Untitled
Abstract: No abstract text available
Text: i I Jt QQ1737C( U U il tbS3131‘ fl • - 2SE D N AMER PHILIPS/DISCRETE Jl 1N957B to 1N973B T -II-0 ? 400 mW ZENER DIODES Silicon planar diodes in DO-35 packages intended fo r use as low power voltage stabilizers or voltage references. The series consists o f 17 types w ith nominal working voltages ranging from 6.8 to 33 V.
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tbS3131â
QQ1737C(
1N957B
1N973B
DO-35
DO-35.
1N965B
1N966B
1N967B
1N968B
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE 25E D • tbS3131 Q01b23b T ■ V -W -O l Surface Mount Devices GENERAL PURPOSE TRANSISTORS, NPN hFE V C E s at tf PINOUT m inJm ax. a t I c /V c e m A/V max. a tlc / le ty p SECTION MHZ VI RATINGS TYPE PACKAGE V cEQ V V cBO •c
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tbS3131
Q01b23b
BC868
BCP68
BC818-16
BC818-25
BC818-40
OT-89
T-223
OT-23
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TRIAC BR100
Abstract: BR100/03 Thyristor mw 134 BR100
Text: QG271S5 531 HIAPX N AMER PHILIPS/DISCRETE b^E D rnmps aemiconauciors_ _ Krenminary specification Silicon bi-directional trigger device BR100/03 DESCRIPTION Silicon bi-directional trigger device intended for use in triac and thyristor
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QG271S5
BR100/03
DO-35)
tbS3131
G0271S3
BR100
ULt37'
TRIAC BR100
BR100/03
Thyristor mw 134
BR100
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Untitled
Abstract: No abstract text available
Text: DEVELOPMENT DATA BYV133F SERIES This data sheet contains advance information and specifications are subject to change without notice. N AUER PHILIPS/DISCRETE 2SE D • bb53T31 QQ2270T 2 ■ SCHOTTKY-BARRIER ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES Low-leakage, platinum-barrier double rectifier diodes in SOT-186 full-pack plastic envelopes
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BYV133F
bb53T31
QQ2270T
OT-186
T-03-19
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philips ET-E 60
Abstract: No abstract text available
Text: E5E T> m bb53*131 OOaaa1^ fi BY229 SERIES N AMER PHILIPS/DISCRETE 7 = 0 3 -/ 7 FAST SOFT-RECOVERY RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in plastic envelopes, featuring fast reverse recovery times and non-snap-off characteristics. They are intended fo r use in chopper applications as well as in
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BY229
BY229â
CbbS3T31
T-03-17
bbS3T31
0Q22302
philips ET-E 60
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE 35E D • bbS3T31 D01flbT3 4 I BUP23B BUP23C T - 3 3 - f S' -SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a SOT93 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.
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bbS3T31
D01flbT3
BUP23B
BUP23C
BUP22B
BUP23Cresp;
BUP23B;
BUP23C.
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bf964
Abstract: bf964 in vhf mixer TRANSISTOR r315 r315 TRANSISTOR mosfet BF964 PHILIPS MOSFET MARKING R315
Text: N AMER PHILIPS/DISCRETE ObE D • fc,fa53i31 0012150 h ■ _ „ B BF964; _ A_ _ T-Jt-as" SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected, intended fo r v.h.f. applications in television tuners, especially in r.f. stages and m ixer stages in S-channel
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BF964:
bf964
bf964 in vhf mixer
TRANSISTOR r315
r315 TRANSISTOR
mosfet BF964
PHILIPS MOSFET MARKING
R315
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Untitled
Abstract: No abstract text available
Text: • bbS3T31 QQ23ti2S 353 ■ APX BF994S N AP1ER PHILIPS/DISCRETE b7E D J V SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended fo r V H F applications in television tuners.
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bbS3T31
QQ23ti2S
BF994S
OT143
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sot199
Abstract: BDV64F lem HA BDV64AF BDV64BF BDV64CF BDV65F USB012 BDV64 B0V64B
Text: Philips Com ponents BDV64F/64AF/64BF/64CF PNP Silicon Darlington power transistors PINNING - SOT199 DESCRIPTION DESCRIPTION PIN 1 2 3 PNP epitaxial base transistors in a monolithic Darlington circuit for audio output stages and general amplifier and switching applications.
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BDV64F/64AF/64BF/64CF
BDV65F/
65AF/65BF/65CF.
OT199
BDV64F
BDV64AF
BDV64BF
BDV64CF
sot199
lem HA
BDV65F
USB012
BDV64
B0V64B
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