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    28LN2BA0047 Search Results

    28LN2BA0047 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    28LN2BA0047 Mimix Broadband 17.0-35.0 GHz GaAs MMIC Low Noise Amplifier Original PDF

    28LN2BA0047 Datasheets Context Search

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    pHEMT transistor MTBF

    Abstract: BA0047
    Text: 17.0-35.0 GHz GaAs MMIC Low Noise Amplifier 28LN2BA0047 May 2002 - Rev 01-May-02 Features Chip Device Layout ar General Description y Receiver Front End Excellent Input/Output Match Self-biased Architecture 15.0 dB Small Signal Gain 2.5 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing


    Original
    PDF 28LN2BA0047 01-May-02 MIL-STD-883 22Mar2002 22Mar20 BA0047 22Mar200 28LN2BA004 pHEMT transistor MTBF BA0047

    Untitled

    Abstract: No abstract text available
    Text: 17.0-35.0 GHz GaAs MMIC Low Noise Amplifier L1001-BD April 2008 - Rev 02-Apr-08 Features Balanced Design Excellent Input/Output Match Self-biased Architecture 14.0 dB Small Signal Gain 2.5 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883


    Original
    PDF 02-Apr-08 L1001-BD MIL-STD-883 XL1001

    28LN2BA0047

    Abstract: XL1001-BD L1001-BD tanaka material safety
    Text: 17.0-35.0 GHz GaAs MMIC Low Noise Amplifier L1001-BD January 2010 - Rev 10-Jan-10 Features Balanced Design Excellent Input/Output Match Self-biased Architecture 14.0 dB Small Signal Gain 2.5 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883


    Original
    PDF L1001-BD 10-Jan-10 MIL-STD-883 aL1001-BD-EV1 XL1001 28LN2BA0047 XL1001-BD L1001-BD tanaka material safety

    87478

    Abstract: 1509-33 l1001 aluminium 6351 28LN2BA0047 84-1LMI XL1001
    Text: 17.0-35.0 GHz GaAs MMIC Low Noise Amplifier L1001 March 2005 - Rev 01-Mar-05 Features Chip Device Layout Balanced Design Excellent Input/Output Match Self-biased Architecture 14.0 dB Small Signal Gain 2.5 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing


    Original
    PDF L1001 01-Mar-05 MIL-STD-883 87478 1509-33 l1001 aluminium 6351 28LN2BA0047 84-1LMI XL1001

    Untitled

    Abstract: No abstract text available
    Text: 17.0-35.0 GHz GaAs MMIC Low Noise Amplifier L1001 March 2005 - Rev 01-Mar-05 Features Chip Device Layout Balanced Design Excellent Input/Output Match Self-biased Architecture 14.0 dB Small Signal Gain 2.5 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing


    Original
    PDF L1001 01-Mar-05 MIL-STD-883

    1509-33

    Abstract: 28LN2BA0047 372625 150933 150.2199 655978
    Text: 17.0-35.0 GHz GaAs MMIC Low Noise Amplifier L1001-BD April 2008 - Rev 02-Apr-08 Features Balanced Design Excellent Input/Output Match Self-biased Architecture 14.0 dB Small Signal Gain 2.5 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883


    Original
    PDF 02-Apr-08 L1001-BD MIL-STD-883 XL1001 1509-33 28LN2BA0047 372625 150933 150.2199 655978

    bd 5445

    Abstract: 14364 28LN2BA0047 DM6030HK TS3332LD XL1001-BD XL1001-BD-000V XL1001-BD-000W 1509-33
    Text: 17.0-35.0 GHz GaAs MMIC Low Noise Amplifier L1001-BD July 2007 - Rev 13-Jul-07 Features Balanced Design Excellent Input/Output Match Self-biased Architecture 14.0 dB Small Signal Gain 2.5 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883


    Original
    PDF L1001-BD 13-Jul-07 MIL-STD-883 XL1001-BD-000V XL1001-BD-000W XL1001-BD-EV1 XL1001 bd 5445 14364 28LN2BA0047 DM6030HK TS3332LD XL1001-BD XL1001-BD-000V XL1001-BD-000W 1509-33