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    TANAKA MATERIAL SAFETY Search Results

    TANAKA MATERIAL SAFETY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DE6B3KJ151KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ471KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6E3KJ152MN4A Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ101KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ331KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    TANAKA MATERIAL SAFETY Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MURATA NFM

    Abstract: AEI cable audio amplifiers small signal audio FET murata chip suppression filter AUDIO AMPLIFIER tanaka material safety common mode power line dc filter for emi suppression DLW5BTN501SQ2 Transistor audio power amplifier application
    Text: Murata’s Components Resolve Noises of Digital Audio Amplifier ICs N owadays, digital audio amplifier ICs are being used as audio amplifiers for digital audio-video A/V devices such as mobile phones, portable audio players, and flat-panel LCD TVs primarily


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    tanaka gold wire 1.0 mil

    Abstract: tanaka wire DM6030HK tanaka epoxy CMM-5-BD-000X TS3332LD Mimix Broadband tanaka au wire tanaka material safety tanaka bonding wire
    Text: 2.0-6.0 GHz GaAs MMIC Amplifier CMM-5-BD January 2007 - Rev 15-Jan-07 Features Chip Diagram High Gain: 16.5 dB 18 dBm P1dB Small Size: 39x40 mils Directly Cascadable Self-Biased Single Power Supply General Description Mimix Broadband's CMM-5 is a 2 to 6 GHz GaAs MMIC


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    15-Jan-07 39x40 CMM-5-BD-000X tanaka gold wire 1.0 mil tanaka wire DM6030HK tanaka epoxy CMM-5-BD-000X TS3332LD Mimix Broadband tanaka au wire tanaka material safety tanaka bonding wire PDF

    tanaka bonding wire

    Abstract: No abstract text available
    Text: 2.0-6.0 GHz GaAs MMIC Amplifier CMM-5-BD January 2007 - Rev 15-Jan-07 Features Chip Diagram High Gain: 16.5 dB 18 dBm P1dB Small Size: 39x40 mils Directly Cascadable Self-Biased Single Power Supply General Description Mimix Broadband's CMM-5 is a 2 to 6 GHz GaAs MMIC


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    15-Jan-07 39x40 CMM-5-BD-000X tanaka bonding wire PDF

    Untitled

    Abstract: No abstract text available
    Text: 34.5-38.0 GHz GaAs MMIC Power Amplifier P1056-BD Mar 2009 - Rev 04-Mar-09 Features Chip Device Layout High Efficiency Power Amplifier >35% PAE 13 dB Small Signal Gain +25.0 dBm P1dB Compression Point +26.0 dBm Saturated Output Power 100% On-Wafer DC, RF and Output Power Testing


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    P1056-BD 04-Mar-09 MIL-STD-883 XP1056-BD-EV1 XP1056-BD PDF

    corrugated carton

    Abstract: NA19020 FLC-13 FLCV-13 7 pin Inverter PWB ccfl Fujitsu inverter flcv-08 tanaka material safety data sheet inverter 4v to 12v SM02 lcd inverter ccfl transformer
    Text: To : Specifications of INVERTER for FUJITSU LCD module FLCV-13 Approval Date: By : This Product is designed, developed and manufactured as contemplated for general use, including without limitation, general office use, personal use, household use, and ordinary industrial use, but is not designed,


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    FLC-13 FLCV-13] P6015A FLCV-13 LCD-00105 corrugated carton NA19020 FLC-13 FLCV-13 7 pin Inverter PWB ccfl Fujitsu inverter flcv-08 tanaka material safety data sheet inverter 4v to 12v SM02 lcd inverter ccfl transformer PDF

    Untitled

    Abstract: No abstract text available
    Text: 7.0-14.0 GHz GaAs MMIC Low Noise Amplifier L1018-BD May 2010 - Rev 11-May-10 Features Self Bias Architecture Small Size 20.0 dB Small Signal Gain 1.7 dB Noise Figure +10.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883


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    11-May-10 L1018-BD MIL-STD-883 XL1018 PDF

    Untitled

    Abstract: No abstract text available
    Text: 0.05-50.0 GHz GaAs MMIC Distributed Amplifier D1002-BD January 2010 - Rev 18-Jan-10 Features Chip Device Layout Wide Band Driver Amplifier 9.0 dB Small Signal Gain 5.0 dB Noise Figure 15.0 dB Gain Control +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing


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    D1002-BD 18-Jan-10 MIL-STD-883 rep1002-BD-000V XD1002-BD-EV1 XD1002-BD PDF

    L1000-BD

    Abstract: XL1000-BD-EV1 XL1000-BD
    Text: 20.0-40.0 GHz GaAs MMIC Low Noise Amplifier L1000-BD January 2010 - Rev 18-Jan-10 Features Self Bias Architecture Small Size 3.0 or 5.0 V Operation 20.0 dB Small Signal Gain 2.0 dB Noise Figure +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing


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    L1000-BD 18-Jan-10 MIL-STD-883 aL1000-BD-EV1 XL1000 L1000-BD XL1000-BD-EV1 XL1000-BD PDF

    D1002-BD

    Abstract: DM6030HK TS3332LD XD1002-BD XD1002-BD-000V XD1002-BD-EV1 152.01
    Text: 0.05-50.0 GHz GaAs MMIC Distributed Amplifier D1002-BD January 2010 - Rev 18-Jan-10 Features Wide Band Driver Amplifier 9.0 dB Small Signal Gain 5.0 dB Noise Figure 15.0 dB Gain Control +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing


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    D1002-BD 18-Jan-10 MIL-STD-883 repeatabi02-BD-000V XD1002-BD-EV1 XD1002-BD D1002-BD DM6030HK TS3332LD XD1002-BD-000V XD1002-BD-EV1 152.01 PDF

    BD 139 140

    Abstract: P1026 30SPA0553 DM6030HK P1026-BD TS3332LD XP1026-BD XP1026-BD-000V XP1026-BD-EV1 ID-2250
    Text: 27.0-32.0 GHz GaAs MMIC Power Amplifier P1026-BD January 2009 - Rev 19-Jan-09 Features Ka-Band 2W Power Amplifier 21.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing


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    P1026-BD 19-Jan-09 MIL-STD-883 XP1026-BD-000V XP1026-BD-EV1 XP1026-BD BD 139 140 P1026 30SPA0553 DM6030HK P1026-BD TS3332LD XP1026-BD-000V XP1026-BD-EV1 ID-2250 PDF

    XL1002-BD

    Abstract: 28LN3BA0050 L1002-BD V550
    Text: 20.0-36.0 GHz GaAs MMIC Low Noise Amplifier L1002-BD January 2010 - Rev 09-Jan-10 Features Balanced Design Excellent Input/Output Match Self-biased Architecture 23.0 dB Small Signal Gain 2.6 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883


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    L1002-BD 09-Jan-10 MIL-STD-883 provideL1002-BD-EV1 XL1002 XL1002-BD 28LN3BA0050 L1002-BD V550 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2.0-18.0 GHz GaAs MMIC Buffer Amplifier September 2009 - Rev 21-Sep-09 CMM4000-BD Features Chip Device Layout Self Bias Architecture On-Chip Drain Bias Coil/DC Blocking 8.5 dB Small Signal Gain 4.5 dB Noise Figure +19.0 dBm P1dB Compression Point 100% Visual Inspection to MIL-STD-883


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    21-Sep-09 CMM4000-BD MIL-STD-883 viaD-000V PB-CMM4000-BD-0000 CMM4000-BD PDF

    XD1001-BD-EV1

    Abstract: DM6030HK TS3332LD XD1001-BD XD1001-BD-000V XD1001
    Text: 18.0-50.0 GHz GaAs MMIC Distributed Amplifier D1001-BD January 2010 - Rev 11-Jan-10 Features Ultra Wide Band Driver Amplifier Fiber Optic Modulator Driver 17.0 dB Small Signal Gain 5.0 dB Noise Figure 30 dB Gain Control +15.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing


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    D1001-BD 11-Jan-10 MIL-STD-883 l01-BD-000V XD1001-BD-EV1 XD1001-BD XD1001-BD-EV1 DM6030HK TS3332LD XD1001-BD-000V XD1001 PDF

    CMM3020-BD-000V

    Abstract: CMM3020-BD DM6030HK M326 TS3332LD
    Text: 30.0 kHz-20.0 GHz GaAs MMIC Distributed Amplifier CMM3020-BD May 2010 - Rev 08-May-10 Features Chip Device Layout Ultra Wide Band Driver Amplifier Low Gain Ripple Positive Gain Slope 9.0 dB Small Signal Gain +23.0 dBm P1dB Compression Point +35.0 dBm Third Order Intercept


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    Hz-20 CMM3020-BD 08-May-10 MIL-STD-883 -BD-0000 CMM3020-BD CMM3020-BD-000V DM6030HK M326 TS3332LD PDF

    CMM2030-BD

    Abstract: CMM2030 DM6030HK TS3332LD DEGC120
    Text: 30.0 kHz-30.0 GHz GaAs MMIC Distributed Amplifier CMM2030-BD May 2010 - Rev 07-May-10 Features Chip Device Layout Ultra Wide Band Driver Amplifier Low Gain Ripple Positive Gain Slope 12.0 dB Small Signal Gain +16.0 dBm P1dB Compression Point +27.0 dBm Third Order Intercept


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    Hz-30 CMM2030-BD 07-May-10 MIL-STD-883 a-BD-0000 CMM2030-BD CMM2030 DM6030HK TS3332LD DEGC120 PDF

    CMM4000

    Abstract: CMM4000-BD CMM4000-BD-000V DM6030HK M393 TS3332LD tanaka material safety
    Text: 2.0-18.0 GHz GaAs MMIC Buffer Amplifier CMM4000-BD September 2009 - Rev 21-Sep-09 Features Self Bias Architecture On-Chip Drain Bias Coil/DC Blocking 8.5 dB Small Signal Gain 4.5 dB Noise Figure +19.0 dBm P1dB Compression Point 100% Visual Inspection to MIL-STD-883


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    CMM4000-BD 21-Sep-09 MIL-STD-883 holesD-000V PB-CMM4000-BD-0000 CMM4000-BD CMM4000 CMM4000-BD-000V DM6030HK M393 TS3332LD tanaka material safety PDF

    nl8048bc19-02

    Abstract: NL8048BC19 THC63LVDM83R lcd screen LVDS connector 40 pins application of pick place robot nl8048 LVDS 30 pin hirose LVDS lvds 20 pin lcd panel NEC lcd led backlight JAE LVDS 30 PIN
    Text: TFT COLOR LCD MODULE NL8048BC19-02 18cm 7.0 Type WVGA LVDS interface (1port) PRELIMINARY DATA SHEET DOD-PP-0399 (2nd edition) This PRELIMINARY DATA SHEET is updated document from DOD-PP-0359(1). All information is subject to change without notice. Please confirm the sales representative before


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    NL8048BC19-02 DOD-PP-0399 DOD-PP-0359 nl8048bc19-02 NL8048BC19 THC63LVDM83R lcd screen LVDS connector 40 pins application of pick place robot nl8048 LVDS 30 pin hirose LVDS lvds 20 pin lcd panel NEC lcd led backlight JAE LVDS 30 PIN PDF

    Untitled

    Abstract: No abstract text available
    Text: 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier CMM1100-BD February 2010 - Rev-05-Feb-10 Features Chip Device Layout Self Bias Architecture 17.0 dB Small Signal Gain 3.5 dB Noise Figure +16.0 dBm P1dB Compression Point 100% Commercial-Level Visual Inspection Using


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    CMM1100-BD Rev-05-Feb-10 Mil-Std-883 CMM1100-BD-000W PB-CMM1100-BD-0000 CMM1100-BD PDF

    28LN2BA0047

    Abstract: XL1001-BD L1001-BD tanaka material safety
    Text: 17.0-35.0 GHz GaAs MMIC Low Noise Amplifier L1001-BD January 2010 - Rev 10-Jan-10 Features Balanced Design Excellent Input/Output Match Self-biased Architecture 14.0 dB Small Signal Gain 2.5 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883


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    L1001-BD 10-Jan-10 MIL-STD-883 aL1001-BD-EV1 XL1001 28LN2BA0047 XL1001-BD L1001-BD tanaka material safety PDF

    TEXAS 7697

    Abstract: CMM1100 CMM1100-BD DM6030HK PB-CMM1100-BD-0000 TS3332LD
    Text: 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier CMM1100-BD February 2010 - Rev-05-Feb-10 Features Self Bias Architecture 17.0 dB Small Signal Gain 3.5 dB Noise Figure +16.0 dBm P1dB Compression Point 100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010


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    CMM1100-BD Rev-05-Feb-10 Mil-Std-883 CMM1100-BD-000W PB-CMM1100-BD-0000 CMM1100-BD TEXAS 7697 CMM1100 DM6030HK PB-CMM1100-BD-0000 TS3332LD PDF

    XD9001

    Abstract: D1008-BD XD1008-BD-000V mmic distributed amplifier XD1008 DM6030HK TS3332LD
    Text: 30 kHz - 40 GHz GaAs MMIC Distributed Amplifier March 2009 - Rev 19-Mar-09 D1008-BD Features Chip Device Layout 15 dB Gain 22.5 dBm P1dB at 22 GHz 4.5 dB Noise Figure at 26 GHz Unconditional Stability over Temperature Range 100% On-Wafer RF, DC and Output Power Testing


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    19-Mar-09 D1008-BD MIL-STD-883 XD1008 XD9001. XD9001 D1008-BD XD1008-BD-000V mmic distributed amplifier DM6030HK TS3332LD PDF

    Untitled

    Abstract: No abstract text available
    Text: 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier CMM1100-BD September 2009 - Rev 22-Sep-09 Features Self Bias Architecture 17.0 dB Small Signal Gain 3.5 dB Noise Figure +16.0 dBm P1dB Compression Point 100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010


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    CMM1100-BD 22-Sep-09 Mil-Std-883 metalD-000V PB-CMM1100-BD-0000 CMM1100-BD PDF

    NA19020-C953

    Abstract: NA19020 C953 FLC48SXC8V-02 FI-X30M FLCV-13 SS26E3935N8365C3273111 FLCL-20 KOWA CORP DS90CF386
    Text: To : Specification of FUJITSU TFT-LCD module FLC48SXC8V-02 Approval Date: By : This Product is designed, developed and manufactured as contemplated for general use, including without limitation, general office use, personal use, household use, and ordinary industrial use, but is not designed,


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    FLC48SXC8V-02 NA19020-C953 NA19020 C953 FLC48SXC8V-02 FI-X30M FLCV-13 SS26E3935N8365C3273111 FLCL-20 KOWA CORP DS90CF386 PDF

    ROHM resistor

    Abstract: MCR03 TSZ22111-03 TSZ22111-04 09001F
    Text: TSZ22111-03 noH m TYPE PRODUCTS FIXED THICK FILM CHIP RESISTORS PAGE M C R 0 3 Series 2/13 < Specifications Precautions and Prohibitions > Safety Precautions 1) The products are designed and produced for application in ordinary electronic equipment (AV equipment,


    OCR Scan
    MCR03 MAY/14/2003 MCR03N-IA TSZ22111-03 ET-7200A 000pcs TSZ22111-04 ROHM resistor 09001F PDF