160D 74LS162 74LS160DC 74160 74LS162 parallel counter logic diagram of 74ls160