LS013B7DH01
Abstract: d143 T transistor Zebra stripe s TSSCS lcd tv parts Zebra stripe sharp TFT LCD tv driver LCP-2110019B Industrial Devices L168 V144H
Text: No. LCP-2110019B Date 16th Aug 2010 Technical Literature For TFT-LCD Module Model No. LS013B7DH01 Notice The technical Literature is subject to change without any prior notice for the purpose of product improvement. Please contact Sharp or its representative before designing
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LCP-2110019B
LS013B7DH01
Celsius/95
-30degrees
200V200pF
LS013B7DH01
d143 T transistor
Zebra stripe s
TSSCS
lcd tv parts
Zebra stripe
sharp TFT LCD tv driver
Industrial Devices L168
V144H
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TRANSISTOR mcr 100-8
Abstract: No abstract text available
Text: MOTOROLA MC33389 SEMICONDUCTOR TECHNICAL DATA SBC System basis chip Advance Information Automotive System Basis Chip The MC33389 is a monolithic integrated circuit combining many functions frequently used by automotive ECUs. It incorporates a low speed fault
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MC33389
MC33389
100mA
200mA
125kBaud
MC33388
TRANSISTOR mcr 100-8
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ba1s
Abstract: No abstract text available
Text: IS43LR32400E Advanced Information 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43LR32400E is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The address lines are multiplexed with the Data
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IS43LR32400E
32Bits
IS43LR32400E
Figure38
90Ball
-25oC
4Mx32
IS43LR32400E-6BLE
ba1s
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mitsubishi split ac
Abstract: 013A1
Text: t U de nd v e er lo pm en Preliminary Specifications REV.A Mitsubishi microcomputers Specifications in this manual are tentative and subject to change. M16C / 6NT Group SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER Description Description The M16C/6NT group of single-chip microcomputers are built using the high-performance silicon gate
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16-BIT
M16C/6NT
M16C/60
100-pin
mitsubishi split ac
013A1
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IS43LR16640A
Abstract: IS43LR16640A-5BLI IS43LR16640A-6BLI IS46LR16640A-5BLA1 IS43LR16640A-6BL
Text: IS43/46LR16640A Advanced Information 16M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16640A is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 16,777,216 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted
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IS43/46LR16640A
16Bits
IS43/46LR16640A
16-bit
-40oC
64Mx16
IS43LR16640A-5BLI
IS43LR16640A-6BLI
60-ball
IS43LR16640A
IS46LR16640A-5BLA1
IS43LR16640A-6BL
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Untitled
Abstract: No abstract text available
Text: W25Q16CL 2.5V 16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI -1- Publication Release Date: May 23, 2014 - Revision G W25Q16CL Table of Contents 1. GENERAL DESCRIPTION . 5
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W25Q16CL
16M-BIT
208-mil,
150-MIL
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LCMXO2-1200HC-4TG100C
Abstract: LCMXO2-256HC-4TG100I LCMXO2-1200 tn1200 lcmxo2 LCMXO2-1200HC-4TG100 LCMXO2-2000 LCMXO2-7000 MachXO2-1200 LCMXO2-4000HC
Text: MachXO2 Family Handbook HB1010 Version 01.0, November 2010 MachXO2 Family Handbook Table of Contents November 2010 Section I. MachXO2 Family Data Sheet Introduction Features . 1-1
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HB1010
LCMXO2-1200HC-4TG100C
LCMXO2-256HC-4TG100I
LCMXO2-1200
tn1200
lcmxo2
LCMXO2-1200HC-4TG100
LCMXO2-2000
LCMXO2-7000
MachXO2-1200
LCMXO2-4000HC
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W25Q40BW
Abstract: 25Q40B 25Q40BW
Text: W25Q40BW 1.8V 4M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI -1- Publication Release Date: July 24, 2012 Revision D W25Q40BW Table of Contents 1. GENERAL DESCRIPTION . 5
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W25Q40BW
150-MIL
150-MIL,
W25Q40BW
25Q40B
25Q40BW
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46LR32640A
Abstract: Mobile DDR SDRAM
Text: IS43/46LR32640A 16M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32640A is 2,147,483,648 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 33,554,432 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted
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IS43/46LR32640A
32Bits
IS43/46LR32640A
32-bit
IS43LR32640A-6BLI
90-ball
-40oC
64Mx32
IS46LR32640A-5BLA1
46LR32640A
Mobile DDR SDRAM
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25Q32DWSIG
Abstract: No abstract text available
Text: W25Q32DW 1.8V 32M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI -1- Publication Release Date: September 18, 2012 Revision D W25Q32DW Table of Contents 1. GENERAL DESCRIPTION . 5
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W25Q32DW
32M-BIT
208-MIL
208-MIL,
25Q32DWSIG
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Untitled
Abstract: No abstract text available
Text: DUAL CHANNEL T1/E1/J1 LONG HAUL/ SHORT HAUL LINE INTERFACE UNIT IDT82V2082 FEATURES: • • • • • • • - Dual channel T1/E1/J1 long haul/short haul line interfaces Supports HPS Hitless Protection Switching for 1+1 protection without external relays
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IDT82V2082
772KHz
TBR12/13
82V2082
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5.1 home theatre circuit diagram
Abstract: 2.1 to 5.1 home theatre circuit diagram 5.1 home theatre basic diagram 5.1 home theatre diagram zigbee document 053474r06 version 1.0 5.1 home theatre assembling 4.1 home theater ic ZigBee Specification, Document 053474r06 home theater 5.1 circuit diagram bd 317 schema
Text: ZigBee Specification ZigBee Document 053474r06, Version 1.0 December 14th, 2004 Sponsored by: ZigBee Alliance Accepted by ZigBee Alliance Board of Directors. Abstract The ZigBee Specification describes the infrastructure and services available to applications operating on the ZigBee platform.
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053474r06,
0x02fe3321
5.1 home theatre circuit diagram
2.1 to 5.1 home theatre circuit diagram
5.1 home theatre basic diagram
5.1 home theatre diagram
zigbee document 053474r06 version 1.0
5.1 home theatre assembling
4.1 home theater ic
ZigBee Specification, Document 053474r06
home theater 5.1 circuit diagram
bd 317 schema
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. MCF5206EUM/D, rev.1 MCF5206e ColdFire Integrated Microprocessor User’s Manual Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
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MCF5206EUM/D,
MCF5206e
M68000
MCF5206e
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Untitled
Abstract: No abstract text available
Text: K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC XDRTM DRAM TM 512Mbit XDR DRAM C-die Revision 1.0 December 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4Y50164UC
K4Y50084UC
K4Y50044UC
K4Y50024UC
512Mbit
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f9234
Abstract: MAX 77693 nec Microcontroller 78F9232 CMP-01 F9232 UPD78F9234MC rs232-C pin out FXP MARKING uPD78F9234 MARKING H1135
Text: User’s Manual 78K0S/KB1+ 8-Bit Single-Chip Microcontrollers µPD78F9232 µPD78F9234 Document No. U17446EJ2V0UD00 2nd edition Date Published March 2006 NS CP(K) Printed in Japan 2005 [MEMO] 2 User’s Manual U17446EJ2V0UD NOTES FOR CMOS DEVICES 1 VOLTAGE APPLICATION WAVEFORM AT INPUT PIN
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78K0S/KB1+
PD78F9232
PD78F9234
U17446EJ2V0UD00
U17446EJ2V0UD
f9234
MAX 77693
nec Microcontroller 78F9232
CMP-01
F9232
UPD78F9234MC
rs232-C pin out
FXP MARKING
uPD78F9234 MARKING
H1135
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46LR16640A
Abstract: Mobile DDR SDRAM
Text: IS43/46LR16640A Advanced Information 16M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16640A is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 16,777,216 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted
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IS43/46LR16640A
16Bits
IS43/46LR16640A
16-bit
IS43LR16640A-5BL
IS43LR16640A-6BL
60-ball
-40oC
64Mx16
46LR16640A
Mobile DDR SDRAM
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46LR32640A
Abstract: Mobile DDR SDRAM IS43LR32640A-5BLI IS46LR32640A-5BLA1 64Mx32 Mobile DDR SDRAM IS43LR32640A
Text: IS43/46LR32640A Advanced Information 16M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32640A is 2,147,483,648 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 33,554,432 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted
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IS43/46LR32640A
32Bits
IS43/46LR32640A
32-bit
IS43LR32640A-5BL
IS43LR32640A-6BL
90-ball
-40oC
64Mx32
46LR32640A
Mobile DDR SDRAM
IS43LR32640A-5BLI
IS46LR32640A-5BLA1
64Mx32 Mobile DDR SDRAM
IS43LR32640A
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46LR16320C
Abstract: Mobile DDR SDRAM
Text: IS43/46LR16320C Preliminary Information 8M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16320C is 536,870,912 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 8,388,608 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted
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IS43/46LR16320C
16Bits
IS43/46LR16320C
16-bit
-40oC
32Mx16
IS43LR16320C-5BLI
IS43LR16320C-6BLI
60-ball
46LR16320C
Mobile DDR SDRAM
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pt45
Abstract: No abstract text available
Text: LatticeSC Family Data Sheet DS1004 Version 01.2, June 2006 LatticeSC Family Data Sheet Introduction June 2006 Preliminary Data Sheet DS1004 Features • High Performance FPGA Fabric • 15K to 115K four input Look-up Tables LUT4s • 132 to 942 I/Os • 700MHz global clock; 1GHz edge clocks
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DS1004
DS1004
700MHz
600Mbps
125Gbps)
110mW
VCC12.
LFSC25
900-Ball
pt45
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2114 static ram
Abstract: sram 2114 2114 ram RAM 2114 psg010 2114 1k x 4 SRAM 2114 SRAM 4 bit dac OSC CMOS 32.768K 2063 static ram
Text: ST ST2108 8 BIT Microcontroller with 1M bytes ROM Notice: Sitronix Technology Corp. reserves the right to change the contents in this document without prior notice. This is not a final specification. Some parameters are subject to change. 1. FEATURES Totally static RISC CPU
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ST2108
128-level
timer/16-bit
2114 static ram
sram 2114
2114 ram
RAM 2114
psg010
2114 1k x 4 SRAM
2114 SRAM
4 bit dac
OSC CMOS 32.768K
2063 static ram
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EN29GL128
Abstract: cFeon EN29GL128H EN29GL128H
Text: EN29GL128H/L EN29GL128 128 Megabit 16384K x 8-bit / 8192K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Write operation status bits indicate program and erase operation completion • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and
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EN29GL128H/L
EN29GL128
16384K
8192K
16-bit)
8-word/16-byte
page26.
64-ball
EN29GL128
cFeon EN29GL128H
EN29GL128H
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446H
Abstract: 451H RDN11 GR-253-CORE GR-499-CORE IDT82P2821 640-Pin
Text: 21 +1 Channel High-Density T1/E1/J1 Line Interface Unit IDT82P2821 Version 3 February 6, 2009 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: 1-800-345-7015 or 408-284-8200• TWX: 910-338-2070 • FAX: 408-284-2775 Printed in U.S.A.
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IDT82P2821
640-pin
BH640)
BHG640)
82P2821
446H
451H
RDN11
GR-253-CORE
GR-499-CORE
IDT82P2821
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Untitled
Abstract: No abstract text available
Text: C Y 7 C 6 7 0 1 3 JäT tÊttttttmmmffffffffff jtttttf m C Y 7 C 6 7 1 1 3 - CY7C67013 CY7C67113 USB Mini-Host Controller 12 Mbps Cypress Sem iconductor Corporation • 3901 North First Street • San José • CA 95134 • 408-943-2600 November 13, 1998
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CY7C67013
CY7C67113
CY7C67013
CY7C67113
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DIP24S
Abstract: LC72140 LC72140M MFP24S 4464-12
Text: Ordering number: EN4464A _ CM OS LSI LC72140, LC72140M SAVYO i PLL Frequency Synthesizers Package Dimensions Overview The LC72140 and LC72140M are high-performance, phase-locked loop P L L frequency synthesizers that operate over the VHF, M W and LW wave bands. They
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EN4464A
LC72140,
LC72140M
LC72140
LC72140M
24-pin
LC72140M,
DIP24S
MFP24S
4464-12
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