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Catalog Datasheet	MFG & Type	Document Tags	PDF
26n5 Abstract: No abstract text available Text: Key Parameters VDSM = 6500 ITAVM = 2650 ITRMS = 4160 ITSM = 45000 VT0 = 1.12 rT = 0.290 V A A A V mΩ Phase Control Thyristor 5STP 26N6500 Doc. No. 5SYA 1001-02 May, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses	Original	26N6500 26N6500 26N6200 26N5800 67xVDRM CH-5600 26n5	PDF
Untitled Abstract: No abstract text available Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 6500 V 2810 A 4410 A 45000 A 1.12 V 0.29 mΩ Ω Phase Control Thyristor 5STP 26N6500 Doc. No. 5SYA1001-03 Jan. 02 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications	Original	26N6500 5SYA1001-03 26N6500 26N6200 26N5800 CH-5600	PDF
26N6500 Abstract: No abstract text available Text: VDSM = 6500 V ITAVM = 2810 A ITRMS = 4410 A ITSM = 45000 A VT0 = 1.12 V rT = 0.290 mΩ Phase Control Thyristor 5STP 26N6500 Doc. No. 5SYA1001-03 Aug.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications	Original	5SYA1001-03 26N6500 26N6500 26N6200 26N5800 67xVDRM 11ing CH-5600	PDF
Untitled Abstract: No abstract text available Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 6500 V 2810 A 4410 A 45000 A 1.12 V 0.290 mΩ Ω Phase Control Thyristor 5STP 26N6500 Doc. No. 5SYA1001-03 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications	Original	26N6500 5SYA1001-03 26N6500 26N6200 26N5800 CH-5600	PDF