EFD36
Abstract: EEFL efd-36 TR04111002 transformer 1mA TMS90203CS eefl inverter high power FERRITE TRANSFORMER
Text: TURNS RATIO: MECHANICAL DIMENSIONS: mm PRI:SEC:=TBD ELECTRICAL CHARACTERISTICS: at 25 ° C 71.0 Max 1) INDUCTANCE: L(9-10): TBD @1KHz,1V L(1,2,-7,8): TBD @1KHz,1V 2) DC RESISTANCE: DCR(9-10): TBD DCR(1,2,-7,8): TBD 3) HI-POT: PRI TO SEC: 1500Vac,1mA MAX @50Hz,1Sec
|
Original
|
PDF
|
1500Vac
EFD36
TR04111002
TMS90203CS
EEFL
efd-36
TR04111002
transformer 1mA
TMS90203CS
eefl inverter
high power FERRITE TRANSFORMER
|
EEFL
Abstract: 6020h 6020H-2 ferrite core transformer ratio 5 inverter FERRITE TRANSFORMER design eefl inverter TMS90202CS EE-34
Text: TURNS RATIO: PRI:SEC:=TBD ELECTRICAL CHARACTERISTICS: at 25 ° C MECHANICAL DIMENSIONS: mm A:53.0 MAX 7 6 4 1) INDUCTANCE: L(8-7): TBD @1KHz,1V L(1,2,3-4,5,6): TBD @1KHz,1V 2) DC RESISTANCE: DCR(8-7): TBD DCR(1,2,3-4,5,6): TBD 3) HI-POT: PRI TO SEC: 1500Vac,1mA MAX @50Hz,1Sec
|
Original
|
PDF
|
1500Vac
6020H-2
TR04102201
TMS90202CS
EEFL
6020h
ferrite core transformer ratio 5
inverter FERRITE TRANSFORMER design
eefl inverter
TMS90202CS
EE-34
|
Untitled
Abstract: No abstract text available
Text: IX150T06M-AG tentative Trench XPT IGBT Chip Type VCE [V] IC [A] IX150T06M-AG 650 300 Chip Size [mm] x [mm] 14.2 10.6 Package Ordering Code sawn on foil tbd unsawn wafer tbd in waffle pack tbd Features / Advantages: Applications: ● Easy paralleling due to the positive temperature
|
Original
|
PDF
|
IX150T06M-AG
60747and
|
Untitled
Abstract: No abstract text available
Text: IX112T06M-AG tentative Trench XPT IGBT Chip Type VCE [V] IC [A] IX112T06M-AG 650 200 Chip Size [mm] x [mm] 10.6 10.6 Package Ordering Code sawn on foil tbd unsawn wafer tbd in waffle pack tbd Features / Advantages: Applications: ● Easy paralleling due to the positive temperature
|
Original
|
PDF
|
IX112T06M-AG
interconnect360
60747and
|
Untitled
Abstract: No abstract text available
Text: 600 V, TBD A, IGBT FGD633 Preliminary Features Package Low Saturation Voltage High Speed Switching With Integrated Low VF Fast Recovery Diode RoHS Compliant TO-3PF-3L VCE - 600 V IC-TBD A TC = 100 °C
|
Original
|
PDF
|
FGD633
FGD633-DS
|
Untitled
Abstract: No abstract text available
Text: APPROVED PD - TBD IRFP17N50L SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS Zero Voltage Switching (ZVS) and High Frequency Circuit Uninterruptible Power Supply High Speed Power Switching PWM Inverters l l l l VDSS 500V RDS(on) typ.
|
Original
|
PDF
|
IRFP17N50L
170ns
O-247AC
|
VRF2933FL
Abstract: VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
Text: Power Products MICROSEMI POWER PORTFOLIOPortfolio 2014-2015 Power Products New image here TBD Power Semiconductors Power Modules RF Power MOSFETs Power Matters. About Microsemi Microsemi Corporation Nasdaq: MSCC offers a comprehensive portfolio of semiconductor and system
|
Original
|
PDF
|
MS5-001-14
VRF2933FL
VRF164FL
ARF463AP1
Non - Isolated Buck, application
DRF1301
|
mosfet ms 1307
Abstract: D793 IRF7946TRPBF BLDC motor drive
Text: APPROVED NOT RELEASED PD - TBD StrongIRFET IRF7946PbF Applications l l l l l l l l l DirectFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications
|
Original
|
PDF
|
IRF7946PbF
JESD47F
TD-020D)
mosfet ms 1307
D793
IRF7946TRPBF
BLDC motor drive
|
ASJD1200R045
Abstract: SiC JFET JFET semisouth silicon carbide JFET SJDP120R045 silicon carbide j-fet SEMISOUTH semisouth JFET VGS15V TO258
Text: ADVANCE INFORMATION SiC JFET ASJD1200R045 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS ON max 0.045 V : ETS,typ TBD J Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory)
|
Original
|
PDF
|
ASJD1200R045
O-258
260oC
MIL-PRF-19500
MIL-STD-750
O-258
SJDP120R045
O-247
ASJD1200R045
SiC JFET
JFET semisouth
silicon carbide JFET
silicon carbide j-fet
SEMISOUTH
semisouth JFET
VGS15V
TO258
|
SiC JFET
Abstract: JFET semisouth SJDP120R045 5A JFET ASJD1200R045 SEMISOUTH SJDP
Text: ADVANCED INFORMATION SiC JFET ASJD1200R045 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS ON max 0.045 V : ETS,typ TBD J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory)
|
Original
|
PDF
|
ASJD1200R045
O-257
260oC
MIL-PRF-19500
MIL-STD-750
O-257
SJDP120R045
O-247
ASJD1200R045
SiC JFET
JFET semisouth
5A JFET
SEMISOUTH
SJDP
|
SEMISOUTH
Abstract: JFET semisouth SiC JFET semisouth JFET SJDP120R085
Text: ADVANCED INFORMATION SiC JFET ASJD1200R085 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS ON max 0.085 V : ETS,typ TBD J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory)
|
Original
|
PDF
|
ASJD1200R085
O-257
260oC
MIL-PRF-19500
MIL-STD-750
O-257
SJDP120R085
O-247
ASJD1200R085
SEMISOUTH
JFET semisouth
SiC JFET
semisouth JFET
|
IRHM7360SE
Abstract: JANSR2N7391
Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1224A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR IRHM7360SE JANSR2N7391 [REF:MIL-PRF-195000/TBD] N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω, (SEE) RAD HARD HEXFET
|
Original
|
PDF
|
IRHM7360SE
JANSR2N7391
MIL-PRF-195000/TBD]
IRHM7360SE
JANSR2N7391
|
Untitled
Abstract: No abstract text available
Text: PACKAGE OPTION ADDENDUM www.ti.com 17-Oct-2005 PACKAGING INFORMATION Orderable Device Status 1 Package Type Package Drawing Pins Package Eco Plan (2) Qty Lead/Ball Finish MSL Peak Temp (3) SN5445J ACTIVE CDIP J 16 1 TBD Call TI Level-NC-NC-NC SN7445N ACTIVE
|
Original
|
PDF
|
17-Oct-2005
SN5445J
SN7445N
SN7445N3
SN7445NE4
SN7445NSR
|
dtl ttl logic DIGITAL CROSS-REFERENCE GUIDE
Abstract: SN74145N
Text: PACKAGE OPTION ADDENDUM www.ti.com 26-Sep-2005 PACKAGING INFORMATION Orderable Device Status 1 Package Type Package Drawing Pins Package Eco Plan (2) Qty Lead/Ball Finish MSL Peak Temp (3) 85084012A ACTIVE LCCC FK 20 1 TBD Call TI Level-NC-NC-NC 8508401EA
|
Original
|
PDF
|
26-Sep-2005
5084012A
8508401EA
8508401FA
SN54LS145J
SN74145N
dtl ttl logic DIGITAL CROSS-REFERENCE GUIDE
|
|
|
IRHM7360SE
Abstract: JANSR2N7391
Text: Provisional Data Sheet No. PD-9.1224A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR IRHM7360SE JANSR2N7391 [REF:MIL-PRF-195000/TBD] N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω, (SEE) RAD HARD HEXFET 400 Volt, 0.20Ω International Rectifier’s (SEE) RAD HARD technology
|
Original
|
PDF
|
IRHM7360SE
JANSR2N7391
MIL-PRF-195000/TBD]
IRHM7360SE
JANSR2N7391
|
SN-74LS153N
Abstract: SN74LS153N SN74LS153N texas
Text: PACKAGE OPTION ADDENDUM www.ti.com 26-Sep-2005 PACKAGING INFORMATION Orderable Device Status 1 Package Type Package Drawing Pins Package Eco Plan (2) Qty Lead/Ball Finish MSL Peak Temp (3) 76011012A ACTIVE LCCC FK 20 1 TBD Call TI Level-NC-NC-NC 7601101EA
|
Original
|
PDF
|
26-Sep-2005
6011012A
7601101EA
7601101FA
JM38510/07902BEA
JM38510/07902BFA
SN-74LS153N
SN74LS153N
SN74LS153N texas
|
40-16NO1
Abstract: guo 40 40-08NO1 4012-N
Text: GUO 40 Advanced Technical Information Three Phase Rectifier Bridge VRSM V VRRM V Standard Types Ordering No. 900 800 GUO 40-08NO1 tbd 1300 1200 GUO 40-12NO1 504430 1700 1600 GUO 40-16NO1 504437 IDAVM = 40 A VRRM = 800-1600 V + ~ ~ ~ ~ ~ - ~ + IGBTs Symbol
|
Original
|
PDF
|
40-08NO1
40-12NO1
40-16NO1
00-1600V
40-16NO1
guo 40
40-08NO1
4012-N
|
ASJD1200R085
Abstract: SiC JFET SJDP120R085 JFET semisouth SEMISOUTH silicon carbide j-fet SJDP silicon carbide JFET JFET semisouth Semisouth, SJDP120R085
Text: ADVANCE INFORMATION SiC JFET ASJD1200R085 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS ON max 0.085 V : ETS,typ TBD J Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory)
|
Original
|
PDF
|
ASJD1200R085
O-258
260oC
MIL-PRF-19500
MIL-STD-750
O-258
SJDP120R085
O-247
ASJD1200R085
SiC JFET
JFET semisouth
SEMISOUTH
silicon carbide j-fet
SJDP
silicon carbide JFET
JFET semisouth Semisouth, SJDP120R085
|
SN74LS138P
Abstract: SN74LS138N
Text: PACKAGE OPTION ADDENDUM www.ti.com 26-Sep-2005 PACKAGING INFORMATION Orderable Device Status 1 Package Type Package Drawing Pins Package Eco Plan (2) Qty Lead/Ball Finish MSL Peak Temp (3) 76005012A ACTIVE LCCC FK 20 1 TBD Call TI Level-NC-NC-NC 7600501EA
|
Original
|
PDF
|
26-Sep-2005
6005012A
7600501EA
7600501FA
6041012A
7604101EA
SN74LS138P
SN74LS138N
|
4x4 matrix keypad
Abstract: 4x4 matrix keypad and diagram simple EZ328 4x4 matrix keypad block diagram interfacing keyboard matrix 4x4 matrix keypad and diagram 4x4 matrix keypad operation datasheet for 4x4 keyboard datasheet keypad 4x4 4x4 keypad scanning
Text: Freescale Semiconductor, Inc. Order this document by TBD DragonBall Operation Preliminary Application Note Minimum I/O to Matrix Keyboard with DragonBallTM EZ328 Freescale Semiconductor, Inc. INTRODUCTION This note describes an method of interfacing a matrix keyboard to EZ328 using minimum number of I/O ports.
|
Original
|
PDF
|
EZ328
EZ328
0x00080000)
MC68328
4x4 matrix keypad
4x4 matrix keypad and diagram simple
4x4 matrix keypad block diagram
interfacing keyboard matrix
4x4 matrix keypad and diagram
4x4 matrix keypad operation
datasheet for 4x4 keyboard
datasheet keypad 4x4
4x4 keypad scanning
|
Untitled
Abstract: No abstract text available
Text: PACKAGE OPTION ADDENDUM www.ti.com 17-Oct-2005 PACKAGING INFORMATION Orderable Device Status 1 Package Type Package Drawing Pins Package Eco Plan (2) Qty Lead/Ball Finish MSL Peak Temp (3) 76002012A ACTIVE LCCC FK 20 1 TBD Call TI Level-NC-NC-NC 7600201EA
|
Original
|
PDF
|
17-Oct-2005
6002012A
7600201EA
7600201FA
6033012A
7603301EA
7603301FA
JM38510/07903BEA
JM38510/07903BFA
JM38510/07904BEA
|
823B
Abstract: DL201 motorola handbook 84 pin plcc ic base Reliability and quality handbook
Text: MOTOROLA SEMICONDUCTOR GENERAL INFORMATION Packaging & Case Information 84-Pin PLCC CASE 780A-01 ISSUE A FN SUFFIX 181-Pin PGA CASE 795A–02 ISSUE A HI SUFFIX 128-Pin QFP CASE 862A-02 ISSUE B DD SUFFIX 208-Pin QFP CASE 872A-01 ISSUE TBD DK SUFFIX 160-Pin QFP
|
Original
|
PDF
|
84-Pin
80A-01
181-Pin
128-Pin
62A-02
208-Pin
72A-01
160-Pin
64A-03
224-Pin
823B
DL201
motorola handbook
84 pin plcc ic base
Reliability and quality handbook
|
transistor cross reference
Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: DA01SLV20 Silicon Carbide Power Schottky Diode Silicon Carbide Power S chottky Diode V RRM= 2000 V lF = 1 A Qc = tbd nC Features • 2000 V Schottky Rectifier SOT-89 Package • 175 °C Maximum Operating Temperature • Zero Reverse Recovery Current • Positive temperature coefficient of Vf
|
OCR Scan
|
PDF
|
DA01SLV20
OT-89
|
