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    10N50F1 Search Results

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    10N50F1 Price and Stock

    Rochester Electronics LLC HGTD10N50F1

    IGBT 500V 12A IPAK
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    DigiKey HGTD10N50F1 Bulk 166
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    Rochester Electronics LLC HGTD10N50F1S

    10A, 500V N-CHANNEL IGBT
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    DigiKey HGTD10N50F1S Bulk 329
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    Renesas Electronics Corporation HGTD10N50F1

    - Bulk (Alt: HGTD10N50F1)
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    Avnet Americas HGTD10N50F1 Bulk 4 Weeks 199
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    Renesas Electronics Corporation HGTD10N50F1S

    - Bulk (Alt: HGTD10N50F1S)
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    Avnet Americas HGTD10N50F1S Bulk 4 Weeks 396
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    Renesas Electronics Corporation 10N50F1D

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    10N50F1 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    10N50F1 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    10N50F1D Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    10N50F1S Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    10N50F1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode 10a 400v

    Abstract: HGTP10N50F1D 10N40F1D 10N50F1 HGTP10N40F1D TRI 328 ic HGTP10N50
    Text: HGTP10N40F1D, 10N50F1D S E M I C O N D U C T O R 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 10A, 400V and 500V JEDEC TO-220AB • Latch Free Operation EMITTER • Typical Fall Time < 1.4µs COLLECTOR


    Original     		PDF HGTP10N40F1D, HGTP10N50F1D O-220AB 150oC. 150oC 100oC -50oC diode 10a 400v HGTP10N50F1D 10N40F1D 10N50F1 HGTP10N40F1D TRI 328 ic HGTP10N50

    diode 10a 400v

    Abstract: 200v dc motor igbt ultrafast diode 10a 400v 10N40F1D ge 047 TRANSISTOR HGTP10N40F1D HGTP10N50F1D 10N50F1
    Text: HGTP10N40F1D, 10N50F1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 10A, 400V and 500V JEDEC TO-220AB • Latch Free Operation EMITTER • Typical Fall Time < 1.4µs COLLECTOR GATE • High Input Impedance


    Original     		PDF HGTP10N40F1D, HGTP10N50F1D O-220AB 150oC. diode 10a 400v 200v dc motor igbt ultrafast diode 10a 400v 10N40F1D ge 047 TRANSISTOR HGTP10N40F1D HGTP10N50F1D 10N50F1

    RTO 618 entire

    Abstract: 10N50F1 GE 639 40F1 10n50 10N40F1 DG10N
    Text: l A HARFRIS HGTD10N40F1, HGTD10N40F1S, , R 10N50F1, 10N50F1S l s E M c o N D u c T o 10A, 400V and 500V N-Channel IGBTs Aprii 1995 Features Packages • 10A, 400V and 500V • v CE O N H G TD 10N 40F1, HG TD 10N50F1 J E D E C T O -251A A 2.5V Max.


    OCR Scan     		PDF HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, HGTD10N50F1S 10N50F1 -251A 40F1S -252A RTO 618 entire GE 639 40F1 10n50 10N40F1 DG10N

    10N40F1D

    Abstract: 10N50F1D GE 639 transistor 10n50 10N50F1 HGTP10N50F1D GEP diode RN2512
    Text: HGTP10N40F1D, 10N50F1D îs j h a r r i s t u » ™ 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Aprii 1995 Package Features • 10A, 400V and 500V JEOEC TO-220AB • Latch Free Operation EMITTER • Typical Fall Time < 1.4|iS


    OCR Scan     		PDF HGTP10N40F1D, HGTP10N50F1D O-220AB HGTP10N50F1D 00A/U9 10N40F1D 10N50F1D GE 639 transistor 10n50 10N50F1 GEP diode RN2512