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    TC 4410 Search Results

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    ADA4410-6ACPZ-R7 Analog Devices Select HD/SD S-Vid/CVBS Vid Fi Visit Analog Devices Buy
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    Analog Devices Inc LTC4410ES6#TRMPBF

    IC BATT CHG LI-ION 1CEL TSOT23-6
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    Intel Corporation EPM7032TC44-10

    IC CPLD 32MC 10NS 44TQFP
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    Intel Corporation EPM7064STC44-10

    IC CPLD 64MC 10NS 44TQFP
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    Intel Corporation EPM7032STC44-10

    IC CPLD 32MC 10NS 44TQFP
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    Intel Corporation EPM3032ATC44-10

    IC CPLD 32MC 10NS 44TQFP
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    TC 4410 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    T3441N

    Abstract: No abstract text available
    Text: Technische Information / technical information Netz-Thyristor Phase Control Thyristor T3441N Key Parameters enndaten VDRM / VRRM 4800V … 5200V ITAVM 3200A TC=85°C ITSM vT0 82000A 3570A (TC=55°C) 0,764V rT 0,234mΩ RthJC 4,5K/kW Clamping Force 63 … 91kN


    Original     		PDF T3441N 2000A 100mm 50/60Hz 50/60Hz T3441N

    G12N60B3

    Abstract: HGT1S12N60B3 HGT1S12N60B3S HGT1S12N60B3S9A HGTP12N60B3 HGTP12N60B3D TB334 G12N60B G12N60
    Text: HGTP12N60B3, HGT1S12N60B3, HGT1S12N60B3S Semiconductor 27A, 600V, UFS Series N-Channel IGBTs December 1997 Features Description • 27A, 600V, TC = 25oC The HGTP12N60B3, HGT1S12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the


    Original     		PDF HGTP12N60B3, HGT1S12N60B3, HGT1S12N60B3S HGT1S12N60B3 150oC. 112ns 150oC TB334 G12N60B3 HGT1S12N60B3S HGT1S12N60B3S9A HGTP12N60B3 HGTP12N60B3D TB334 G12N60B G12N60

    Counter

    Abstract: AT91 TC CAPTURE object counter circuit AT91EB40A 0xC000000 Different types of PWM ICs 2682B 26ac
    Text: Pulse Width Modulation Generation Using the AT91 Timer/Counter Introduction This application note describes how to generate a Pulse Width Modulation PWM signal, tunable in frequency and duty cycles, by using the AT91 Timer/Counter (TC). Timer/Counter Overview


    Original     		PDF 16-bit 2682B 03-Oct-03 Counter AT91 TC CAPTURE object counter circuit AT91EB40A 0xC000000 Different types of PWM ICs 26ac

    Untitled

    Abstract: No abstract text available
    Text: Datasheet No.110 KLHC3650W 35W/50W 120LPW/100LPW Packaging Dimensions Related Parts CCT Lumens Typ Imax KLHC3650W 50W 5700 4270-5300 Lm 1440 mA Electrical/Optical Characteristics at Tc = 25°C Parameters Forward Voltage (12 Series) Reverse Current Luminous Flux


    Original     		PDF KLHC3650W 5W/50W 120LPW/100LPW KLHC3650W 5A/38Wtyp KPDS/KLHC3650W 120LPW/100LPW Rev00

    717 MOSFET

    Abstract: No abstract text available
    Text: HGTP12N60B3, HGT1S12N60B3, HGT1S12N60B3S S E M I C O N D U C T O R 27A, 600V, UFS Series N-Channel IGBTs December 1997 Features Description • 27A, 600V, TC = 25oC The HGTP12N60B3, HGT1S12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the


    Original     		PDF HGTP12N60B3, HGT1S12N60B3, HGT1S12N60B3S HGT1S12N60B3 HGT1S12N60B3S 150oC. 1-800-4-HARRIS 717 MOSFET

    Counter

    Abstract: object counter with ldr Advanced Interrupt Controller AIC object counter LDR AT91EB40A AT91 TC CAPTURE
    Text: Interrupt Generation Using the AT91 Timer/Counter Introduction This application note describes how to generate an Interrupt by using the Timer/Counter TC in the AT91 series of microcontrollers. Timer/Counter Overview The AT91 series features a Timer/Counter block, which includes three identical 16-bit


    Original     		PDF 16-bit 2683B Counter object counter with ldr Advanced Interrupt Controller AIC object counter LDR AT91EB40A AT91 TC CAPTURE

    G12N60

    Abstract: 4410 mosfet G12N60b3 HGT1S12N60B3S HGT1S12N60B3S9A HGTP12N60B3 HGTP12N60B3D TB334 TA49171
    Text: HGTP12N60B3, HGT1S12N60B3S Data Sheet January 2000 File Number 4410.2 27A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have


    Original     		PDF HGTP12N60B3, HGT1S12N60B3S HGTP12N60B3 HGT1S12N60B3S 150oC. G12N60 4410 mosfet G12N60b3 HGT1S12N60B3S9A HGTP12N60B3D TB334 TA49171

    nec125

    Abstract: eld4410
    Text: ●●●●●●●●●● ELD-4410 ELD-4410 ●絶対最大定格/Absolute Maximum Rating Item Ta 25℃ Symbol Rating Unit 電源電圧/Power supply voltage Vdd 6 V ランプ出力/Lamp output Vout 220 Vp-p コントロール入力電圧/Hon voltage on


    Original     		PDF ELD4410 ELD4410 Peak250 16cm2 20cm2 20cm2 nec125

    Untitled

    Abstract: No abstract text available
    Text: ELD-4410 ELD-4410 ●絶対最大定格/Absolute Maximum Rating Item Ta 25℃ Symbol Rating Unit 電源電圧/Power supply voltage Vdd 6 V ランプ出力/Lamp output Vout 220 Vp-p コントロール入力電圧/Hon voltage on Von -0.5 V コントロール入力電圧/Hon voltage off


    Original     		PDF ELD4410 Peak250 16cm2 20cm2 20cm2

    eld-4410

    Abstract: No abstract text available
    Text: ELD-4410 シリーズ NEW ELD-4410 Series •絶対最大定格/Absolute Maximum Rating 項目/Item ■外形寸法図/Outline drawing 記号/Symbol 定格/Rating 単位/Unit 電源電圧/Power supply voltage Vdd 6 V ランプ出力/Lamp output Vout 220 Vp-p


    Original     		PDF ELD4410 ELD4410 10sec 16cm2 20cm2 20cm2 eld-4410

    nec125

    Abstract: No abstract text available
    Text: ELD-4410 ELD-4410 •絶対最大定格/Absolute Maximum Rating 項目/Item ■外形寸法図/Outline drawing 記号/Symbol 定格/Rating 単位/Unit 電源電圧/Power supply voltage Vdd 6 V ランプ出力/Lamp output Vout 220 Vp-p コントロール入力電圧/Hon voltage on


    Original     		PDF ELD4410 10sec 16cm2 20cm2 20cm2 nec125

    4410n

    Abstract: ELD-4410 NEC30
    Text: ELD-4410 NEW ELD-4410 •絶対最大定格/Absolute Maximum Rating 項目/Item ■外形寸法図/Outline drawing 記号/Symbol 定格/Rating 単位/Unit 電源電圧 /Power supply voltage Vdd 6 V ランプ出力/Lamp output V out 220 Vp-p コントロール入力電圧/Hon voltage on


    Original     		PDF ELD-4410NEW ELD-4410 10sec 16cm2 20cm2 4410n ELD-4410 NEC30

    26N6500

    Abstract: No abstract text available
    Text: VDSM = 6500 V ITAVM = 2810 A ITRMS = 4410 A ITSM = 45000 A VT0 = 1.12 V rT = 0.290 mΩ Phase Control Thyristor 5STP 26N6500 Doc. No. 5SYA1001-03 Aug.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications


    Original     		PDF 5SYA1001-03 26N6500 26N6500 26N6200 26N5800 67xVDRM 11ing CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 6500 V 2810 A 4410 A 45000 A 1.12 V 0.290 mΩ Ω Phase Control Thyristor 5STP 26N6500 Doc. No. 5SYA1001-03 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications


    Original     		PDF 26N6500 5SYA1001-03 26N6500 26N6200 26N5800 CH-5600

    THERMISTORS nsp 037

    Abstract: Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032
    Text: INDEX OF COMPONENTS A Section/Page No. A.C. Adaptor. Adaptor Kits BNC e tc . Adhesive Tapes. Adhesives, Various. Aerosols.


    OCR Scan     		PDF 200X300X360m THERMISTORS nsp 037 Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032

    Untitled

    Abstract: No abstract text available
    Text: bö£ F 24 a j F • VJSHAV/MA <>*TC r ç r n W w V /n J . . ■*- D IN 44102 TD Q n M b □□□□□5a 24b ■ Regulierbarer Drahtwiderstand Rhéostat-potentiom ètre bobiné Adjustable wirewound resistor s w bet à a at 440Q° C °C Umgebungstemi


    OCR Scan     		PDF

    toshiba multiplexing signal TVs

    Abstract: z80 dot matrix TC514410 TC514410J RAS 0501
    Text: TOSHIBA MEMORY E l e c t r o n ic C o m p o n e n t s B u s in e s s S e c t o r 1 ,0 4 8 ,5 7 6 WORD X 4 BIT DYNAMIC RAM T C 514 4 1 0 J /Z -8 0 T C 514 4 1 O J/Z -10 DESCRIPTION T he TC 51 4410J/Z is the new gene ra ti on dy na mi c R A M o rg anized 1, 04 8,576 w o rd s by 4


    OCR Scan     		PDF TC514410J/Z-80 TC51441OJ/Z-10 TC514410J/Z TC51441OJ/Z-80 toshiba multiplexing signal TVs z80 dot matrix TC514410 TC514410J RAS 0501

    Untitled

    Abstract: No abstract text available
    Text: SFH 4410 SIEMENS LOW POWER LASERDIODE TO 18 PACKAGE P relim in ary Data Sheet FEATURES • In G a A s P /ln P M C R W L a s e rd io d e • E m ission W a v ele n g th : 1 300 nm M a xim u m R atings Output power ratings refer to optimally coupled output power into a 10/125 urn SM fiber. The operating tem perature of


    OCR Scan     		PDF SFH4410

    laptop lcd circuits

    Abstract: HD66780 HD66100 HD66840 lcd ts 240 128 D HD43160AH D61203
    Text: Q u ick Reference Guide Type Column Driver Type Number H D 44100H H D 66100 H D 61100A H 0 6 1 2 00 HD 61104 H D 61104 A HD 66106 HD66107T Power supply for internal circuits V 5 5 5 5 5 5 5 5 Power supply for LCD Drive Circuit (V) 11 6 17 17 26 28 37 37


    OCR Scan     		PDF 44100H 1100A HD66107T Static-1/32 Static-1/16 Static-1/100 FP-60 FP-100 FP-10egm D61603 laptop lcd circuits HD66780 HD66100 HD66840 lcd ts 240 128 D HD43160AH D61203

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs M 5M 44100J, L-8, -10 4 1 9 4 3 0 4 - B IT 4 1 9 4 3 0 4 - WORD BY 1-B IT DYNAM IC RAM D ES C R IP TIO N This is a fam ily o f 4 1 9 4 3 0 4 -w o rd by 1-bit dynam ic RAMs, PIN C O N F IG U R A T IO N (TOP V IE W ) fabricated w ith the high performance CM O S process, and


    OCR Scan     		PDF 44100J,

    CPA11

    Abstract: MCM44100N-70 44100-70
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM44100 MCM4L4100 Advance Information 4M x 1 CMOS Dynamic RAM Fast Page Mode The M C M 44100 is a 0.8n C M O S high-speed dynam ic random access memory. It is organized as 4,194,304 one-bit w ords and fabricated with CM OS siiicon-gate


    OCR Scan     		PDF MCM44100 MCM4L4100 4L4100 MCM44100N60 MCM44100N70 MCM44100N80 MCM4L4100N60 MCM4L4100N70 MCM4L4100N80 MCM44100N60R2 CPA11 MCM44100N-70 44100-70

    4MM75

    Abstract: No abstract text available
    Text: HEWLETT-PACKARD/ V Z ' I H EW LETT ifflJ P A C K A R D CMPNTS blE D • 4 4 4 7 5 Ô 4 UGOTRSO ATF-44100 AT-8141 2-8 ^Hz Medium Power Gallium Arsenide FET Features 751 Chip Outline • High Output Power: 32.0 dBm typical Pi dB at 4 GHz • High Gain at 1 dB Compression:


    OCR Scan     		PDF ATF-44100 AT-8141) ATF-44100 4MM75

    AT-8140

    Abstract: AVANTEK transistor
    Text: AVANTEK GOObSfli =1 • INC 0A Y A N T E K ATF-44101 AT-8140 2-8 GHz Medium Power Gallium Arsenide FET ■ Tv2>l-'2-5 Avantek 100 mil Flange Features • • • • .05 High Output Power: 32.0 dBm typical Pi dB at 4 GHz High Gain at 1 dB Compression: 9.0 dB typical Gi dB at 4 GHz


    OCR Scan     		PDF ATF-44101 AT-8140) F-44101 AT-8140 AVANTEK transistor

    AT-8140

    Abstract: ATF-44101 Avantek S AVANTEK transistor AT8140
    Text: HOE D A V A N T E K INC AVAN TEK Hi l i m i t h QOGbSô'î ATF-44101 AT-8140 2-8 GHz Medium Power Gallium Arsenide FET • ' ' ^ T~-3>l-2 S Avantek 100 mil Flange Features • • • • .05 High Output Power: 32.0 dBm typical Pi dB at 4 GHz High Gain at 1 dB Compression:


    OCR Scan     		PDF ATF-44101 AT-8140) ATF-44101 AT-8140 Avantek S AVANTEK transistor AT8140