Untitled
Abstract: No abstract text available
Text: ADVANCED 16M 2-Bank x 524,288-Word x 16-Bit Synchronous DRAM F EATURES • • • • • • • • • OPTIONS GENERAL DESCRIPTION APR. 2007 (Rev.2.9) F D Read (READ) [RAS = H, CAS = L, WE = H] Write (WRITE) [RAS = H, CAS =WE = L] CLK CS Chip Select: L=select, h=deselect
|
Original
|
PDF
|
288-Word
16-Bit)
|
M5M4V4S40CTP-12
Abstract: No abstract text available
Text: MITSUBISHI LSIs SDRAM Rev. 0.3 M5M4V4S40CTP-12, -15 Feb ‘97 Preliminary 4M (2-BANK x 131072-WORD x 16-BIT) Synchronous DRAM PRELIMINARY Some of contents are described for general products and are subject to change without notice. DESCRIPTION FEATURES - Single 3.3v±0.3v power supply
|
Original
|
PDF
|
M5M4V4S40CTP-12,
131072-WORD
16-BIT)
83MHz
67MHz
M5M4V4S40CTP-12
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs SDRAM Rev. 0.0 M5M4V4S40DTP-8, -10, -12 June‘98 Preliminary 4M (2-BANK x 131072-WORD x 16-BIT) Synchronous DRAM PRELIMINARY Some of contents are described for general products and are subject to change without notice. DESCRIPTION FEATURES
|
Original
|
PDF
|
M5M4V4S40DTP-8,
131072-WORD
16-BIT)
M5M4V4S40DTP
072-word
16-bit
125MHz,
|
making a10
Abstract: M2V56S20 M2V56S20AKT M2V56S30AKT M2V56S40AKT
Text: SDRAM Rev.1.01 Single Data Rate MITSUBISHI LSIs M2V56S20/ 30/ 40 AKT -5, -6, -7 July '01 256M Synchronous DRAM Some of contents are subject to change without notice. DESCRIPTION M2V56S20AKT is a 4-bank x 16777216-word x 4-bit, M2V56S30AKT is a 4-bank x 8388608-word x 8-bit,
|
Original
|
PDF
|
M2V56S20/
M2V56S20AKT
16777216-word
M2V56S30AKT
8388608-word
M2V56S40AKT
4194304-word
16-bit,
M2V56S20/30/40
100MHz
making a10
M2V56S20
|
making a10
Abstract: M2V56S20 M2V56S20ATP M2V56S30ATP M2V56S40ATP a10 da1
Text: SDRAM Rev.1.01 Single Data Rate MITSUBISHI LSIs M2V56S20/ 30/ 40 ATP -5, -6, -7 Jul '01 256M Synchronous DRAM Some of contents are subject to change without notice. DESCRIPTION M2V56S20ATP is a 4-bank x 16777216-word x 4-bit, M2V56S30ATP is a 4-bank x 8388608-word x 8-bit,
|
Original
|
PDF
|
M2V56S20/
M2V56S20ATP
16777216-word
M2V56S30ATP
8388608-word
M2V56S40ATP
4194304-word
16-bit,
M2V56S20/30/40ATP
100MHz
making a10
M2V56S20
a10 da1
|
M2V56S20
Abstract: M2V56S20TP M2V56S30TP M2V56S40TP
Text: MITSUBISHI LSIs SDRAM Rev.1.0 Single Data Rate M2V56S20/ 30/ 40/ TP -6, -7, -8 July.'99 256M Synchronous DRAM Some of contents are subject to change without notice. DESCRIPTION M2V56S20TP is a 4-bank x 16777216-word x 4-bit, M2V56S30TP is a 4-bank x 8388608-word x 8-bit,
|
Original
|
PDF
|
M2V56S20/
M2V56S20TP
16777216-word
M2V56S30TP
8388608-word
M2V56S40TP
4194304-word
16-bit,
M2V56S20/30/40TP
100MHz
M2V56S20
|
sdr sdram reference
Abstract: M2V64S50ETP
Text: SDR SDRAM E0342M21 Ver.2.1 February 2004 (K) Japan PRELIMINARY DATA SHEET M2V64S50ETP 64M Single Data Rate Synchronous DRAM DESCRIPTION M2V64S50ETP is a 4-bank x 524,288-word x 32-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK.
|
Original
|
PDF
|
E0342M21
M2V64S50ETP
M2V64S50ETP
288-word
32-bit,
100MHz
133MHz
166MHz
M01E0107
sdr sdram reference
|
EM639165
Abstract: EM639165TS EM639
Text: EtronTech EM639165 8Mega x 16bits SDRAM Preliminary Rev 1.0, 2/2001 Features Pin Assignment (Top View) • Single 3.3 ± 0.3V power supply • Fast clock rate - PC133: 133 MHz (CL3) - PC100: 100 MHz (CL2) • Fully synchronous operation referenced to clock
|
Original
|
PDF
|
EM639165
16bits
PC133:
PC100:
cycles/64ms
54-pin
EM639165
EM639165TS
EM639
|
TSOP 54 PIN
Abstract: No abstract text available
Text: IS42S83200A 4-bank x 8,388,608 - word x 8-bit IS42S16160A (4-bank x 4,194,304 - word x 16-bit) ISSI 256 Mb Synchronous DRAM January 2005 DESCRIPTION IS42S83200A is a synchronous 128Mb SDRAM and is organized as 4-bank x 8,388,608-word x 8-bit; and IS42S16160A is organized as 4-bank x 4,194,304-word x
|
Original
|
PDF
|
IS42S83200A
IS42S16160A
16-bit)
IS42S83200A
128Mb
608-word
IS42S16160A
304-word
16-bit.
TSOP 54 PIN
|
IS42S16160A
Abstract: 42S83200A IS42S83200A IS42S16160A-7TL
Text: IS42S83200A 4-bank x 8,388,608 - word x 8-bit IS42S16160A (4-bank x 4,194,304 - word x 16-bit) ISSI 256 Mb Synchronous DRAM November 2005 DESCRIPTION IS42S83200A is a synchronous 256Mb SDRAM and is organized as 4-bank x 8,388,608-word x 8-bit; and IS42S16160A is organized as 4-bank x 4,194,304-word x
|
Original
|
PDF
|
IS42S83200A
IS42S16160A
16-bit)
IS42S83200A
256Mb
608-word
IS42S16160A
304-word
16-bit.
42S83200A
IS42S16160A-7TL
|
Untitled
Abstract: No abstract text available
Text: SDR SDRAM E0342M21 Ver.2.1 February 2004 (K) Japan PRELIMINARY DATA SHEET M2V64S50ETP 64M Single Data Rate Synchronous DRAM DESCRIPTION M2V64S50ETP is a 4-bank x 524,288-word x 32-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK.
|
Original
|
PDF
|
E0342M21
M2V64S50ETP
M2V64S50ETP
288-word
32-bit,
100MHz
133MHz
166MHz
M01E0107
|
making a10
Abstract: M2V56S20TP M2V56S30TP M2V56S40TP M2V56S20
Text: SDRAM Rev.1.1 Single Data Rate MITSUBISHI LSIs M2V56S20/ 30/ 40/ TP -6, -7, -8 Feb.2000 256M Synchronous DRAM Some of contents are subject to change without notice. DESCRIPTION M2V56S20TP is a 4-bank x 16777216-word x 4-bit, M2V56S30TP is a 4-bank x 8388608-word x 8-bit,
|
Original
|
PDF
|
M2V56S20/
M2V56S20TP
16777216-word
M2V56S30TP
8388608-word
M2V56S40TP
4194304-word
16-bit,
M2V56S20/30/40TP
100MHz
making a10
M2V56S20
|
Untitled
Abstract: No abstract text available
Text: IS42S83200A 4-bank x 8,388,608 - word x 8-bit IS42S16160A (4-bank x 4,194,304 - word x 16-bit) ISSI 256 Mb Synchronous DRAM July 2005 DESCRIPTION IS42S83200A is a synchronous 128Mb SDRAM and is organized as 4-bank x 8,388,608-word x 8-bit; and IS42S16160A is organized as 4-bank x 4,194,304-word x
|
Original
|
PDF
|
IS42S83200A
IS42S16160A
16-bit)
IS42S83200A
128Mb
608-word
IS42S16160A
304-word
16-bit.
|
IS42S83200A1
Abstract: IS42S16160A1-7TL
Text: ISSI IS42S83200A1 4-bank x 8,388,608 - word x 8-bit IS42S16160A1 (4-bank x 4,194,304 - word x 16-bit) 256 Mb Synchronous DRAM October 2005 DESCRIPTION IS42S83200A1 is a synchronous 256Mb SDRAM and is organized as 4-bank x 8,388,608-word x 8-bit; and IS42S16160A1 is organized as 4-bank x 4,194,304-word x
|
Original
|
PDF
|
IS42S83200A1
IS42S16160A1
16-bit)
IS42S83200A1
256Mb
608-word
IS42S16160A1
304-word
16-bit.
IS42S16160A1-7TL
|
|
|
M2V56S20
Abstract: M2V56S20AKT M2V56S30AKT M2V56S40AKT
Text: MITSUBISHI LSIs SDRAM Rev.1.1 Single Data Rate M2V56S20/ 30/ 40 AKT -5, -5L, -6, -6L, -7, -7L Aug '01 256M Synchronous DRAM Some of contents are subject to change without notice. DESCRIPTION M2V56S20AKT is a 4-bank x 16777216-word x 4-bit, M2V56S30AKT is a 4-bank x 8388608-word x 8-bit,
|
Original
|
PDF
|
M2V56S20/
M2V56S20AKT
16777216-word
M2V56S30AKT
8388608-word
M2V56S40AKT
4194304-word
16-bit,
M2V56S20/30/40AKT
100MHz
M2V56S20
|
TSOP 66 Package
Abstract: No abstract text available
Text: MITSUBISHI LSIs M2V28S20/ 30/ 40 CTP M2V28S20/ 30/ 40 CKT SDRAM Rev.0.3E Single Data Rate Sep. '02 Preliminary 128M Synchronous DRAM Contents are subject to change without notice. DESCRIPTION M2V28S20CTP/ KT is a 4-bank x 8388608-word x 4-bit, M2V28S30CTP/ KT is a 4-bank x 4194304-word x 8-bit,
|
Original
|
PDF
|
M2V28S20/
M2V28S20CTP/
8388608-word
M2V28S30CTP/
4194304-word
M2V28S40CTP/
2097152-word
16-bit,
M2V28S20/30/40C
TSOP 66 Package
|
M2V56S20
Abstract: M2V56S20ATP M2V56S30ATP M2V56S40ATP
Text: MITSUBISHI LSIs M2V56S20/ 30/ 40 ATP M2V56S20/ 30/ 40 AKT SDRAM Rev.1.31 Single Data Rate Apr. '02 256M Synchronous DRAM Contents are subject to change without notice. DESCRIPTION M2V56S20ATP/ KT is a 4-bank x 16777216-word x 4-bit, M2V56S30ATP/ KT is a 4-bank x 8388608-word x 8-bit,
|
Original
|
PDF
|
M2V56S20/
M2V56S20ATP/
16777216-word
M2V56S30ATP/
8388608-word
M2V56S40ATP/
4194304-word
16-bit,
M2V56S20/30/40AKT
M2V56S20
M2V56S20ATP
M2V56S30ATP
M2V56S40ATP
|
GLT540L16-10TC
Abstract: BA QB GLT5160L16
Text: GLT540L16 ADVANCED 4M 2-Bank x 131072-Word x 16-Bit Synchronous DRAM FEATURES ◆ Single 3.3 V ± 0.3 V power supply ◆ Clock frequency 100 MHz / 125 MHz / 143 MHz/ 166 MHz ◆ Fully synchronous operation referenced to clock rising edge ◆ Dual bank operation controlled by BA (Bank
|
Original
|
PDF
|
GLT540L16
131072-Word
16-Bit)
400-mil,
50-Pin
GLT540L16-10TC
BA QB
GLT5160L16
|
sdr sdram reference
Abstract: sdr sdram
Text: SDR SDRAM E0364M20 Ver.2.0 (Previous Rev.0.3e) June 2004 (K) Japan DATA SHEET M2V64S50ETP-I 64M Single Data Rate Synchronous DRAM WTR (Wide Temperature Range) DESCRIPTION M2V64S50ETP-I is a 4-bank x 524,288-word x 32-bit, synchronous DRAM, with LVTTL interface.
|
Original
|
PDF
|
E0364M20
M2V64S50ETP-I
M2V64S50ETP-I
288-word
32-bit,
100MHz
133MHz
M01E0107
sdr sdram reference
sdr sdram
|
M5M4V64S30ATP-10
Abstract: M5M4V64S30ATP-8 M5M4V64S30ATP-8A M511
Text: MITSUBISHI LSIs SDRAM Rev.1.3 Mar'98 M5M4V64S30ATP-8A,-8L,-8, -10L, -10 64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM Some of contents are subject to change without notice. The M5M4V64S30ATP is a 4-bank x 2097152-word x 8-bit Synchronous DRAM, with LVTTL interface. All inputs and
|
Original
|
PDF
|
M5M4V64S30ATP-8A
2097152-WORD
M5M4V64S30ATP
125MHz,
125MHz
/100MHz
M5M4V64S30ATP-10
M5M4V64S30ATP-8
M511
|
Untitled
Abstract: No abstract text available
Text: SDR SDRAM E0364M11 Ver.1.1 (Previous Rev.0.3e) February 2004 (K) Japan PRELIMINARY DATA SHEET M2V64S50ETP-I 64M Single Data Rate Synchronous DRAM WTR (Wide Temperature Range) DESCRIPTION M2V64S50ETP-I is a 4-bank x 524,288-word x 32-bit, synchronous DRAM, with LVTTL interface.
|
Original
|
PDF
|
E0364M11
M2V64S50ETP-I
M2V64S50ETP-I
288-word
32-bit,
100MHz
133MHz
M01E0107
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs SDRAM Rev.1.45 Single Data Rate M2V56S20/ 30/ 40 TP -5, -5L, -6, -6L, -7, -7L May.2001 256M Synchronous DRAM Some of contents are subject to change without notice. DESCRIPTION M2V56S20TP is a 4-bank x 16777216-word x 4-bit, M2V56S30TP is a 4-bank x 8388608-word x 8-bit,
|
Original
|
PDF
|
M2V56S20/
M2V56S20TP
16777216-word
M2V56S30TP
8388608-word
M2V56S40TP
4194304-word
16-bit,
M2V56S20/30/40TP
100MHz
|
M5M4V64S40ATP-8A
Abstract: No abstract text available
Text: MITSUBISHI LSIs SDRAM Rev.1.3 Mar'98 M5M4V64S40ATP-8A,-8L,-8, -10L, -10 64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM Some of contents are subject to change without notice. The M5M4V64S40ATP is a 4-bank x 1048576-word x 16-bit Synchronous DRAM, with LVTTL interface. All inputs and
|
Original
|
PDF
|
M5M4V64S40ATP-8A
1048576-WORD
16-BIT)
M5M4V64S40ATP
16-bit
125MHz,
125MHz
/100MHz
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs SDRAM Rev.1.1 MITSUBISHI Single Data Rate M2V12S20/ 30/ 40 TP -6, -6L, -7, -7L ELECTRIC Feb. '02 512M Synchronous DRAM DESCRIPTION M2V12S20TP is a 4-bank x 33,554,432-word x 4-bit, M2V12S30TP is a 4-bank x 16,777,216-word x 8-bit, M2V12S40TP is a 4-bank x 8,388,608-word x 16-bit,
|
Original
|
PDF
|
M2V12S20/
M2V12S20TP
432-word
M2V12S30TP
216-word
M2V12S40TP
608-word
16-bit,
M2V12S20/30/40TP
100MHz
|
