XD1008-BD-000V
Abstract: No abstract text available
Text: XD1008-BD Distributed Amplifier 30 kHz - 40 GHz Rev. V1 Features Chip Device Layout • 15 dB Gain 22.5 dBm P1dB at 22 GHz 4.5 dB Noise Figure at 26 GHz Unconditional Stability over Temperature Range 100% On-Wafer RF, DC and Output Power Testing
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XD1008-BD
MIL-STD-883
XD1008-BD
XD1008-BD-000V
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XD1008-BD-000V
Abstract: No abstract text available
Text: XD1008-BD Distributed Amplifier 30 kHz-40 GHz Rev. V1 Features Chip Device Layout • 15 dB Gain 22.5 dBm P1dB at 22 GHz 4.5 dB Noise Figure at 26 GHz Unconditional Stability over Temperature Range 100% On-Wafer RF, DC and Output Power Testing
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XD1008-BD
Hz-40
MIL-STD-883
XD1008-BD-000V
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Untitled
Abstract: No abstract text available
Text: XD1008-BD Distributed Amplifier 30 kHz-40 GHz Rev. V1 Features Chip Device Layout • 15 dB Gain 22.5 dBm P1dB at 22 GHz 4.5 dB Noise Figure at 26 GHz Unconditional Stability over Temperature Range 100% On-Wafer RF, DC and Output Power Testing
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XD1008-BD
Hz-40
MIL-STD-883
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XD1008
Abstract: XD1008-QH mmic distributed amplifier XD1008-QH-0G00
Text: 30.0 kHz-32.0 GHz GaAs MMIC Distributed QFN Packaged Amplifier D1008-QH December 2009 - Rev 08-Dec-09 Features 17 dB Small Signal Gain 24 dBm Saturated Power 3.0 dB Noise Figure Unconditional Stability over Temperature Range 4x4mm Fully Molded Standard QFN Package
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Hz-32
D1008-QH
08-Dec-09
XD1008-QH
XD1008
mmic distributed amplifier
XD1008-QH-0G00
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XD9001
Abstract: D1008-BD XD1008-BD-000V mmic distributed amplifier XD1008 DM6030HK TS3332LD
Text: 30 kHz - 40 GHz GaAs MMIC Distributed Amplifier March 2009 - Rev 19-Mar-09 D1008-BD Features Chip Device Layout 15 dB Gain 22.5 dBm P1dB at 22 GHz 4.5 dB Noise Figure at 26 GHz Unconditional Stability over Temperature Range 100% On-Wafer RF, DC and Output Power Testing
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19-Mar-09
D1008-BD
MIL-STD-883
XD1008
XD9001.
XD9001
D1008-BD
XD1008-BD-000V
mmic distributed amplifier
DM6030HK
TS3332LD
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PDF
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XD9001
Abstract: No abstract text available
Text: 30 kHz - 40 GHz GaAs MMIC Distributed Amplifier October 2008 - Rev 22-Oct-08 D1008-BD Features Chip Device Layout 15 dB Gain 22.5 dBm P1dB at 22 GHz 4.5 dB Noise Figure at 26 GHz Unconditional Stability over Temperature Range 100% On-Wafer RF, DC and Output Power Testing
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22-Oct-08
D1008-BD
MIL-STD-883
XD1008-BD-000V
XD1008-BD-EV1
XD1008
XD9001
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PDF
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XD9001
Abstract: No abstract text available
Text: 30 kHz - 40 GHz GaAs MMIC Distributed Amplifier October 2008 - Rev 30-Oct-08 D1008-BD Features Chip Device Layout 15 dB Gain 22.5 dBm P1dB at 22 GHz 4.5 dB Noise Figure at 26 GHz Unconditional Stability over Temperature Range 100% On-Wafer RF, DC and Output Power Testing
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30-Oct-08
D1008-BD
MIL-STD-883
XD1008-BD-000V
XD1008-BD-EV1
XD1008
XD9001
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PDF
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xg1015-SE
Abstract: XB1013-qt CMM6001-BD CFP0103-SP CMM6004-BD XZ1003-QT XU1016 QH XP1073-BD XD1008-QH XP1035-BD
Text: Sales Contact Information NORTH AMERICA COLORADO, UTAH USA ALABAMA, FLORIDA, GEORGIA, MISSISSIPPI, NORTH CAROLINA, SOUTH CAROLINA,TENNESSEE, Electronic Marketing Associates EMA 919-847-8800 rdenny@emarep.com Alabama Office 256-880-8050 djones@emarep.com
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XD9001
Abstract: D1008-BD XD1008-BD XD-100 mmic distributed amplifier mmic s2 transistor BD 140 XD1008 DM6030HK TS3332LD
Text: 30 kHz - 40 GHz GaAs MMIC Distributed Amplifier February 2009 - Rev 05-Feb-09 D1008-BD Features Chip Device Layout 15 dB Gain 22.5 dBm P1dB at 22 GHz 4.5 dB Noise Figure at 26 GHz Unconditional Stability over Temperature Range 100% On-Wafer RF, DC and Output Power Testing
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Original
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05-Feb-09
D1008-BD
MIL-STD-883
XD1008
XD9001.
XD9001
D1008-BD
XD1008-BD
XD-100
mmic distributed amplifier
mmic s2
transistor BD 140
DM6030HK
TS3332LD
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PDF
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