A64S0616
Abstract: A64S0616G-70 A64S0616G-85
Text: A64S0616 1M X 16 Bit Low Voltage Super RAMTM Preliminary Document Title 1M X 16 Bit Low Voltage Super RAMTM Revision History Rev. No. History Issue Date Remark Preliminary 0.0 Initial issue November 30, 2001 0.1 Add tASC, tAHC, tCEH, tWEH July 31, 2002 0.2
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A64S0616
MO192
A64S0616
A64S0616G-70
A64S0616G-85
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A64S9316
Abstract: A64S9316G-70
Text: A64S9316 512K X 16 Bit Low Voltage Super RAMTM Preliminary Document Title 512K X 16 Bit Low Voltage Super RAMTM Revision History Rev. No. History Issue Date Remark Preliminary 0.0 Initial issue May 16, 2002 0.1 Add tASC, tAHC, tCEH, tWEH July 31, 2002 0.2
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A64S9316
MO192
A64S9316
A64S9316G-70
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Untitled
Abstract: No abstract text available
Text: A64S0616 1M X 16 Bit Low Voltage Super RAMTM Preliminary Document Title 1M X 16 Bit Low Voltage Super RAMTM Revision History History Issue Date Remark 0.0 Initial issue November 30, 2001 Preliminary 0.1 Add tASC, tAHC, tCEH, tWEH July 31, 2002 0.2 Change VCCmax from 3.1V to 3.3V
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A64S0616
MO192
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TAHC
Abstract: A64S0616 A64S0616G-70 A64S0616G-85
Text: A64S0616 1M X 16 Bit Low Voltage Super RAMTM Preliminary Document Title 1M X 16 Bit Low Voltage Super RAMTM Revision History Rev. No. History Issue Date Remark Preliminary 0.0 Initial issue November 30, 2001 0.1 Add tASC, tAHC, tCEH, tWEH July 31, 2002 PRELIMINARY
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A64S0616
A64S0616
TAHC
A64S0616G-70
A64S0616G-85
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PDF
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A64S9316
Abstract: A64S9316G-70
Text: A64S9316 512K X 16 Bit Low Voltage Super RAMTM Preliminary Document Title 512K X 16 Bit Low Voltage Super RAMTM Revision History Rev. No. History Issue Date Remark Preliminary 0.0 Initial issue May 16, 2002 0.1 Add tASC, tAHC, tCEH, tWEH July 31, 2002 PRELIMINARY
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A64S9316
A64S9316
A64S9316G-70
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A64S0616
Abstract: A64S0616G-55 A64S0616G-70
Text: A64S0616 1M X 16 Bit Low Voltage Super RAMTM Preliminary Document Title 1M X 16 Bit Low Voltage Super RAMTM Revision History Rev. No. History Issue Date Remark Preliminary 0.0 Initial issue November 30, 2001 0.1 Add tASC, tAHC, tCEH, tWEH July 31, 2002 0.2
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A64S0616
MO192
A64S0616
A64S0616G-55
A64S0616G-70
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PDF
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0.3mm pitch BGA
Abstract: A64S0616 A64S0616G-70 A64S0616G-85
Text: A64S0616 1M X 16 Bit Low Voltage Super RAMTM Preliminary Document Title 1M X 16 Bit Low Voltage Super RAMTM Revision History Rev. No. History Issue Date Remark Preliminary 0.0 Initial issue November 30, 2001 0.1 Add tASC, tAHC, tCEH, tWEH July 31, 2002 0.2
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Original
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A64S0616
MO192
0.3mm pitch BGA
A64S0616
A64S0616G-70
A64S0616G-85
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PDF
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A64S9316
Abstract: A64S9316G-70
Text: A64S9316 512K X 16 Bit Low Voltage Super RAMTM Preliminary Document Title 512K X 16 Bit Low Voltage Super RAMTM Revision History Rev. No. History Issue Date Remark Preliminary 0.0 Initial issue May 16, 2002 0.1 Add tASC, tAHC, tCEH, tWEH July 31, 2002 0.2
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A64S9316
MO192
A64S9316
A64S9316G-70
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W27C020-70
Abstract: W27C020 W27C20-70 IN914 W27C020-12 W27C020-90 W27C020P-12 W27C020P-70 W27C020P-90
Text: Preliminary W27C020 256K x 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27C020 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 262144 × 8 bits that operates on a single 5 volt power supply. The W27C020
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W27C020
W27C020
32-pin
W27C020-70
W27C20-70
IN914
W27C020-12
W27C020-90
W27C020P-12
W27C020P-70
W27C020P-90
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EM033C08
Abstract: EM033C08N EM02R2
Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM033C08 EM033C08 Low Power 32Kx8 SRAM Overview Features The EM033C08 is an integrated memory device containing a low power 256 Kbit Static Random
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EM033C08
32Kx8
EM033C08
EM02R2XX
EM033C08N
EM033C08N
EM02R2
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F0110
Abstract: 004C2000
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE5.0E MEMORY Mobile FCRAM CMOS 16M Bit 1M word x 16 bit Mobile Phone Application Specific Memory MB82D01161-85/-85L/-90/90L CMOS 1,048,576-WORD x 16 BIT Fast Cycle Random Access Memory with Low Power SRAM Interface •
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MB82D01161-85/-85L/-90/90L
576-WORD
MB82D01161
16-bit
16bit
90nany
F0110
F0110
004C2000
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PDF
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interface 8254 with 8086
Abstract: C1996 DS1287 IEEE-1284 MC146818 NS486 NS486SXF 25-megabyte interfacing lcd with 8086 8086 interfacing with 8254 peripheral
Text: February 1997 NS486 TM SXF Optimized 32-Bit 486-Class Controller with On-Chip Peripherals for Embedded Systems General Description The NS486SXF is a highly integrated embedded system controller incorporating an Intel486TM -class 32-bit processor all of the necessary System Service Elements and a
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NS486
32-Bit
486-Class
NS486SXF
Intel486TM
Intel486
interface 8254 with 8086
C1996
DS1287
IEEE-1284
MC146818
25-megabyte
interfacing lcd with 8086
8086 interfacing with 8254 peripheral
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PDF
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DIP28
Abstract: LC33832M LC33832P LC33832S
Text: Ordering number : EN4430C CMOS LSI LC33832P, S, M, PL, SL, ML-70/80/10 256 K 32768 words x 8 bits Pseudo-SRAM Overview Package Dimensions The LC33832 series is composed of pseudo static RAM that operates on a single 5 V power supply and is organized as 32768 words × 8 bits. By using memory
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EN4430C
LC33832P,
ML-70/80/10
LC33832
DIP28
LC33832M
LC33832P
LC33832S
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MR27V6466F
Abstract: MR27V6466FTA
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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PEDR27V6466F-01-08
MR27V6466F
304-Word
16-Bit
152-Word
32-Bit
MR27V6466F
MR27V6466FTA
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TC518128
Abstract: tc518128cfl80 TC518128CFL-80 cfl circuit diagrams TC518128CFL-70
Text: INTEGRATED TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TC 5 1 8 1 2 8 C P L /C S P L /C F L / CFWL / CFTL - 7 0 , TC 5 1 8 1 2 8 CPL / CSPL / CFL / CFWL / CFTL - 8 0 TC 5 1 8 1 2 8 CPL / C S PL/ CFL / CFWL / CFTL - 1 0 , TC 5 1 8 1 2 8 CPL/ CSPL / CFL/ CFW L/ CFTL - 7 0 L
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072-WORD
18128C
578-bit
TC518128CFWL-70,
TC518128CFWL-80,
TC518128CFWL-10,
TC518128CPL--
TC518128
tc518128cfl80
TC518128CFL-80
cfl circuit diagrams
TC518128CFL-70
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518128
Abstract: 518128apl TC518128
Text: TOSHIBA TC518128APL/AFL/AFWL-80LV/10LV/12LV TC518128AFTLS0LV/10LV/12LV SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description T h e T C 5 1 8 1 2 8 A -L V is a 1M bit high speed C M O S p se udo static R AM organized as 131,07 2 w o rd s b y 8 bits. The T C 5 1 8 1 2 8 A -L V
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OCR Scan
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TC518128APL/AFL/AFWL-80LV/10LV/12LV
TC518128AFTLS0LV/10LV/12LV
518128APLyAFL/AFW
L/AFTL-80LV/1
OLV/12LV
518128APL/AFL/AFW
L/AFTL-80LV/1O
LV/12LV
2SA1015
518128
518128apl
TC518128
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data sw 3205
Abstract: No abstract text available
Text: Ordering number : EN JK4711 CMOS LSI LC338128P, M, PL, ML-7Q/8o7fÖ 1 MEG 131072 words x 8 bits Pseudo-SRAM Preliminary Overview Package Dimensions The LC338128 series is composed of pseudo static RAM that operate on a single 5 V power supply and is organized
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OCR Scan
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JK4711
LC338128P,
LC338128
32-pin
ML-70/8Q/10
data sw 3205
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TC518128B
Abstract: TRANSISTOR BFW 11 pin diagram TC518128 TC518128bfl pin diagram of TRANSISTOR BFW 11 TC5181
Text: TOSHIBA T C 5 1 8 1 2 8 B P L /B S P L /B F L /B F W 1 V B F IL -7 0 /8 0 /1 0 T C 5 1 8 1 2 8 B P iy B S P L /B F V B F W L /B F H r 7 0 iy 8 0 L /1 0 L SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128B utilizes
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TC518128B
TC5181
TC518128BPL
SPL/BFL/BFWL/BFTL-70/80/10
TC518128BPL/BSPL/BFL/BFWL/BFTL-70L/80L/1
TRANSISTOR BFW 11 pin diagram
TC518128
TC518128bfl
pin diagram of TRANSISTOR BFW 11
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4430B
Abstract: 256x128x8
Text: |Ordering number : EN4430B] CMOS LSI LC33832P, S, M, PL, SL, ML-70/80/10 No. 4430B 256 K 32768 words x 8 bits Pseudo-SRAM Overview Package Dimensions The LC33832 series is composed of pseudo static RAM that operates on a single S V power supply and is organized as 32768 words x 8 bits. By using memory
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OCR Scan
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EN4430B]
4430B
LC33832P,
ML-70/80/10
LC33832
LC33C33832P,
4430B
256x128x8
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PDF
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SVI 3003
Abstract: 306CE GL 3401 HP 1003 WA s4r diode CIK 81 GE 8111 GML 3401 CHARACTERISTICS marking _TH Z6 ITT
Text: M IL -M -3 8 5 1 0 /3 0 6 C 16 D e c e m b e r 1981 S U P tR b tU iH U M IL -M -3 8 5 1 0 /3 0 6 B Î U S A F 9 A u g u s t 1 9 78 M IL IT A R Y S P E C IF IC A T IO N H I CROC I R C U I T S , D I G I T A L , LOW POUER S H I F T R E G I S T E R S , M O N O LITH IC
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OCR Scan
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MIL-H-38510/306C
MIL-M-38510/306BÃ
M1L-M-38510.
typ4LS295B
54LS395A
154LS165
54LS166
L-N-38510/306C
SVI 3003
306CE
GL 3401
HP 1003 WA
s4r diode
CIK 81
GE 8111
GML 3401 CHARACTERISTICS
marking _TH
Z6 ITT
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MOS MEMORY PRODUCTS TC521OOOP/J 1MBit 256K X 4 Field Memory PRELIMINARY DESCRIPTION The TC521000P/J is a CMOS 1Mbit Field Memory organized as 256K words by 4 bits, and features separate inputs/outputs, each equipped with an 8 bit serial shift register (32K
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OCR Scan
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TC521OOOP/J
TC521000P/J
33MHz
TC521000P/J.
TC521060P/J
DIP40-P-600
U-25-QQ5
63SMIN
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PDF
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Untitled
Abstract: No abstract text available
Text: TC518129CPL/CFWL/CFIL-70/80/10 TC518129CPL/CFWL/CFIL-70L/80L/10L SILICON GATE CMOS P R E L IM IN A R Y 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM D e s c rip tio n The T C 5 1 8 1 2 9 C is a 1 M bit high speed C M O S pse udo static RAM organized as 131,072 w o rd s by 8 bits. T h e T C 5 1 8 1 2 9 C utilizes
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TC518129CPL/CFWL/CFIL-70/80/10
TC518129CPL/CFWL/CFIL-70L/80L/10L
Q02bbl3
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PDF
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Untitled
Abstract: No abstract text available
Text: AT29LV256 Features • • • • • • • • • • • • Single 3.3 V + 10% Supply Three-Volt-Only Read and Write Operation Software Protected Programming Low Power Dissipation 15 mA Active Current 20 fxA CMOS Standby Current Fast Read Access Time - 200 ns
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OCR Scan
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AT29LV256
AT29LV256-25DC
AT29LV256-25JC
AT29LV256-25LC
AT29LV256-25PC
AT29LV256-25TC
AT29LV256-25DI
AT29LV256-25JI
AT29LV256-25LI
AT29LV256-25PI
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PDF
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TC518512
Abstract: No abstract text available
Text: INTEGRATED TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC518512 AF / AFT - 70V TC518512 AF / AFT - 80V TC518512 AF / AFT - 1 0V DATA SILICON GATE CMOS 524,288-WORD BY 8-BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC518512AF/AFT is a 4,194,304-bit CMOS pseudo static random access memory PSRAM organized as
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OCR Scan
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TC518512
288-WORD
TC518512AF/AFT
304-bit
TC518512AF-Vâ
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